IRF8306MTRPBF [INFINEON]
HEXFET Power MOSFET plus Schottky Diode;
| 型号： | IRF8306MTRPBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET plus Schottky Diode |
| 文件： | 总9页 (文件大小：280K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97670
IRF8306MPbF
IRF8306MTRPbF
HEXFET® Power MOSFET plus Schottky Diode
Typical values (unless otherwise specified)
l RoHS Compliant Containing No Lead and Halogen Free
l Integrated Monolithic Schottky Diode
l Low Profile (<0.7 mm)
VDSS
VGS
RDS(on)
RDS(on)
30V max ±20V max
1.8mΩ@ 10V 2.8mΩ@ 4.5V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
l Dual Sided Cooling Compatible
l Ultra Low Package Inductance
25nC
6.7nC 3.0nC
29nC
22nC
1.8V
l Optimized for High Frequency Switching
l Ideal for CPU Core DC-DC Converters
l Optimized for Sync. FET socket of Sync. Buck Converter
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques
l 100% Rg tested
S
S
G
D
D
DirectFET ISOMETRIC
MX
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MT
MP
MX
Description
The IRF8306MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF8306MPbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to
reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further
reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC
converters that power high current loads such as the latest generation of microprocessors. The IRF8306MPbF has been optimized for
parameters that are critical in synchronous buck converter’s Sync FET sockets.
Absolute Maximum Ratings
Max.
30
Parameter
Units
V
VDS
Drain-to-Source Voltage
±20
23
Gate-to-Source Voltage
V
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
I
@ TA = 25°C
D
D
D
18
A
@ TA = 70°C
@ TC = 25°C
140
180
230
18
DM
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
14.0
12.0
10.0
8.0
10
8
I = 18A
V
V
= 24V
I
= 23A
D
DS
DS
D
= 15V
VDS= 6V
6
T
= 125°C
6.0
J
4
4.0
2
2.0
T
= 25°C
6
J
0.0
0
2
4
8
10 12 14 16 18 20
0
20
Q
40
60
80
Total Gate Charge (nC)
G
V
Gate -to -Source Voltage (V)
GS,
Fig 1. Typical On-Resistance vs. Gate Voltage
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
Notes:
TC measured with thermocouple mounted to top (Drain) of part.
ꢀ Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 1.37mH, RG = 50Ω, IAS = 18A.
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
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1
5/4/11
IRF8306MTRPbF
Static @ TJ = 25°C (unless otherwise specified)
Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 6mA
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
61
–––
2.7
1.8
2.8
1.8
-4.8
–––
–––
–––
–––
–––
25
–––
V
ΔΒVDSS/ΔTJ
RDS(on)
––– mV/°C
V
GS = 10V, ID = 23A
2.5
3.6
m
Ω
VGS = 4.5V, ID = 18A
VDS = VGS, ID = 100μA
VGS(th)
Gate Threshold Voltage
2.35
V
V
––– mV/°C
DS = VGS, ID = 10mA
ΔVGS(th)/ΔTJ
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 20V
500
5.0
μA
mA
nA
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
-100
–––
38
V
GS = -20V
VDS = 15V, ID = 18A
gfs
S
Qg
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
DS = 15V
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
7.3
3.0
6.7
8.0
9.7
22
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
VGS = 4.5V
ID = 18A
nC
See Fig. 15
V
DS = 16V, VGS = 0V
nC
Gate Resistance
1.3
16
Ω
VDD = 15V, VGS = 4.5V
ID = 18A
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
34
ns
R = 1.8
Ω
Turn-Off Delay Time
19
G
See Fig. 17
VGS = 0V
Fall Time
19
Ciss
Coss
Crss
Input Capacitance
––– 4110 –––
V
DS = 15V
Output Capacitance
–––
–––
970
340
–––
–––
pF
ƒ = 1.0MHz
Reverse Transfer Capacitance
Diode Characteristics
Conditions
Parameter
Min. Typ. Max. Units
IS
MOSFET symbol
showing the
Continuous Source Current
(Body Diode)
–––
–––
23
D
S
A
G
ISM
integral reverse
p-n junction diode.
