IRFB7746PBF_15 [INFINEON]
Brushed motor drive applications;
| 型号： | IRFB7746PBF_15 |
| 厂家： | 
Infineon |
| 描述： | Brushed motor drive applications |
| 文件： | 总10页 (文件大小：535K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
StrongIRFET™
IRFB7746PbF
HEXFET® Power MOSFET
Application
Brushed motor drive applications
BLDC motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC inverters
VDSS
75V
RDS(on) typ.
9.0m
10.6m
59A
max
ID
Benefits
S
D
Improved gate, avalanche and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and dI/dt capability
Lead-free, RoHS compliant
G
Halogen-free
G
D
S
Gate
Drain
Source
Base part number
Package Type
Standard Pack
Form
Orderable Part Number
Quantity
IRFB7746PbF
TO-220
Tube
50
IRFB7746PbF
25
20
15
10
5
60
50
40
30
20
10
0
I
= 35A
D
T
= 125°C
J
T
= 25°C
J
4
6
8
10 12 14 16 18 20
25
50
75
100
125
150
175
T
, Case Temperature (°C)
C
V
Gate -to -Source Voltage (V)
GS,
Fig 2. Maximum Drain Current vs. Case Temperature
Fig 1. Typical On-Resistance vs. Gate Voltage
1
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IRFB7746PbF
Absolute Maximum Rating
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
59
42
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
219
99
PD @TC = 25°C
W
W/°C
V
0.66
± 20
VGS
Gate-to-Source Voltage
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Avalanche Characteristics
Symbol
EAS (Thermally limited)
EAS (Thermally limited)
IAR
Max.
111
154
Units
mJ
Parameter
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy
Avalanche Current
A
mJ
See Fig 15, 16, 23a, 23b
EAR
Repetitive Avalanche Energy
Thermal Resistance
Symbol
Parameter
Typ.
–––
0.50
–––
Max.
1.52
–––
62
Units
Junction-to-Case
RJC
RCS
RJA
Case-to-Sink, Flat Greased Surface
°C/W
Junction-to-Ambient
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Min. Typ. Max. Units
75 ––– –––
––– 0.06 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
VGS = 0V, ID = 250µA
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
V
V(BR)DSS/TJ
RDS(on)
–––
9.0 10.6
VGS = 10V, ID = 35A
m
––– 10.4 –––
VGS = 6.0V, ID = 18A
VGS(th)
IDSS
Gate Threshold Voltage
2.1 –––
––– –––
––– ––– 150
––– ––– 100
––– ––– -100
3.7
1.0
V
VDS = VGS, ID = 100µA
VDS =75 V, VGS = 0V
Drain-to-Source Leakage Current
µA
VDS =75V,VGS = 0V,TJ =125°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
V
V
GS = 20V
GS = -20V
IGSS
RG
nA
–––
1.6
–––
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 170µH, RG = 50, IAS = 35A, VGS =10V.
ISD 35A, di/dt 432A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS
.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS
.
R is measured at TJ approximately 90°C.
Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 18A, VGS =10V.
2
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IRFB7746PbF
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Parameter
Forward Transconductance
Total Gate Charge
Min.
132
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
–––
55
–––
83
S
VDS = 10V, ID = 35A
Qg
ID = 35A
Qgs
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg – Qgd)
Turn-On Delay Time
12
–––
–––
–––
–––
–––
VDS = 38V
VGS = 10V
nC
Qgd
16
Qsync
td(on)
tr
39
9.9
36
VDD = 38V
ID = 35A
Rise Time
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
–––
–––
–––
33
30
–––
–––
–––
–––
–––
RG= 2.7
V
GS = 10V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
3049
255
150
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 7
pF
Effective Output Capacitance
(Energy Related)
Coss eff.(ER)
Coss eff.(TR)
–––
–––
236
300
–––
–––
VGS = 0V, VDS = 0V to 60V
VGS = 0V, VDS = 0V to 60V
Effective Output Capacitance
(Time Related)
Diode Characteristics
Symbol
Parameter
Min.
Typ. Max. Units
Conditions
MOSFET symbol
D
Continuous Source Current
(Body Diode)
IS
–––
–––
59
showing the
A
G
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
ISM
–––
–––
–––
–––
219
1.2
S
VSD
Diode Forward Voltage
V
TJ = 25°C,IS = 35A,VGS = 0V
dv/dt
Peak Diode Recovery dv/dt
–––
–––
–––
–––
–––
–––
8.0
28
33
30
42
1.8
––– V/ns TJ = 175°C,IS = 35A,VDS = 75V
–––
–––
–––
–––
–––
TJ = 25°C
VDD = 64V
IF = 35A,
trr
Reverse Recovery Time
ns
TJ = 125°C
TJ = 25°C di/dt = 100A/µs
Qrr
Reverse Recovery Charge
Reverse Recovery Current
nC
A
TJ = 125°C
IRRM
TJ = 25°C
3
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November 7, 2014
IRFB7746PbF
1000
100
10
1000
100
10
VGS
15V
10V
7.0V
6.0V
5.5V
5.0V
4.0V
4.0V
VGS
15V
10V
7.0V
6.0V
5.5V
5.0V
4.5V
4.0V
TOP
TOP
BOTTOM
BOTTOM
4.0V
1
4.0V
1
60µs PULSE WIDTH
Tj = 175°C
60µs PULSE WIDTH
Tj = 25°C
0.1
1
0.1
10
100
1000
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 4. Typical Output Characteristics
Fig 3. Typical Output Characteristics
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1000
100
10
I
= 35A
D
V
= 10V
GS
T = 175°C
J
T = 25°C
J
1
V
= 25V
DS
60µs PULSE WIDTH
0.1
-60 -40 -20 0 20 40 60 80 100120140160180
2.0
3.0
4.0
5.0
6.0
7.0
T , Junction Temperature (°C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 6. Normalized On-Resistance vs. Temperature
Fig 5. Typical Transfer Characteristics
14.0
100000
10000
1000
V
= 0V,
f = 1 MHZ
GS
I = 35A
D
C
C
C
= C + C , C
SHORTED
iss
gs
gd
ds
12.0
10.0
8.0
= C
V
V
V
= 60V
DS
= 38V
DS
= 15V
DS
rss
oss
gd
= C + C
ds
gd
C
iss
6.0
C
4.0
oss
C
rss
2.0
0.0
100
0
10
20
30
40
50
60
70
1
10
100
Q , Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
DS
G
Fig 8. Typical Gate Charge vs.
