IRFB5620 [INFINEON]
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.;
| 型号： | IRFB5620 |
| 厂家： | 
Infineon |
| 描述： | The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. |
| 文件： | 总8页 (文件大小：277K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96174
DIGITAL AUDIO MOSFET
IRFB5620PbF
Features
Key Parameters
• Key Parameters Optimized for Class-D Audio
Amplifier Applications
VDS
200
V
m
RDS(ON) typ. @ 10V
Qg typ.
60
• Low RDSON for Improved Efficiency
• Low QG and QSW for Better THD and Improved
Efficiency
25
nC
nC
Ω
Qsw typ.
9.8
2.6
175
RG(int) typ.
TJ max
°C
• Low QRR for Better THD and Lower EMI
• 175°C Operating Junction Temperature for
Ruggedness
D
S
D
• Can Deliver up to 300W per Channel into 8Ω Load in
Half-Bridge Configuration Amplifier
G
S
D
G
TO-220AB
G
D
S
Gate
Drain
Source
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes
thelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.Furthermore,Gatecharge,body-diode
reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance
factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction
temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,
robust and reliable device for ClassD audio amplifier applications.
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Max.
200
±20
25
Units
VDS
V
VGS
Gate-to-Source Voltage
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
18
A
100
144
72
Power Dissipation
PD @TC = 25°C
PD @TC = 100°C
W
Power Dissipation
Linear Derating Factor
0.96
W/°C
TJ
Operating Junction and
Storage Temperature Range
-55 to + 175
TSTG
°C
Soldering Temperature, for 10 seconds
(1.6mm from case)
300
10lb in (1.1N m)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
1.045
–––
Units
Junction-to-Case
RθJC
–––
0.50
–––
Rθ
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
CS
RθJA
62
Notes through ꢀare on page 2
www.irf.com
1
09/05/08
IRFB5620PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
200
–––
–––
3.0
–––
0.22
60
–––
–––
72.5
5.0
V
∆ΒVDSS/∆TJ
RDS(on)
V/°C Reference to 25°C, ID = 1mA
mΩ
VGS = 10V, ID = 15A
VGS(th)
–––
-14
–––
–––
–––
–––
–––
25
V
VDS = VGS, ID = 100µA
V
/ T
∆
J
∆
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
37
––– mV/°C
GS(th)
IDSS
20
µA
VDS = 200V, VGS = 0V
250
VDS = 200V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
nA
VGS = 20V
-100
VGS = -20V
gfs
Qg
–––
38
S
VDS = 50V, ID = 15A
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Qgs1
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
6.3
–––
–––
–––
–––
–––
5.0
VDS = 100V
VGS = 10V
Qgs2
Qgd
1.9
nC
7.9
ID = 15A
Qgodr
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Internal Gate Resistance
Turn-On Delay Time
9.3
See Fig. 6 and 19
Qsw
9.8
RG(int)
td(on)
tr
2.6
Ω
8.6
–––
–––
–––
–––
VDD = 100V, VGS = 10V
Rise Time
14.6
17.1
9.9
ID = 15A
ns
td(off)
tf
Turn-Off Delay Time
R = 2.4
Ω
G
Fall Time
Ciss
Coss
Crss
Coss
LD
Input Capacitance
––– 1710 –––
VGS = 0V
Output Capacitance
–––
–––
–––
125
30
–––
–––
–––
VDS = 50V
ƒ = 1.0MHz,
pF
nH
Reverse Transfer Capacitance
Effective Output Capacitance
Internal Drain Inductance
See Fig.5
138
VGS = 0V, VDS = 0V to 160V
Between lead,
D
S
–––
–––
4.5
7.5
–––
–––
6mm (0.25in.)
from package
G
LS
Internal Source Inductance
and center of die contact
Avalanche Characteristics
Parameter
Typ.
Max.
Units
Single Pulse Avalanche Energy
EAS
IAR
–––
113
mJ
A
Avalanche Current
See Fig. 14, 15, 17a, 17b
Repetitive Avalanche Energy
EAR
mJ
Diode Characteristics
Parameter
Continuous Source Current
Min. Typ. Max. Units
Conditions
MOSFET symbol
IS @ TC = 25°C
ISM
–––
–––
25
(Body Diode)
showing the
A
Pulsed Source Current
(Body Diode)
integral reverse
–––
–––
100
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
98
1.3
147
737
V
TJ = 25°C, IS = 15A, VGS = 0V
ns TJ = 25°C, IF = 15A , VR = 160V
di/dt = 100A/µs
nC
Qrr
491
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 1.00mH, RG = 25Ω, IAS = 15A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
R is measured at TJ of approximately 90°C.
