IRFH4255DTRPBF [INFINEON]
Power Field-Effect Transistor;
| 型号： | IRFH4255DTRPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor |
| 文件： | 总12页 (文件大小：557K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FastIRFET™
IRFH4255DPbF
HEXFET® Power MOSFET
Q1
25
Q2
25
VDSS
V
RDS(on) max
(@VGS = 4.5V)
4.60
10
2.10
23
m
nC
Qg (typical)
ID
30
30
A
(@TC = 25°C)
Applications
Control and Synchronous MOSFETs for synchronous buck
converters
DUAL PQFN 5X6 mm
Benefits
Features
Control and synchronous MOSFETs in one package
Increased power density
Lower switching losses
Lower conduction losses
Lower Switching Losses
Environmentally friendlier
Increased reliability
Low charge control MOSFET (10nC typical)
results in
Low RDSON synchronous MOSFET (<2.10m)
Intrinsic Schottky Diode with Low Forward Voltage on Q2
RoHS Compliant, Halogen-Free
MSL1, Industrial Qualification
Base part number
Package Type
Standard Pack
Orderable Part Number
IRFH4255DTRPbF
Form
Quantity
4000
IRFH4255DPbF
Dual PQFN 5mm x 6mm
Tape and Reel
Absolute Maximum Ratings
Parameter
Gate-to-Source Voltage
Q1 Max.
Q2 Max.
Units
VGS
± 20
V
ID @ TC = 25°C
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
64
51
105
84
ID @ TC = 70°C
ID @ TC = 25°C
A
Continuous Drain Current, VGS @ 4.5V
(Source Bonding Technology Limited)
30
30
IDM
Pulsed Drain Current
Power Dissipation
Power Dissipation
120
31
420
38
PD @TC = 25°C
PD @TC = 70°C
W
W/°C
°C
20
24
Linear Derating Factor
0.25
0.30
TJ
Operating Junction and
Storage Temperature Range
-55 to + 150
TSTG
Thermal Resistance
Parameter
Q1 Max.
Q2 Max.
Units
Junction-to-Case
4.0
20
34
24
3.3
12
31
19
RJC (Bottom)
RJC (Top)
RJA
Junction-to-Case
°C/W
Junction-to-Ambient
Junction-to-Ambient
RJA (<10s)
Notes through are on page 12
1
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IRFH4255DPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
Drain-to-Source Breakdown Voltage
Q1
Q2
Q1
25
25
–––
––– –––
––– –––
VGS = 0V, ID = 250µA
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
V
Breakdown Voltage Temp. Coefficient
22
–––
BVDSS/TJ
mV/°C
Q2
Q1
Q2
–––
23
–––
Reference to 25°C, ID = 10mA
VGS = 10V, ID = 30A
VGS = 10V, ID = 30A
––– 2.50 3.20
––– 1.20 1.50
RDS(on)
Static Drain-to-Source On-Resistance
m
Q1
Q2
Q1
Q2
Q1
––– 3.70 4.60
––– 1.65 2.10
1.1
1.1
VGS = 4.5V, ID = 30A
VGS = 4.5V, ID = 30A
Q1: VDS = VGS, ID = 35µA
Q2: VDS = VGS, ID = 100µA
Q1: VDS = VGS, ID = 35µA
VGS(th)
Gate Threshold Voltage
1.6
1.6
2.1
2.1
V
Gate Threshold Voltage Coefficient
––– -5.7 –––
VGS(th)/TJ
mV/°C
µA
Q2
––– -5.3 –––
Q2: VDS = VGS, ID = 1mA
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Q1
Q2
Q1
––– ––– 1.0
––– ––– 250
––– ––– 100
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V
VGS = 20V
Q2
Q1
Q2
––– ––– 100
––– ––– -100
––– ––– -100
VGS = 20V
IGSS
nA
S
VGS = -20V
Gate-to-Source Reverse Leakage
Forward Transconductance
VGS = -20V
gfs
Qg
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
131 ––– –––
182 ––– –––
VDS = 10V, ID = 30A
VDS = 10V, ID = 30A
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
10
23
15
35
Q1
VDS = 13V
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
2.5 –––
4.5 –––
1.6 –––
2.3 –––
3.8 –––
8.4 –––
2.1 –––
