IRF9358TRPBF [INFINEON]
Charge and Discharge Switch for Notebook PC Battery Application; 充电和放电开关，用于笔记本电脑电池的应用
| 型号： | IRF9358TRPBF |
| 厂家： | 
Infineon |
| 描述： | Charge and Discharge Switch for Notebook PC Battery Application |
| 文件： | 总8页 (文件大小：280K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97616
IRF9358PbF
HEXFET® Power MOSFET
VDS
-30
V
S2
G2 2
S1
G1 4
1
8
7
6
5
D2
RDS(on) max
(@VGS = -10V)
16.3
m
Ω
D2
D1
D1
RDS(on) max
(@VGS = -4.5V)
3
23.8
19
m
Ω
Qg (typical)
nC
A
SO-8
ID
-9.2
(@TA = 25°C)
Applications
• Charge and Discharge Switch for Notebook PC Battery Application
Features and Benefits
Features
Resulting Benefits
results in
Industry-Standard SO-8 Package
Multi-Vendor Compatibility
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Environmentally Friendlier
⇒
Orderable part number
Package Type
Standard Pack
Note
Form
Tube/Bulk
Quantity
95
IRF9358PbF
IRF9358TRPbF
SO8
SO8
Tape and Reel
4000
Absolute Maximum Ratings
Max.
-30
Parameter
Units
VDS
Drain-to-Source Voltage
V
± 20
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
V
GS
-9.2
I
I
I
@ TA = 25°C
D
D
-7.3
A
@ TA = 70°C
-73
DM
2.0
Power Dissipation
P
P
@TA = 25°C
@TA = 70°C
D
D
W
W/°C
°C
1.3
Power Dissipation
0.016
-55 to + 150
Linear Derating Factor
Operating Junction and
T
T
J
Storage Temperature Range
STG
Notes through are on page 2
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1
1/2/11
IRF9358PbF
Static @ TJ = 25°C (unless otherwise specified)
Conditions
VGS = 0V, ID = -250μA
Reference to 25°C, ID = -1mA
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Min. Typ. Max. Units
BVDSS
-30
–––
–––
–––
-1.3
–––
–––
–––
–––
–––
23
–––
–––
V
ΔΒVDSS/ΔTJ
RDS(on)
0.02
––– V/°C
VGS = -10V, ID = -9.2A
13.0 16.3
19.0 23.8
Static Drain-to-Source On-Resistance
mΩ
VGS = -4.5V, ID = -7.3A
VDS = VGS, ID = -25μA
VDS = -24V, VGS = 0V
VGS(th)
ΔVGS(th)
IDSS
Gate Threshold Voltage
-1.8
-5.9
–––
–––
–––
–––
–––
19
-2.4
V
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– mV/°C
-1.0
μA
V
V
V
DS = -24V, VGS = 0V, TJ = 125°C
-150
GS = -20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
-100
nA
GS = 20V
100
VDS = -10V, ID = -7.3A
gfs
Qg
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
V
DS = -15V, VGS = -4.5V, ID = - 7.3A
GS = -10V
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
V
Qg
Total Gate Charge
38
VDS = -15V
ID = -7.3A
Qgs
Qgd
RG
td(on)
tr
nC
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Resistance
5.8
8.9
15
Ω
V
DD = -15V, VGS = -4.5V
ID = -1.0A
G = 6.8Ω
See Figs. 19a &19b
Turn-On Delay Time
Rise Time
5.7
7.2
146
69
ns
pF
R
td(off)
tf
Turn-Off Delay Time
Fall Time
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 1740 –––
VDS = -25V
Output Capacitance
Reverse Transfer Capacitance
–––
–––
360
240
–––
–––
ƒ = 1.0MHz
Avalanche Characteristics
Typ.
–––
–––
Max.
Parameter
Units
mJ
EAS
IAR
210
-7.3
Single Pulse Avalanche Energy
Avalanche Current
A
Diode Characteristics
Conditions
Parameter
Min. Typ. Max. Units
IS
MOSFET symbol
D
S
Continuous Source Current
–––
–––
-2.0
showing the
(Body Diode)
A
G
ISM
integral reverse
p-n junction diode.
Pulsed Source Current
(Body Diode)
–––
–––
-73
VSD
trr
T = 25°C, I = -2.0A, V = 0V
J S GS
Diode Forward Voltage
–––
–––
–––
–––
55
-1.2
83
V
T = 25°C, I = -2.0A, VDD = -24V
Reverse Recovery Time
Reverse Recovery Charge
ns
nC
J
F
Qrr
di/dt = 100A/μs
35
53
Thermal Resistance
Typ.
–––
–––
Max.
20
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Units
RθJL
RθJA
°C/W
62.5
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 4.6mH, RG = 25Ω, IAS = -6.4A.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board.
ꢀ Rθ is measured at TJ of approximately 90°C.
For DESIGN AID ONLY, not subject to production testing.
