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IRFB61N15D [INFINEON]

Power MOSFET(Vdss=150V, Rds(on)max=0.032ohm, Id=50A); 功率MOSFET （ VDSS = 150V ， RDS（ON）最大值= 0.032ohm ，ID = 50A ）
IRFB61N15D
型号： IRFB61N15D
厂家： Infineon    Infineon
描述：

Power MOSFET(Vdss=150V, Rds(on)max=0.032ohm, Id=50A)
功率MOSFET （ VDSS = 150V ， RDS（ON）最大值= 0.032ohm ，ID = 50A ）
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中文：  中文翻译
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PD- 94207  
SMPS MOSFET  
IRFB61N15D  
HEXFET® Power MOSFET  
Applications  
l High frequency DC-DC converters  
l Motor Control  
VDSS  
150V  
RDS(on) max  
ID  
60A  
0.032Ω  
l Uninterrutible Power Supplies  
Benefits  
l Low Gate-to-Drain Charge to Reduce  
Switching Losses  
l Fully Characterized Capacitance Including  
Effective COSS to Simplify Design, (See  
App. Note AN1001)  
l Fully Characterized Avalanche Voltage  
and Current  
TO-220AB  
Absolute Maximum Ratings  
Parameter  
Max.  
60  
Units  
A
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
42  
250  
PD @TA = 25°C  
PD @TC = 25°C  
Power Dissipation  
2.4  
W
Power Dissipation  
330  
Linear Derating Factor  
2.2  
W/°C  
V
VGS  
dv/dt  
TJ  
Gate-to-Source Voltage  
± 30  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
3.7  
V/ns  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting torqe, 6-32 or M3 screw†  
°C  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
Max.  
0.45  
–––  
62  
Units  
RθJC  
RθCS  
RθJA  
–––  
0.50  
–––  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
°C/W  
Notes  through ꢀ are on page 8  
www.irf.com  
1
5/3/01  
IRFB61N15D  
Static @ TJ = 25°C (unless otherwise specified)  
Parameter  
Min. Typ. Max. Units  
150 ––– –––  
––– 0.18 ––– V/°C Reference to 25°C, ID = 1mA  
Conditions  
V(BR)DSS  
Drain-to-Source Breakdown Voltage  
V
VGS = 0V, ID = 250µA  
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient  
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.032  
VGS(th)  
Ω
VGS = 10V, ID = 36A „  
VDS = VGS, ID = 250µA  
VDS = 150V, VGS = 0V  
VDS = 120V, VGS = 0V, TJ = 150°C  
VGS = 30V  
Gate Threshold Voltage  
3.0  
––– 5.5  
V
––– ––– 25  
––– ––– 250  
––– ––– 100  
––– ––– -100  
IDSS  
Drain-to-Source Leakage Current  
µA  
nA  
Gate-to-Source Forward Leakage  
Gate-to-Source Reverse Leakage  
IGSS  
VGS = -30V  
Dynamic @ TJ = 25°C (unless otherwise specified)  
Parameter  
Forward Transconductance  
Total Gate Charge  
Min. Typ. Max. Units  
Conditions  
VDS = 50V, ID = 37A  
ID = 37A  
gfs  
22  
––– –––  
S
Qg  
–––  
–––  
–––  
–––  
95  
26  
45  
140  
39  
Qgs  
Qgd  
td(on)  
tr  
Gate-to-Source Charge  
Gate-to-Drain ("Miller") Charge  
Turn-On Delay Time  
Rise Time  
nC VDS = 120V  
VGS = 10V,  
68  
18 –––  
VDD = 75V  
––– 110 –––  
ID = 37A  
ns  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
–––  
–––  
28 –––  
51 –––  
RG = 1.8Ω  
VGS = 10V „  
VGS = 0V  
Ciss  
Coss  
Crss  
Coss  
Coss  
Coss eff.  
Input Capacitance  
––– 3470 –––  
––– 690 –––  
––– 150 –––  
––– 4600 –––  
––– 310 –––  
––– 580 –––  
Output Capacitance  
Reverse Transfer Capacitance  
Output Capacitance  
Output Capacitance  
Effective Output Capacitance  
VDS = 25V  
pF  
ƒ = 1.0MHz  
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz  
VGS = 0V, VDS = 120V, ƒ = 1.0MHz  
VGS = 0V, VDS = 0V to 120V ꢀ  
Avalanche Characteristics  
Parameter  
Single Pulse Avalanche Energy‚  
Typ.  
–––  
–––  
–––  
Max.  
520  
37  
Units  
mJ  
EAS  
IAR  
Avalanche Current  
A
EAR  
Repetitive Avalanche Energy  
33  
mJ  
Diode Characteristics  
Parameter  
Min. Typ. Max. Units  
Conditions  
D
IS  
Continuous Source Current  
(Body Diode)  
MOSFET symbol  
60  
––– –––  
––– –––  
showing the  
A
G
ISM  
Pulsed Source Current  
(Body Diode)   
integral reverse  
p-n junction diode.  
