IRF7853PBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRF7853PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总8页 (文件大小：209K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97069
IRF7853PbF
HEXFET® Power MOSFET
Applications
l Primary Side Switch in Bridge Topology
in Universal Input (36-75Vin) Isolated
DC-DC Converters
VDSS
100V
RDS(on) max
18m:@VGS = 10V
ID
8.3A
l Primary Side Switch in Push-Pull
Topology for 18-36Vin Isolated DC-DC
Converters
l SecondarySideSynchronous
Rectification Switch for 15Vout
l Suitable for 48V Non-Isolated
Synchronous Buck DC-DC Applications
A
A
D
1
8
S
2
3
4
7
S
S
D
6
D
5
G
D
Benefits
l Low Gate to Drain Charge to Reduce
SO-8
Top View
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Max.
100
± 20
8.3
Units
V
VDS
VGS
Gate-to-Source Voltage
I
I
I
@ T = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
A
D
D
A
@ T = 70°C
6.6
A
66
DM
P
@T = 25°C
2.5
W
Maximum Power Dissipation
D
A
Linear Derating Factor
0.02
W/°C
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
dv/dt
5.1
V/ns
°C
T
T
-55 to + 150
J
STG
Thermal Resistance
Parameter
Junction-to-Drain Lead
Typ.
–––
Max.
20
Units
°C/W
RθJL
RθJA
Junction-to-Ambient (PCB Mount)
–––
50
Notes through are on page 8
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1
1/5/06
IRF7853PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
100 ––– –––
0.11 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient –––
mΩ
RDS(on)
VGS(th)
IDSS
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
3.0
14.4
–––
–––
–––
–––
18
4.9
20
VGS = 10V, ID = 8.3A
VDS = VGS, ID = 100µA
V
Drain-to-Source Leakage Current
–––
–––
–––
–––
µA VDS = 100V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 125°C
nA VGS = 20V
250
100
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– -100
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Min. Typ. Max. Units
Conditions
VDS = 25V, ID = 5.0A
ID = 5.0A
gfs
11
–––
–––
S
Qg
Total Gate Charge
–––
–––
–––
–––
–––
–––
–––
–––
28
39
Qgs
Qgd
RG
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Gate Resistance
7.8
10
–––
–––
–––
–––
–––
–––
–––
nC VDS = 50V
VGS = 10V
Ω
1.4
13
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
VDD = 50V
ID = 5.0A
6.6
26
Turn-Off Delay Time
Fall Time
ns RG = 6.2Ω
VGS = 10V
VGS = 0V
6.0
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
––– 1640 –––
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
310
71
–––
–––
VDS = 25V
pF ƒ = 1.0MHz
––– 1600 –––
V
GS = 0V, VDS = 1.0V, ƒ = 1.0MHz
–––
–––
180
320
–––
–––
VGS = 0V, VDS = 80V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 80V
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
–––
–––
Max.
610
5.0
Units
mJ
EAS
IAR
Avalanche Current
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
S
I
I
Continuous Source Current
–––
–––
2.3
MOSFET symbol
S
(Body Diode)
Pulsed Source Current
A
showing the
integral reverse
G
–––
–––
66
SM
(Body Diode)
p-n junction diode.
V
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
–––
–––
45
1.3
68
V
T = 25°C, I = 5.0A, V = 0V
J S GS
SD
t
ns T = 25°C, I = 5.0A, VDD = 25V
J F
rr
di/dt = 100A/µs
Q
84
130
nC
rr
t
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
2
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IRF7853PbF
100
10
100
10
1
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
BOTTOM
BOTTOM
1
4.5V
0.1
0.01
≤ 60µs PULSE WIDTH
≤ 60µs PULSE WIDTH
Tj = 25°C
Tj = 150°C
4.5V
0.1
0.1
0.01
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100.0
2.5
I
= 8.3A
D
V
= 10V
GS
2.0
1.5
1.0
0.5
T
= 150°C
J
10.0
1.0
T
= 25°C
J
V
= 25V
DS
≤ 60µs PULSE WIDTH
0.1
3.0
4.0
5.0
6.0
7.0
-60 -40 -20
T
0
20 40 60 80 100 120 140 160
V
, Gate-to-Source Voltage (V)
GS
, Junction Temperature (°C)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
vs. Temperature
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3
IRF7853PbF
100000
20
16
12
8
V
C
= 0V,
f = 1 MHZ
GS
I = 5.0A
D
= C + C , C SHORTED
iss
gs
gd ds
V
= 80V
DS
C
= C
rss
gd
VDS= 50V
VDS= 20V
C
= C + C
10000
1000
100
oss
ds
gd
Ciss
Coss
Crss
4
0
10
0
10
20
30
40
50
1
10
, Drain-to-Source Voltage (V)
100
Q
Total Gate Charge (nC)
G
V
DS
Fig 6. Typical Gate Charge vs.
