IRFB52N15DPBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRFB52N15DPBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总12页 (文件大小：342K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97002
IRFB52N15DPbF
IRFS52N15DPbF
PROVISIONAL
SMPS MOSFET
IRFSL52N15DPbF
HEXFET® Power MOSFET
Applications
Key Parameters
l High frequency DC-DC converters
l Plasma Display Panel
l Lead-Free
VDS
150
200
32
V
V
m
V
R
DS (Avalanche) min.
DS(ON) max @ 10V
Benefits
TJ max
175
°C
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
D2Pak
IRFS52N15DPbF IRFSL52N15DPbF
TO-262
TO-220AB
IRFB52N15DPbF
Absolute Maximum Ratings
Parameter
Max.
51*
36*
Units
A
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
240
PD @TA = 25°C
PD @TC = 25°C
Power Dissipation
3.8
W
Power Dissipation
230*
Linear Derating Factor
1.5*
W/°C
V
VGS
dv/dt
TJ
Gate-to-Source Voltage
± 30
Peak Diode Recovery dv/dt
Operating Junction and
5.5
V/ns
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
Units
RθJC
RθCS
RθJA
RθJA
0.47*
–––
62
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.50
–––
°C/W
Junction-to-Ambient
–––
40
* RθJC (end of life) for D2Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.
Notes through are on page 11
www.irf.com
1
05/17/05
PROVISIONAL
IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
150 ––– –––
––– 0.16 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 32 mΩ VGS = 10V, ID = 36A
3.0 ––– 5.0
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
V
VDS = VGS, ID = 250µA
VDS = 150V, VGS = 0V
VDS = 120V, VGS = 0V, TJ = 150°C
VGS = 30V
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
IDSS
Drain-to-Source Leakage Current
µA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
IGSS
nA
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
gfs
19
––– –––
S
VDS = 50V, ID = 36A
ID = 36A
Qg
–––
–––
–––
–––
–––
–––
–––
60
18
28
89
27
42
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 75V
VGS = 10V,
16 –––
47 –––
28 –––
25 –––
VDD = 75V
ID = 36A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 2.5Ω
VGS = 10V
Ciss
Coss
Crss
Coss
Coss
Input Capacitance
––– 2770 –––
––– 590 –––
––– 110 –––
––– 3940 –––
––– 260 –––
––– 550 –––
VGS = 0V
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
VDS = 25V
pF
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 120V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 120V ꢀ
Coss eff.
Avalanche Characteristics
Parameter
Min.
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy
Avalanche Current
–––
–––
–––
200
–––
–––
450
–––
470
36
mJ
A
IAR
EAR
Repetitive Avalanche Energy
Repetitive Avalanche Voltage
–––
–––
mJ
V
VDS (Avalanche)
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
S
IS
Continuous Source Current
(Body Diode)
MOSFET symbol
showing the
60
––– –––
––– –––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
240
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.5
––– 140 210
V
TJ = 25°C, IS = 36A, VGS = 0V
nS
TJ = 25°C, IF = 36A
Qrr
ton
––– 780 1170 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
www.irf.com
PROVISIONAL
IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF
1000
100
10
1000
VGS
VGS
15V
12V
TOP
TOP
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
10V
8.0V
7.0V
6.0V
5.5V
100
10
1
BOTTOM 5.0V
BOTTOM 5.0V
5.0V
5.0V
1
300µs PULSE WIDTH
Tj = 175°C
300µs PULSE WIDTH
Tj = 25°C
0.1
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.0
1000.00
60A
=
I
D
2.5
2.0
1.5
1.0
0.5
0.0
100.00
10.00
1.00
T
= 175°C
J
T
= 25°C
J
V
= 15V
DS
300µs PULSE WIDTH
V
= 10V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
5.0
7.0
9.0
11.0
13.0
15.0
T , Junction Temperature
( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
www.irf.com
3
PROVISIONAL
IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF
12
10
8
100000
10000
1000
100
V
C
= 0V,
f = 1 MHZ
I
= 36A
GS
D
= C + C
,
C
SHORTED
iss
gs
gd
ds
V
V
= 120V
= 75V
DS
DS
C
= C
rss
gd
C
= C + C
oss
ds gd
Ciss
6
Coss
Crss
4
2
0
10
0
10
20
30
40
50
60
70
1
10
100
1000
Q
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
1000.00
100.00
10.00
1.00
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
J
100µsec
1msec
T
= 25°C
J
10msec
1
Tc = 25°C
V
= 0V
Tj = 175°C
Single Pulse
GS
0.10
0.1
0.0
0.5
1.0
1.5
2.0
2.5
1
10
100
1000
V
, Source-toDrain Voltage (V)
V
, Drain-toSource Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
www.irf.com
PROVISIONAL
IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF
70
60
50
40
30
20
10
0
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
C)
175
°
(
T
, Case Temperature
10%
C
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
SINGLE PULSE
(THERMAL RESPONSE)
0.02
0.01
P
DM
0.01
t
1
t
2
Notes:
1. Duty factor D =
t / t
1
2
2. Peak T
= P
x Z
+ T
J
DM
thJC
C
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
PROVISIONAL
IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF
900
15V
I
D
TOP
15A
26A
36A
720
540
360
180
0
DRIVER
+
BOTTOM
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
°
150
175
Starting Tj, Junction Temperature
( C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.2µF
12V
10 V
.3µF
Q
Q
GD
GS
+
V
DS
D.U.T.
-
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
www.irf.com
PROVISIONAL
IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF
Peak Diode Recovery dv/dt Test Circuit
+
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
www.irf.com
7
PROVISIONAL
IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
8
www.irf.com
PROVISIONAL
IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
www.irf.com
9
PROVISIONAL
IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
IGBT
1- GATE
TO-262 Part Marking Information
10
www.irf.com
PROVISIONAL
IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF
D2Pak Tape & Reel Information
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Notes:
1% Duty cycle, 100 pulses, limited by
max. junction temperature.
Starting TJ = 25°C, L = 0.72mH
RG = 25Ω, IAS = 36A.
ꢀ Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
.
This is only applied to TO-220AB package.
This is applied to D2Pak, when mounted on 1" square PCB
(FR-4 or G-10 Material ). For recommended footprint and soldering
techniques refer to application note #AN-994.
ISD ≤ 36A, di/dt ≤ 400A/µs, VDD ≤ V(BR)DSS
,
TJ ≤ 175°C.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
TO-220 package is not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] (IRFB52N15DPbF),
& Industrial (IRFS52N15DPbF/IRFSL52N15DPbF) market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.05/05
www.irf.com
11
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
相关型号：
IRFB5615
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
INFINEON
IRFB5620
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
INFINEON
IRFB7430
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
INFINEON
©2020 ICPDF网 联系我们和版权申明