250  
S
VSD  
trr  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse RecoveryCharge  
Forward Turn-On Time  
––– ––– 1.3  
––– 180 270  
V
TJ = 25°C, IS = 37A, VGS = 0V „  
ns  
TJ = 25°C, IF = 37A  
Qrr  
ton  
––– 1340 2010 nC di/dt = 100A/µs „  
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  
2
www.irf.com  
IRFB61N15D  
1000  
100  
10  
1000  
100  
10  
VGS  
15V  
VGS  
15V  
TOP  
TOP  
10V  
10V  
8.0V  
7.0V  
6.0V  
5.5V  
5.0V  
8.0V  
7.0V  
6.0V  
5.5V  
5.0V  
BOTTOM 4.5V  
BOTTOM4.5V  
1
4.5V  
1
0.1  
4.5V  
20µs PULSE WIDTH  
20µs PULSE WIDTH  
°
°
T = 175 C  
J
T = 25 C  
J
0.1  
0.1  
0.01  
1
10  
100  
0.1  
1
10  
100  
V
, Drain-to-Source Voltage (V)  
V
, Drain-to-Source Voltage (V)  
DS  
DS  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
3.5  
1000  
62A  
=
I
D
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
100  
10  
°
T = 175 C  
J
1
°
T = 25 C  
J
0.1  
0.01  
V
= 25V  
DS  
V
= 10V  
20µs PULSE WIDTH  
GS  
4
6
8
10 12  
-60 -40 -20  
0
20 40 60 80 100 120 140 160 180  
°
V
, Gate-to-Source Voltage (V)  
T , Junction Temperature ( C)  
J
GS  
Fig 3. Typical Transfer Characteristics  
Fig 4. Normalized On-Resistance  
Vs. Temperature  
www.irf.com  
3
IRFB61N15D  
20  
16  
12  
8
100000  
I
D
= 37A  
V
= 0V,  
f = 1 MHZ  
GS  
V
V
V
= 120V  
= 75V  
= 30V  
DS  
DS  
DS  
C
= C + C  
,
C
ds  
SHORTED  
iss  
gs  
gd  
C
= C  
rss  
gd  
C
= C + C  
oss  
ds  
gd  
10000  
1000  
100  
Ciss  
Coss  
Crss  
4
FOR TEST CIRCUIT  
SEE FIGURE 13  
10  
0
1
10  
100  
1000  
0
20  
40  
60  
80  
100  
120  
140  
Q
, Total Gate Charge (nC)  
V
, Drain-to-Source Voltage (V)  
G
DS  
Fig 6. Typical Gate Charge Vs.  
Fig 5. Typical Capacitance Vs.  
Gate-to-Source Voltage  
Drain-to-Source Voltage  
1000  
100  
10  
1000  
100  
10  
OPERATION IN THIS AREA  
LIMITED BY R  
(on)  
DS  
°
T = 175 C  
J
100µsec  
1msec  
1
1
10msec  
°
T = 25 C  
J
Tc = 25°C  
Tj = 175°C  
Single Pulse  
V
= 0 V  
GS  
1.2  
0.1  
0.1  
0.2  
0.4  
V
0.6  
0.8  
1.0  
1.4  
1
10  
100  
1000  
,Source-to-Drain Voltage (V)  
SD  
V
, Drain-toSource Voltage (V)  
DS  
Fig 8. Maximum Safe Operating Area  
Fig 7. Typical Source-Drain Diode  
Forward Voltage  
4
www.irf.com  
IRFB61N15D  
RD  
60  
50  
40  
30  
20  
10  
0
VDS  
VGS  
10V  
D.U.T.  
RG  
+VDD  
-
Pulse Width ≤ 1 µs  
Duty Factor ≤ 0.1 %  
Fig 10a. Switching Time Test Circuit  
V
DS  
90%  
25  
50  
75  
100  
125  
150  
175  
°
( C)  
T
, Case Temperature  
C
10%  
V
GS  
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.  
d(on)  
d(off)  
Case Temperature  
Fig 10b. Switching Time Waveforms  
1
D = 0.50  
0.20  
0.1  
0.10  
0.05  
0.02  
0.01  
SINGLE PULSE  
(THERMAL RESPONSE)  
P
DM  
0.01  
t
1
t
2
Notes:  
1. Duty factor D =  
t / t  
1 2  
2. Peak T = P  
x Z  
+ T  
thJC C  
J
DM  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
t , Rectangular Pulse Duration (sec)  
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case  
www.irf.com  
5
IRFB61N15D  
1200  
1000  
800  
600  
400  
200  
0
I
15V  
D
TOP  
15A  
26A  
37A  
BOTTOM  
DR IV ER  
L
V
D S  
D.U .T  
R
+
G
V
D D  
-
I
A
A S  
VGS  
0.01  
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit  
V
(BR)DSS  
t
p
25  
50  
75  
100  
125  
150  
175  
°
Starting T , Junction Temperature ( C)  
J
Fig 12c. Maximum Avalanche Energy  
Vs. Drain Current  
I
AS  
Fig 12b. Unclamped Inductive Waveforms  
Current Regulator  
Same Type as D.U.T.  
