IRF7769L2TR1PBF [INFINEON]
Power Field-Effect Transistor, 20A I(D), 100V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-9;型号: | IRF7769L2TR1PBF |
厂家: | Infineon |
描述: | Power Field-Effect Transistor, 20A I(D), 100V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-9 开关 脉冲 晶体管 |
文件: | 总11页 (文件大小:275K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IRF7769L2PbF
DirectFET Power MOSFET
Typical values (unless otherwise specified)
l RoHS Compliant, Halogen Free
l Lead-Free (Qualified up to 260°C Reflow)
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Optimized for Synchronous Rectification
l Low Conduction Losses
VDSS
VGS
RDS(on)
2.8mΩ@ 10V
Vgs(th)
100V min ±20V max
Qg tot
Qgd
200nC
110nC
2.7V
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount Techniques
l Industrial Qualified
S
S
S
S
S
S
S
S
G
D
D
DirectFET ISOMETRIC
L8
Applicable DirectFET Outline and Substrate Outline
SB
SC
M2
M4
L4
L6
L8
Description
The IRF7769L2TR/TR1PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to
achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems.
The IRF7769L2TR/TR1PbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the
device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability
improvements, and makes this device ideal for high performance power converters.
Standard Pack
Form
Tape and Reel
Tape and Reel
Orderable part number
Package Type
Note
Quantity
4000
1000
IRF7769L2TRPbF
IRF7769L2TR1PbF
DirectFET2 Large Can
DirectFET2 Large Can
"TR" suffix
"TR1" suffix EOL notice # 264
Absolute Maximum Ratings
Parameter
Max.
100
±20
124
88
Units
V
VDS
VGS
Drain-to-Source Voltage
Gate-to-Source Voltage
I
D @ TC = 25°C
ID @ TC = 100°C
D @ TA = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
A
20
I
375
500
260
74
ID @ TC = 25°C
IDM
EAS
IAR
Single Pulse Avalanche Energy
mJ
A
Avalanche Current
12.00
10.00
8.00
6.00
4.00
2.00
0.00
3.10
3.00
2.90
2.80
I
= 74A
T = 25°C
D
A
V
V
= 7.0V
GS
V
= 8.0V
= 10V
GS
T
= 125°C
= 25°C
J
GS
V
= 15V
GS
T
J
2.0
4.0 6.0
8.0 10.0 12.0 14.0 16.0
20
40
60
80
100
V
, Gate-to-Source Voltage (V)
GS
Fig 1. Typical On-Resistance vs. Gate Voltage
I , Drain Current (A)
D
Fig 2. Typical On-Resistance vs. Drain Current
Notes:
TC measured with thermocouple mounted to top (Drain) of part.
ꢀ Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.09mH, RG = 25Ω, IAS = 74A.
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
1
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IRF7769L2PbF
Static @ TJ = 25°C (unless otherwise specified)
Conditions
VGS = 0V, ID = 250μA
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
100
–––
–––
2.0
–––
0.02
2.8
2.7
-10
–––
–––
–––
–––
–––
200
30
–––
–––
3.5
4.0
V
V/°C
mΩ
V
Reference to 25°C, ID = 2mA
VGS = 10V, ID = 74A
V
/ T
J
ΔΒ DSS Δ
RDS(on)
VDS = VGS, ID = 250μA
VGS(th)
ΔVGS(th)/ΔTJ
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
410
–––
–––
–––
–––
–––
–––
–––
–––
––– mV/°C
VDS = 100V, VGS = 0V
20
250
100
-100
–––
300
–––
–––
165
–––
–––
–––
–––
–––
–––
–––
–––
μA
nA
S
VDS = 80V, VGS = 0V, TJ = 125°C
V
GS = 20V
VGS = -20V
DS = 25V, ID = 74A
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
V
gfs
Qg
VDS = 50V
GS = 10V
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
V
9.0
110
51
nC
ID = 74A
See Fig. 9
119
53
VDS = 16V, VGS = 0V
nC
Gate Resistance
1.5
44
Ω
VDD = 50V, VGS = 10V
ID = 74A
td(on)
tr
td(off)
tf
Turn-On Delay Time
–––
–––
–––
–––
Rise Time
32
RG=1.8Ω
Turn-Off Delay Time
92
ns
Fall Time
41
VGS = 0V
Ciss
Coss
Crss
Coss
Coss
Input Capacitance
––– 11560 –––
––– 1240 –––
VDS = 25V
ƒ = 1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Output Capacitance
–––
––– 6665 –––
––– 690 –––
590
–––
VGS = 0V, VDS = 1.0V, f=1.0MHz
VGS = 0V, VDS = 80V, f=1.0MHz
Output Capacitance
Diode Characteristics
Conditions
MOSFET symbol
Parameter
Continuous Source Current
Min. Typ. Max. Units
IS
–––
–––
124
showing the
(Body Diode)
A
ISM
integral reverse
Pulsed Source Current
(Body Diode)
–––
–––
500
p-n junction diode.
