IRF7799L2TR [INFINEON]
DirectFETPower MOSFET; ??的DirectFET功率MOSFET型号: | IRF7799L2TR |
厂家: | Infineon |
描述: | DirectFETPower MOSFET |
文件: | 总11页 (文件大小:314K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 96266
IRF7799L2TRPbF
IRF7799L2TR1PbF
DirectFET Power MOSFET
l RoHS Compliant, Halogen Free
Typical values (unless otherwise specified)
l Lead-Free (Qualified up to 260°C Reflow)
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Optimized for Synchronous Rectification
VDSS
250V min ± 30V max
VGS
RDS(on)
32mΩ@ 10V
Vgs(th)
Qg tot
Qgd
l Low Conduction Losses
110nC
39nC
4.0V
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount Techniques
l Industrial Qualified
S
S
S
S
S
S
S
S
G
D
D
DirectFET ISOMETRIC
L8
Applicable DirectFET Outline and Substrate Outline
SB
SC
M2
M4
L4
L6
L8
Description
The IRF7799L2TR/TR1PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to
achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The DirectFET package
is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package
allows dual sided cooling to maximize thermal transfer in power systems.
The IRF7799L2TR/TR1PbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses
in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system
reliability improvements, and makes this device ideal for high performance power converters.
Absolute Maximum Ratings
Max.
250
±30
35
Parameter
Units
VDS
Drain-to-Source Voltage
Gate-to-Source Voltage
V
V
GS
(Silicon Limited)
(Silicon Limited)
(Silicon Limited)
(Package Limited)
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
I
I
@ TC = 25°C
D
D
D
D
25
@ TC = 100°C
@ TA = 25°C
@ TC = 25°C
6.6
A
375
140
325
21
DM
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
200
180
160
140
120
100
80
60
55
50
45
40
35
30
25
I
= 21A
T
= 25°C
D
J
Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
Vgs = 15V
T
= 125°C
J
60
40
T
= 25°C
16
J
20
0
20
40
60
80
100
4
8
12
20
I
, Drain Current (A)
D
V
Gate -to -Source Voltage (V)
GS,
Fig 2. Typical On-Resistance vs. Drain Current
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
TC measured with thermocouple mounted to top (Drain) of part.
ꢀ Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 1.42mH, RG = 25Ω, IAS = 21A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
1
08/31/09
IRF7799L2TR/TR1PbF
Static @ TJ = 25°C (unless otherwise specified)
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 2mA
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
250
–––
–––
3.0
–––
0.12
32
–––
V
V
/ T
∆
J
∆Β
––– V/°C
DSS
VGS = 10V, ID = 21A
RDS(on)
VGS(th)
38
mΩ
V
VDS = VGS, ID = 250µA
4.0
5.0
∆VGS(th)/∆TJ
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
54
-13
–––
–––
–––
–––
–––
110
26
––– mV/°C
VDS = 250V, VGS = 0V
20
1
µA
VDS = 250V, VGS = 0V, TJ = 125°C
1mA
V
V
V
GS = 20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
-100
–––
165
–––
–––
nA
S
GS = -20V
DS = 50V, ID = 21A
gfs
Qg
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
VDS = 125V
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
VGS = 10V
ID = 21A
5.7
nC
39
39
–––
–––
–––
–––
–––
–––
–––
–––
See Fig. 9
45
VDS = 16V, VGS = 0V
33
nC
Gate Resistance
0.73
36.3
33.5
73.9
26.6
Ω
VDD = 125V, VGS = 10V
td(on)
tr
td(off)
tf
Turn-On Delay Time
ID = 21A
Rise Time
ns
RG=6.2Ω
Turn-Off Delay Time
Fall Time
VGS = 0V
Ciss
Coss
Crss
Coss
Coss
Input Capacitance
––– 6714 –––
VDS = 25V
Output Capacitance
–––
–––
606
157
–––
–––
pF ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, f=1.0MHz
Reverse Transfer Capacitance
Output Capacitance
––– 5063 –––
––– 217 –––
VGS = 0V, VDS = 80V, f=1.0MHz
Output Capacitance
Diode Characteristics
Conditions
MOSFET symbol
Parameter
Continuous Source Current
Min. Typ. Max. Units
IS
–––
–––
35
showing the
(Body Diode)
A
ISM
integral reverse
Pulsed Source Current
(Body Diode)
–––
–––
140
p-n junction diode.