Q
G
50KΩ  
.2µF  
12V  
10 V  
.3µF  
Q
Q
GD  
GS  
+
V
DS  
D.U.T.  
-
V
GS  
V
G
3mA  
I
I
D
G
Charge  
Current Sampling Resistors  
Fig 13a. Basic Gate Charge Waveform  
Fig 13b. Gate Charge Test Circuit  
6
www.irf.com  
IRFB61N15D  
Peak Diode Recovery dv/dt Test Circuit  
+
Circuit Layout Considerations  
• Low Stray Inductance  
• Ground Plane  
• Low Leakage Inductance  
Current Transformer  
D.U.T  
ƒ
-
+
‚
-
„
-
+

RG  
• dv/dt controlled by RG  
+
-
• Driver same type as D.U.T.  
• ISD controlled by Duty Factor "D"  
• D.U.T. - Device Under Test  
VDD  
Driver Gate Drive  
P.W.  
P.W.  
Period  
Period  
D =  
V
=10V  
*
GS  
D.U.T. I Waveform  
SD  
Reverse  
Recovery  
Current  
Body Diode Forward  
Current  
di/dt  
D.U.T. V Waveform  
DS  
Diode Recovery  
dv/dt  
V
DD  
Re-Applied  
Voltage  
Body Diode  
Forward Drop  
Inductor Curent  
I
SD  
Ripple ≤ 5%  
* VGS = 5V for Logic Level Devices  
Fig 14. For N-Channel HEXFET® Power MOSFETs  
www.irf.com  
7
IRFB61N15D  
TO-220AB Package Outline  
Dimensions are shown in millimeters (inches)  
10.54 (.415)  
- B -  
3.78 (.149)  
10.29 (.405)  
2.87 (.113)  
2.62 (.103)  
4.69 (.185)  
4.20 (.165)  
3.54 (.139)  
1.32 (.052)  
1.22 (.048)  
- A -  
6.47 (.255)  
6.10 (.240)  
4
15.24 (.600)  
14.84 (.584)  
1.15 (.045)  
MIN  
LEAD ASSIG NMENTS  
1 - G ATE  
1
2
3
2 - DR AIN  
3 - SO URCE  
4 - DR AIN  
14.09 (.555)  
13.47 (.530)  
4.06 (.160)  
3.55 (.140)  
0.93 (.037)  
0.69 (.027)  
0.55 (.022)  
0.46 (.018)  
3X  
3X  
1.40 (.055)  
3X  
1.15 (.045)  
0.36 (.014)  
M
B
A
M
2.92 (.115)  
2.64 (.104)  
2.54 (.100)  
2X  
N OTES:  
1
2
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.  
CO NTR OLLING DIM ENSIO N : INCH  
3
4
O UTLINE CO NF ORMS TO JEDEC OUTLINE TO-220AB.  
HEATSINK & LE AD MEASUR EMENTS D O NOT INCLUDE BURRS.  
TO-220AB Part Marking Information  
EXAMPLE: THIS IS AN IRF1010  
PART NUMBER  
INTERNATIONAL  
RECTIFIER  
LOGO  
LOT CODE 1789  
ASSEMBLED ON WW 19, 1997  
IN THE ASSEMBLY LINE "C"  
DAT E CODE  
YEAR 7 = 1997  
WEEK 19  
ASSEMBLY  
LOT CODE  
LINE C  
Notes:  
Repetitive rating; pulse width limited by  
ƒISD ≤ 37A, di/dt ≤ 170A/µs, VDD ≤ V(BR)DSS  
,
max. junction temperature.  
TJ ≤ 175°C  
„Pulse width ≤ 400µs; duty cycle ≤ 2%.  
‚Starting TJ = 25°C, L = 0.98mH  
RG = 25Ω, IAS = 37A, VGS=10V  
ꢀCoss eff. is a fixed capacitance that gives the same charging time  
as Coss while VDS is rising from 0 to 80% VDSS  
Data and specifications subject to change without notice.  
This product has been designed and qualified for the Industrial market.  
Qualification Standards can be found on IR’s Web site.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7903  
Visit us at www.irf.com for sales contact information.5/01  
8
www.irf.com  

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