IRF9362PBF-1 [INFINEON]
Power Field-Effect Transistor;型号: | IRF9362PBF-1 |
厂家: | Infineon |
描述: | Power Field-Effect Transistor |
文件: | 总8页 (文件大小:222K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IRF9362PbF-1
HEXFET® Power MOSFET
VDS
-30
V
1
2
3
4
8
7
D1
D1
S1
RDS(on) max
(@VGS = -10V)
G1
21.0
m
Ω
6
5
S2
G2
D2
D2
RDS(on) max
(@VGS = -4.5V)
32.0
13
m
Ω
Qg (typical)
nC
A
SO-8
Top View
ID
-8.0
(@TA = 25°C)
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
⇒
MSL1, Industrial qualification
Standard Pack
Form
Tube/Bulk
Base Part Number
Package Type
Orderable Part Number
Quantity
95
4000
IRF9362PbF-1
IRF9362TRPbF-1
IRF9362PbF-1
SO-8
Tape and Reel
Absolute Maximum Ratings
Max.
-30
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Units
VDS
V
±20
V
GS
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
-8.0
-6.4
-64
2.0
I
I
I
@ TA = 25°C
D
D
A
@ TA = 70°C
DM
P
P
@TA = 25°C
@TA = 70°C
Power Dissipation
D
D
W
1.3
Power Dissipation
0.016
Linear Derating Factor
Operating Junction and
W/°C
-55 to + 150
T
T
J
°C
Storage Temperature Range
STG
Notes through are on page 2
1
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IRF9362PbF-1
Static @ TJ = 25°C (unless otherwise specified)
Conditions
VGS = 0V, ID = -250μA
Parameter
Drain-to-Source Breakdown Voltage
Min.
Typ.
–––
0.021
17.0
25.7
-1.8
-5.8
–––
–––
–––
–––
–––
13
Max.
–––
–––
21.0
32.0
-2.4
–––
-1.0
-150
-100
100
–––
–––
39
Units
V
BVDSS
ΔΒ
RDS(on)
-30
–––
–––
–––
-1.3
–––
–––
–––
–––
–––
12
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -8.0A
Δ
VDSS/ TJ
Breakdown Voltage Temp. Coefficient
V/°C
Static Drain-to-Source On-Resistance
Ω
m
VGS = -4.5V, ID = -6.4A
VGS(th)
ΔVGS(th)
IDSS
V
DS = VGS, ID = -25μA
Gate Threshold Voltage
V
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
mV/°C
V
V
V
DS = -24V, VGS = 0V
DS = -24V, VGS = 0V, TJ = 125°C
GS = -20V
μA
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
nA
VGS = 20V
DS = -10V, ID = -6.4A
V
gfs
Qg
S
VDS = -15V, VGS = -4.5V, ID = - 6.4A
VGS = -10V
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
Qg
Total Gate Charge
26
V
DS = -15V
Qgs
Qgd
RG
td(on)
tr
nC
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Resistance
3.8
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
I
D = -6.4A
6.3
17
Ω
VDD = -30V, VGS = -10V
ID = -1.0A
Turn-On Delay Time
Rise Time
5.2
5.9
ns
Ω
RG = 6.0
See Figs. 19a & 19b
VGS = 0V
td(off)
tf
Turn-Off Delay Time
Fall Time
115
53
Ciss
Coss
Crss
Input Capacitance
1300
250
170
VDS = -25V
pF
Output Capacitance
Reverse Transfer Capacitance
ƒ = 1.0kHz
Avalanche Characteristics
Typ.
–––
–––
Max.
94
Parameter
Units
mJ
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
-6.4
A
Diode Characteristics
Conditions
Parameter
Min.
Typ.
Max.
Units
IS
MOSFET symbol
Continuous Source Current
D
S
–––
–––
-2.0
showing the
(Body Diode)
A
G
ISM
integral reverse
p-n junction diode.
Pulsed Source Current
(Body Diode)
–––
–––
-64
VSD
trr
T = 25°C, I = -2.0A, V = 0V
Diode Forward Voltage
–––
–––
–––
–––
32
-1.2
48
V
J
S
GS
T = 25°C, I = -2.0A, VDD = -24V
Reverse Recovery Time
Reverse Recovery Charge
ns
nC
J
F
Qrr
di/dt = 100/μs
20
30
Thermal Resistance
Typ.
–––
–––
Max.
20
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Units
Rθ
Rθ
JL
°C/W
62.5
JA
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 4.6mH, RG = 25Ω, IAS = -6.4A.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board.
ꢀ Rθ is measured at TJ of approximately 90°C.
For DESIGN AID ONLY, not subject to production testing.