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
Gate-to-Source Voltage
4
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IRFB7746PbF
1000
100
10
100µsec
1msec
100
10
T = 175°C
J
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
1
T = 25°C
J
10msec
DC
0.1
0.01
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
1.0
0.2
0.6
1.0
1.4
0.1
1
10
V
, Source-to-Drain Voltage (V)
SD
V
, Drain-to-Source Voltage (V)
DS
Fig 10. Maximum Safe Operating Area
Fig 9. Typical Source-Drain Diode Forward Voltage
0.6
95
Id = 1.0mA
0.5
0.4
0.3
0.2
0.1
0.0
90
85
80
75
-10
0
10 20 30 40 50 60 70 80
-60 -40 -20
0
20 40 60 80 100120140160180
, Temperature ( °C )
T
V
Drain-to-Source Voltage (V)
J
DS,
Fig 11. Drain-to-Source Breakdown Voltage
Fig 12. Typical Coss Stored Energy
60
50
40
30
20
10
Vgs = 5.5V
Vgs = 6.0V
Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
0
0
20 40 60 80 100 120 140 160 180 200
, Drain Current (A)
I
D
Fig 13. Typical On-Resistance vs. Drain Current
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5
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November 7, 2014
IRFB7746PbF
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
SINGLE PULSE
Notes:
( THERMAL RESPONSE )
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
Tstart = 25°C (Single Pulse)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 125°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Avalanche Current vs. Pulse Width
120
100
80
60
40
20
0
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1.Avalanche failures assumption:
TOP
BOTTOM 1.0% Duty Cycle
= 35A
Single Pulse
I
D
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
23a, 23b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
I
av = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)· av
t
Fig 16. Maximum Avalanche Energy vs. Temperature
6
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IRFB7746PbF
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
14
12
10
8
I = 24A
F
V
= 64V
R
T = 25°C
J
T = 125°C
J
I
= 100µA
= 250µA
= 1.0mA
= 1.0A
D
6
I
D
I
D
4
I
D
2
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
200
400
600
800
1000
T , Temperature ( °C )
di /dt (A/µs)
J
F
Fig 17. Threshold Voltage vs. Temperature
Fig 18. Typical Recovery Current vs. dif/dt
16
14
12
10
8
250
I = 24A
I = 35A
F
F
V
= 64V
V
= 64V
R
R
200
150
100
50
T = 25°C
J
T = 125°C
J
T = 25°C
J
T = 125°C
J
6
4
2
0
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di /dt (A/µs)
di /dt (A/µs)
F
F
Fig 19. Typical Recovery Current vs. dif/dt
Fig 20. Typical Stored Charge vs. dif/dt
300
I = 35A
F
V
= 64V
R
250
200
150
100
50
T = 25°C
J
T = 125°C
J
0
0
200
400
600
800
1000
di /dt (A/µs)
F
Fig 21. Typical Stored Charge vs. dif/dt
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IRFB7746PbF
Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V
(BR)DSS
t
15V
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
0.01
t
p
I
AS
Fig 23a. Unclamped Inductive Test Circuit
Fig 23b. Unclamped Inductive Waveforms
Fig 24a. Switching Time Test Circuit
Fig 24b. Switching Time Waveforms
Id
Vds
Vgs
VDD
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 25b. Gate Charge Waveform
Fig 25a. Gate Charge Test Circuit
8
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IRFB7746PbF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
E X A M P L E :
T H IS IS A N IR F 1 0 1 0
L O C O D E 1 7 8 9
A S S E M B L E D
IN T H A S S E M B L Y L IN
P A R T N U M B E R
D A T E C O D E
T
IN T E R N A T IO
R E C T IF IE R
L O
N A L
O
N
W
W
1 9 , 2 0 0 0
"C "
G
O
E
E
Y E A R
E E K 1 9
L IN
0
=
2 0 0 0
N
o t e : "P " in a s s e m b ly lin e p o s it io n
in d ic a t e s "L e a d F r e e "
A S S E M B L Y
L O C O D E
W
-
T
E
C
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
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IRFB7746PbF
Qualification Information†
Qualification Level
Industrial
(per JEDEC JESD47F) ††
TO-220
N/A
Yes
Moisture Sensitivity Level
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
Revision History
Date
Comments
Updated EAS (L =1mH) = 154mJ on page 2
Updated note 8 “Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 18A, VGS =10V” on page 2
Added “Halogen– Free” to the benefits on page1
11/7/2014
Updated package outline on page 9.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
10
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November 7, 2014
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