TJ = 25°C, IS = 74A, VGS = 0V
TJ = 25°C, IF = 74A, VDD = 50V
di/dt = 100A/μs
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
75
1.3
112
330
V
ns
nC
Qrr
220
Notes:
ꢀ Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
2
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Absolute Maximum Ratings
Max.
Parameter
Units
125
Power Dissipation
Power Dissipation
Power Dissipation
W
P
P
P
@TC = 25°C
@TC = 100°C
@TA = 25°C
D
D
D
P
J
63
3.3
270
Peak Soldering Temperature
Operating Junction and
°C
T
T
T
-55 to + 175
Storage Temperature Range
STG
Thermal Resistance
Parameter
Typ.
–––
12.5
20
Max.
45
Units
RθJA
Junction-to-Ambient
RθJA
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Can
–––
–––
1.2
RθJA
°C/W
RθJ-Can
RθJ-PCB
–––
–––
Junction-to-PCB Mounted
0.5
10
1
D = 0.50
0.20
0.10
0.05
0.1
R1
R1
R2
R2
R3
R3
R4
Ri (°C/W) τi (sec)
R4
0.02
0.01
0.1080
0.6140
0.4520
1.47e-05
0.000171
0.053914
0.006099
0.036168
τ
τ
J τJ
τ
Cτ
0.01
0.001
0.0001
1τ1
Ci= τi/Ri
τ
τ
τ
2 τ2
3τ3
4τ4
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Notes:
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple incontact with top (Drain) of part.
Used double sided cooling, mounting pad with large heatsink.
R is measured at TJ of approximately 90°C.
θ
Surface mounted on 1 in. square Cu
board (still air).
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink. (still air)
3
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IRF7769L2PbF
1000
100
10
1000
100
10
VGS
15V
VGS
15V
10V
8.0V
6.0V
5.0V
4.5V
4.0V
3.5V
TOP
TOP
10V
8.0V
6.0V
5.0V
4.5V
4.0V
3.5V
BOTTOM
BOTTOM
1
3.5V
3.5V
60μs PULSE WIDTH
≤
60μs PULSE WIDTH
Tj = 175°C
≤
Tj = 25°C
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 4. Typical Output Characteristics
Fig 5. Typical Output Characteristics
1000
2.5
2.0
1.5
1.0
0.5
V
= 25V
I
= 74A
DS
≤ 60μs PULSE WIDTH
D
V
= 10V
GS
100
10
1
T
T
T
= 175°C
= 25°C
= -40°C
J
J
J
0.1
2.0
2.5
V
3.0
3.5
4.0
4.5
5.0
5.5
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
, Gate-to-Source Voltage (V)
GS
T
, Junction Temperature (°C)
J
Fig 6. Typical Transfer Characteristics
Fig 7. Normalized On-Resistance vs. Temperature
100000
14
V
C
= 0V,
f = 1 MHZ
GS
I = 74A
D
= C + C , C SHORTED
iss
gs
gd ds
V
V
V
= 80V
= 50V
= 20V
12
10
8
DS
DS
DS
C
= C
rss
gd
C
= C + C
ds
oss
gd
Ciss
10000
1000
100
Coss
Crss
6
4
2
0
0
50
100
150
200
250
300
1
10
100
Q
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 9. Typical Total Gate Charge vs
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
Gate-to-Source Voltage
4
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IRF7769L2PbF
10000
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100μsec
T
T
T
= 175°C
= 25°C
= -40°C
J
J
J
DC
10msec
1
1
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
V
= 0V
GS
0.1
0.1
0
1
10
100
1000
0.2
0.4
V
0.6
0.8
1.0
1.2
V
, Drain-toSource Voltage (V)
DS
, Source-to-Drain Voltage (V)
SD
Fig 10. Typical Source-Drain Diode Forward Voltage
Fig11. Maximum Safe Operating Area
125
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
I
I
I
= 1.0A
D
D
D
= 1.0mA
= 250μA
100
75
50
25
0
25
50
75
100
125
150
175
-75 -50 -25
0
J
25 50 75 100 125 150 175
, Temperature ( °C )
T
, CaseTemperature (°C)
T
C
Fig 13. Typical Threshold Voltage vs.