ꢀ Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive
avalanche information
θ
2
www.irf.com
IRFB5620PbF
1000
100
10
1000
100
10
VGS
15V
12V
VGS
15V
12V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
BOTTOM
5.0V
1
5.0V
1
0.1
0.01
60µs PULSE WIDTH
Tj = 25°C
≤
60µs PULSE WIDTH
Tj = 175°C
≤
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
3.5
3.0
2.5
2.0
1.5
1.0
0.5
I
= 15A
D
V
= 10V
GS
100
10
1
T = 175°C
J
T
= 25°C
J
V
= 50V
DS
≤
60µs PULSE WIDTH
0.1
2
4
6
8
10 12 14 16
-60 -40 -20 0 20 40 60 80 100120140160180
, Junction Temperature (°C)
T
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
14.0
100000
10000
1000
100
V
= 0V,
= C
f = 1 MHZ
GS
I = 15A
D
C
C
C
+ C , C
SHORTED
ds
iss
gs
gd
V
V
= 160V
= 100V
12.0
10.0
8.0
DS
DS
= C
rss
oss
gd
= C + C
ds
gd
VDS= 40V
C
iss
6.0
C
oss
4.0
C
rss
2.0
0.0
10
0
5
10
15
20
25
30
35
1
10
100
1000
Q , Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
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3
IRFB5620PbF
100
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100µsec
1msec
T = 175°C
J
T
= 25°C
J
10
10msec
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
1.4
GS
1.0
0.1
0.2
0.4
V
0.6
0.8
1.0
1.2
1.6
1
10
100
1000
, Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
SD
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
30
25
20
15
10
5
I
I
= 100µA
= 250uA
D
D
ID = 1.0mA
ID = 1.0A
0
-75 -50 -25
0
25 50 75 100 125 150 175
25
50
75
100
125
150
175
T
, Temperature ( °C )
T
, Case Temperature (°C)
J
C
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10. Threshold Voltage vs. Temperature
10
1
D = 0.50
0.20
0.10
0.1
R1
R1
R2
Ri (°C/W) τi (sec)
R2
0.05
τ
J τJ
τ
τ
0.456
0.000311
Cτ
0.02
0.01
1 τ1
Ci= τi/Ri
τ
2τ2
0.589
0.003759
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
www.irf.com
IRFB5620PbF
0.5
0.4
0.3
0.2
0.1
0
500
450
400
350
300
250
200
150
100
50
I
I
= 15A
D
D
TOP
2.05A
2.94A
BOTTOM 15A
T
= 125°C
J
T
= 25°C
12
J
0
4
6
8
10
14
16
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
V
Gate -to -Source Voltage (V)
GS,
Fig 12. On-Resistance Vs. Gate Voltage
Fig 13. Maximum Avalanche Energy Vs. Drain Current
100
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Tj = 150°C and
Tstart =25°C (Single Pulse)
0.01
10
1
0.05
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τj = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current Vs.Pulsewidth
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
120
100
80
60
40
20
0
TOP
BOTTOM 1.0% Duty Cycle
= 15A
Single Pulse
I
D
2. Safe operation in Avalanche is allowed as long as neither
Tjmax nor Iav (max) is exceeded
3. Equation below based on circuit and waveforms shown in
Figures 17a, 17b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
25
50
75
100
125
150
175
P
D (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Starting T , Junction Temperature (°C)
J
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy Vs. Temperature
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5
IRFB5620PbF
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
CircuitLayoutConsiderations
• LowStrayInductance
• Ground Plane
• LowLeakageInductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dtcontrolledbyRG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
InductorCurrent
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
Ω
0.01
t
p
I
AS
Fig 17b. Unclamped Inductive Waveforms
Fig 17a. Unclamped Inductive Test Circuit
RD
VDS
V
DS
90%
VGS
D.U.T.
RG
+
VDD
-
VGS
10%
PulseWidth ≤ 1 µs
Duty Factor≤ 0.1 %
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
Id
Current Regulator
Same Type as D.U.T.
Vds
Vgs
50KΩ
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
Vgs(th)
V
GS
3mA
I
I
D
G
Qgs1
Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 19a. Gate Charge Test Circuit
Fig 19b. Gate Charge Waveform
6
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IRFB5620PbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 09/2008
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7
IMPORTANT NOTICE
The information given in this document shall in no For further information on the product, technology,
event be regarded as a guarantee of conditions or delivery terms and conditions and prices please
characteristics (“Beschaffenheitsgarantie”) .
contact your nearest Infineon Technologies office
(www.infineon.com).
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
相关型号：
IRFB7430
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
INFINEON
IRFB7434
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
INFINEON
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