IRFH4234TRPBF [INFINEON]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
| 型号： | IRFH4234TRPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
| 文件： | 总9页 (文件大小：248K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FastIRFET™
IRFH4234PbF
HEXFET® Power MOSFET
VDSS
25
V
RDS(on) max
(@ VGS = 10V)
4.6
m
(@ VGS = 4.5V)
7.3
8.2
Qg (typical)
nC
A
ID
60
PQFN 5X6 mm
(@TC (Bottom) = 25°C)
Applications
Control MOSFET for Sync Buck Converters
Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters
Features
Benefits
Low Charge (typical 8.2 nC)
Low RDSon (<4.6 m)
Low Thermal Resistance to PCB (<4.6 °C/W)
Low Switching Losses
Lower Conduction Losses
Enable better Thermal Dissipation
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Low Profile (<0.9 mm)
results in
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial Qualification
Environmentally Friendlier
Increased Reliability
Base part number
Package Type
Standard Pack
Orderable Part Number
Form
Tape and Reel
Quantity
4000
IRFH4234PbF
PQFN 5mm x 6 mm
IRFH4234TRPbF
Absolute Maximum Ratings
Parameter
Gate-to-Source Voltage
Max.
± 20
22
Units
VGS
V
A
ID @ TA = 25°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
60
38
240
3.5
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Power Dissipation
W
Power Dissipation
27
Linear Derating Factor
0.028
W/°C
°C
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
Notes through are on page 8
1
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© 2013 International Rectifier
August 16, 2013
IRFH4234PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
25
–––
–––
–––
1.1
–––
–––
–––
–––
60
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
20
Max. Units
–––
––– mV/°C Reference to 25°C, ID = 1mA
Conditions
VGS = 0V, ID = 250µA
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
V
BVDSS/TJ
RDS(on)
3.5
5.6
1.6
-5.6
–––
–––
–––
–––
17
8.2
1.6
1.6
3.1
1.9
4.7
7.7
1.8
7.8
30
4.6
7.3
2.1
VGS = 10V, ID = 30A
VGS = 4.5V, ID = 30A
VDS = VGS, ID = 25µA
m
VGS(th)
VGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
V
––– mV/°C
1.0
100
-100
–––
–––
12.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
µA VDS = 20V, VGS = 0V
nA VGS = 20V
IGSS
VGS = -20V
gfs
Qg
S
VDS = 5.0V, ID = 30A
nC VGS = 10V, VDS = 13V, ID = 30A
Qg
Total Gate Charge
VDS = 13V
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
nC
VGS = 4.5V
ID = 30A
nC VDS = 16V, VGS = 0V
VDD = 13V, VGS = 4.5V
ns ID = 30A
RG=1.8
Gate Resistance
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
8.0
5.3
1011
286
83
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = 0V
pF
VDS = 13V
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
42
30
EAS
IAR
Diode Characteristics
Parameter
Min.
Typ.
Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
–––
–––
60
A
MOSFET symbol
showing the
D
G
integral reverse
p-n junction diode.
ISM
Pulsed Source Current
(Body Diode)
–––
–––
240
S
VSD
trr
Qrr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
10
11
1.0
15
17
V
TJ = 25°C, IS = 30A, VGS = 0V
ns TJ = 25°C, IF = 30A, VDD = 13V
nC
di/dt = 200A/µs
Thermal Resistance
Parameter
Typ.
Max.