Fig 12. Maximum Drain Current vs. Case Temperature
Junction Temperature
1200
I
D
TOP
13A
20A
1000
800
600
400
200
0
BOTTOM 74A
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
Fig 14. Maximum Avalanche Energy Vs. Drain Current
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IRF7769L2PbF
1000
100
10
Allowed avalanche Current vs avalanche
Duty Cycle = Single Pulse
pulsewidth, tav, assuming Tj = 150°C and
Δ
Tstart =25°C (Single Pulse)
0.01
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 19a, 19b.
280
240
200
160
120
80
TOP
BOTTOM 1% Duty Cycle
= 74A
Single Pulse
I
D
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
40
0
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Fig 16. Maximum Avalanche Energy Vs. Temperature
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·ta
Driver Gate Drive
P.W.
D.U.T
Period
D =
Period
P.W.
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
-
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
• di/dt controlled by RG
Re-Applied
Voltage
RG
+
-
• Driver same type as D.U.T.
Body Diode
Inductor Current
Forward Drop
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Diode Reverse Recovery Test Circuit for N-Channel HEXFET® Power MOSFETs
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6
IRF7769L2PbF
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
20K
Qgs1
Qgs2
Qgodr
Qgd
Fig 18a. Gate Charge Test Circuit
Fig 18b. Gate Charge Waveform
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
V
R
D.U.T
AS
GS
G
V
DD
-
I
A
20V
t
0.01Ω
p
I
AS
Fig 19b. Unclamped Inductive Waveforms
Fig 19a. Unclamped Inductive Test Circuit
RD
VDS
V
DS
90%
VGS
D.U.T.
RG
+
VDD
-
VGS
10%
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 20a. Switching Time Test Circuit
Fig 20b. Switching Time Waveforms
7
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IRF7769L2PbF
DirectFET Board Footprint, L8 (Large Size Can).
Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations
G = GATE
D = DRAIN
S = SOURCE
D
D
D
D
D
D
S
S
S
S
S
S
S
S
G
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
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IRF7769L2PbF
DirectFET Outline Dimension, L8 Outline (LargeSize Can).
Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations
DIMENSIONS
IMPERIAL
MIN
METRIC
MAX
CODE
MIN
9.05
6.85
5.90
0.55
0.58
1.18
0.98
0.73
0.38
1.34
2.52
0.616
0.020
0.09
MAX
0.360
0.280
0.236
0.026
0.024
0.048
0.017
0.030
0.017
0.058
0.106
0.0274
0.0031
0.007
9.15
7.10
6.00
0.356
0.270
0.232
A
B
C
D
E
F
0.65 0.022
0.62
1.22
1.02
0.77
0.42
0.023
0.046
0.015
0.029
0.015
G
H
J
1.47 0.053
K
L
2.69
0.099
0.676
0.080
0.18
M
N
P
0.0235
0.0008
0.003
DirectFET Part Marking
GATE MARKING
LOGO
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
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IRF7769L2PbF
DirectFET Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm Std reel
quantity is 4000 parts. (ordered as IRF7769L2PBF).
REEL DIMENSIONS
STANDARD OPTION (QTY 4000)
METRIC
MAX
IMPERIAL
CODE
MIN
MIN
MAX
N.C
A
B
C
D
E
F
12.992
0.795
0.504
0.059
3.937
N.C
330.0
20.2
12.8
1.5
N.C
N.C
13.2
N.C
N.C
22.4
18.4
18.4
N.C
0.520
N.C
100.0
N.C
N.C
0.889
0.724
0.724
G
H
0.646
0.626
16.4
15.9
LOADED TAPE FEED DIRECTION
NOTE: CONTROLLING
DIMENSIONS IN MM
DIMENSIONS
METRIC
IMPERIAL
CODE
MIN
MAX
0.476
0.161
0.642
0.299
0.291
0.398
NC
MIN
MAX
12.10
4.10
0.469
0.154
0.626
0.291
0.284
0.390
0.059
0.059
A
B
C
D
E
F
11.90
3.90
15.90
7.40
7.20
9.90
1.50
1.50
16.30
7.60
7.40
10.10
NC
G
H
0.063
1.60
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
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IRF7769L2PbF
Qualification Information†
Industrial ††
Qualification level
(per JEDEC JESD47F††† guidelines)
Comments: This family of products has passed JEDEC’s Industrial
qualification. IR’s Consumer qualification level is granted by extension of the
higher Industrial level.
MSL1
Moisture Sensitivity Level
RoHS Compliant
DFET2
(per JEDEC J-STD-020D†††
)
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
Comments
•
•
Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #264).
Updated data sheet based on corporate template.
5/6/2014
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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相关型号:
IRF7779L2TR1PBF
Power Field-Effect Transistor, 11A I(D), 150V, 0.0011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-9
INFINEON
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