IRF7828 [INFINEON]
HEXFET Power MOSFET for DC-DC Converters; HEXFET功率MOSFET的DC- DC转换器
| 型号： | IRF7828 |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET for DC-DC Converters |
| 文件： | 总6页 (文件大小：480K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 9460±
IRF78±8
HEXFET® Power MOSFET for DC-DC Converters
• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
A
D
1
±
3
4
8
7
S
S
D
Description
6
5
S
D
D
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
G
SO-8
Top View
DEVICE CHARACTERISTICSꢀ
The IRF78±8 has been optimized for all parameters that
are critical in synchronous buck converters including
IRF7828
RDS(on), gate charge and Cdv/dt-induced turn-on immunity.
The IRF78±8 offers particulary low RDS(on) and high Cdv/
dt immunity for synchronous FET applications.
RDS
QG
9.5mΩ
9.±nC
3.7nC
6.1nC
(on)
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 3W is possible in a typical
PCB mount application.
Qsw
Qoss
Absolute Maximum Ratings
Parameter
Symbol
IRF7828
Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (VGS ≥ 4.5V)
Pulsed Drain Current
Power Dissipation
VDS
VGS
ID
30
±±0
V
TA = ±5°C
TL = 70°C
13.6
11
A
IDM
PD
100
TA = ±5°C
TL = 70°C
±.5
W
1.6
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
TJ,TSTG
IS
–55 to 150
3.1
°C
A
ISM
100
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
Max.
50
Units
°C/W
°C/W
RθJA
RθJL
±0
1±/5/0±
IRF78±8
Electrical Characteristics
Parameter
Min Typ Max Units
Conditions
Drain-to-Source
BVDSS
30
–
–
V
VGS = 0V, ID = ±50µA
Breakdown Voltage
Static Drain-Source
on Resistance
RDS
–
9.5 1±.5 mΩ
VGS = 4.5V, ID = 10A
(on)
Gate Threshold Voltage
Drain-Source Leakage
VGS(th)
IDSS
1.0
–
–
–
–
V
VDS = VGS,ID = ±50µA
VDS = ±4V, VGS = 0
1.0
Current
–
–
150
µA
nA
VDS = ±4V, VGS = 0,
Tj = 1±5°C
Gate-Source Leakage
Current
IGSS
–
–
±100
VGS = ±±0V
Total Gate Chg Cont FET
Total Gate Chg Sync FET
QG
–
–
–
9.±
7.3
±.5
14
–
VGS= 5.0V, ID=15A, VDS=16V
VGS = 5V, VDS< 100mV
VDS = 15V, ID = 10A
QG
Pre-Vth
QGS1
–
Gate-Source Charge
Post-Vth
QGS±
–
0.8
–
nC
Gate-Source Charge
Gate to Drain Charge
Switch Chg(Qgs± + Qgd)
Output Charge
QGD
Qsw
Qoss
RG
–
–
–
–
–
–
–
–
–
–
–
±.9
3.7
–
–
–
–
–
–
–
–
–
–
–
6.1
VDS = 10V, VGS = 0
Gate Resistance
Turn-on Delay Time
Rise Time
±.3
Ω
td (on)
tr
6.3
VDD = 15V, ID = 10A
VGS = 4.5V
±.7
ns
Turn-off Delay Time
Fall Time
td
9.7
Clamped Inductive Load
(off)
tf
7.3
Input Capacitance
Output Capacitance
Ciss
Coss
1010
360
110
pF
VDS = 15V, VGS = 0
Reverse Transfer Capacitance Crss
Source-Drain Rating & Characteristics
Parameter
Min Typ Max Units
Conditions
Diode Forward
Voltage*
VSD
Qrr
–
–
1.0
V
IS = 10A, VGS = 0V
Reverse Recovery
–
13
–
nC
di/dt ~ 700A/µs
Charge
VDS = 16V, VGS = 0V, IS = 15A
Reverse Recovery
Charge (with Parallel
Schottky)
Qrr(s)
–
13
–
nC
di/dt = 700A/µs
(with 10BQ040)
VDS = 16V, VGS = 0V, IS = 15A
Notes:
ꢀ
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400 µs; duty cycle ≤ ±%.
