IRFB16N50KPBF [INFINEON]
Power Field-Effect Transistor, 17A I(D), 500V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3;
| 型号： | IRFB16N50KPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 17A I(D), 500V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 局域网 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：191K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95619
SMPS MOSFET
IRFB16N50KPbF
Applications
l
l
l
l
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency
Circuits
HEXFET® Power MOSFET
VDSS RDS(on) typ. ID
285m
500V
17A
l
Lead-Free
Benefits
l
l
l
l
Low Gate Charge Qg results in Simple Drive
Requirement
Improved Gate, Avalanche and Dynamicdv/dt
Ruggedness
Fully Characterized Capacitance and Avalanche
Voltage and Current
S
D
G
TO-220AB
Low RDS(on)
Absolute Maximum Ratings
Parameter
Max.
17
Units
A
I
I
I
@ T = 25°C
C
Continuous Drain Current, VGS @ 10V
D
D
@ T = 100°C
C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
11
68
DM
P
@T = 25°C
C
Power Dissipation
280
W
D
Linear Derating Factor
Gate-to-Source Voltage
2.3
± 30
W/°C
V
V
GS
dv/dt
Peak Diode Recovery dv/dt
Operating Junction and
11
V/ns
T
-55 to + 150
J
T
Storage Temperature Range
°C
STG
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
300 (1.6mm from case )
10 lbf in (1.1N m)
Avalanche Characteristics
Parameter
Typ.
–––
–––
–––
Max.
310
17
Units
mJ
A
Single Pulse Avalanche Energy
E
I
AS
AR
Avalanche Current
AR
Repetitive Avalanche Energy
E
28
mJ
Thermal Resistance
Parameter
Typ.
–––
Max.
0.44
–––
62
Units
°C/W
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.50
–––
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1
8/2/04
IRFB16N50KPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
V(BR)DSS
Drain-to-Source Breakdown Voltage
500
–––
0.58
285
–––
–––
–––
–––
–––
–––
V
∆
∆
V(BR)DSS/ TJ
Breakdown Voltage Temp. Coefficient –––
––– V/°C
RDS(on)
VGS(th)
IDSS
VGS = 10V, ID = 10A
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
3.0
350
5.0
Ω
V
m
VDS = VGS, ID = 250µA
VDS = 500V, VGS = 0V
Drain-to-Source Leakage Current
–––
–––
–––
–––
50
µA
nA
V
DS = 400V, VGS = 0V, TJ = 125°C
VGS = 30V
GS = -30V
250
100
-100
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 50V, ID = 10A
gfs
Qg
5.7
–––
–––
–––
–––
–––
–––
–––
–––
60
18
28
20
77
38
30
–––
S
ID = 17A
89
Qgs
Qgd
td(on)
tr
VDS = 400V
VGS = 10V
VDD = 250V
ID = 17A
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
27
nC
43
–––
–––
–––
–––
ns
td(off)
tf
RG = 8.8Ω
VGS = 10V
VGS = 0V
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Coss
Coss
Input Capacitance
––– 2210 –––
VDS = 25V
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
240
26
–––
–––
pF ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
––– 2620 –––
VGS = 0V, VDS = 400V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 400V
–––
–––
63
–––
–––
Coss eff.
120
Diode Characteristics
Parameter
Min. Typ. Max. Units Conditions
I
D
S
S
Continuous Source Current
–––
–––
17
A
MOSFET symbol
showing the
(Body Diode)
G
I
SM
Pulsed Source Current
(Body Diode)
–––
–––
68
A
integral reverse
p-n junction diode.
V
SD
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
–––
490
1.5
V
T = 25°C, I = 17A, V = 0V
J S GS
t
rr
730
ns
T = 25°C, I = 17A
J
F
Q
t
rr
––– 5710 8560
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
nC di/dt = 100A/µs
on
Notes:
ISD ≤ 17A, di/dt ≤ 500A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 2.2mH, RG = 25Ω,
IAS = 17A.
2
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IRFB16N50KPbF
100
10
1
100
10
1
VGS
15V
10V
8.0V
7.5V
7.0V
6.5V
6.0V
5.5V
VGS
15V
10V
8.0V
7.5V
7.0V
6.5V
6.0V
5.5V
TOP
TOP
BOTTOM
BOTTOM
5.5V
5.5V
60µs PULSE WIDTH
Tj = 150°C
60µs PULSE WIDTH
Tj = 25°C
0.1
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.0
I
= 17A
D
V
= 10V
GS
2.5
2.0
1.5
1.0
0.5
0.0
T
= 150°C
J
10
T
J
= 25°C
V
= 100V
DS
60µs PULSE WIDTH
1.0
4
5
6
7
8
9
10 11 12 13 14 15 16
-60 -40 -20
0
20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
vs. Temperature
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3
IRFB16N50KPbF
100000
12.0
10.0
8.0
V
= 0V,
= C
f = 1 MHZ
GS
I = 17A
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
V
V
V
= 400V
= 250V
= 100V
DS
DS
DS
= C
rss
oss
gd
10000
1000
100
10
= C + C
ds
gd
C
iss
6.0
C
oss
4.0
C
rss
2.0
1
0.0
1
10
100
1000
0
10
20
30
40
50
60
V
, Drain-to-Source Voltage (V)
Q
Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance vs.
Fig 6. Typical Gate Charge vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100.00
10.00
1.00
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 150°C
J
100µsec
T
= 25°C
J
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
1000
V
= 0V
GS
0.10
0.1
0.2
0.4
V
0.6
0.8
1.0
1.2
1.4
1.6
1
10
100
10000
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRFB16N50KPbF
RD
20
15
10
5
VDS
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
25
50
T
75
100
125
150
, Case Temperature (°C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFB16N50KPbF
600
I
D
TOP
7.6A
11A
500
15V
BOTTOM 17A
400
300
200
100
0
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
0.01
Ω
t
p
Fig 13a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
V
(BR)DSS
Fig 12. Maximum Avalanche Energy
t
p
vs. Drain Current
I
AS
Fig 13b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.2µF
12V
VGS
.3µF
Q
Q
GD
GS
+
V
DS
D.U.T.
-
V
V
GS
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 14b. Basic Gate Charge Waveform
Fig 14a. Gate Charge Test Circuit
6
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IRFB16N50KPbF
Peak Diode Recovery dv/dt Test Circuit
+
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 15. For N-Channel HEXFET® Power MOSFETs
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7
IRFB16N50KPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
3.78 (.149)
- B -
10.29 (.405)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
3.54 (.139)
1.32 (.052)
1.22 (.048)
- A -
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045)
MIN
HEXFET
IGBTs, CoPACK
2- DRAIN
3- SOURCE
1
2
3
1- GATE
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
4- DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1
2
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH
3
4
OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
E XAMPLE: T HIS IS AN IRF1010
LOT CODE 1789
PART NUMBER
AS S EMBLED ON WW 19, 1997
IN T HE AS S E MBLY LINE "C"
INT ERNAT IONAL
RE CT IFIER
LOGO
Note: "P" in assembly line
position indicates "Lead-Free"
DAT E CODE
YEAR 7 = 1997
WEEK 19
AS SE MBLY
LOT CODE
LINE C
TO-220AB package is not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/04
8
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