IRFB7440PBF [INFINEON]
Brushed Motor drive applications; ??有刷电机驱动应用型号: | IRFB7440PBF |
厂家: | Infineon |
描述: | Brushed Motor drive applications |
文件: | 总10页 (文件大小:270K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 97779
StrongIRFET
IRFB7440PbF
Applications
HEXFET® Power MOSFET
l Brushed Motor drive applications
l BLDC Motor drive applications
l Battery powered circuits
l Half-bridge and full-bridge topologies
l Synchronous rectifier applications
l Resonant mode power supplies
l OR-ing and redundant power switches
l DC/DC and AC/DC converters
l DC/AC Inverters
D
S
VDSS
40V
RDS(on) typ.
2.0m
2.5m
208A
max.
G
ID
ID
120A
(Package Limited)
D
S
D
Benefits
G
l Improved Gate, Avalanche and Dynamic dV/dt
TO-220AB
IRFB7440PbF
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
G
Gate
D
Drain
S
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
Source
Ordering Information
Base Part Number
Package Type
Standard Pack
Form
Complete Part
Number
Quantity
IRFB7440PbF
TO-220
Tube
50
IRFB7440PbF
7.0
6.0
5.0
4.0
3.0
2.0
1.0
240
200
160
120
80
I
= 100A
D
Limited By Package
T
= 125°C
J
40
T
= 25°C
J
0
4
6
8
10 12 14
16 18 20
25
50
75
100
125
150
175
T
, Case Temperature (°C)
C
V
Gate -to -Source Voltage (V)
GS,
Fig 2. Maximum Drain Current vs. Case Temperature
Fig 1. Typical On-Resistance vs. Gate Voltage
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1
04/23/12
IRFB7440PbF
Absolute Maximum Ratings
Symbol
Parameter
Max.
208
Units
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
Pulsed Drain Current
147
A
120
772
208
PD @TC = 25°C
Maximum Power Dissipation
W
1.4
Linear Derating Factor
W/°C
V
± 20
VGS
TJ
Gate-to-Source Voltage
-55 to + 175
Operating Junction and
°C
TSTG
Storage Temperature Range
300
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
10lbf in (1.1N m)
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy
238
298
mJ
EAS (tested)
IAR
Single Pulse Avalanche Energy Tested Value
Avalanche Current
See Fig. 14, 15, 22a, 22b
A
Repetitive Avalanche Energy
EAR
mJ
Thermal Resistance
Symbol
Parameter
Typ.
–––
Max.
0.72
–––
62
Units
R
JC
R
CS
R
JA
Junction-to-Case
°C/W
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
0.50
–––
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
40
–––
–––
V
VGS = 0V, ID = 250μA
V(BR)DSS/ TJ
––– 0.035 –––
V/°C Reference to 25°C, ID = 5.0mA
RDS(on)
–––
–––
2.2
2.0
3.0
2.5
–––
3.9
m
VGS = 10V, ID = 100A
VGS = 6.0V, ID = 50A
VDS = VGS, ID = 100μA
m
VGS(th)
IDSS
Gate Threshold Voltage
3.0
V
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.6
1.0
μA
nA
V
DS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
GS = 20V
VGS = -20V
150
100
-100
–––
IGSS
RG
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
V
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 120A. Note that current
limitations arising from heating of the device leads may occur with
ꢀ Pulse width 400μs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
.
some lead mounting arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.048mH
RG = 50, IAS = 100A, VGS =10V.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS
.
R is measured at TJ approximately 90°C.
This value determined from sample failure population,
starting TJ = 25°C, L= 0.048mH, RG = 50, IAS = 100A, VGS =10V.
ISD 100A, di/dt 1330A/μs, VDD V(BR)DSS, TJ 175°C.
2
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IRFB7440PbF
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Forward Transconductance
88
–––
–––
135
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
VDS = 10V, ID = 100A
Total Gate Charge
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
90
nC ID = 100A
VDS =20V
Qgs
Qgd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
23
32
VGS = 10V
Qsync
td(on)
tr
58
ID = 100A, VDS =0V, VGS = 10V
24
ns VDD = 20V
ID = 30A
Rise Time
68
td(off)
tf
Turn-Off Delay Time
115
68
RG = 2.7
VGS = 10V
Fall Time
Ciss
Coss
Crss
Input Capacitance
4730
680
460
845
980
pF VGS = 0V
Output Capacitance
V
DS = 25V
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
ƒ = 1.0 MHz
C
oss eff. (ER)
VGS = 0V, VDS = 0V to 32V
VGS = 0V, VDS = 0V to 32V
Coss eff. (TR)
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
D
S
IS
Continuous Source Current
–––
–––
193
A
A
V
MOSFET symbol
(Body Diode)
Pulsed Source Current
showing the
integral reverse
G
ISM
–––
–––
772
(Body Diode)
p-n junction diode.