7.8 –––
5.4 –––
VGS = 4.5V, ID = 30A
nC
Q2
VDS = 13V
VGS = 4.5V, ID = 30A
––– 10.7 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
10
23
–––
–––
VDS = 16V, VGS = 0V
nC
Gate Resistance
2.4 –––
1.5 –––
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
10
10
61
43
13
27
15
26
–––
–––
–––
–––
–––
–––
–––
–––
Q1
VDS = 13V VGS = 4.5V
ID = 30A, Rg = 1.8
ns
Q2
Turn-Off Delay Time
Fall Time
VDS = 13V VGS = 4.5V
ID = 30A, Rg = 1.8
Ciss
Input Capacitance
––– 1314 –––
V
GS = 0V
Q2
Q1
Q2
Q1
Q2
––– 2877 –––
––– 365 –––
––– 907 –––
VDS = 13V
Coss
Crss
Output Capacitance
pF
ƒ = 1.0MHz
Reverse Transfer Capacitance
–––
92
–––
––– 234 –––
2
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IRFH4255DPbF
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
Q1 Max.
Q2 Max.
Units
EAS
–––
61
364
mJ
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
––– ––– 30
––– ––– 30
––– ––– 120
––– ––– 420
––– ––– 1.0
––– ––– 0.75
A
A
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
ISM
VSD
trr
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
TJ = 25°C, IS = 30A, VGS = 0V
TJ = 25°C, IS = 30A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
16
26
13
34
–––
–––
ns Q1 TJ = 25°C, IF = 30A
DD = 13V, di/dt = 235A/µs
V
Qrr
––– nC Q2 TJ = 25°C, IF = 30A
–––
VDD = 13V, di/dt = 270A/µs
3
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IRFH4255DPbF
Q2 - Synchronous FET
Q1 - Control FET
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
5.0V
4.5V
3.5V
3.1V
2.9V
2.7V
2.5V
5.0V
4.5V
3.5V
3.1V
2.9V
2.7V
2.5V
BOTTOM
BOTTOM
2.5V
1
60µs PULSE WIDTH
Tj = 25°C
60µs PULSE WIDTH
Tj = 25°C
2.5V
0.1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
5.0V
4.5V
3.5V
3.1V
2.9V
2.7V
2.5V
5.0V
4.5V
3.5V
3.1V
2.9V
2.7V
2.5V
100
10
1
BOTTOM
BOTTOM
2.5V
2.5V
60µs PULSE WIDTH
60µs PULSE WIDTH
Tj = 150°C
Tj = 150°C
0.1
1
10
100
0.1
1
10
, Drain-to-Source Voltage (V)
DS
100
V
, Drain-to-Source Voltage (V)
V
DS
Fig 3. Typical Output Characteristics
Fig 4. Typical Output Characteristics
1000
1000
100
10
100
10
1
T
= 150°C
J
T
= 25°C
T
= 150°C
J
J
T
V
= 25°C
= 15V
J
DS
V
= 15V
DS
60µs PULSE WIDTH
60µs PULSE WIDTH
0.1
1.0
1.5
2.0
2.5
3.0
3.5
4.0
1
2
3
4
V
, Gate-to-Source Voltage (V)
GS
V
, Gate-to-Source Voltage (V)
GS
Fig 6. Typical Transfer Characteristics
Fig 5. Typical Transfer Characteristics
4
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IRFH4255DPbF
Q2 - Synchronous FET
Q1 - Control FET
100000
10000
1000
100
100000
10000
1000
V
= 0V,
= C
f = 1 MHZ
V
C
= 0V,
f = 1 MHZ
GS
GS
C
C
C
+ C , C
SHORTED
= C + C , C SHORTED
iss
gs
gd
ds
iss
gs
gd ds
= C
C
= C
rss
oss
gd
= C + C
rss
gd
C
= C + C
ds
gd
oss
ds
gd
C
C
iss
C
iss
oss
C
oss
C
rss
C
rss
10
100
1
10
, Drain-to-Source Voltage (V)
100
0.1
1
10
100
V
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
Fig 8. Typical Capacitance vs. Drain-to-Source Voltage
14.0
14.0
I
= 30A
I
= 30A
D
D
12.0
10.0
8.0
12.0
10.0
8.0
V
V
= 20V
= 13V
DS
DS
V
= 20V
DS
VDS= 13V
6.0
6.0
4.0
4.0
2.0
2.0
0.0
0.0
0
5
10
15
20
25
30
0
10
Q
20
30
40
50
60
Q , Total Gate Charge (nC)
, Total Gate Charge (nC)
G
G
Fig 10. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 9. Typical Gate Charge vs. Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
