IRFB4110 [INFINEON]
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. ;
| 型号： | IRFB4110 |
| 厂家： | 
Infineon |
| 描述： | The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. |
| 文件： | 总10页 (文件大小：345K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRFB4110PbF
HEXFET® Power MOSFET
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
D
S
VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
ID (Package Limited)
100V
3.7m
4.5m
180A
Ω
Ω
l Hard Switched and High Frequency Circuits
G
120A
Benefits
l Improved Gate, Avalanche and Dynamic dv/dt
D
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
S
l Enhanced body diode dV/dt and dI/dt Capability
l Lead Free
D
G
l RoHS Compliant, Halogen-Free
TO-220AB
G
D
S
Gate
Drain
Source
Standard Pack
Base Part Number
Package Type
Orderable Part Number
Form
Quantity
IRFB4110PbF
TO-220
Tube
50
IRFB4110PbF
Absolute Maximum Ratings
Symbol
Parameter
Max.
180
130
120
670
370
2.5
Units
A
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
Pulsed Drain Current
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
W
Maximum Power Dissipation
Linear Derating Factor
W/°C
V
VGS
± 20
5.3
Gate-to-Source Voltage
Peak Diode Recovery
dv/dt
TJ
V/ns
-55 to + 175
°C
Operating Junction and
TSTG
Storage Temperature Range
300
Soldering Temperature, for 10 seconds
(1.6mm from case)
10lb in (1.1N m)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
Single Pulse Avalanche Energy
EAS (Thermally limited)
190
mJ
A
Avalanche Current
IAR
See Fig. 14, 15, 22a, 22b
Repetitive Avalanche Energy
EAR
mJ
Thermal Resistance
Symbol
Parameter
Typ.
–––
Max.
0.402
–––
Units
Rθ
JC
Junction-to-Case
RθCS
0.50
–––
°C/W
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
Rθ
JA
62
1
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IRFB4110PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Min. Typ. Max. Units
100 ––– –––
––– 0.108 ––– V/°C Reference to 25°C, ID = 5mA
Conditions
VGS = 0V, ID = 250µA
V
∆V(BR)DSS/∆TJ
RDS(on)
–––
2.0
3.7
4.5
4.0
20
VGS = 10V, ID = 75A
mΩ
V
VGS(th)
–––
VDS = VGS, ID = 250µA
IDSS
Drain-to-Source Leakage Current
––– –––
µA
VDS = 100V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 125°C
VGS = 20V
V
––– ––– 250
––– ––– 100
––– ––– -100
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
GS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 50V, ID = 75A
160 ––– –––
S
––– 150 210
nC ID = 75A
VDS = 50V
Qgs
Qgd
Gate-to-Source Charge
–––
–––
35
43
–––
–––
Gate-to-Drain ("Miller") Charge
VGS = 10V
RG
td(on)
tr
–––
–––
–––
–––
–––
Gate Resistance
Turn-On Delay Time
Rise Time
1.3
25
67
78
88
–––
–––
–––
–––
–––
Ω
ns VDD = 65V
ID = 75A
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 2.6Ω
VGS = 10V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 9620 –––
––– 670 –––
––– 250 –––
––– 820 –––
––– 950 –––
pF
V
GS = 0V
VDS = 50V
ƒ = 1.0MHz
Coss eff. (ER)
V
GS = 0V, VDS = 0V to 80V
GS = 0V, VDS = 0V to 80V
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
Coss eff. (TR)
V
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
IS
D
S
Continuous Source Current
––– –––
A
170
(Body Diode)
Pulsed Source Current
(Body Diode)
showing the
integral reverse
G
ISM
––– ––– 670
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
––– –––
1.3
75
V
TJ = 25°C, IS = 75A, VGS = 0V
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VR = 85V,
IF = 75A
di/dt = 100A/µs
–––
–––
–––
50
60
94
ns
90
Qrr
Reverse Recovery Charge
140
nC
––– 140 210
––– 3.5 –––
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
A
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 120A. Note that current
limitations arising from heating of the device leads may occur with
ISD ≤ 75A, di/dt ≤ 630A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
ꢀ Pulse width ≤ 400µs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
.
some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.033mH
RG = 25Ω, IAS = 108A, VGS =10V. Part not recommended for use
above this value.
.
Rθ is measured at TJ approximately 90°C.
