IRF7751GPBF [INFINEON]
HEXFET® Power MOSFET Ultra Low On-Resistance; HEXFET功率MOSFET超低导通电阻
| 型号： | IRF7751GPBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET® Power MOSFET Ultra Low On-Resistance |
| 文件： | 总8页 (文件大小：237K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96145A
IRF7751GPbF
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l Dual P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.2mm)
l Available in Tape & Reel
l Lead-Free
VDSS
-30V
RDS(on) max
35mΩ@VGS = -10V
55mΩ@VGS = -4.5V
ID
-4.5A
-3.8A
l Halogen-Free
Description
HEXFET® power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for, provides the de-
signer with an extremely efficient and reliable device
for use in battery and load management.
TSSOP-8
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Max.
-30
Units
V
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
-4.5
-3.6
A
-18
PD @TA = 25°C
PD @TA = 70°C
Power Dissipation
Power Dissipation
1.0
W
0.64
Linear Derating Factor
0.008
±20
W/°C
V
VGS
Gate-to-Source Voltage
TJ, TSTG
Junction and Storage Temperature Range
-55 to +150
°C
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Max.
125
Units
°C/W
RθJA
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1
05/14/09
IRF7751GPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-30 ––– –––
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.020 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 35
––– 55
-1.0 ––– -2.5
6.8 ––– –––
––– ––– -15
––– ––– -25
––– ––– -100
––– ––– 100
VGS = -10V, ID = -4.5A
VGS = -4.5V, ID = -3.8A
VDS = VGS, ID = -250µA
VDS = -10V, ID = -4.5A
RDS(on)
Static Drain-to-Source On-Resistance
mΩ
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
VDS = -24V, VGS = 0V
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
VDS = -24V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = -20V
VGS = 20V
ID = -4.5A
Qg
––– 29
44
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
––– 5.5 –––
––– 5.0 –––
nC VDS = -15V
VGS = -10V
––– 13
––– 16
20
24
VDD = -15V
ID = -1.0A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
––– 155 233
––– 80 120
––– 1464 –––
––– 227 –––
––– 146 –––
RG = 6.0Ω
VGS = -10V
Ciss
Coss
Crss
Input Capacitance
VGS = 0V
Output Capacitance
pF
VDS = -25V
ƒ = 1.0MHz
Reverse Transfer Capacitance
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
S
IS
-1.0
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
-18
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
––– ––– -1.2
V
TJ = 25°C, IS = -1.0A, VGS = 0V
––– 23
––– 19
35
28
ns
TJ = 25°C, IF = -1.0A
Qrr
nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
When mounted on 1 inch square copper board, t < 10 sec.
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRF7751GPbF
100
10
100
10
1
VGS
VGS
TOP
-10.0V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
-3.0V
TOP
-10.0V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
-3.0V
BOTTOM -2.7V
BOTTOM -2.7V
1
-2.7V
-2.7V
0.1
0.01
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
0.1
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
1.5
1.0
0.5
0.0
-4.5A
=
I
D
°
T = 150 C
10
J
°
T = 25 C
J
1
V
= -15V
DS
V
GS
=-10V
20µs PULSE WIDTH
0.1
2.0
3.0
4.0
5.0 6.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
-V , Gate-to-Source Voltage (V)
GS
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
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3
IRF7751GPbF
4000
14
12
10
8
V
= 0V,
f = 1MHz
gd , ds
I
D
= -4.5A
GS
C
= C + C
gs
C
SHORTED
iss
V
V
=-24V
=-15V
C
= C
gd
= C + C
ds
DS
DS
rss
C
3200
2400
1600
800
0
oss
gd
C
iss
6
4
C
oss
2
C
rss
0
1
10
100
0
10
20
30
40
-V , Drain-to-Source Voltage (V)
DS
Q , Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
100us
1ms
°
T = 150 C
J
10
1
°
T = 25 C
J
10ms
°
T = 25 C
J
C
°
T = 150 C
Single Pulse
V
= 0 V
GS
1.4
0.1
0.2
0.1
0.4
0.6
0.8
1.0
1.2
1.6
0.1
1
10
100
-V ,Source-to-Drain Voltage (V)
SD
-V , Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRF7751GPbF
5.0
4.0
3.0
2.0
1.0
0.0
RD
VDS
VGS
D.U.T.
RG
-
+
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
25
50
75
100
125
150
°
T , Case Temperature( C)
C
90%
Fig 9. Maximum Drain Current Vs.
V
DS
Case Temperature
Fig 10b. Switching Time Waveforms
1000
100
10
D = 0.50
0.20
0.10
0.05
P
2
DM
0.02
0.01
t
1
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7751GPbF
0.100
0.080
0.060
0.200
0.150
0.100
0.050
0.000
VGS = -4.5V
I
= -4.5A
D
0.040
0.020
VGS = -10V
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0
10
20
30
40
-V
GS,
Gate -to -Source Voltage (V)
-I , Drain Current ( A )
D
Fig 12. Typical On-Resistance Vs.
Fig 13. Typical On-Resistance Vs.
Gate Voltage
Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
-
V
+
DS
10 V
D.U.T.
Q
Q
GD
GS
V
GS
-3mA
V
G
I
I
D
G
Current Sampling Resistors
Charge
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
6
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IRF7751GPbF
TSSOP8 Package Outline
Dimensions are shown in milimeters (inches)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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7
IRF7751GPbF
TSSOP8 Part Marking Information
TSSOP-8 Tape and Reel Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 05/2009
8
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