OPERATION IN THIS AREA LIMITED BY R
(on)
DS
LIMITED BY R (on)
DS
100
100
10
100µsec
100µsec
Limited by package
10
1
Limited by Package
1msec
1msec
10msec
DC
1
10msec
DC
0.1
0.01
0.1
0.01
Tc = 25°C
Tj = 150°C
Single Pulse
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
DS
, Drain-to-Source Voltage (V)
Fig 11. Maximum Safe Operating Area
Fig 12. Maximum Safe Operating Area
5
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IRFH4255DPbF
Q2 - Synchronous FET
Q1 - Control FET
1.6
1.4
1.2
1.0
0.8
0.6
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
= 30A
D
I
= 30A
D
V
= 4.5V
GS
V
= 4.5V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160
-60 -40 -20
T
0
20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
, Junction Temperature (°C)
J
Fig 14. Normalized On-Resistance vs. Temperature
1000
Fig 13. Normalized On-Resistance vs. Temperature
1000
100
100
T
= 150°C
J
T
= 150°C
J
T
= 25°C
J
10
10
T
= 25°C
= 0V
J
V
V
= 0V
GS
GS
1.0
1.0
0.4
0.5
V
0.6
0.7
0.8
0.9
1.0
0.2
0.4
0.6
, Source-to-Drain Voltage (V)
SD
0.8
1.0
1.2
, Source-to-Drain Voltage (V)
V
SD
Fig 15. Typical Source-Drain Diode Forward Voltage
Fig 16. Typical Source-Drain Diode Forward Voltage
5.0
10
I
= 30A
I
= 30A
D
D
4.0
3.0
2.0
1.0
0.0
8
6
4
2
0
T = 125°C
J
T
= 125°C
J
T = 25°C
J
T
= 25°C
J
0
5
10
15
20
2
4
6
8
10 12 14 16 18 20
V
Gate -to -Source Voltage (V)
V
Gate -to -Source Voltage (V)
GS,
GS,
Fig 17. Typical On-Resistance vs. Gate Voltage
Fig 18. Typical On-Resistance vs. Gate Voltage
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IRFH4255DPbF
Q2 - Synchronous FET
Q1 - Control FET
70
60
50
40
30
20
10
0
120
100
80
60
40
20
0
Limited By Package
Limited By Package
25
50
75
100
125
150
25
50
75
100
125
150
T
, Case Temperature (°C)
C
T
C
, Case Temperature (°C)
Fig 20. Maximum Drain Current vs. Case Temperature
Fig 19. Maximum Drain Current vs. Case Temperature
2.5
2.2
2.0
1.8
2.0
1.5
I
= 1.0mA
D
1.6
1.4
1.2
1.0
I
= 35µA
D
1.0
0.5
0.0
-75 -50 -25
0
25 50 75 100 125 150
-75 -50 -25
0
25 50 75 100 125 150
T
, Temperature ( °C )
T
, Temperature ( °C )
J
J
Fig 21. Threshold Voltage vs. Temperature
Fig 22. Threshold Voltage vs. Temperature
1600
250
I
I
D
D
1400
1200
1000
800
600
400
200
0
TOP
7.7A
12A
TOP
7.9A
16A
200
150
100
50
BOTTOM 60A
BOTTOM 30A
0
25
50
75
100
125
150
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
Starting T , Junction Temperature (°C)
J
J
Fig 23. Maximum Avalanche Energy vs. Drain Current
Fig 24. Maximum Avalanche Energy vs. Drain Current
7
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July 31, 2013
IRFH4255DPbF
1000
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
Tstart =25°C (Single Pulse)
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 125°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 25. Typical Avalanche Current vs. Pulse Width (Q1)
1000
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
Tstart =25°C (Single Pulse)
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 125°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 26. Typical Avalanche Current vs. Pulse Width (Q2)
10
D = 0.50
1
0.1
0.20
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
