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元器件品牌
IRFBC40ASTRL
[VISHAY]
Power MOSFET; 功率MOSFET
元器件型号：
IRFBC40ASTRL
生产厂家：
VISHAY TELEFUNKEN
描述和应用：
Power MOSFET
功率MOSFET
PDF文件：
总8页 (文件大小：343K)
下载文档：
下载PDF数据表文档文件
型号参数：IRFBC40ASTRL参数
查看货源
IRFBC40ASTRLPBF
Power MOSFET
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23
VISHAY
IRFBC40ASTRR
Power MOSFET
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13
VISHAY
IRFBC40ASTRRPBF
Power MOSFET
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156
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25
VISHAY
IRFBC40L
Power MOSFET
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156
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29
VISHAY
IRFBC40L
Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.2A)
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69
IRF
IRFBC40LC
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 43A I(D) | TO-220VAR
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35
ETC
IRFBC40LC
Power MOSFET
Warning
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19
VISHAY
IRFBC40LC
HEXFET-R POWER MOSFET
Warning
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156
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35
IRF
IRFBC40LC
HEXFET-R POWER MOSFET
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24
IRF
IRFBC40LC-002
Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
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1
VISHAY
IRFBC40LC-002PBF
Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Warning
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1
VISHAY
IRFBC40LC-006PBF
Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Warning
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1
VISHAY
IRFBC40LC-010
Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Warning
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1
VISHAY
IRFBC40LC-017PBF
Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Warning
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1
VISHAY
IRFBC40LC-019PBF
Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Warning
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1
VISHAY
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