IRF7E3704 [INFINEON]
HEXFET POWER MOSFET SURFACE MOUNT (LCC-18); HEXFET功率MOSFET表面贴装（ LCC- 18 ）
| 型号： | IRF7E3704 |
| 厂家： | 
Infineon |
| 描述： | HEXFET POWER MOSFET SURFACE MOUNT (LCC-18) |
| 文件： | 总7页 (文件大小：128K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94678
HEXFET® POWER MOSFET
SURFACE MOUNT (LCC-18)
IRF7E3704
20V, N-CHANNEL
Product Summary
Part Number
BV
RDS(on)
ID
DSS
IRF7E3704
20V
0.05Ω 12A*
LCC-18
Seventh Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniquestoachievethelowestpossibleon-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
providesthedesignerwithanextremelyefficientdevice
for use in a wide variety of applications.
Features:
n
n
n
n
n
n
n
n
Low RDS(on)
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
Surface Mount
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= 10V, T = 25°C
Continuous Drain Current
12*
10
D
D
GS
GS
C
A
I
= 10V, T = 100°C Continuous Drain Current
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
48
DM
@ T = 25°C
P
D
20
W
W/°C
V
C
Linear Derating Factor
0.16
±20
120
12
V
Gate-to-Source Voltage
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
mJ
A
AS
I
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
2.0
mJ
V/ns
AR
dv/dt
1.0
T
-55 to 150
J
oC
g
T
Storage Temperature Range
STG
Pckg. Mounting Surface Temp.
Weight
300 (for 5s)
0.42 (Typical)
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
07/02/03
IRF7E3704
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
20
—
—
—
—
V
V
= 0V, I = 250µA
D
DSS
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.023
DSS
J
D
Voltage
R
V
Static Drain-to-Source On-State
Resistance
—
—
—
—
—
—
—
—
0.05
0.055
3.0
Ω
V
= 10V, I = 10A
GS D
DS(on)
➀
V
= 4.5V, I = 10A
GS
D
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
1.0
14
—
V
V
= V , I = 250µA
GS(th)
fs
DS
GS
D
Ω
g
—
20
S ( )
V
V
10V, I
= 10A ➀
DS =
DS
I
= 20V ,V =0V
DS GS
DSS
µA
—
100
V
= 16V,
DS
= 0V, T = 125°C
V
GS
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.1
100
-100
22
V
= 20V
GSS
GS
nA
nC
V
= -20V
GSS
GS
Q
Q
Q
V
= 4.5V, I = 12A
D
g
gs
10
V
DS
= 10V
6.0
16
gd
t
V
DD
V
= 10V, I = 12A,
d(on)
D
t
100
26
= 4.5V, R = 1.8Ω
GS G
r
ns
t
t
Turn-Off Delay Time
FallTime
Total Inductance
d(off)
12
—
f
L
S
+ L
D
nH
Measured from the center of
drain pad to center of source pad
C
C
C
Input Capacitance
—
—
—
1850
1005
63
—
—
—
V
= 0V, V
= 10V
f = 1.0MHz
iss
GS DS
Output Capacitance
Reverse Transfer Capacitance
pF
oss
rss
R
G
Gate Resistance
—
2.6
—
Ω
f = 1.6MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
12*
48
S
A
I
SM
V
1.4
50
60
V
T = 25°C, I = 12A, V
= 0V ➀
j
SD
S
GS
t
Q
Reverse Recovery Time
Reverse Recovery Charge
ns
nC
T = 25°C, I = 12A, di/dt ≤ 100A/µs
j
rr
F
V
≤ 16V ➀
RR
DD
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
* Current is limited by package
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
Junction-to-Case
—
—
6.25
°C/W
thJC
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
www.irf.com
IRF7E3704
100
10
1
100
10
1
VGS
VGS
10V
TOP
10V
9.0V
8.0V
7.0V
6.0V
5.0V
4.5V
TOP
9.0V
8.0V
7.0V
6.0V
5.0V
4.5V
3.5V
BOTTOM 3.5V
3.5V
BOTTOM 3.5V
µ
40 s PULSE WIDTH
Tj = 150°C
µ
40 s PULSE WIDTH
Tj = 25°C
0.1
1
10
100
0.1
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.0
1.5
1.0
0.5
0.0
100
12A
=
I
D
T
= 25°C
J
T
= 150°C
J
V
= 15V
DS
µ
40 s PULSE WIDTH
V
= 10V
GS
10
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
3.5
4
4.5
5
5.5
T , Junction Temperature ( C)
J
V
GS
, Gate-to-Source Voltage (V)
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs.Temperature
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3
IRF7E3704
12
10
8
2800
2400
2000
1600
1200
800
I
D
= 12A
V
C
= 0V,
f = 1MHz
C
GS
V
V
= 16V
= 10V
DS
DS
= C + C
SHORTED
ds
iss
gs
gd ,
gd
C
= C
gd
rss
C
= C + C
ds
oss
C
iss
C
oss
6
4
2
400
C
FOR TEST CIRCUIT
SEE FIGURE 13
rss
0
1
0
10
100
0
10
20
30
40
V
, Drain-to-Source Voltage (V)
DS
Q
, Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
100
10
1
100
10
1
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
T
= 150°C
J
100µs
= 25°C
T
J
1ms
10ms
Tc = 25°C
Tj = 150°C
V
GS
= 0V
Single Pulse
0.1
1
10
100
0.2
0.6
1.0
1.4
1.8
2.2
V
DS
, Drain-toSource Voltage (V)
V
SD
, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
4
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IRF7E3704
RD
16
12
8
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
4
V
DS
90%
0
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
CaseTemperature
Fig 10b. Switching Time Waveforms
10
D = 0.50
0.20
1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
2
DM
0.1
t
1
t
2
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF7E3704
300
240
180
120
60
I
D
TOP
5.4A
7.6A
12A
1 5V
BOTTOM
DRIVER
L
V
G
DS
.
D.U.T
AS
R
+
V
D D
-
I
A
V
2
GS
0.01
t
Ω
p
Fig 12a. Unclamped Inductive Test Circuit
0
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
V
(BR)DSS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
4.5V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRF7E3704
Footnotes:
➀ I
≤ 12A, di/dt ≤ 100A/µs,
➀ Repetitive Rating; Pulse width limited by
SD
DD
V
≤ 20V, T ≤ 150°C
maximum junction temperature.
J
➀ V
DD
= 15V, starting T = 25°C, L = 1.7mH
J
➀ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Peak I
= 12A, V
=10V, R = 25Ω
G
GS
AS
Case Outline and Dimensions — LCC-18
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 07/03
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7
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