IRFBC40 [INFINEON]
Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A); 功率MOSFET ( VDSS = 600V , RDS(ON)最大值= 1.2ohm ,ID = 6.2A )型号: | IRFBC40 |
厂家: | Infineon |
描述: | Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A) |
文件: | 总8页 (文件大小:99K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD-91885A
SMPS MOSFET
VDSS
IRFBC40A
HEXFET® Power MOSFET
Applications
Rds(on) max
ID
l Switch Mode Power Supply ( SMPS )
l Uninterruptable Power Supply
l High speed power switching
600V
1.2Ω
6.2A
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
G D S
TO-220AB
l Effective Coss Specified ( See AN 1001)
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
6.2
3.9
A
25
PD @TC = 25°C
Power Dissipation
125
W
W/°C
V
Linear Derating Factor
1.0
VGS
dv/dt
TJ
Gate-to-Source Voltage
± 30
Peak Diode Recovery dv/dt
Operating Junction and
6.0
V/ns
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typical SMPS Topologies:
l Single Transistor Forward
Notes through ꢀare on page 8
www.irf.com
1
6/24/99
IRFBC40A
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
600 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.66 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance ––– ––– 1.2
Ω
VGS = 10V, ID = 3.7A
VDS = VGS, ID = 250µA
VDS = 600V, VGS = 0V
VDS = 480V, VGS = 0V, TJ = 125°C
VGS = 30V
Gate Threshold Voltage
2.0
––– 4.0
V
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
µA
nA
IDSS
IGSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
3.4 ––– –––
Conditions
VDS = 50V, ID = 3.7A
ID = 6.2A
gfs
S
Qg
––– ––– 42
––– ––– 10
––– ––– 20
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 480V
VGS = 10V, See Fig. 6 and 13
–––
–––
–––
–––
13 –––
23 –––
31 –––
18 –––
VDD = 300V
ID = 6.2A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 9.1Ω
RD = 47Ω,See Fig. 10
VGS = 0V
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
––– 1036 –––
––– 136 –––
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
VDS = 25V
–––
7.0 –––
pF
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 480V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 480V ꢀ
––– 1487 –––
–––
–––
36 –––
48 –––
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
Max.
570
6.2
Units
mJ
EAS
IAR
–––
–––
–––
Avalanche Current
A
EAR
Repetitive Avalanche Energy
13
mJ
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
1.0
Units
RθJC
RθCS
RθJA
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.50
–––
62
°C/W
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
IS
Continuous Source Current
(Body Diode)
MOSFET symbol
6.2
25
––– –––
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.5
––– 431 647
––– 1.8 2.8
V
TJ = 25°C, IS = 6.2A, VGS = 0V
ns
TJ = 25°C, IF = 6.2A
Qrr
ton
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
www.irf.com
IRFBC40A
100
10
100
10
1
VGS
15V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
TOP
TOP
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
1
4.5V
4.5V
0.1
0.01
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T = 150 C
J
°
T = 25 C
J
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics,
Fig 1. Typical Output Characteristics,
100
10
1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
6.2A
=
I
D
°
T = 150 C
J
°
T = 25 C
J
V
= 50V
DS
20µs PULSE WIDTH
V
= 10V
GS
0.1
4.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
5.0
6.0
7.0
8.0 9.0
10.0
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
www.irf.com
3
IRFBC40A
20
16
12
8
100000
6.2A
=
I
D
V
GS
= 0V,
f = 1 MHZ
C
= C + C
,
C
SHORTED
iss
gs
gd
ds
V
V
V
= 480V
= 300V
= 120V
DS
DS
DS
C
= C
rss
gd
10000
1000
100
10
C
= C + C
oss
ds gd
Ciss
Coss
4
Crss
FOR TEST CIRCUIT
SEE FIGURE 13
1
0
0
8
16
24 32
40
1
10
100
1000
Q
, Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
°
T = 150 C
J
100us
1ms
°
T = 25 C
J
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
0.1
0.4
0.1
0.6
0.8
1.0
1.2
10
100
1000
10000
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
www.irf.com
IRFBC40A
RD
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
VDS
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
T
75
100
125
°
150
, Case Temperature ( C)
C
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
P
DM
0.10
0.05
0.1
0.01
t
1
t
2
0.02
0.01
Notes:
SINGLE PULSE
1. Duty factor D =
t / t
1 2
(THERMAL RESPONSE)
2. Peak T = P
x Z
+ T
C
J
DM
thJC
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRFBC40A
1400
1200
1000
800
600
400
200
0
1 5V
I
D
TOP
2.8A
3.9A
BOTTOM 6.2A
DRIVER
L
V
G
DS
D.U.T
R
+
V
D D
-
I
A
AS
20V
0.01
t
Ω
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
Vs. DrainCurrent
Q
G
10 V
820
Q
Q
GD
GS
V
800
780
760
740
720
G
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
V
GS
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
3mA
I
, Avalanche Current ( A)
AV
I
I
D
G
Current Sampling Resistors
Fig 12d. Typical Drain-to-Source Voltage
Fig 13b. Gate Charge Test Circuit
Vs. Avalanche Current
6
www.irf.com
IRFBC40A
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
Low Stray Inductance
D.U.T
•
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig14.ForN-ChannelHEXFETS
www.irf.com
7
IRFBC40A
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
-
B
-
3.78 (.149)
3.54 (.139)
2 .87 (.113 )
2 .62 (.103 )
4.69 (.185 )
4.20 (.165 )
1.32 (.052 )
1.22 (.048 )
-
A
-
6.4 7 (.2 55)
6.1 0 (.2 40)
4
15 .24 (.60 0)
14 .84 (.58 4)
1.15 (.045)
M IN
LE A D A S S IG N M E N TS
1
2
3
4
-
-
-
-
GA TE
1
2
3
DR A IN
S O U R C E
DR A IN
14.09 (.5 55)
13.47 (.5 30)
4.0 6 (.160)
3.5 5 (.140)
0.93 (.03 7)
0.69 (.02 7)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055 )
3 X
1.15 (.045 )
0.36 (.01 4)
M
B
A
M
2 .92 (.115 )
2 .64 (.104 )
2 .54 (.100)
2X
N OTE S :
1
2
D IM E N S IO N IN G
&
TO LE R A N C IN G P E R A NS I Y 14.5 M , 19 82.
IN C H
3
4
O U TLIN E C O N F OR M S TO J E D E C O U TLIN E TO -22 0A B .
H E A TS IN K LE A D M E A S U R E M E N TS D O N O T IN CL U D E B U R R S .
C ON TR O LLIN G D IM E N S IO N
:
&
Part Marking Information
TO-220AB
E XAM P LE : THIS IS AN IRF1010
W ITH ASS E M BL Y
A
INTE RN ATIONA L
RE CTIFIER
LO GO
PAR T NUM BER
LO T CO DE 9B1M
IRF10 10
924 6
9B
1M
DA TE CODE
(YYW W )
A SS EM B LY
L OT
CO DE
YY
=
YE AR
= W EE K
W W
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
ꢀCoss eff. is a fixed capacitance that gives the same charging time
Starting TJ = 25°C, L =29.6mH
as Coss while VDS is rising from 0 to 80% VDSS
RG = 25Ω, IAS = 6.2A. (See Figure 12)
ISD ≤ 6.2A, di/dt ≤ 80A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/
Data and specifications subject to change without notice. 6/99
8
www.irf.com
相关型号:
©2020 ICPDF网 联系我们和版权申明