2
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IRF9358PbF
100
10
1
100
10
VGS
-10V
VGS
-10V
TOP
TOP
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
-2.5V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
-2.5V
BOTTOM
BOTTOM
1
-2.5V
0.1
0.01
-2.5V
1
60μs PULSE WIDTH
Tj = 150°C
60μs PULSE WIDTH
Tj = 25°C
≤
≤
0.1
0.1
1
10
100
0.1
10
100
-V , Drain-to-Source Voltage (V)
-V , Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
10
1
1.6
1.4
1.2
1.0
0.8
0.6
I
= -9.2A
D
V
= -10V
GS
T
= 150°C
J
T
J
= 25°C
V
= -15V
DS
60μs PULSE WIDTH
≤
0.1
2
3
4
5
-60 -40 -20
T
0
20 40 60 80 100 120140 160
, Junction Temperature (°C)
J
-V , Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
14
10000
1000
100
V
C
= 0V,
f = 1 MHZ
GS
I
= -7.3A
D
= C + C , C SHORTED
iss
gs
gd ds
V
V
V
= -24V
= -15V
= -6.0V
12
10
8
DS
DS
DS
C
= C
rss
gd
C
= C + C
oss
ds
gd
C
iss
C
oss
rss
6
C
4
2
0
0
10
Q
20
30
40
50
1
10
100
Total Gate Charge (nC)
G
-V , Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
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3
IRF9358PbF
100
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
T
= 150°C
J
10
1
10msec
T
= 25°C
J
1msec
DC
1
T
= 25°C
A
Tj = 150°C
Single Pulse
V
= 0V
GS
0.1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
0.1
1
10
100
-V , Source-to-Drain Voltage (V)
SD
-V , Drain-to-Source Voltage (V)
DS
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
10
2.5
8
6
4
2
0
2.0
1.5
1.0
0.5
I
= -25μA
D
25
50
T
75
100
125
150
-75 -50 -25
0
25 50 75 100 125 150
, Ambient Temperature (°C)
T
, Temperature ( °C )
A
J
Fig 10. Threshold Voltage vs. Temperature
Fig 9. Maximum Drain Current vs.
AmbientTemperature
100
D = 0.50
0.20
0.10
0.05
10
1
0.02
0.01
0.1
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T
A
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
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IRF9358PbF
50
40
30
20
10
0
50
40
30
20
10
I
= -9.2A
D
T = 125°C
J
V
= -4.5V
GS
V
= -10V
60
GS
50
T = 25°C
J
2
4
6
8
10 12 14 16 18 20
0
10
20
30
40
70
-I , Drain Current (A)
D
-V
Gate -to -Source Voltage (V)
GS,
Fig 13. Typical On-Resistance vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
1000
1000
I
D
TOP
-0.9A
-1.5A
800
600
400
200
0
800
600
400
200
0
BOTTOM -7.3A
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
25
50
75
100
125
150
Time (sec)
Starting T , Junction Temperature (°C)
J
Fig 14. Maximum Avalanche Energy vs. Drain Current
Fig 15. Typical Power vs. Time
Driver Gate Drive
P.W.
Period
Period
D =
D.U.T *
P.W.
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
-
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
• di/dt controlled by RG
Re-Applied
Voltage
RG
+
-
• Driver same type as D.U.T.
Body Diode
Inductor Current
Forward Drop
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
* Reverse Polarity of D.U.T for P-Channel
Fig 16. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs
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5
IRF9358PbF
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
20K
Qgs1
Qgs2
Qgodr
Qgd
Fig 17a. Gate Charge Test Circuit
Fig 17b. Gate Charge Waveform
L
V
DS
I
AS
D.U.T
R
G
V
DD
I
A
AS
-VGS
DRIVER
0.01
Ω
t
p
t
p
V
(BR)DSS
15V
Fig 18b. Unclamped Inductive Waveforms
Fig 18a. Unclamped Inductive Test Circuit
RD
VDS
t
t
r
t
t
f
d(on)
d(off)
VGS
V
GS
D.U.T.
10%
RG
-
VDD
+
-VGS
90%
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
V
DS
Fig 19a. Switching Time Test Circuit
Fig 19b. Switching Time Waveforms
6
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IRF9358PbF
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
INCHES
MIN MAX
.0532 .0688
MILLIME T E RS
DIM
A
D
B
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
E
A1 .0040 .0098
b
c
D
E
.013
.0075 .0098
.189 .1968
.020
8
1
7
2
6
3
5
6
H
0.25 [.010]
A
.1497 .1574
.050 BASIC
4
e
1.27 BASIC
e 1 .025 BASIC
0.635 BASIC
H
K
L
.2284 .2440
.0099 .0196
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
.016
0°
.050
8°
y
e1
K x 45°
A
C
y
0.10 [.004]
8X c
A1
C A B
8X L
8X b
0.25 [.010]
7
FOOTPRINT
8X 0.72 [.028]
NOTES:
1. DIMENSIONING & TOLERANCINGPER ASME Y14.5M-1994.
2. CONTROLLINGDIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TOJEDECOUTLINE MS-012AA.
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERINGTO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DAT E CODE (YWW)
P = DISGNATES LEAD - FREE
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF THE YEAR
WW = WEE K
XXXX
F7101
A = AS S E MB L Y S IT E CODE
INTERNATIONAL
LOT CODE
RECTIFIER
LOGO
PART NUMBER
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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7
IRF9358PbF
SO-8 Tape and Reel (Dimensions are shown in milimeters (inches))
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Qualification Information†
Consumer ††
Qualification level
(per JEDEC JESD47F††† guidelines)
MSL1
(per JEDEC J-STD-020D†††
Moisture Sensitivity Level
RoHS Compliant
SO-8
)
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.01/2011
8
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