IRFBC40 [INFINEON]

Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A); 功率MOSFET ( VDSS = 600V , RDS(ON)最大值= 1.2ohm ,ID = 6.2A )
IRFBC40
型号: IRFBC40
厂家: Infineon    Infineon
描述:

Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A)
功率MOSFET ( VDSS = 600V , RDS(ON)最大值= 1.2ohm ,ID = 6.2A )

文件: 总8页 (文件大小:99K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
PD-91885A  
SMPS MOSFET  
VDSS  
IRFBC40A  
HEXFET® Power MOSFET  
Applications  
Rds(on) max  
ID  
l Switch Mode Power Supply ( SMPS )  
l Uninterruptable Power Supply  
l High speed power switching  
600V  
1.2Ω  
6.2A  
Benefits  
l Low Gate Charge Qg results in Simple  
Drive Requirement  
l Improved Gate, Avalanche and Dynamic  
dv/dt Ruggedness  
l Fully Characterized Capacitance and  
Avalanche Voltage and Current  
G D S  
TO-220AB  
l Effective Coss Specified ( See AN 1001)  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
6.2  
3.9  
A
25  
PD @TC = 25°C  
Power Dissipation  
125  
W
W/°C  
V
Linear Derating Factor  
1.0  
VGS  
dv/dt  
TJ  
Gate-to-Source Voltage  
± 30  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
6.0  
V/ns  
-55 to + 150  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting torqe, 6-32 or M3 screw  
°C  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Typical SMPS Topologies:  
l Single Transistor Forward  
Notes  through are on page 8  
www.irf.com  
1
6/24/99  
IRFBC40A  
Static @ TJ = 25°C (unless otherwise specified)  
Parameter  
Min. Typ. Max. Units  
600 ––– –––  
Conditions  
VGS = 0V, ID = 250µA  
V(BR)DSS  
Drain-to-Source Breakdown Voltage  
V
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.66 ––– V/°C Reference to 25°C, ID = 1mA†  
RDS(on)  
VGS(th)  
Static Drain-to-Source On-Resistance ––– ––– 1.2  
VGS = 10V, ID = 3.7A „  
VDS = VGS, ID = 250µA  
VDS = 600V, VGS = 0V  
VDS = 480V, VGS = 0V, TJ = 125°C  
VGS = 30V  
Gate Threshold Voltage  
2.0  
––– 4.0  
V
––– ––– 25  
––– ––– 250  
––– ––– 100  
––– ––– -100  
µA  
nA  
IDSS  
IGSS  
Drain-to-Source Leakage Current  
Gate-to-Source Forward Leakage  
Gate-to-Source Reverse Leakage  
VGS = -30V  
Dynamic @ TJ = 25°C (unless otherwise specified)  
Parameter  
Forward Transconductance  
Total Gate Charge  
Min. Typ. Max. Units  
3.4 ––– –––  
Conditions  
VDS = 50V, ID = 3.7A  
ID = 6.2A  
gfs  
S
Qg  
––– ––– 42  
––– ––– 10  
––– ––– 20  
Qgs  
Qgd  
td(on)  
tr  
Gate-to-Source Charge  
Gate-to-Drain ("Miller") Charge  
Turn-On Delay Time  
Rise Time  
nC VDS = 480V  
VGS = 10V, See Fig. 6 and 13 „  
–––  
–––  
–––  
–––  
13 –––  
23 –––  
31 –––  
18 –––  
VDD = 300V  
ID = 6.2A  
ns  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
RG = 9.1Ω  
RD = 47,See Fig. 10 „  
VGS = 0V  
Ciss  
Coss  
Crss  
Coss  
Coss  
Coss eff.  
Input Capacitance  
––– 1036 –––  
––– 136 –––  
Output Capacitance  
Reverse Transfer Capacitance  
Output Capacitance  
Output Capacitance  
Effective Output Capacitance  
VDS = 25V  
–––  
7.0 –––  
pF  
ƒ = 1.0MHz, See Fig. 5  
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz  
VGS = 0V, VDS = 480V, ƒ = 1.0MHz  
VGS = 0V, VDS = 0V to 480V ꢀ  
––– 1487 –––  
–––  
–––  
36 –––  
48 –––  
Avalanche Characteristics  
Parameter  
Single Pulse Avalanche Energy‚  
Typ.  
Max.  
570  
6.2  
Units  
mJ  
EAS  
IAR  
–––  
–––  
–––  
Avalanche Current  
A
EAR  
Repetitive Avalanche Energy  
13  
mJ  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
Max.  
1.0  
Units  
RθJC  
RθCS  
RθJA  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
0.50  
–––  
62  
°C/W  
Diode Characteristics  
Parameter  
Min. Typ. Max. Units  
Conditions  
D
IS  
Continuous Source Current  
(Body Diode)  
MOSFET symbol  
6.2  
25  
––– –––  
––– –––  
showing the  
A
G
ISM  
Pulsed Source Current  
(Body Diode)   
integral reverse  
p-n junction diode.  
S
VSD  
trr  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse RecoveryCharge  
Forward Turn-On Time  
––– ––– 1.5  
