IRFB13N50A [INFINEON]
Power MOSFET(Vdss=500V, Rds(on)max=0.450ohm, Id=14A); 功率MOSFET （ VDSS = 500V ， RDS（ON）最大值= 0.450ohm ，ID = 14A）
| 型号： | IRFB13N50A |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=500V, Rds(on)max=0.450ohm, Id=14A) |
| 文件： | 总8页 (文件大小：98K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94339
SMPS MOSFET
IRFB13N50A
HEXFET® Power MOSFET
Applications
VDSS
500V
RDS(on) max
ID
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
0.450 Ω
14A
Benefits
l Low Gate Charge Qg results in Simple Drive Requirement
l Improved Gate, Avalanche and Dynamicdv/dt Ruggedness
l Fully Characterized Capacitance and Avalanche Voltage
and Current
TO-220AB
Absolute Maximum Ratings
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Max.
14
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
9.1
A
56
PD @TC = 25°C
Power Dissipation
250
W
W/°C
V
Linear Derating Factor
2.0
VGS
dv/dt
TJ
Gate-to-Source Voltage
± 30
Peak Diode Recovery dv/dt
Operating Junction and
9.2
V/ns
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
300
10
°C
Mounting torqe, 6-32 or M3 screw
lbf•in (1.1N•m)
Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy
Typ.
Max.
560
14
Units
mJ
–––
–––
–––
IAR
Avalanche Current
A
EAR
Repetitive Avalanche Energy
25
mJ
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
0.50
–––
62
Units
RθJC
RθCS
RθJA
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.50
–––
°C/W
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1
12/10/01
IRFB13N50A
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
500 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.55 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 0.450
2.0 ––– 4.0
Ω
VGS = 10V, ID = 8.4A
V
VDS = VGS, ID = 250µA
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
V
DS = 500V, VGS = 0V
VDS = 400V, VGS = 0V, TJ = 125°C
GS = 30V
VGS = -30V
µA
nA
IDSS
IGSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
gfs
8.1 ––– –––
S
VDS = 50V, ID = 8.4A
ID = 14A
Qg
––– ––– 81
––– ––– 20
––– ––– 36
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 400V
VGS = 10V, See Fig. 6 and 13
–––
–––
–––
–––
15 –––
39 –––
39 –––
31 –––
VDD = 250V
ID = 14A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 7.5Ω
VGS = 10V,See Fig. 10
VGS = 0V
Ciss
Coss
Crss
Coss
Coss
Input Capacitance
––– 1910 –––
––– 290 –––
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
VDS = 25V
–––
––– 2730 –––
––– 82 –––
––– 160 –––
11 –––
pF
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 400V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 400V ꢀ
Coss eff.
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
D
IS
Continuous Source Current
(Body Diode)
MOSFET symbol
14
56
––– –––
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Reverse RecoveryCurrent
Forward Turn-On Time
––– ––– 1.5
––– 370 550
––– 4.4 6.5
V
TJ = 25°C, IS = 14A, VGS = 0V
TJ = 125°C, IF = 14A
ns
Qrr
iRRM
ton
µC di/dt = 100A/µs
––– 21
31
A
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. (See Fig. 11)
ꢀCoss eff. is a fixed capacitance that gives the same charging time
Starting TJ = 25°C, L = 5.7mH, RG = 25Ω,
as Coss while VDS is rising from 0 to 80% VDSS.
IAS = 14A, dv/dt = 7.6V/ns. (See Figure 12a)
ISD ≤ 14A, di/dt ≤ 250A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C.
