IRF7F3704 [INFINEON]
HEXFET㈢ POWER MOSFET THRU-HOLE (TO-39) 20V, N-CHANNEL; HEXFET㈢功率MOSFET直通孔（ TO- 39 ） 20V的N通道
| 型号： | IRF7F3704 |
| 厂家： | 
Infineon |
| 描述： | HEXFET㈢ POWER MOSFET THRU-HOLE (TO-39) 20V, N-CHANNEL |
| 文件： | 总7页 (文件大小：177K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-94340B
HEXFET® POWER MOSFET
THRU-HOLE (TO-39)
IRF7F3704
20V, N-CHANNEL
Product Summary
Part Number
BV
RDS(on)
ID
DSS
IRF7F3704
20V
0.035Ω 12A*
Seventh Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniquestoachievethelowestpossibleon-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient
device for use in a wide variety of applications.
TO-39
Features:
n
n
n
n
n
n
n
Low RDS(on)
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
These devices are well-suited for applications such
as switching power supplies, motor controls, inverters,
choppers, audio amplifiers and high-energy pulse
circuits.
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= 10V, T = 25°C
Continuous Drain Current
12*
12*
D
D
GS
GS
C
A
I
= 10V, T = 100°C Continuous Drain Current
C
I
Pulsed Drain Current À
Max. Power Dissipation
48
DM
@ T = 25°C
P
D
20
W
W/°C
V
C
Linear Derating Factor
0.16
±16
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
GS
E
190
mJ
A
AS
I
12
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
2.0
mJ
V/ns
AR
dv/dt
0.5
T
-55 to 150
J
oC
g
T
Storage Temperature Range
STG
Lead Temperature
Weight
300 ( 0.063 in./1.6mm from case for 10s)
0.98 (Typical)
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
10/10/05
IRF7F3704
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
20
—
—
V
V
= 0V, I = 250µA
D
DSS
GS
Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
—
0.024
—
V/°C
DSS
J
D
Voltage
R
V
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
1.0
20
—
—
—
—
—
—
—
0.035
0.04
3.0
—
20
Ω
V
V
= 10V, I = 12A
D
Ã
DS(on)
GS
GS
= 4.5V, I = 12A
D
V
S ( )
V
V
= V , I = 250µA
GS(th)
fs
DS
DS
V
GS
D
Ω
g
=10V, I
= 12A Ã
DS
I
= 20V ,V =0V
DSS
DS GS
µA
—
100
V
= 16V,
DS
= 0V, T =125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7.0
100
-100
19
8.0
6.0
30
175
175
100
—
V
= 16V
= -16V
GSS
GSS
GS
nA
nC
V
GS
Q
Q
Q
V
=4.5V, I = 12A
g
gs
gd
d(on)
r
GS D
V
= 10V
DS
t
t
t
t
V
= 10V, I = 12A,
DD D
V = 4.5V, R = 1.8Ω
GS
G
ns
d(off)
f
L
+ L
Measured from drain lead (6mm/
0.25in. from package) to source
lead (6mm/0.25in. from package)
S
D
nH
l
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1860
990
55
—
—
—
V
= 0V, V
= 10V
f = 1.0MHz
iss
oss
rss
GS DS
pF
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Q
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
—
—
—
12*
48
1.3
57
S
SM
SD
rr
A
V
ns
nC
T = 25°C, I = 12A, V
= 0V Ã
j
S
GS
T = 25°C, I = 12A, di/dt ≤ 100A/µs
j
F
60
V
≤ 16V Ã
RR
DD
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
* Current is limited by package
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
thJC
R
thJA
Junction-to-Case
Junction-to-Ambient
—
—
—
—
6.25
175
°C/W
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2
www.irf.com
IRF7F3704
100
10
1
100
10
1
VGS
10.0V
9.0V
8.0V
7.0V
6.0V
5.0V
4.5V
VGS
10.0V
9.00V
8.0V
7.0V
6.0V
5.0V
4.5V
TOP
TOP
BOTTOM 3.5V
BOTTOM 3.5V
3.5V
3.5V
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
12A
=
I
D
1.5
1.0
0.5
0.0
°
T = 25 C
J
°
T = 150 C
J
= 15V
20µs PULSE WIDTH
V
DS
V
=10V
GS
10
3.5
4.0
4.5
5.0 5.5
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature ( C)
J
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs.Temperature
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3
IRF7F3704
2800
2400
2000
1600
1200
800
10
8
V
= 0V,
f = 1MHz
C SHORTED
ds
I = 12A
D
GS
C
= C + C
V
V
= 16V
= 10V
iss
gs
gd ,
DS
DS
C
= C
rss
gd
C
= C + C
oss
ds
gd
C
iss
6
C
oss
4
2
400
FOR TEST CIRCUIT
SEE FIGURE 13
C
rss
0
0
1
0
10
20
30
10
100
Q , Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-SourceVoltage
Gate-to-SourceVoltage
100
100
10
1
OPERATION IN THIS AREA
°
T = 150 C
J
LIMITED BY R (on)
DS
100µs
1ms
°
T = 25 C
J
10
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0 V
GS
2.8
0.1
0.4
1
0.8
1.2
1.6
2.0
2.4
3.2
1
10
100
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-toSource Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
4
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IRF7F3704
RD
20
16
12
8
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
4
V
DS
90%
0
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
CaseTemperature
Fig 10b. Switching Time Waveforms
10
D = 0.50
0.20
1
0.10
0.05
0.02
0.01
P
2
DM
SINGLE PULSE
(THERMAL RESPONSE)
0.1
t
1
t
2
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
J
x Z
+ T
thJC C
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF7F3704
500
400
300
200
100
0
I
D
TOP
5.4A
7.6A
15V
BOTTOM 12A
DRIVER
+
L
V
DS
.
D.U.T
R
G
V
DD
-
I
A
AS
VGS
2
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
V
°
(BR)DSS
Starting T , Junction Temperature ( C)
J
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
.2µF
12V
.3µF
Q
G
+
V
4.5V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
3mA
G
I
I
D
G
Current Sampling Resistors
Charge
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRF7F3704
Footnotes:
Repetitive Rating; Pulse width limited by
I
SD
≤ 12A, di/dt ≤ 80A/µs,
≤ 20V, T ≤ 150°C
maximum junction temperature.
V
DD
J
V
= 15 V, Starting T = 25°C, L= 2.7mH
DD
Peak I
J
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
=12A, V
GS
= 10V, R = 25Ω
G
AS
Case Outline and Dimensions — TO-205AF (Modified TO-39)
LEGEND
1- SOURCE
2- GATE
3- DRAIN
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 10/2005
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7
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