t
, Rectangular Pulse Duration (sec)
1
Fig 27. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Q1)
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IRFH4255DPbF
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
0.01
0.001
0.0001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
t
, Rectangular Pulse Duration (sec)
1
Fig 28. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Q2)
9
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IRFH4255DPbF
Fig 29. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
I
0.01
t
p
AS
Fig 30a. Unclamped Inductive Test Circuit
Fig 30b. Unclamped Inductive Waveforms
Fig 31a. Switching Time Test Circuit
Fig 31b. Switching Time Waveforms
Id
Vds
Vgs
VDD
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 32a. Gate Charge Test Circuit
Fig 32b. Gate Charge Waveform
10
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IRFH4255DPbF
Dual PQFN 5x6 Outline “H” Package Details
C
D
4
A
INDEX AREA
(D/2xE/2)
D2
PIN#1 ID
R0.30
B
L1
A1
7x L2
8x b
8x K
D1
1.15
0.48
TOP VIEW
SIDE VIEW
1.08
0.94
BOTTOM VIEW
Dimension Table
V : Very Thin
NOTE
MINIMUM NOM INAL M AXIMUM
A
A1
b
0.80
0.00
0.30
0.90
0.02
0.40
1.00
0.05
0.50
6
D
E
e
D1
E1
D2
E2
K
6.00 BSC
5.00 BSC
1.27 BSC
2.57
2.42
4.41
0.78
4.01
0.20
1.67
2.67
4.66
1.03
4.26
---
4.56
0.93
4.16
---
L1
L2
1.77
0.50
1.87
0.60
0.40
Dual PQFN 5x6 Outline “H” Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
PART NUMBER
XXXX
XYWWX
XXXXX
(“4 or 5 digits”)
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
MARKING CODE
(Per Marking Spec)
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
For more information on board mounting, including footprint and stencil recommendation, please refer to
application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRFH4255DPbF
Dual PQFN 5x6 Outline Tape and Reel
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Qualification Information†
Industrial
Qualification level
(per JEDEC JESD47F †† guidelines )
MSL1
DUAL PQFN 5mm x 6mm
Moisture Sensitivity Level
RoHS Compliant
(per JEDEC J-STD-020D††)
Yes
†
††
Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C,
Q1: L = 0.14mH, RG = 50, IAS = 30A;
Q2: L = 0.20mH, RG = 50, IAS = 60A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
R is measured at TJ approximately 90°C.
When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:
http://www.irf.com/technical-info/appnotes/an-994.pdf
Calculated continuous current based on maximum allowable junction temperature.
Current is limited to Q1 = 30A & Q2 = 30A by source bonding technology.
Pulsed drain current is limited to 120A by source bonding technology.
Revision History
Date
Comments
01/27/2014
Update the MSL level from MSL2 to MSL1, on page 1 & 12.
Removed “redundant” information of IDSS Q1 & Q2 on page 2.
04/08/2014
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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相关型号：
IRFH450
Power Field-Effect Transistor, 13A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-210AC
INFINEON
IRFH450PBF
Power Field-Effect Transistor, 13A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-210AC
INFINEON
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