TJ = 25°C, IS = 21A, VGS = 0V
TJ = 25°C, IF = 21A, VDD = 50V
di/dt = 100A/µs
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
132
1.3
V
198
ns
nC
Qrr
––– 1412 2118
2
www.irf.com
IRF7799L2TR/TR1PbF
Absolute Maximum Ratings
Max.
125
Parameter
Units
Power Dissipation
Power Dissipation
Power Dissipation
P
P
P
@TC = 25°C
@TC = 100°C
@TA = 25°C
D
D
D
P
J
63
W
4.3
270
T
T
T
Peak Soldering Temperature
Operating Junction and
-55 to + 175
°C
Storage Temperature Range
STG
Thermal Resistance
Parameter
Typ.
–––
12.5
20
Max.
35
Units
RθJA
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Can
RθJA
–––
–––
1.2
RθJA
°C/W
RθJ-can
RθJ-PCB
–––
–––
Junction-to-PCB Mounted
0.5
10
1
D = 0.50
0.20
0.10
0.1
R1
R1
R2
R2
Ri (°C/W) τi (sec)
0.05
τ
J τJ
τ
τ
0.38829
0.000787
Cτ
0.02
0.01
1 τ1
Ci= τi/Ri
τ
2τ2
0.8117
0.006586
0.01
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Notes:
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple incontact with top (Drain) of part.
Used double sided cooling, mounting pad with large heatsink.
R is measured at TJ of approximately 90°C.
θ
Surface mounted on 1 in. square Cu
board (still air).
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink. (still air)
www.irf.com
3
IRF7799L2TR/TR1PbF
1000
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
100
10
1
BOTTOM
BOTTOM
5.0V
1
5.0V
60µs PULSE WIDT
60µs PULSE WIDT
Tj = 175°C
≤
Tj = 25°C
≤
0.1
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 4. Typical Output Characteristics
Fig 5. Typical Output Characteristics
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1000
I
= 21A
V
= 50V
D
DS
V
= 10V
≤
60µs PULSE WIDTH
GS
100
10
1
T
= 175°C
J
TJ = 25°C
TJ = -40°C
0.1
-60 -40 -20 0 20 40 60 80 100120140160180
, Junction Temperature (°C)
3
4
5
6
7
T
J
V
, Gate-to-Source Voltage (V)
GS
Fig 6. Typical Transfer Characteristics
Fig 7. Normalized On-Resistance vs. Temperature
14.0
100000
V
= 0V,
= C
f = 1 MHZ
GS
I = 21A
D
C
C
C
+ C , C
SHORTED
ds
iss
gs
gd
12.0
= C
rss
oss
gd
V
V
= 200V
= 125V
DS
DS
= C + C
ds
gd
10.0
8.0
6.0
4.0
2.0
0.0
VDS= 50V
10000
1000
100
C
iss
C
oss
C
rss
0
20 40 60 80 100 120 140 160
1
10
100
1000
Q
, Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 9. Typical Total Gate Charge vs
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
Gate-to-Source Voltage
4
www.irf.com
IRF7799L2TR/TR1PbF
1000
100
10
1000
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100
10
1
T
= 175°C
J
TJ = 25°C
TJ = -40°C
100µsec
DC
1msec
1
10msec
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
0.1
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
, Source-to-Drain Voltage (V)
1
1
10
100
1000
V
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 10. Typical Source-Drain Diode Forward Voltage
Fig11. Maximum Safe Operating Area
6.0
5.0
4.0
3.0
2.0
1.0
40
30
20
10
0
I
= 250µA
D
ID = 1.0mA
ID = 1.0A
-75 -50 -25
0
25 50 75 100 125 150 175
25
50
75
100
125
150
175
T
, Temperature ( °C )
T
, Case Temperature (°C)
J
C
Fig 13. Typical Threshold Voltage vs.
Fig 12. Maximum Drain Current vs. Case Temperature
Junction Temperature
1400
1200
1000
800
600
400
200
0
I
D
TOP
1.33A
2.53A
BOTTOM 21A
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
Fig 14. Maximum Avalanche Energy Vs. Drain Current
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5
IRF7799L2TR/TR1PbF
100
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Tj = 150°C and
Tstart =25°C (Single Pulse)
0.01
10
1
0.05
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τj = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
Notes on Repetitive Avalanche Curves , Figures 13, 14:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 16a, 16b.
350
TOP
BOTTOM 1.0% Duty Cycle
= 21A
Single Pulse
300
250
200
150
100
50
I
D
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
0
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Fig 16. Maximum Avalanche Energy Vs. Temperature
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·ta
Driver Gate Drive
P.W.
