IRF7NA2907SCX [INFINEON]
Power Field-Effect Transistor, 75A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETICALLY SEALED, SMD-2, 3 PIN;
| 型号： | IRF7NA2907SCX |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 75A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETICALLY SEALED, SMD-2, 3 PIN 开关 脉冲 晶体管 |
| 文件： | 总7页 (文件大小：172K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-94337C
HEXFET® POWER MOSFET
SURFACE MOUNT (SMD-2)
IRF7NA2907
75V, N-CHANNEL
Product Summary
Part Number
BV
RDS(on)
ID
DSS
IRF7NA2907
75V
0.0045Ω 75A*
Seventh Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniquestoachievethelowestpossibleon-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
providesthedesignerwithanextremelyefficientdevice
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, inverters,
choppers, audio amplifiers and high-energy pulse
circuits.
SMD-2
Features:
n
n
n
n
n
n
n
n
Low RDS(on)
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Light Weight
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= 10V, T = 25°C
Continuous Drain Current
75*
75*
D
D
GS
GS
C
A
I
= 10V, T = 100°C Continuous Drain Current
C
I
Pulsed Drain Current À
Max. Power Dissipation
300
DM
@ T = 25°C
P
D
250
W
W/°C
V
C
Linear Derating Factor
2.0
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
±20
GS
E
500
mJ
A
AS
I
75
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
25
mJ
V/ns
AR
dv/dt
6.4
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
Package Mounting Surface Temp.
Weight
300 (for 5s)
3.3 (Typical)
* Current is limited by package
For footnotes refer to the last page
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1
01/27/15
IRF7NA2907
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
75
—
—
V
V
= 0V, I = 250µA
D
GS
Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
—
0.08
—
V/°C
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
—
—
0.0045
Ω
V = 10V, I = 75A
GS D
Ã
DS(on)
V
g
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
2.0
130
—
—
—
—
—
4.0
—
20
V
S
V
= V , I = 250µA
GS(th)
fs
DS
GS
D
V
DS
= 15V, I
= 75A Ã
DS
I
V
= 75V ,V =0V
DSS
DS GS
µA
—
250
V
= 60V,
DS
= 0V, T =125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
100
-100
375
60
150
40
125
175
75
V
= 20V
= -20V
GSS
GSS
GS
nA
nC
V
GS
Q
Q
Q
V
= 10V, I = 45A
g
gs
gd
d(on)
r
GS D
V
= 60V
DS
t
t
t
t
V
= 38V, I = 45A,
DD D
V = 10V, R = 1.2Ω
GS
G
ns
Turn-Off Delay Time
Fall Time
d(off)
f
L
+ L
Total Inductance
—
Measured from the center of drain
pad to the center of source pad
S
D
nH
l
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
12000
2280
610
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
oss
rss
GS DS
pF
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Q
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
—
—
—
75*
300
1.65
175
S
SM
SD
rr
A
V
ns
T = 25°C, I = 75A, V
= 0V Ã
j
S
GS
T = 25°C, I = 45A, di/dt ≤ 100A/µs
j
F
850 nC
V
DD
≤ 25V Ã
RR
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
* Current is limited by package
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
Junction-to-Case
—
—
0.5
°C/W
thJC
Note: Corresponding Spice and Saber models are available on the international Rectifier Website.
For footnotes refer to the last page
2
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IRF7NA2907
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM4.5V
4.5V
4.5V
20µs PULSE WIDTH
T = 25 C
J
20µs PULSE WIDTH
T = 150 C
J
°
°
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
2.5
2.0
1.5
1.0
0.5
0.0
75A
=
I
D
°
T = 150 C
J
°
T = 25 C
J
V
= 25V
DS
20µs PULSE WIDTH
V
=10V
GS
4.5
5.0
5.5 6.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
V
, Gate-to-Source Voltage (V)
°
T , Junction Temperature( C)
J
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs.Temperature
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3
IRF7NA2907
20
16
12
8
20000
16000
12000
8000
I
D
= 45A
V
= 0V,
f = 1MHz
gd , ds
GS
C
= C + C
gs
C
SHORTED
V
= 60V
iss
DS
C
= C
gd
= C + C
ds
rss
C
oss
gd
C
iss
C
oss
4000
4
C
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
0
10
100
0
100
200
300
400
500
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-SourceVoltage
Gate-to-SourceVoltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
°
T = 150 C
J
100µs
1ms
°
T = 25 C
J
1
Tc = 25°C
Tj = 150°C
Single Pulse
10ms
V
= 0 V
GS
1
0.1
0.0
0.5
1.0
1.5
0
1
10
100
1000
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-toSource Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
4
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IRF7NA2907
RD
200
150
100
50
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
CaseTemperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.01
0.10
0.05
0.02
SINGLE PULSE
(THERMAL RESPONSE)
P
0.01
DM
t
1
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T =P
x Z
+ T
thJC C
J
DM
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF7NA2907
1000
800
600
400
200
0
I
D
TOP
33.5A
47.4A
BOTTOM 75A
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
20V
GS
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
V
(BR)DSS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.2µF
12V
10 V
.3µF
+
Q
Q
GD
GS
V
DS
D.U.T.
-
V
GS
V
G
3mA
I
I
D
G
Current Sampling Resistors
Charge
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRF7NA2907
Footnotes:
Repetitive Rating; Pulse width limited by
I
≤ 45A, di/dt ≤ 260A/µs,
SD
maximum junction temperature.
V
≤ 75V, T ≤ 150°C
J
DD
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
V
= 25 V, Starting T = 25°C, L= 0.17mH
J
DD
Peak I
= 75A, V
= 10V, R = 25Ω
AS
GS
G
Case Outline and Dimensions — SMD-2
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Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 01/2015
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7
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Power Field-Effect Transistor, 22A I(D), 60V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-0.5, 3 PIN
INFINEON
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