Pulsed Source Current
(Body Diode)
–––
–––
180
TJ = 25°C, IS = 18A, VGS = 0V
TJ = 25°C, IF = 18A
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
0.7
21
29
0.75
32
V
ns
nC
Qrr
di/dt = 300A/μs
44
Notes:
Pulse width ≤ 400μs; duty cycle ≤ 2%.
2
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IRF8306MTRPbF
Absolute Maximum Ratings
Max.
Parameter
Units
2.1
Power Dissipation
Power Dissipation
Power Dissipation
W
P
P
P
@TA = 25°C
@TA = 70°C
@TC = 25°C
D
D
D
P
J
1.3
75
270
Peak Soldering Temperature
Operating Junction and
°C
T
T
T
-40 to + 150
Storage Temperature Range
STG
Thermal Resistance
Parameter
Typ.
–––
12.5
20
Max.
60
Units
°C/W
W/°C
RθJA
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
RθJA
–––
–––
1.66
–––
RθJA
RθJC
–––
1.0
RθJ-PCB
Junction-to-PCB Mounted
Linear Derating Factor
0.017
100
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
R1
R1
R2
R2
R3
R3
R4
τι
(sec)
Ri (°C/W)
R4
τJ
24.84696 2.379018
10.92897 0.219018
3.658783 0.00733
20.42272 15.9657
τC
τJ
τ1
τ
τ
τ
3 τ3
0.1
τ4
2 τ2
τ1
τ4
Ci= τi/Ri
0.01
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
R is measured at TJ of approximately 90°C.
Used double sided cooling , mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
θ
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
3
Mounted to a PCB with
small clip heatsink (still air)
Surface mounted on 1 in. square Cu
(still air).
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IRF8306MTRPbF
1000
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
4.5V
3.5V
3.3V
3.0V
2.8V
2.5V
2.3V
4.5V
3.5V
3.3V
3.0V
2.8V
2.5V
2.3V
100
10
1
BOTTOM
BOTTOM
2.3V
2.3V
1
≤60μs PULSE WIDTH
≤60μs PULSE WIDTH
Tj = 25°C
Tj = 150°C
0.1
1
0.1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
DS
Fig 4. Typical Output Characteristics
Fig 5. Typical Output Characteristics
1000
100
10
2.0
1.5
1.0
0.5
I
= 23A
V
= 15V
D
DS
60μs PULSE WIDTH
≤
V
V
= 10V
GS
GS
= 4.5V
T
T
T
= 150°C
= 25°C
= -40°C
J
J
J
1
0.1
1
2
3
4
-60 -40 -20
0
20 40 60 80 100120 140 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 7. Normalized On-Resistance vs. Temperature
Fig 6. Typical Transfer Characteristics
5
100000
V
C
= 0V,
f = 1 MHZ
GS
T
= 25°C
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
J
= C + C , C SHORTED
iss
gs
gd ds
C
= C
rss
gd
C
= C + C
4
3
2
1
oss
ds
gd
10000
1000
100
C
iss
C
oss
C
rss
0
50
100
150
200
1
10
, Drain-to-Source Voltage (V)
100
V
I , Drain Current (A)
DS
D
Fig 9. Typical On-Resistance vs.
Drain Current and Gate Voltage
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
4
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IRF8306MTRPbF
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100μsec
1msec
1
DC
T
T
T
= 150°C
= 25°C
= -40°C
J
J
J
1
0.1
0.01
T = 25°C
A
10msec
Tj = 150°C
Single Pulse
V
= 0V
GS
0.1
0.0
0.1
1.0
10.0
100.0
0.0
0.2
V
0.4
0.6
0.8
1.0
1.2
V
, Drain-toSource Voltage (V)
DS
, Source-to-Drain Voltage (V)
SD
Fig 10. Typical Source-Drain Diode Forward Voltage
Fig11. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
140
120
100
80
I
= 10mA
D
60
40
20
0
-75 -50 -25
0
25 50 75 100 125 150
25
50
T
75
100
125
150
T
, Temperature ( °C )
J
, Case Temperature (°C)
C
Fig 13. Typical Threshold Voltage vs. Junction
Fig 12. Maximum Drain Current vs. Case Temperature
Temperature
900
800
700
600
500
400
300
200
100
0
I
D
TOP
1.1A
1.8A
BOTTOM 18A
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
Fig 14. Maximum Avalanche Energy vs. Drain Current
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5
IRF8306MTRPbF
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
20K
Qgs1
Qgs2
Qgodr
Qgd
Fig 15a. Gate Charge Test Circuit
Fig 15b. Gate Charge Waveform
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
V
R
D.U.T
AS
GS
G
V
DD
-
I
A
20V
t
0.01Ω
p
I
AS
Fig 16b. Unclamped Inductive Waveforms
Fig 16a. Unclamped Inductive Test Circuit
RD
V
DS
VDS
90%
VGS
D.U.T.