D.U.T
Period
D =
Period
P.W.
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
-
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
• di/dt controlled by RG
Re-Applied
Voltage
RG
+
-
• Driver same type as D.U.T.
Body Diode
Inductor Current
Forward Drop
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Diode Reverse Recovery Test Circuit for N-Channel HEXFET® Power MOSFETs
6
www.irf.com
IRF7799L2TR/TR1PbF
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
20K
Qgs1
Qgs2
Qgodr
Qgd
Fig 18a. Gate Charge Test Circuit
Fig 18b. Gate Charge Waveform
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
V
R
D.U.T
AS
GS
G
V
DD
-
I
A
20V
t
0.01Ω
p
I
AS
Fig 19b. Unclamped Inductive Waveforms
Fig 19a. Unclamped Inductive Test Circuit
RD
VDS
V
DS
90%
VGS
D.U.T.
RG
+
VDD
-
VGS
10%
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 20a. Switching Time Test Circuit
Fig 20b. Switching Time Waveforms
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7
IRF7799L2TR/TR1PbF
DirectFET Board Footprint, L8 (Large Size Can).
Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations
G = GATE
D = DRAIN
S = SOURCE
D
D
D
D
D
D
S
S
S
S
S
S
S
S
G
8
www.irf.com
IRF7799L2TR/TR1PbF
DirectFET Outline Dimension, L8 Outline (LargeSize Can).
Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations
DIMENSIONS
IMPERIAL
MIN
0.356
7.10 0.270
METRIC
MAX
9.15
CODE MIN
MAX
0.360
0.280
0.236
0.026
0.024
0.048
0.017
0.030
0.017
0.058
0.106
0.0274
0.0031
0.007
A
B
C
D
E
F
9.05
6.85
5.90
0.55
0.58
1.18
0.98
0.73
0.38
1.34
2.52
0.616
0.020
0.09
6.00
0.65
0.232
0.022
0.62 0.023
1.22
1.02
0.046
0.015
G
H
J
0.77 0.029
0.42
1.47
0.015
0.053
K
L
2.69 0.099
0.676
0.080
0.18
M
N
P
0.0235
0.0008
0.003
DirectFET Part Marking
GATE MARKING
LOGO
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
www.irf.com
9
IRF7799L2TR/TR1PbF
DirectFET Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm Std reel
quantity is 4000 parts. (ordered as IRF7799L2PBF).
REEL DIMENSIONS
STANDARD OPTION (QTY 4000)
METRIC
MAX
IMPERIAL
CODE
MIN
MIN
MAX
N.C
A
B
C
D
E
F
12.992
0.795
0.504
0.059
3.937
N.C
330.0
20.2
12.8
1.5
N.C
N.C
13.2
N.C
N.C
22.4
18.4
18.4
N.C
0.520
N.C
100.0
N.C
N.C
0.889
0.724
0.724
G
H
0.646
0.626
16.4
15.9
LOADED TAPE FEED DIRECTION
NOTE: CONTROLLING
DIMENSIONS IN MM
DIMENSIONS
METRIC
IMPERIAL
CODE
MIN
MIN
MAX
12.10
4.10
16.30
7.60
7.40
10.10
NC
MAX
0.476
0.161
0.642
0.299
0.291
0.398
NC
A
B
C
D
E
F
0.469
0.154
0.626
0.291
0.284
0.390
0.059
0.059
11.90
3.90
15.90
7.40
7.20
9.90
1.50
1.50
G
H
1.60
0.063
10
www.irf.com
IRF7799L2TR/TR1PbF
Part number
Package Type
Standard Pack
Form
Tape and Reel
Tape and Reel
Note
Quantity
4000
1000
IRF7799L2TRPbF
IRF7799L2TR1PbF
DirectFET2 Large Can
DirectFET2 Large Can
"TR" suffix
"TR1" suffix
Qualification Information†
Industrial ††
(per JEDEC JESD47F††† guidelines)
Qualification level
Comments: This family of products has passed JEDEC’s Industrial
qualification. IR’s Consumer qualification level is granted by extension of the
higher Industrial level.
MSL1
Moisture Sensitivity Level
RoHS Compliant
DFET2
(per JEDEC J-STD-020D†††
)
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Data and specifications subject to change without notice.
This product has been designed and qualified to MSL1 rating for the Industrial market.
Additional storage requirement details for DirectFET products can be found in application note AN1035 on IRs Web site.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/2009
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11
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