When mounted on 1 inch square copper board
Typ = measured - Qoss
Typical values of RDS(on) measured at VGS = 4.5V, QG, QSW and QOSS
measured at VGS = 5.0V, IF = 10A.
±
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IRF78±8
1±
10
8
±.0
1.5
1.0
0.5
I
= 14A
D
I = 10A
D
V
= ±4V
DS
VDS= 15V
V
= 10V
GS
6
4
±
0
-60 -40 -±0
0
±0 40 60 80 100 1±0 140 160
0
5
10
15
±0
T
J
, Junction Temperature (°C)
Q
Total Gate Charge (nC)
G
Fig 1. Normalized On-Resistance
Fig 2. Typical Gate Charge Vs.
Vs. Temperature
Gate-to-Source Voltage
±0
15
10
5
10000
1000
100
V
= 0V,
f = 1 MHZ
GS
C
= C + C , C SHORTED
iss
gs gd ds
C
= C
rss
gd
C
= C + C
oss
ds
gd
Ciss
Coss
I
= 14A
D
Crss
10
±
4
6
8
10
1
10
, Drain-to-Source Voltage (V)
100
V
Gate -to -Source Voltage (V)
V
GS,
DS
Fig 4. Typical Capacitance Vs.
Fig 3. On-Resistance Vs. Gate Voltage
Drain-to-Source Voltage
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3
IRF78±8
100.0
100.0
10.0
1.0
T
= 150°C
J
T
= 150°C
J
10.0
1.0
T
= ±5°C
J
T
= ±5°C
V
J
V
= 15V
DS
±0µs PULSE WIDTH
= 0V
GS
0.1
0.1
±.0
3.0
4.0
5.0
6.0
0.0
0.5
1.0
1.5
V
, Gate-to-Source Voltage (V)
V
, Source-toDrain Voltage (V)
GS
SD
Fig 5. Typical Transfer Characteristics
Fig 6. Typical Source-Drain Diode
Forward Voltage
100
D = 0.50
0.±0
0.10
0.05
10
1
0.0±
0.01
0.1
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
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IRF78±8
SO-8 Package Details
INCHES
MIN MAX
.053± .0688 1.35
MILLIMETERS
DIM
A
D
- B -
MIN
MAX
1.75
0.±5
0.46
0.±5
4.98
3.99
5
A1 .0040 .0098 0.10
8
1
7
±
6
3
5
4
5
B
C
D
E
e
.014
.018
0.36
H
E
.0075 .0098 0.19
0.±5 (.010)
M
A M
- A -
.189
.150
.196
.157
4.80
3.81
e
6X
.050 BASIC
.0±5 BASIC
1.±7 BASIC
0.635 BASIC
5.80 6.±0
K x 45°
e1
e1
H
K
L
θ
.±±84 .±440
A
.011
0.16
0°
.019
.050
8°
0.±8
0.41 1.±7
0° 8°
0.48
- C -
0.10 (.004)
6
C
8X
L
8X
A1
C A S B S
B 8X
0.±5 (.010)
θ
M
RECOMMENDED FOOTPRINT
NOTES:
0.7± (.0±8 )
8X
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-198±.
±. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-01±AA.
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
MOLD PROTRUSIONS NOT TO EXCEED 0.±5 (.006).
6.46 ( .±55 )
1.78 (.070)
8X
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
6
1.±7 ( .050 )
3X
SO-8 Part Marking
www.irf.com
5
IRF78±8
SO-8 Tape and Reel
TERMINAL NUMBER 1
1±.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .31± )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
±. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(1±.99±)
MAX.
14.40 ( .566 )
1±.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
±. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: ±33 Kansas St., El Segundo, California 90±45, USA Tel: (310) ±5±-7105
TAC Fax: (310) ±5±-7903
Visit us at www.irf.com for sales contact information. 1±/0±
6
www.irf.com
相关型号：
IRF7831PBF
HEXFET Power MOSFET ( VDSS = 30V , RDS(on)max = 3.6mヘ@VGS = 10V , Qg(typ.) = 40nC )
INFINEON
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