,
2
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IRFB13N50A
100
100
10
1
VGS
15V
VGS
15V
10V
TOP
TOP
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10
BOTTOM
BOTTOM
4.5V
1
4.5V
0.1
20µs PULSE WIDTH
20µs PULSE WIDTH
°
°
T = 25
J
C
T = 150
J
C
0.01
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.0
100
14A
=
I
D
2.5
2.0
1.5
1.0
0.5
0.0
°
T = 150
C
J
10
°
C
T = 25
J
1
V
= 50V
DS
V
= 10V
GS
20µs PULSE WIDTH
0.1
-60 -40 -20
0
20
40
60
80
100 120 140 160
4
6
8
10
12 14
16
°
T , Junction Temperature
(
C)
V
, Gate-to-Source Voltage (V)
GS
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
vs. Temperature
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3
IRFB13N50A
12
10
7
100000
D
14A
=
I
V
= 0V,
f = 1 MHZ
GS
V
V
V
= 400V
= 250V
= 100V
DS
DS
DS
C
= C + C
,
C
SHORTED
iss
gs
gd
ds
C
= C
rss
gd
10000
1000
100
10
C
= C + C
oss
ds
gd
Ciss
Coss
Crss
5
2
1
0
0
12
Q
24
36
48
60
1
10
100
1000
, Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge vs.
Fig 5. Typical Capacitance vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
1
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100
10
1
°
T = 150
J
C
100µsec
1msec
°
C
T = 25
J
10msec
Tc = 25°C
Tj = 150°C
V
= 0 V
Single Pulse
GS
0.1
0.2
0.1
0.5
0.8
1.1
1.4
10
100
1000
10000
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-toSource Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRFB13N50A
15
12
9
RD
VDS
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6
Fig 10a. Switching Time Test Circuit
V
3
DS
90%
0
25
50
T
75
100
125
150
°
C)
, Case Temperature
(
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
0.01
0.01
t
1
t
2
Notes:
1. Duty factor D =
t
/ t
1
2
2. Peak T
= P
x
Z
+ T
J
DM
thJC
C
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFB13N50A
1150
I
D
TOP
6.3A
8.9A
14A
920
690
460
230
0
BOTTOM
1 5V
DRIVER
L
V
G
DS
D.U.T
AS
R
+
V
D D
-
I
A
20V
0.01
t
Ω
p
Fig 12c. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
( C)
Starting Tj, Junction Temperature
Fig 12a. Maximum Avalanche Energy
V
(BR)DSS
vs. Drain Current
t
p
I
AS
Fig 12d. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.2µF
12V
VGS
.3µF
Q
Q
GD
GS
+
V
DS
D.U.T.
-
V
V
GS
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Basic Gate Charge Waveform
Fig 13a. Gate Charge Test Circuit
6
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IRFB13N50A
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
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7
IRFB13N50A
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415 )
10.29 (.405 )
-
B
-
3.78 (.149)
3.54 (.139)
2.87 (.1 13)
2.62 (.1 03)
4 .69 (.18 5)
4 .20 (.16 5)
1.3 2 (.05 2)
1.2 2 (.04 8)
-
A
-
6.4 7 (.2 55)
6.1 0 (.2 40)
4
15 .24 (.60 0)
14 .84 (.58 4)
1.15 (.04 5)
M IN
LE A D A S S IG N M E N TS
1 - G A T E
1
2
3
2 - D R A IN
3 - S O U R C E
4 - D R A IN
1 4.09 (.5 55)
1 3.47 (.5 30)
4.06 (.160)
3.55 (.140)
0.93 (.0 37)
0.69 (.0 27)
0.55 (.02 2)
0.46 (.01 8)
3X
3 X
1 .40 (.05 5)
3 X
1 .15 (.04 5)
0.3 6 (.014 )
M
B
A
M
2.9 2 (.115 )
2.6 4 (.104 )
2 .54 (.10 0)
2X
N O TE S :
1
2
D IME N S IO N IN G
&
TO LE R A N C IN G P E R A N S I Y 14 .5 M , 1 982.
3
4
O U TL IN E C O N F O R MS TO JE D E C O U T LIN E T O -2 20A B .
C O N TR O LLIN G D IM E N S IO N : IN C H
H E A T S IN K
&
LE A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S .
TO-220AB Part Marking Information
EXAMPLE: THIS IS AN IRF1010
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE 1789
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
DATE CODE
YEAR 7 = 1997
WE E K 19
ASSEMBLY
LOT CODE
LINE C
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/01
8
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INFINEON
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