2
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IRFB4110PbF
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
TOP
TOP
BOTTOM
BOTTOM
4.5V
4.5V
60µs PULSE WIDTH
Tj = 175°C
60µs PULSE WIDTH
Tj = 25°C
≤
≤
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
3.0
2.5
2.0
1.5
1.0
0.5
I
= 75A
D
V
= 10V
GS
T
= 25°C
J
T
= 175°C
J
1
V
= 25V
DS
≤60µs PULSE WIDTH
0.1
1
2
3
4
5
6
7
-60 -40 -20 0 20 40 60 80 100120140160180
, Junction Temperature (°C)
T
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
100000
10000
1000
12.0
V
= 0V,
= C
f = 1 MHZ
GS
I = 75A
D
C
C
C
+ C , C
SHORTED
ds
iss
gs
gd
= C
10.0
rss
oss
gd
= C + C
V
= 80V
= 50V
ds
gd
DS
V
DS
C
8.0
6.0
4.0
2.0
0.0
iss
C
oss
C
rss
100
1
10
, Drain-to-Source Voltage (V)
100
0
50
100
150
200
V
Q , Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
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Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
3
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IRFB4110PbF
10000
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
T
= 175°C
J
T
= 25°C
100µsec
J
1msec
1
1
10msec
DC
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
V
= 0V
GS
0.01
0.1
0.1
1
10
100
1000
0.0
0.5
1.0
1.5
2.0
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
180
125
120
115
110
105
100
95
Id = 5mA
160
Limited By Package
140
120
100
80
60
40
20
0
90
25
50
75
100
125
150
175
-60 -40 -20 0 20 40 60 80 100120140160180
T
, Case Temperature (°C)
T
, Temperature ( °C )
C
J
Fig 10. Drain-to-Source Breakdown Voltage
Fig 9. Maximum Drain Current vs. Case Temperature
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
800
I
D
700
600
500
400
300
200
100
0
TOP
17A
27A
BOTTOM 108A
0
20
V
40
60
80
100
120
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
Drain-to-Source Voltage (V)
DS,
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
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Fig 11. Typical COSS Stored Energy
4
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IRFB4110PbF
1
0.1
D = 0.50
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
τ
0.02
0.01
i (sec)
Ri (°C/W)
0.01
τ
J τJ
τ
τ
CτC
0.09876251 0.000111
0.2066697 0.001743
0.09510464 0.012269
τ
1 τ1
τ
2 τ2
3 τ3
Ci= τi/Ri
Ci= τi/Ri
0.001
0.0001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
10
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
∆
0.01
Tstart =25°C (Single Pulse)
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tstart = 150°C.
j = 25°C and
∆Τ
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
250
200
150
100
50
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
TOP
BOTTOM 1.0% Duty Cycle
= 108A
Single Pulse
I
D
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
0
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
25
50
75
100
125
150
175
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Starting T , Junction Temperature (°C)
J
Fig 15. Maximum Avalanche Energy vs. Temperature
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IRFB4110PbF
25
20
15
10
5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
I = 30A
F
V
= 85V
R
T = 25°C
J
T = 125°C
J
I
I
I
= 250µA
= 1.0mA
= 1.0A
D
D
D
0
0
200
400
600
800
1000
-75 -50 -25
0
25 50 75 100 125 150175 200
, Temperature ( °C )
di /dt (A/µs)
T
F
J
Fig. 17 - Typical Recovery Current vs. dif/dt
Fig 16. Threshold Voltage vs. Temperature
560
25
I = 30A
I = 45A
F
F
V
= 85V
V
= 85V
R
480
400
320
240
160
80
R
20
15
10
5
T = 25°C
T = 25°C
J
J
T = 125°C
J
T = 125°C
J
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di /dt (A/µs)
di /dt (A/µs)
F
F
Fig. 18 - Typical Recovery Current vs. dif/dt
Fig. 19 - Typical Stored Charge vs. dif/dt
560
I = 45A
F
V
= 85V
R
480
400
320
240
160
80
T = 25°C
J
T = 125°C
J
0
200
400
600
800
1000
di /dt (A/µs)
F
Fig. 20 - Typical Stored Charge vs. dif/dt
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IRFB4110PbF
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Current
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 20. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
2
GS
Ω
0.01
t
p
I
AS
Fig 21b. Unclamped Inductive Waveforms
Fig 21a. Unclamped Inductive Test Circuit
LD
VDS
VDS
90%
+
-
VDD
10%
VGS
D.U.T
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
td(on)
td(off)
tr
tf
Fig 22a. Switching Time Test Circuit
Fig 22b. Switching Time Waveforms
Id
Vds
Vgs
L
VCC
DUT
Vgs(th)
0
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 23a. Gate Charge Test Circuit
Fig 23b. Gate Charge Waveform
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IRFB4110PbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
INTERNATIONAL
RECTIFIER LOGO
INTERNATIONAL
RECTIFIER LOGO
PART NUMBER
PART NUMBER
DATE CODE
P = LEAD-FREE
Y = LAST DIGIT OF YEAR
WW = WORK WEEK
? = ASSEMBLY SITE CODE
IRFB4110
IRFB4110
DATE CODE
OR
ASSEMBLY
LOT CODE
ASSEMBLY
LOT CODE
Y = LAST DIGIT OF YEAR
WW = WORK WEEK
P = LEAD-FREE
PYWW?
YWWP
LC
LC
LC
LC
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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IRFB4110PbF
Qualification information†
Industrial†
(per JEDEC JESD47F†† guidelines)
Qualification level
Moisture Sensitivity Level
RoHS compliant
TO-220
N/A
Yes
Qualification standards can be found at International Rectifiers web site: http://www.irf.com/product-info/reliability/
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
Comment
Updated data sheet with new IR corporate template.
• Updated package outline & part marking on page 8.
•
4/28/2014
•
Added bullet point in the Benefits "RoHS Compliant, Halogen -Free" on page 1.
• Updated typo on the Fig.19 and Fig.20, unit of Y-axis from "A" to "nC" on page 6.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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IMPORTANT NOTICE
The information given in this document shall in no For further information on the product, technology,
event be regarded as a guarantee of conditions or delivery terms and conditions and prices please
characteristics (“Beschaffenheitsgarantie”) .
contact your nearest Infineon Technologies office
(www.infineon.com).
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
相关型号：
IRFB4127
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
INFINEON
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