TJ = 25°C, IS = 100A, VGS = 0V
VSD
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
–––
–––
–––
–––
–––
–––
–––
0.9
6.8
24
28
17
20
1.3
1.3
–––
–––
–––
–––
–––
–––
dv/dt
trr
V/ns TJ = 175°C, IS = 100A, VDS = 40V
ns TJ = 25°C
TJ = 125°C
VR = 34V,
IF = 100A
di/dt = 100A/μs
Qrr
Reverse Recovery Charge
Reverse Recovery Current
nC TJ = 25°C
TJ = 125°C
IRRM
A
TJ = 25°C
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3
IRFB7440PbF
1000
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
TOP
TOP
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
10
BOTTOM
BOTTOM
4.5V
4.5V
1
60μs PULSE WIDTH
Tj = 25°C
60μs PULSE WIDTH
Tj = 175°C
0.1
0.1
1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 3. Typical Output Characteristics
Fig 4. Typical Output Characteristics
1000
100
10
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
= 100A
= 10V
D
V
GS
T
= 175°C
J
T
= 25°C
J
V
= 10V
DS
60μs PULSE WIDTH
1.0
3
4
5
6
7
8
9
-60 -40 -20 0 20 40 60 80 100120140160180
, Junction Temperature (°C)
T
J
V
, Gate-to-Source Voltage (V)
GS
Fig 6. Normalized On-Resistance vs. Temperature
Fig 5. Typical Transfer Characteristics
100000
10000
1000
14.0
V
= 0V,
= C
f = 1 MHZ
GS
I = 100A
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
12.0
= C
rss
oss
gd
= C + C
V
= 32V
= 20V
DS
ds
gd
V
10.0
8.0
6.0
4.0
2.0
0.0
DS
C
C
iss
oss
rss
C
100
1
10
, Drain-to-Source Voltage (V)
100
0
20
40
60
80
100
120
V
Q
, Total Gate Charge (nC)
DS
G
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage
4
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IRFB7440PbF
1000
100
10
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
T
= 175°C
J
100μsec
1msec
Limited by
package
T
= 25°C
J
10msec
DC
1
1
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
0.1
0.1
0.0
0.5
1.0
1.5
2.0
2.5
0.1
1
10
100
V
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 10. Maximum Safe Operating Area
Fig 9. Typical Source-Drain Diode
Forward Voltage
0.8
50
49
48
47
46
45
44
43
42
41
40
Id = 5.0mA
V
= 0V to 32V
DS
0.6
0.4
0.2
0.0
0
5
10 15 20 25 30 35 40 45
Drain-to-Source Voltage (V)
-60 -40 -20 0 20 40 60 80 100120140160180
, Temperature ( °C )
T
J
V
DS,
Fig 11. Drain-to-Source Breakdown Voltage
Fig 12. Typical COSS Stored Energy
40
V
V
V
V
V
= 5.5V
GS
= 6.0V
= 7.0V
= 8.0V
=10V
GS
GS
GS
GS
30
20
10
0
0
100 200 300 400 500 600 700 800
, Drain Current (A)
I
D
Fig 13. Typical On-Resistance vs. Drain Current
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5
IRFB7440PbF
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
0.01
Notes:
SINGLE PULSE
( THERMAL RESPONSE )
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
250
200
150
100
50
TOP
BOTTOM 1.0% Duty Cycle
= 100A
Single Pulse
I
D
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
0
25
50
75
100
125
150
175
EAS (AR) = PD (ave)·tav
Starting T , Junction Temperature (°C)
J
Fig 16. Maximum Avalanche Energy vs. Temperature
6
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IRFB7440PbF
5.0
4.0
3.0
2.0
1.0
8
7
6
5
4
3
2
1
I = 60A
F
V
= 34V
R
T = 25°C
J
T = 125°C
J
I
I
I
= 100μA
= 1.0mA
= 1.0A
D
D
D
0
200
400
600
800
1000
-75 -50 -25
0
25 50 75 100 125 150 175
T , Temperature ( °C )
di /dt (A/μs)
F
J
Fig. 18 - Typical Recovery Current vs. dif/dt
Fig 17. Threshold Voltage vs. Temperature
8
110
I = 100A
F
I = 60A
F
7
100
V
= 34V
V
= 34V
R
R
T = 25°C
T = 25°C
J
J
6
5
4
3
2
1
90
80
70
60
50
40
T = 125°C
J
T = 125°C
J
0
200
400
600
800
1000
0
200
400
600
800
1000
di /dt (A/μs)
di /dt (A/μs)
F
F
Fig. 19 - Typical Recovery Current vs. dif/dt
Fig. 20 - Typical Stored Charge vs. dif/dt
100
I = 100A
F
V
= 34V
R
80
60
40
20
0
T = 25°C
J
T = 125°C
J
0
200
400
600
800
1000
di /dt (A/μs)
F
Fig. 21 - Typical Stored Charge vs. dif/dt
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7
IRFB7440PbF
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
-
*
=10V
V
GS
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Inductor Current
I
SD
Ripple
5%
* VGS = 5V for Logic Level Devices
Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
VGS
0.01
t
p
I
AS
Fig 22b. Unclamped Inductive Waveforms
Fig 22a. Unclamped Inductive Test Circuit
RD
VDS
V
DS
90%
VGS
D.U.T.
RG
+
VDD
-
VGS
10%
Pulse Width µs
Duty Factor
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 23a. Switching Time Test Circuit
Fig 23b. Switching Time Waveforms
Id
Current Regulator
Same Type as D.U.T.
Vds
Vgs
50K
.2F
12V
.3F
+
V
DS
D.U.T.
-
Vgs(th)
V
GS
3mA
I
I
D
G
Qgs1
Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 24a. Gate Charge Test Circuit
Fig 24b. Gate Charge Waveform
8
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IRFB7440PbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
IRFB7440PbF
Qualification information
†
Qualification level
Industrial††
(per JEDEC JESD47F††† guidelines)
TO-220
Not applicable
RoHS compliant
Yes
Qualification standards can be found at International Rectifiers web site: http://www.irf.com/product-info/reliability/
Higher qualification ratings may be available should the user have such requirements. Please contact your
International Rectifier sales representative for further information: http:www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 04/2012
10
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