IRF7749L1 [INFINEON]
60V 单个 N 通道 HEXFET Power MOSFET, 采用 DirectFET L8 封装，额定电流为33 A。;
| 型号： | IRF7749L1 |
| 厂家： | 
Infineon |
| 描述： | 60V 单个 N 通道 HEXFET Power MOSFET, 采用 DirectFET L8 封装，额定电流为33 A。 |
| 文件： | 总18页 (文件大小：1111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRF7749L1TRPbF
DirectFET™ N-Channel Power MOSFET
IR MOSFET-DirectFET™
VDSS
60V
IRF7749L1TRPbF
RDS(on) typ.
@ VGS = 10V
RDS(on) max
@ VGS = 10V
1.1m
Quality Requirement Category: Industrial
1.5m
ID (Silicon Limited)
345A
375A
ID (Package Limited)
Applications
RoHS Compliant, Halogen Free
Lead-Free (Qualified up to 260°C Reflow)
Ideal for High Performance Isolated Converter Primary
Switch Socket
S
S
S
S
S
S
D
D
Optimized for Synchronous Rectification
Low Conduction Losses
High Cdv/dt Immunity
Low Profile (<0.7mm)
Dual Sided Cooling Compatible
Compatible with existing Surface Mount Techniques
S
G
S
L8
G
D
S
Gate
Drain
Source
Standard Pack
Base part number
Package Type
DirectFET™ Large Can (LA) Tape and Reel
Orderable Part Number
IRF7749L1TRPbF
Form
Quantity
IRF7749L1TRPbF
4000
8.0
6.0
4.0
2.0
0.0
8
6
4
2
0
T
= 25°C
J
I
= 120A
D
Vgs = 5.5V
Vgs = 6.0V
Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
Vgs = 12V
T = 125°C
J
T = 25°C
J
4
6
8
10 12 14 16 18 20
0
40
80
120
160
200
V
Gate-to-Source Voltage (V)
I , Drain Current (A)
GS,
D
Figure 1 Typical On-Resistance vs. Gate Voltage
Figure 2 Typical On-Resistance vs. Drain Current
Final Datasheet
www.infineon.com
Please read the important Notice and Warnings at the end of this document
V2.2
2019-02-20
IR MOSFET-DirectFET™
IRF7749L1TRPbF
Table of Contents
Table of Contents
Applications
…..………………………………………………………………………...……………..……………1
Ordering Table ….……………………………………………………………………………………………………1
Table of Contents ….………………………………………………………………………………………………...2
1
2
3
4
Parameters ………………………………………………………………………………………………3
Maximum ratings, Thermal, and Avalanche characteristics ………………………………………4
Electrical characteristics ………………………………………………………………………………5
Electrical characteristic diagrams ……………………………………………………………………6
Package Information ………………………………………………………………………………………………14
Qualification Information ……………………………………………………………………………………………16
Revision History …………………………………………………………………………………………..…………17
Final Datasheet
V2.2
2
2019-02-20
IR MOSFET-DirectFET™
IRF7749L1TRPbF
Parameters
1
Parameters
Table1
Key performance parameters
Parameter
Values
Units
VDS
60
V
R
DS(on) max
1.5
m
A
ID @ TC
ID @ TA
345
36
A
Final Datasheet
V2.2
3
2019-02-20
IR MOSFET-DirectFET™
IRF7749L1TRPbF
Maximum ratings and thermal characteristics
2
Maximum ratings and thermal characteristics
Table 2
Maximum ratings (at TJ=25°C, unless otherwise specified)
Parameter
Symbol
Conditions
Values
Unit
ID
ID
ID
TC = 25°C, VGS @ 10V
TC = 100°C, VGS @ 10V
TA= 25°C, VGS @ 10V
TC = 25°C, VGS @ 10V
TC = 25°C
Continuous Drain Current (Silicon Limited)
Continuous Drain Current (Silicon Limited)
Continuous Drain Current (Silicon Limited)
Continuous Drain Current (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
345
243
36
375
1380
341
A
ID
IDM
PD
PD
-
TC = 25°C
TA = 25°C
W
3.8
0.025
-
W/°C
Gate-to-Source Voltage
VGS
-
± 20
V
Operating Junction
TJ
-
-
-55 to + 175
°C
Storage Temperature Range
TSTG
Table 3
Thermal characteristics
Parameter
Symbol
Conditions
Min.
Typ.
Max.
