IRF7750 [INFINEON]
Power MOSFET(Vdss=-20V, Rds(on)=0.030ohm); 功率MOSFET （ VDSS = -20V ， RDS（ON） = 0.030ohm ）
| 型号： | IRF7750 |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=-20V, Rds(on)=0.030ohm) |
| 文件： | 总7页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 93848A
IRF7750
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l Dual P-Channel MOSFET
l Very Small SOIC Package
l Low Profile ( < 1.1mm)
l Available in Tape & Reel
VDSS = -20V
RDS(on) = 0.030Ω
TSSOP-8
Description
HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely
lowon-resistancepersiliconarea.Thisbenefit,combinedwiththeruggedizeddevicedesign,thatInternationalRectifier
is well known for, provides the designer with an extremely efficient and reliable device for battery and load
management.
The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device
for applications where printed circuit board space is at a premium. The low profile (<1.1mm) allows it to fit easily into
extremely thin environments such as portable electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter
Drain- Source Voltage
Max.
-20
Units
V
VDS
ID @ TC = 25°C
ID @ TC = 70°C
IDM
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
±4.7
±3.8
A
±38
PD @TC = 25°C
PD @TC = 70°C
Power Dissipation
1.0
W
Power Dissipation
0.64
Linear Derating Factor
0.008
± 12
W/°C
V
VGS
Gate-to-Source Voltage
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Max.
125
Units
°C/W
RθJA
www.irf.com
1
5/25/2000
IRF7750
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-20 ––– –––
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.012 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 0.030
––– ––– 0.055
-0.45 ––– -1.2
11 ––– –––
––– ––– -1.0
––– ––– -25
––– ––– -100
––– ––– 100
VGS = -4.5V, ID = -4.7A
VGS = -2.5V, ID = -3.8A
VDS = VGS, ID = -250µA
VDS = -10V, ID = -4.7A
VDS = -20V, VGS = 0V
VDS = -16V, VGS = 0V, TJ = 70°C
VGS = -12V
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 12V
Qg
––– 26
––– 3.9 5.8
––– 8.0 12
39
ID = -4.7A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = -16V
VGS = -5.0V
VDD = -10V
––– 15 –––
––– 54 –––
––– 180 –––
––– 210 –––
––– 1700 –––
––– 380 –––
––– 270 –––
ID = -1.0A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RD = 10Ω
RG = 24Ω
Ciss
Coss
Crss
Input Capacitance
VGS = 0V
Output Capacitance
pF
VDS = -15V
ƒ = 1.0MHz
Reverse Transfer Capacitance
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
D
IS
MOSFET symbol
showing the
––– -1.0
–––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
––– ––– -38
––– ––– -1.2
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
V
TJ = 25°C, IS = -1.0A, VGS = 0V
––– 26
––– 16
39
24
ns
TJ = 25°C, IF = -1.0A
Qrr
nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
When mounted on 1 inch square copper board, t<10 sec
max. junction temperature.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
www.irf.com
IRF7750
1000
100
10
1000
100
10
VGS
VGS
TOP
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
TOP
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
BOTTOM -1.50V
BOTTOM -1.50V
-1.50V
-1.50V
1
1
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T = 25 C
J
°
T = 150 C
J
0.1
0.1
0.1
0.1
1
10
100
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
100
°
T = 25 C
J
10
°
T = 150 C
J
°
T = 150 C
J
10
1
°
T = 25 C
J
V
= -15V
DS
20µs PULSE WIDTH
V
= 0 V
GS
1
1.5
0.1
0.2
2.0
2.5
3.0
0.4
0.6
0.8
1.0
1.2
-V , Gate-to-Source Voltage (V)
GS
-V ,Source-to-Drain Voltage (V)
SD
Fig 4. Typical Source-Drain Diode
Fig 3. Typical Transfer Characteristics
Forward Voltage
www.irf.com
3
IRF7750
2500
10
8
V
GS
= 0V,
f = 1MHz
C
I
D
=
-4.7A
C
= C + C
SHORTED
ds
iss
gs
gd ,
gd
V
=-16V
DS
C
= C
gd
rss
C
= C + C
2000
1500
1000
500
0
oss ds
C
iss
6
4
2
C
oss
rss
C
0
0
10
20
30
40
1
10
100
Q , Total Gate Charge (nC)
-V , Drain-to-Source Voltage (V)
DS
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1.00
0.80
0.60
0.40
0.20
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
10
1
10us
100us
1ms
I
= -250µA
D
10ms
°
= 25 C
°
= 150 C
Single Pulse
T
A
T
J
0.1
0.1
1
10
100
-75 -50 -25
0
25
50
75 100 125 150
-V , Drain-to-Source Voltage (V)
DS
T
, Temperature ( °C )
J
Fig 8. Maximum Safe Operating Area
Fig 7. Threshold Voltage Vs. Temperature
4
www.irf.com
IRF7750
5.0
4.0
3.0
2.0
1.0
0.0
20
16
12
8
4
0
25
50
75
100
125
150
0.01
0.10
1.00
10.00
100.00
°
T , Case Temperature ( C)
C
Time (sec)
Fig 10. Typical Power Vs. Time
Fig 9. Maximum Drain Current Vs.
Case Temperature
1000
100
10
1
D = 0.50
0.20
0.10
0.05
P
DM
0.02
0.01
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
1
2
2. Peak T =P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
IRF7750
2.0
0.08
0.06
0.04
0.02
0.00
-4.7A
=
I
D
1.5
1.0
0.5
0.0
V
= -2.5V
GS
V
= -4.5V
30
GS
V
= -4.5V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
0
10
20
40
T , Junction Temperature ( C)
J
-I , Drain Current (A)
D
Fig 12. Normalized On-Resistance
Fig 13. Typical On-Resistance Vs. Drain
Vs. Temperature
Current
0.08
0.06
0.04
0.02
I
= -4.7A
D
0.00
2.0
2.5
3.0
3.5
-V
Gate -to -Source Voltage (V)
GS,
Fig 14. Typical On-Resistance Vs. Gate
Voltage
6
www.irf.com
IRF7750
TSSOP-8 Package Outline
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
Data and specifications subject to change without notice. 5/2000
www.irf.com
7
相关型号：
IRF7751PBF
Small Signal Field-Effect Transistor, 4.5A I(D), 30V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-153AA, LEAD FREE, TSSOP-8
INFINEON
©2020 ICPDF网 联系我们和版权申明