2
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IRF9362PbF-1
100
10
1
100
10
VGS
-10V
VGS
-10V
TOP
TOP
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
-2.5V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
-2.5V
BOTTOM
BOTTOM
1
-2.5V
-2.5V
0.1
0.01
60μs PULSE WIDTH
Tj = 150°C
≤
60μs PULSE WIDTH
Tj = 25°C
≤
0.1
0.1
1
10
100
0.1
1
10
100
-V , Drain-to-Source Voltage (V)
-V , Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
1.6
I
= -8.0A
D
V
= -10V
GS
1.4
1.2
1.0
0.8
0.6
10
1
T
= 150°C
J
T
= 25°C
J
V
= -15V
DS
≤
60μs PULSE WIDTH
0.1
1
2
3
4
5
6
-60 -40 -20
0
20 40 60 80 100 120140 160
T
J
, Junction Temperature (°C)
-V , Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
10000
1000
100
14.0
V
= 0V,
= C
f = 1 KHZ
GS
I
= -6.4A
V
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
12.0
10.0
8.0
= C
rss
oss
gd
= C + C
= -24V
= -15V
= -6.0V
DS
ds
gd
V
V
DS
DS
C
iss
C
6.0
oss
C
rss
4.0
2.0
0.0
0
10
20
30
40
1
10
-V , Drain-to-Source Voltage (V)
100
Q , Total Gate Charge (nC)
G
DS
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3
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IRF9362PbF-1
100
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100μsec
1msec
10msec
T
= 150°C
J
10
T
= 25°C
J
DC
1
T
= 25°C
A
Tj = 150°C
Single Pulse
V
GS
= 0V
1.0
0.1
0.3
0.5
0.7
0.9
1.1
1.3
0.01
0.1
1
10
100
-V , Source-to-Drain Voltage (V)
-V , Drain-to-Source Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
2.2
8
2.0
1.8
1.6
1.4
1.2
1.0
0.8
6
4
2
0
I
= -25μA
D
-75 -50 -25
0
25 50 75 100 125 150
25
50
75
100
125
150
T
, Temperature ( °C )
T
, Ambient Temperature (°C)
J
A
Fig 10. Threshold Voltage vs. Temperature
Fig 9. Maximum Drain Current vs.
AmbientTemperature
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
0.1
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T
SINGLE PULSE
( THERMAL RESPONSE )
A
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
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IRF9362PbF-1
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
I
= -8.0A
D
Vgs = -4.5V
T
= 125°C
= 25°C
J
T
J
Vgs = -10V
2
4
6
8
10 12 14 16 18 20
0
10
20
30
40
50
60
70
-I , Drain Current (A)
D
-V
Gate -to -Source Voltage (V)
GS,
Fig 13. Typical On-Resistance vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
1000
400
I
D
TOP
-1.8A
-2.6A
800
600
400
200
0
300
200
100
0
BOTTOM -6.4A
25
50
75
100
125
150
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
Starting T , Junction Temperature (°C)
Time (sec)
J
Fig 14. Maximum Avalanche Energy vs. Drain Current
Fig 15. Typical Power vs. Time
Driver Gate Drive
P.W.
Period
Period
D =
D.U.T *
P.W.
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
-
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
• di/dt controlled by RG
Re-Applied
Voltage
RG
+
-
• Driver same type as D.U.T.
Body Diode
Inductor Current
Forward Drop
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
* Reverse Polarity of D.U.T for P-Channel
Fig 16. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs
5
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IRF9362PbF-1
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
20K
Qgs1
Qgs2
Qgodr
Qgd
Fig 17a. Gate Charge Test Circuit
Fig 17b. Gate Charge Waveform
L
V
DS
I
AS
D.U.T
R
G
V
DD
I
A
AS
-VGS
DRIVER
0.01
Ω
t
p
t
p
V
(BR)DSS
15V
Fig 18b. Unclamped Inductive Waveforms
Fig 18a. Unclamped Inductive Test Circuit
RD
VDS
t
t
r
t
t
f
d(on)
d(off)
VGS
V
GS
D.U.T.
10%
RG
-
VDD
+
-VGS
90%
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
V
DS
Fig 19a. Switching Time Test Circuit
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Fig 19b. Switching Time Waveforms
6
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IRF9362PbF-1
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
INCHES
MILLIMETERS
DIM
A
D
B
MIN
.0532
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
E
A1 .0040
b
c
D
E
.013
8
1
7
2
6
3
5
.0075 .0098
6
H
.189
.1968
.1574
0.25 [.010]
A
.1497
4
e
.050 BASIC
1.27 BASIC
e1 .025 BASIC
0.635 BASIC
H
K
L
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
y
e1
K x 45°
A
C
y
0.10 [.004]
8X c
A1
A B
8X L
8X b
0.25 [.010]
7
C
FOOTPRINT
8X 0.72 [.028]
NOTES:
1. DIMENSIONING& TOLERANCINGPER ASME Y14.5M-1994.
2. CONT ROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO JEDECOUTLINE MS-012AA.
6.46 [.255]
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERINGTO
A SUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DAT E CODE (YWW)
P = DISGNATES LEAD - FREE
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF THE YEAR
WW = WEE K
A= ASSEMBLY SITE CODE
XXXX
F7101
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE
PART NUMBER
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
7
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IRF9362PbF-1
SO-8 Tape and Reel (Dimensions are shown in milimeters (inches))
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Qualification information†
Industrial
(per JEDEC JESD47F†† guidelines)
Qualification level
MS L 1
Moisture Sensitivity Level
RoHS compliant
SO-8
(per JEDEC J-S TD-020D††
Yes
)
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visithttp://www.irf.com/whoto-call/
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June 30, 2014
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