Units
Junction-to-Case
–––
–––
–––
–––
4.6
RJC (Bottom)
RJC (Top)
RJA
°C/W
Junction-to-Case
24
36
24
Junction-to-Ambient
Junction-to-Ambient
RJA (<10s)
2
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© 2013 International Rectifier
August 16, 2013
IRFH4234PbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
5.0V
4.5V
4.0V
3.5V
3.25V
3.0V
2.75V
5.0V
4.5V
4.0V
3.5V
3.25V
3.0V
2.75V
BOTTOM
BOTTOM
1
2.75V
2.75V
60µs PULSE WIDTH
Tj = 150°C
60µs PULSE WIDTH
Tj = 25°C
1
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
= 30A
D
V
= 10V
GS
100
T = 150°C
J
10
T = 25°C
J
V
= 10V
DS
60µs PULSE WIDTH
1.0
1.0
2.0
V
3.0
4.0
5.0
6.0
7.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
, Gate-to-Source Voltage (V)
T , Junction Temperature (°C)
GS
J
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
14.0
100000
10000
1000
100
V
= 0V,
f = 1 MHZ
GS
I = 30A
D
C
C
C
= C + C , C
SHORTED
iss
gs
gd
ds
12.0
= C
rss
oss
gd
= C + C
ds
gd
V
V
V
= 20V
DS
= 13V
DS
= 5.0V
DS
10.0
8.0
6.0
4.0
2.0
0.0
C
iss
C
oss
C
rss
10
0
2
4
6
8
10 12 14 16 18
1
10
100
Q , Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
DS
G
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3
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© 2013 International Rectifier
August 16, 2013
IRFH4234PbF
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100µsec
T = 150°C
J
T = 25°C
J
1msec
10msec
DC
1
1
0.1
0.01
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
GS
0.1
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1
10
100
V
, Source-to-Drain Voltage (V)
SD
V
, Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
2.8
60
50
40
30
20
10
0
2.4
2.0
I
= 25µA
D
I
= 250µA
= 1.0mA
= 10mA
1.6
1.2
0.8
D
I
D
I
D
-75 -50 -25
0
25 50 75 100 125 150
25
50
75
100
125
150
T , Temperature ( °C )
T
, Case Temperature (°C)
J
C
Fig 10. Drain-to–Source Breakdown Voltage
Fig 9. Maximum Drain Current vs. Case Temperature
10
D = 0.50
1
0.1
0.20
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
Notes:
( THERMAL RESPONSE )
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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© 2013 International Rectifier
August 16, 2013
IRFH4234PbF
12.0
10.0
8.0
200
160
120
80
I
= 30A
I
D
D
TOP
6.8A
12A
BOTTOM 30A
T = 125°C
J
6.0
4.0
40
T = 25°C
J
2.0
0
2
4
6
8
10 12 14 16 18 20
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
V
Gate -to -Source Voltage (V)
GS,
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. On– Resistance vs. Gate Voltage
1000
Duty Cycle = Single Pulse
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
Tstart =25°C (Single Pulse)
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tstart = 125°C.
j = 25°C and
1
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
tav (sec)
Fig 14. Typical Avalanche Current vs. Pulsewidth
5
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© 2013 International Rectifier
August 16, 2013
IRFH4234PbF
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V
(BR)DSS
t
15V
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
0.01
t
I
p
AS
Fig 16a. Unclamped Inductive Test Circuit
Fig 16b. Unclamped Inductive Waveforms
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
Id
Vds
Vgs
VDD
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 19. Gate Charge Waveform
Fig 18. Gate Charge Test Circuit
6
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© 2013 International Rectifier
August 16, 2013
IRFH4234PbF
PQFN 5x6 Outline "B" Package Details
For more information on board mounting, including footprint and stencil recommendation, please refer to application note
AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 5x6 Outline "B" Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
PART NUMBER
XXXX
(“4 or 5 digits”)
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
MARKING CODE
XYWWX
XXXXX
(Per Marking Spec)
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
7
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© 2013 International Rectifier
August 16, 2013
IRFH4234PbF
PQFN 5x6 Outline "B" Tape and Reel
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Qualification Information†
Industrial†
(per JEDEC JESD47F†† guidelines)
Qualification Level
MSL1
PQFN 5mm x 6mm
Moisture Sensitivity Level
RoHS Compliant
(per JEDEC J-STD-020D††)
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.093mH, RG = 50, IAS = 30A.
Pulse width 400 µs; duty cycle 2%.
R is measured at TJ of approximately 90°C.
When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:
http://www.irf.com/technical-info/appnotes/an-994.pdf
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
8
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© 2013 International Rectifier
August 16, 2013
IRFH4234PbF
Revision History
Date
Comments
Updated Rg typical from TBD to 1.8 .
Remove note 6, on page 8.
01/23/2013
Remove reference to note 6 on maximum current rating, on page 1.
Updated package 3D drawing, on page 1.
Updated IS rating from 30 A to 60 A, on page 2.
Updated package outline drawing, on page 7.
05/15/2013
08/15/2013
Added “FastIRFET™” above the part number, on page 1.
9
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© 2013 International Rectifier
August 16, 2013
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