40
Unit
-
-
-
-
-
-
-
-
-
-
-
12.5
20
-
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
R
JA
-
-
R
JA
°C/W
R
JA
0.44
0.5
R
JC
-
R
JA-PCB
Table 4
Avalanche characteristics
Parameter
Symbol
Values
Unit
EAS
EAS
IAR
315
714
Single Pulse Avalanche Energy (Thermally Limited
Single Pulse Avalanche Energy (Tested)
Avalanche Current
mJ
A
mJ
See Fig.15,16, 19a, 19b
EAR
Repetitive Avalanche Energy
Notes:
Package limit current based on source connection technology
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.044mH, RG = 50, IAS = 120A, VGS =10V.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS
R is measured at TJ approximately 90°C.
Silicon limit current based on maximum allowable junction temperature TJmax.
.
Final Datasheet
V2.2
2019-02-20
4
IR MOSFET-DirectFET™
IRF7749L1TRPbF
Electrical characteristics
3
Electrical characteristics
Static characteristics
Table 5
Values
Min. Typ. Max.
Parameter
Symbol
Conditions
Unit
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 3.0mA
VGS = 10V, ID = 120A
60
-
-
2.0
-
-
56
1.1
-
-
-
1.5
4.0
-
V
mV/°C
m
VGS(th)
V
VDS = VGS, ID = 250µA
8.8
mV/°C
Gate Threshold Voltage Coefficient
VGS(th)/TJ
V
DS = 60V, VGS = 0V
-
-
-
-
-
1.5
20
Drain-to-Source Leakage Current
IDSS
µA
VDS = 60V, VGS = 0V, TJ = 125°C
-
-
-
-
250
100
100
-
IGSS
IGSS
RG
VGS = 20V
VGS = -20V
-
Gate-to-Source Forward Leakage
Gate Resistance
nA
Table 6
Dynamic characteristics
Values
Min. Typ. Max.
Parameter
Symbol
Conditions
Unit
Forward Trans conductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller) Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
V
DS = 10V, ID = 120A
185
-
-
-
-
275
-
S
183
39
19
46
79
65
119
29
149
72
ID = 120A
VDS = 30V
GS = 10V
nC
V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
VDS = 48V, VGS = 0V
VDD = 30V
nC
ns
ID = 120A
RG = 1.8
VGS = 10V
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
88
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
10655
1627
680
pF
Effective Output Capacitance
Coss eff.
-
1959
-
VGS = 0V, VDS = 0V to 48V
Table 7
Reverse Diode
Values
Min. Typ. Max.
Parameter
Symbol
Conditions
Unit
D
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
MOSFET symbol
showing the
integral reverse
p-n junction diode.
IS
-
-
345
1380
1.3
G
A
V
ISM
-
-
-
-
S
Diode Forward Voltage
VSD
TJ = 25°C, IS = 120A,VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
TJ = 25°C ,IF = 120A,
VDD = 30V, di/dt = 100A/µs
-
-
42
54
-
-
ns
nC
Final Datasheet
V2.2
2019-02-20
5
IR MOSFET-DirectFET™
IRF7749L1TRPbF
Electrical characteristic diagrams
4
Electrical characteristic diagrams
10000
1000
100
10000
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
BOTTOM
BOTTOM
4.5V
4.5V
60µs PULSE WIDTH
Tj = 175°C
60µs PULSE WIDTH
Tj = 25°C
10
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Figure 4 Typical Output Characteristics
Figure 3 Typical Output Characteristics
2.0
10000
V
= 25V
I
= 120A
= 10V
DS
60µs PULSE WIDTH
D
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
GS
1000
100
10
T = 25°C
J
T = 175°C
J
1
0.1
2.0
3.0
4.0
5.0
6.0
7.0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
V
, Gate-to-Source Voltage (V)
T , Junction Temperature (°C)
GS
J
Figure 5 Typical Transfer Characteristics
Figure 6 Normalized On-Resistance vs. Temperature
Final Datasheet
V2.2
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2019-02-20
IR MOSFET-DirectFET™
IRF7749L1TRPbF
Electrical characteristic diagrams
16
12
8
100000
V
= 0V,
= C
f = 1 MHZ
GS
C
C
C
+ C , C
SHORTED
I = 120A
D
iss
gs
gd
ds
= C
rss
oss
gd
= C + C
V
V
= 48V
= 30V
ds
gd
DS
DS
C
iss
10000
1000
100
C
VDS= 12V
oss
C
rss
4
0
0
40
Q
80
120
160
200
240
0.1
1
10
100
Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
DS
G
Figure 8 Typical Gate Charge vs. Gate-to-Source
Voltage
Figure 7 Typical Capacitance vs. Drain-to-Source
Voltage
10000
1000
1000
100µsec
T = 175°C
J
100
100
OPERATION IN THIS AREA
1msec
LIMITED BY R (on)
DS
T = 25°C
J
10
10
1
10msec
1