––– 431 647  
––– 1.8 2.8  
V
TJ = 25°C, IS = 6.2A, VGS = 0V „  
ns  
TJ = 25°C, IF = 6.2A  
Qrr  
ton  
µC di/dt = 100A/µs „  
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  
2
www.irf.com  
IRFBC40A  
100  
10  
100  
10  
1
VGS  
15V  
VGS  
15V  
10V  
8.0V  
7.0V  
6.0V  
5.5V  
5.0V  
TOP  
TOP  
10V  
8.0V  
7.0V  
6.0V  
5.5V  
5.0V  
BOTTOM 4.5V  
BOTTOM 4.5V  
1
4.5V  
4.5V  
0.1  
0.01  
20µs PULSE WIDTH  
20µs PULSE WIDTH  
°
T = 150 C  
J
°
T = 25 C  
J
0.1  
1
10  
100  
0.1  
1
10  
100  
V
, Drain-to-Source Voltage (V)  
V
, Drain-to-Source Voltage (V)  
DS  
DS  
Fig 2. Typical Output Characteristics,  
Fig 1. Typical Output Characteristics,  
100  
10  
1
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
6.2A  
=
I
D
°
T = 150 C  
J
°
T = 25 C  
J
V
= 50V  
DS  
20µs PULSE WIDTH  
V
= 10V  
GS  
0.1  
4.0  
-60 -40 -20  
0
20 40 60 80 100 120 140 160  
°
5.0  
6.0  
7.0  
8.0 9.0  
10.0  
T , Junction Temperature ( C)  
J
V
, Gate-to-Source Voltage (V)  
GS  
Fig 3. Typical Transfer Characteristics  
Fig 4. Normalized On-Resistance  
Vs. Temperature  
www.irf.com  
3
IRFBC40A  
20  
16  
12  
8
100000  
6.2A  
=
I
D
V
GS  
= 0V,  
f = 1 MHZ  
C
= C + C  
,
C
SHORTED  
iss  
gs  
gd  
ds  
V
V
V
= 480V  
= 300V  
= 120V  
DS  
DS  
DS  
C
= C  
rss  
gd  
10000  
1000  
100  
10  
C
= C + C  
oss  
ds gd  
Ciss  
Coss  
4
Crss  
FOR TEST CIRCUIT  
SEE FIGURE 13  
1
0
0
8
16  
24 32  
40  
1
10  
100  
1000  
Q
, Total Gate Charge (nC)  
G
V
, Drain-to-Source Voltage (V)  
DS  
Fig 6. Typical Gate Charge Vs.  
Fig 5. Typical Capacitance Vs.  
Gate-to-Source Voltage  
Drain-to-Source Voltage  
100  
10  
1
100  
10  
1
OPERATION IN THIS AREA LIMITED  
BY R  
DS(on)  
10us  
°
T = 150 C  
J
100us  
1ms  
°
T = 25 C  
J
10ms  
°
T = 25 C  
C
°
T = 150 C  
Single Pulse  
J
V
= 0 V  
GS  
0.1  
0.4  
0.1  
0.6  
0.8  
1.0  
1.2  
10  
100  
1000  
10000  
V
,Source-to-Drain Voltage (V)  
V
, Drain-to-Source Voltage (V)  
SD  
DS  
Fig 7. Typical Source-Drain Diode  
Fig 8. Maximum Safe Operating Area  
Forward Voltage  
4
www.irf.com  
IRFBC40A  
RD  
7.0  
6.0  
5.0  
4.0  
3.0  
2.0  
1.0  
0.0  
VDS  
VGS  
D.U.T.  
RG  
+VDD  
-
10V  
Pulse Width ≤ 1 µs  
Duty Factor ≤ 0.1 %  
Fig 10a. Switching Time Test Circuit  
V
DS  
90%  
25  
50  
T
75  
100  
125  
°
150  
, Case Temperature ( C)  
C
10%  
V
GS  
Fig 9. Maximum Drain Current Vs.  
t
t
r
t
t
f
d(on)  
d(off)  
Case Temperature  
Fig 10b. Switching Time Waveforms  
10  
1
D = 0.50  
0.20  
P
DM  
0.10  
0.05  
0.1  
0.01  
t
1
t
2
0.02  
0.01  
Notes:  
SINGLE PULSE  
1. Duty factor D =  
t / t  
1 2  
(THERMAL RESPONSE)  
2. Peak T = P  
x Z  
+ T  
C
J
DM  
thJC  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
t , Rectangular Pulse Duration (sec)  
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case  
www.irf.com  
5
IRFBC40A  
1400  
1200  
1000  
800  
600  
400  
200  
0
1 5V  
I
D
TOP  
2.8A  
3.9A  
BOTTOM 6.2A  
DRIVER  
L
V
G
DS  
D.U.T  
R
+
V
D D  
-
I
A
AS  
20V  
0.01  
t
p
Fig 12a. Unclamped Inductive Test Circuit  
V
(BR)DSS  
t
p
25  
50  
75  
100  
125  
150  
°
Starting T , Junction Temperature ( C)  
J
I
AS  
Fig 12c. Maximum Avalanche Energy  
Fig 12b. Unclamped Inductive Waveforms  
Vs. DrainCurrent  
Q
G
10 V  
820  
Q
Q
GD  
GS  
V
800  
780  
760  
740  
720  
G
Charge  
Fig 13a. Basic Gate Charge Waveform  
Current Regulator  
Same Type as D.U.T.  
50KΩ  
.2µF  
12V  
.3µF  
+
V
DS  
D.U.T.  
-
V
GS  
0.0  
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
7.0  
3mA  
I
, Avalanche Current ( A)  
AV  
I
I
D
G
Current Sampling Resistors  
Fig 12d. Typical Drain-to-Source Voltage  
Fig 13b. Gate Charge Test Circuit  
Vs. Avalanche Current  
6
www.irf.com  
IRFBC40A  
Peak Diode Recovery dv/dt Test Circuit  
+
Circuit Layout Considerations  
Low Stray Inductance  
D.U.T  
Ground Plane  
Low Leakage Inductance  
Current Transformer  
ƒ
-
+
‚
-
„
-
+