RG
+VDD
-
VGS
10%
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
6
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IRF8306MTRPbF
Driver Gate Drive
P.W.
P.W.
D =
D.U.T
Period
Period
+
V***
=10V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
-
+
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
*
VDD
**
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple
≤ 5%
* Use P-Channel Driver for P-Channel Measurements
** Reverse Polarity for P-Channel
*** VGS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs
DirectFET Board Footprint, MX Outline
(Medium Size Can, X-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
G=GATE
D=DRAIN
S=SOURCE
D
D
D
D
S
S
G
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7
IRF8306MTRPbF
DirectFET™ Outline Dimension, MX Outline
(Medium Size Can, X-Designation)
Please see AN-1035 for DirectFET assembly details, stencil and substrate design recommendations
DIMENSIONS
METRIC
IMPERIAL
CODE MIN MAX
MIN
MAX
0.250
0.199
0.156
0.018
0.028
0.028
0.056
0.033
0.017
0.040
0.095
0.028
0.003
0.007
A
B
C
D
E
F
6.25
4.80
3.85
0.35
0.68
0.68
1.38
0.80
0.38
0.88
2.28
0.59
0.03
0.08
6.35
5.05
3.95
0.45
0.72
0.72
1.42
0.84
0.42
1.02
2.42
0.70
0.08
0.17
0.246
0.189
0.152
0.014
0.027
0.027
0.054
0.031
0.015
0.035
0.090
0.023
0.001
0.003
G
H
J
K
L
M
R
P
Dimensions are shown in
millimeters (inches)
DirectFET Part Marking
GATE MARKING
LOGO
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
8
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IRF8306MTRPbF
DirectFET Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF8306MTRPBF). For 1000 parts on 7"
reel, order IRF8306MTR1PBF
REEL DIMENSIONS
STANDARD OPTION (QTY 4800)
METRIC IMPERIAL
TR1 OPTION (QTY 1000)
METRIC IMPERIAL
MIN
12.992
0.795
0.504
0.059
3.937
N.C
MIN
6.9
MAX
N.C
N.C
0.50
N.C
N.C
0.53
N.C
N.C
CODE
MIN
MAX
N.C
MIN
MAX
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
MAX
N.C
A
B
C
D
E
F
330.0
20.2
12.8
1.5
177.77
19.06
13.5
1.5
0.75
0.53
0.059
2.31
N.C
N.C
N.C
0.520
N.C
12.8
N.C
100.0
N.C
58.72
N.C
N.C
N.C
0.724
0.567
0.606
13.50
12.01
12.01
G
H
0.488
0.469
0.47
0.47
12.4
11.9
11.9
11.9
LOADED TAPE FEED DIRECTION
DIMENSIONS
METRIC
IMPERIAL
NOTE: CONTROLLING
DIMENSIONS IN MM
CODE
MIN
MAX
0.319
0.161
0.484
0.219
0.209
0.264
N.C
MIN
7.90
3.90
11.90
5.45
5.10
6.50
1.50
1.50
MAX
8.10
4.10
12.30
5.55
5.30
6.70
N.C
A
B
C
D
E
F
0.311
0.154
0.469
0.215
0.201
0.256
0.059
0.059
G
H
1.60
0.063
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.05/2011
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9
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