IRF9Z10 [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRF9Z10 |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总8页 (文件大小：365K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 90459A
IRF9Z10
D
S
D
G
TO-220AB
G
D
S
Gate
Drain
Source
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06/24/05
IRF9Z10
2
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IRF9Z10
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3
IRF9Z10
4
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IRF9Z10
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IRF9Z10
6
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IRF9Z10
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
+
-
-
+
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig -14 For N Channel HEXFETS
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7
IRF9Z10
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220ABPartMarkingInformation
EXAMPLE: T HIS IS AN IRF1010
LOT CODE 1789
AS S EMBLED ON WW 19, 1997
IN THE AS S EMBLY LINE "C"
PART NUMBER
INT ERNAT IONAL
RECT IFIER
LOGO
Note: "P" in assembly line
position indicates "Lead-Free"
DAT E CODE
YEAR 7 = 1997
WEEK 19
AS S EMBLY
LOT CODE
LINE C
TO-220AB packages are not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 06/05
8
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