RG  
dv/dt controlled by RG  
+
-
Driver same type as D.U.T.  
ISD controlled by Duty Factor "D"  
D.U.T. - Device Under Test  
VDD  
Driver Gate Drive  
P.W.  
Period  
Period  
D =  
P.W.  
V
=10V  
*
GS  
D.U.T. I Waveform  
SD  
Reverse  
Recovery  
Current  
Body Diode Forward  
Current  
di/dt  
D.U.T. V Waveform  
DS  
Diode Recovery  
dv/dt  
V
DD  
Re-Applied  
Voltage  
Body Diode  
Forward Drop  
Inductor Curent  
I
SD  
Ripple 5%  
* VGS = 5V for Logic Level Devices  
Fig14.ForN-ChannelHEXFETS  
www.irf.com  
7
IRFBC40A  
Package Outline  
TO-220AB Outline  
Dimensions are shown in millimeters (inches)  
10.54 (.415)  
10.29 (.405)  
-
B
-
3.78 (.149)  
3.54 (.139)  
2 .87 (.113 )  
2 .62 (.103 )  
4.69 (.185 )  
4.20 (.165 )  
1.32 (.052 )  
1.22 (.048 )  
-
A
-
6.4 7 (.2 55)  
6.1 0 (.2 40)  
4
15 .24 (.60 0)  
14 .84 (.58 4)  
1.15 (.045)  
M IN  
LE A D A S S IG N M E N TS  
1
2
3
4
-
-
-
-
GA TE  
1
2
3
DR A IN  
S O U R C E  
DR A IN  
14.09 (.5 55)  
13.47 (.5 30)  
4.0 6 (.160)  
3.5 5 (.140)  
0.93 (.03 7)  
0.69 (.02 7)  
0.55 (.022)  
0.46 (.018)  
3X  
3X  
1.40 (.055 )  
3 X  
1.15 (.045 )  
0.36 (.01 4)  
M
B
A
M
2 .92 (.115 )  
2 .64 (.104 )  
2 .54 (.100)  
2X  
N OTE S :  
1
2
D IM E N S IO N IN G  
&
TO LE R A N C IN G P E R A NS I Y 14.5 M , 19 82.  
IN C H  
3
4
O U TLIN E C O N F OR M S TO J E D E C O U TLIN E TO -22 0A B .  
H E A TS IN K LE A D M E A S U R E M E N TS D O N O T IN CL U D E B U R R S .  
C ON TR O LLIN G D IM E N S IO N  
:
&
Part Marking Information  
TO-220AB  
E XAM P LE : THIS IS AN IRF1010  
W ITH ASS E M BL Y  
A
INTE RN ATIONA L  
RE CTIFIER  
LO GO  
PAR T NUM BER  
LO T CO DE 9B1M  
IRF10 10  
924 6  
9B  
1M  
DA TE CODE  
(YYW W )  
A SS EM B LY  
L OT  
CO DE  
YY  
=
YE AR  
= W EE K  
W W  
Notes:  
Repetitive rating; pulse width limited by  
„Pulse width 300µs; duty cycle 2%.  
max. junction temperature. ( See fig. 11 )  
Coss eff. is a fixed capacitance that gives the same charging time  
‚Starting TJ = 25°C, L =29.6mH  
as Coss while VDS is rising from 0 to 80% VDSS  
RG = 25, IAS = 6.2A. (See Figure 12)  
ƒISD 6.2A, di/dt 80A/µs, VDD V(BR)DSS  
TJ 150°C  
,
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331  
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020  
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200  
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590  
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111  
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086  
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630  
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936  
http://www.irf.com/  
Data and specifications subject to change without notice. 6/99  
8
www.irf.com  

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