Tc = 25°C
Tj = 175°C
DC
V
= 0V
GS
Single Pulse
0.1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1
10
V
, Source-to-Drain Voltage (V)
SD
V
, Drain-toSource Voltage (V)
DS
Figure 10 Maximum Safe Operating Area
Figure 9 Typical Source-Drain Diode Forward
Voltage
Final Datasheet
V2.2
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2019-02-20
IR MOSFET-DirectFET™
IRF7749L1TRPbF
Electrical characteristic diagrams
4.5
4.0
3.5
3.0
2.5
2.0
1.5
350
300
250
200
150
100
50
I
= 250µA
= 1.0mA
= 1.0A
D
I
D
I
D
0
-75 -50 -25
0
25 50 75 100 125 150 175
25
50
75
100
125
150
175
T , Temperature ( °C )
T
, CaseTemperature (°C)
J
C
Figure 11 Maximum Drain Current vs. Case
Temperature
Figure 12 Typical Threshold Voltage vs. Junction
Temperature
1400
1200
1000
800
I
D
TOP
15A
35A
120A
BOTTOM
600
400
200
0
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
Figure 13 Maximum Avalanche Energy vs. Temperature
Final Datasheet
V2.2
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2019-02-20
IR MOSFET-DirectFET™
IRF7749L1TRPbF
Electrical characteristic diagrams
1
D = 0.50
0.1
0.01
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Figure 14 Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
100
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C. (Single Pulse)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Figure 15 Typical Avalanche Current vs. Pulse Width
Final Datasheet
V2.2
2019-02-20
9
IR MOSFET-DirectFET™
IRF7749L1TRPbF
Electrical characteristic diagrams
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.infineon.com)
1.Avalanche failures assumption:
350
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for every
part type.
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
300
250
200
150
100
50
2. Safe operation in Avalanche is allowed as long asTjmax is not
exceeded.
I
= 120A
D
3. Equation below based on circuit and waveforms shown in
Figures 19a, 19b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. Iav = Allowable avalanche current.
7. DT = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 14)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
0
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
Figure 16 Maximum Avalanche Energy vs.
Temperature
Notes:
TC measured with thermocouple mounted to top (Drain) of part.
Used double sided cooling , mounting pad with large heatsink
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Surface mounted on 1 in. square Cu
board (still air).
Mounted to a PCB with small clip
heatsink (still air).
Mounted on minimum footprint full size board
with metalized back and with small clip
heatsink (still air)
Final Datasheet
V2.2
2019-02-20
10
IR MOSFET-DirectFET™
IRF7749L1TRPbF
Electrical characteristic diagrams
Figure 17 Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET™ Power MOSFETs
Figure 18b Gate Charge Waveform
Figure 18a Gate Charge Test Circuit
Final Datasheet
V2.2
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IR MOSFET-DirectFET™
IRF7749L1TRPbF
Electrical characteristic diagrams
Figure 19b Unclamped Inductive Waveforms
Figure 19a Unclamped Inductive Test Circuit
Figure 20b Switching Time Waveforms
Figure 20a Switching Time Test Circuit
Final Datasheet
V2.2
2019-02-20
12
IR MOSFET-DirectFET™
IRF7749L1TRPbF
Package Information
5
Package Information
DirectFET™ Board Footprint, L8 Outline
(Large Size Can, 8-Source Pads)
Please see DirectFET™ application note AN-1035 for all details regarding the assembly of DirectFET™.
This includes all recommendations for stencil and substrate designs.
G = GATE
D = DRAIN
S = SOURCE
D
D
D
D
D
D
S
S
S
S
S
S
S
S
G
Final Datasheet
V2.2
2019-02-20
13
IR MOSFET-DirectFET™
IRF7749L1TRPbF
Package Information
DirectFET™ Outline Dimension, L8 Outline
(Large Size Can, 8-Source Pads)
Please see DirectFET™ application note AN-1035 for all details regarding the assembly of DirectFET™.
This includes all recommendations for stencil and substrate designs.
