IRF7805PBF-1_15 [INFINEON]
Industry-standard pinout SO-8 Package;
| 型号： | IRF7805PBF-1_15 |
| 厂家： | 
Infineon |
| 描述： | Industry-standard pinout SO-8 Package |
| 文件： | 总6页 (文件大小：195K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRF7805TRPbF-1
HEXFET® Chip-Set for DC-DC Converters
VDS
30
11
22
13
V
A
D
1
2
3
4
8
S
S
RDS(on) max
(@VGS = 4.5V)
Qg (typical)
ID
m
Ω
7
D
nC
A
6
5
S
D
D
G
(@TA = 25°C)
SO-8
Top View
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
⇒
MSL1, Industrial qualification
Standard Pack
Form
Tape and Reel
Base Part Number
Package Type
Orderable Part Number
Quantity
4000
IRF7805TRPbF-1
IRF7805PbF-1
SO-8
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Max.
Units
V
VDS
30
± 12
13
V
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
@ TA = 25°C
D
D
@ TA = 70°C
10
A
100
2.5
1.6
DM
Power Dissipation
P
P
@TA = 25°C
@TA = 70°C
W
D
D
Power Dissipation
Linear Derating Factor
Operating Junction and
0.02
W/°C
°C
T
T
-55 to + 150
J
Storage Temperature Range
STG
Thermal Resistance
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
Max.
20
Units
°C/W
Rθ
Rθ
JL
–––
50
JA
1
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IRF7805TRPbF-1
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250μA
VGS = 4.5V, ID = 7.0A
VDS = VGS, ID = 250μA
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
BVDSS
RDS(on)
VGS(th)
IDSS
30
–––
9.2
–––
–––
–––
–––
–––
–––
22
–––
V
–––
1.0
11
Ω
m
3.0
70
V
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
DS = 30V, VGS = 0V
DS = 24V, VGS = 0V
10
V
μA
150
100
-100
31
VDS = 24V, VGS = 0V, TJ = 100°C
VGS = 12V
IGSS
Gate-to-Source Forward Leakage
nA
nC
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = -12V
Qg
VGS = 5.0V
Qgs1
Qgs2
Qgd
Qsw
Qoss
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Switch Charge (Qgs2 + Qgd)
Output Charge
3.7
1.4
6.8
8.2
3.0
–––
–––
–––
11.5
3.6
VDS = 16V
ID = 7.0A
nC
VDS = 16V, VGS = 0V
RG
td(on)
tr
Gate Resistance
Turn-On Delay Time
Rise Time
0.5
–––
–––
–––
–––
1.7
–––
–––
–––
–––
Ω
–––
16
V
DD = 16V, VGS = 4.5V
20
38
16
ID = 7.0A
ns
td(off)
tf
Ω
Turn-Off Delay Time
Fall Time
RG= 2
Resistive Load
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
–––
–––
2.5
MOSFET symbol
(Body Diode)
Pulsed Source Current
showing the
integral reverse
A
ISM
–––
–––
106
(Body Diode)
p-n junction diode.
T = 25°C, I = 7.0A, V = 0V
J S GS
Diode Forward Voltage
VSD
Qrr
–––
–––
–––
88
1.2
V
Reverse Recovery Charge
–––
di/dt = 700A/μs
= 16V, V = 0V, I = 7.0A
nC
V
DS
GS
S
Qrr(s)
Reverse Recovery Charge
(with Parallel Schottky)
–––
55
–––
di/dt = 700A/μs (with 10BQ040)
= 16V, V = 0V, I = 7.0A
nC
V
DS
GS
S
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 300 μs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t < 10 sec.
Typ = measured - Qoss
ꢀ
Rθ is measured at T of approximately 90°C.
Devices are 100% tJested to these parameters.
2
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IRF7805TRPbF-1
Typical Characteristics
Fig 1. Normalized On-Resistance vs. Temperature
Fig 2. Typical Gate Charge vs. Gate-to-Source Voltage
10
°
T = 150 C
J
1
°
T = 25 C
J
V
= 0 V
GS
0.1
0.4
0.5
0.6
0.7
0.8
0.9
V
,Source-to-Drain Voltage (V)
SD
Fig 4. Typical Source-Drain Diode Forward Voltage
Fig 3. Typical Rds(on) vs. Gate-to-Source Voltage
100
D = 0.50
0.20
10
0.10
0.05
0.02
P
2
DM
0.01
1
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
J
x Z
+ T
A
DM
thJA
0.1
0.001
0.01
0.1
1
10
100
1000
t , Rectangular Pulse Duration (sec)
1
Figure 5. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
3
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IRF7805TRPbF-1
SO-8 Package Details
INCHES
MIN MAX
.0532 .0688
MILLIMETERS
DIM
A
D
B
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
A1 .0040 .0098
b
c
D
E
.013
.0075 .0098
.189 .1968
.020
8
1
7
2
6
3
5
6
H
E
0.25 [.010]
A
.1497 .1574
.050 BASIC
4
e
1.27 BAS IC
0.635 BASIC
e1 .025 BASIC
H
K
L
.2284 .2440
.0099 .0196
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
.016
0°
.050
8°
y
e1
A
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
F OOT PRINT
8X 0.72 [.028]
NOTES:
1. DIMENSIONING& TOLERANCINGPER ASME Y14.5M-1994.
2. CONTROLLINGDIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TOJEDECOUTLINE MS-012AA.
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROT RUS IONS .
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
DIMENSION DOES NOT INCLUDE MOLD PROT RUS IONS .
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERINGTO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DATE CODE (YWW)
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF THE YEAR
WW = WEE K
XXXX
F7101
INTERNATIONAL
RECTIFIER
LOGO
A= ASSEMBLY SITE CODE
LOT CODE
PART NUMBER
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
4
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October 16, 2014
IRF7805TRPbF-1
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
5
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October 16, 2014
IRF7805TRPbF-1
Qualification information†
Industrial
(per JEDEC JESD47F†† guidelines)
Qualification level
MS L 1
Moisture Sensitivity Level
RoHS compliant
SO-8
(per JEDEC J-STD-020D††
Yes
)
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
Revision History
Date
Comments
•
•
Corrected part number from" IRF7805PbF-1" to "IRF7805TRPbF-1" -all pages
10/16/2014
Removed the "IRF7805PbF-1" bulk part number from ordering information on page1
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
TocontactInternationalRectifier, pleasevisithttp://www.irf.com/whoto-call/
6
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October 16, 2014
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