Fig 5. Typical Capacitance vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100.0
10.0
1.0
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 150°C
J
100µsec
1msec
T
= 25°C
V
10msec
J
1
Tc = 25°C
Tj = 150°C
Single Pulse
= 0V
GS
0.1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
0
1
10
100
1000
V
, Drain-toSource Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRF7853PbF
10
8
RD
VDS
VGS
10V
D.U.T.
RG
+VDD
-
6
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
4
Fig 10a. Switching Time Test Circuit
2
V
DS
90%
0
25
50
75
100
125
150
T
, CaseTemperature (°C)
C
10%
V
GS
Fig 9. Maximum Drain Current vs.
t
t
r
t
t
f
d(on)
d(off)
Ambient Temperature
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
10
1
0.10
0.05
0.02
0.01
R1
R1
R2
R2
R3
R3
Ri (°C/W) τi (sec)
τ
JτJ
τ
A
7.016
26.95
16.04
0.00474
0.04705
2.3619
τ
τ
τ
1τ1
τ
2 τ2
3τ3
0.1
Ci= τi/Ri
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = Pdm x Zthja + Ta
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7853PbF
40
35
30
25
20
15
10
40
I
= 5.0A
V
= 10V
D
GS
T
= 125°C
C
30
20
10
T
= 125°C
= 25°C
J
T
J
T
= 25°C
C
4
6
8
10
12
14
16
0
10
20
30
40
50
60
70
V
, Gate-to-Source Voltage (V)
GS
I
, Drain Current (A)
D
Fig 12. On-Resistance vs. Drain Current
Fig 13. On-Resistance vs. Gate Voltage
Q
G
VGS
L
VCC
Q
Q
GD
GS
DUT
2500
0
1K
I
V
G
D
TOP
0.23A
0.34A
5.0A
2000
1500
1000
500
0
Charge
BOTTOM
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V
(BR)DSS
DRIVER
+
L
t
p
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
25
50
75
100
125
150
20V
0.01
Ω
t
p
I
AS
Starting T , Junction Temperature (°C)
J
Fig 15c. Maximum Avalanche Energy
Fig 15a&b. Unclamped Inductive Test circuit
vs. Drain Current
and Waveforms
6
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IRF7853PbF
SO-8 Package Details
INCHES
MIN MAX
.0532 .0688
MILLIME T E RS
DIM
A
D
B
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
A1 .0040 .0098
b
c
D
E
.013
.0075 .0098
.189 .1968
.020
8
1
7
2
6
3
5
6
H
E
0.25 [.010]
A
.1497 .1574
.050 BASIC
4
e
1.27 BASIC
e1 .025 BASIC
0.635 BASIC
H
K
L
.2284 .2440
.0099 .0196
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
.016
0°
.050
8°
y
e1
A
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
FOOTPRINT
8X 0.72 [.028]
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUT LINE CONF ORMS T O JEDEC OUT L INE MS -012AA.
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERINGTO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DATE CODE (YWW)
P = DE S IGNAT E S L E AD-F R E E
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF THE YEAR
WW = WEE K
XXXX
F7101
INTERNATIONAL
RECTIFIER
LOGO
A= ASSEMBLY SITE CODE
LOT CODE
PART NUMBER
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7
IRF7853PbF
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Pulse width ≤ 400µs; duty cycle ≤ 2%.
ꢀ Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
ISD ≤ 5.0A, di/dt ≤ 320A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C.
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 49mH,
RG = 25Ω, IAS = 5.0A.
.
When mounted on 1 inch square copper
R is measured at TJ of approximately 90°C.
θ
board, t ≤ 10 sec.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.1/06
8
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