DIMENSIONS
METRIC
IMPERIAL
CODE MIN MAX
MIN
MAX
0.360
0.280
0.236
0.026
0.024
0.048
0.040
0.030
0.017
0.057
0.104
0.215
0.029
0.007
0.003
A
B
C
D
E
F
9.05 9.15
6.85 7.10
5.90 6.00
0.55 0.65
0.58 0.62
1.18 1.22
0.98 1.02
0.73 0.77
0.38 0.42
1.35 1.45
2.55 2.65
5.35 5.45
0.68 0.74
0.09 0.17
0.02 0.08
0.356
0.270
0.232
0.022
0.023
0.046
0.039
0.029
0.015
0.053
0.100
0.211
0.027
0.003
0.001
G
H
J
K
L
L1
M
P
R
DirectFETTM Part Marking
GATE MARKING
LOGO
+
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
Final Datasheet
V2.2
2019-02-20
14
IR MOSFET-DirectFET™
IRF7749L1TRPbF
Tape & Reel Information
DirectFETTM Tape & Reel Dimension (Showing component orientation).
NOTE:
Controlling dimensions in mm
Std reel quantity is 4000 parts. (ordered as IRF7749L1TRPBF).
REEL DIMENSIONS
STANDARD OPTION (QTY 4000)
METRIC
IMPERIAL
CODE
MIN
MAX
N.C
MIN
MAX
N.C
A
B
C
D
E
F
12.992
0.795
0.504
0.059
3.900
N.C
330.00
20.20
12.80
1.50
N.C
N.C
13.20
N.C
0.520
N.C
99.00
N.C
3.940
0.880
0.720
0.760
100.00
22.40
18.40
19.40
G
H
0.650
0.630
16.40
15.90
LOADED TAPE FEED DIRECTION
+
DIMENSIONS
METRIC
IMPERIAL
NOTE: CONTROLLING
DIMENSIONS IN MM
CODE
MIN
MIN
11.90
3.90
15.90
7.40
7.20
9.90
1.50
1.50
MAX
12.10
4.10
MAX
0.476
0.161
0.642
0.299
0.291
0.398
N.C
A
B
C
D
E
F
4.69
0.154
0.623
0.291
0.283
0.390
0.059
0.059
16.30
7.60
7.40
10.10
N.C
G
H
0.063
1.60
Final Datasheet
V2.2
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2019-02-20
IR MOSFET-DirectFET™
IRF7749L1TRPbF
Qualification Information
6
Qualification Information
Qualification Information
Qualification Level
Industrial
(per JEDEC JESD47F) †
MSL1
(per JEDEC J-STD-020D)†
Moisture Sensitivity Level
RoHS Compliant
DirectFET™ Large Can
Yes
†
Applicable version of JEDEC standard at the time of product release.
Final Datasheet
V2.2
16
2019-02-20
IR MOSFET-DirectFET™
IRF7749L1TRPbF
Revision History
Revision History
Major changes since the last revision
Revision
Page or Reference
All pages
Date
Description of changes
2.0
2.1
2.2
2013-01-07
2013-02-13
2019-02-20
First release Final data sheet.
TR1 option removed and Tape & Reel Info updated accordingly.
Hyperlinks added throw-out the document
All pages
All pages
Update to R-Theta.
Final Datasheet
V2.2
17
2019-02-20
IR MOSFET-DirectFET™
IRF7749L1TRPbF
Trademarks of Infineon Technologies AG
µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™,
DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™,
HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OPTIGA™,
OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID FLASH™,
SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™
Trademarks updated November 2015
Other Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
IMPORTANT NOTICE
For further information on the product, technology,
Edition 2015-05-06
Published by
Infineon Technologies AG
81726 Munich, Germany
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement of
intellectual property rights of any third party.
WARNINGS
© 2016 Infineon Technologies AG.
All Rights Reserved.
Due to technical requirements products may contain
dangerous substances. For information on the types
in question please contact your nearest Infineon
Technologies office.
Do you have a question about this
document?
Email: erratum@infineon.com
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In addition, any information given in this document
is subject to customer’s compliance with its
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applicable legal requirements, norms and standards
concerning customer’s products and any use of the
product of Infineon Technologies in customer’s
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Document reference
authorized representatives of Infineon Technologies,
Infineon Technologies’ products may not be used in
any applications where a failure of the product or
any consequences of the use thereof can reasonably
be expected to result in personal injury.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
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