IRFH5110PBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET型号: | IRFH5110PBF |
厂家: | Infineon |
描述: | HEXFET Power MOSFET |
文件: | 总8页 (文件大小:301K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD-96294
IRFH5110PbF
HEXFET® Power MOSFET
VDS
100
V
RDS(on) max
(@VGS = 10V)
Qg (typical)
12.4
m
Ω
48
nC
RG (typical)
1.5
Ω
ID
PQFN 5X6 mm
63
A
(@Tc(Bottom) = 25°C)
Applications
• Secondary Side Synchronous Rectification
• Inverters for DC Motors
• DC-DC Brick Applications
FeaturesandBenefits
Features
Benefits
Low RDSon (< 12.4 mΩ)
Low Thermal Resistance to PCB (< 1.1°C/W)
100% Rg tested
Lower Conduction Losses
Increased Power Density
Increased Reliability
Low Profile (<0.9 mm)
results in Increased Power Density
Industry-Standard Pinout
⇒
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Orderable part number
Package Type
Standard Pack
Note
Form
Tape and Reel
Tape and Reel
Quantity
4000
IRFH5110TRPBF
IRFH5110TR2PBF
PQFN 5mm x 6mm
PQFN 5mm x 6mm
400
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Max.
100
± 20
11
Units
VDS
V
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
9.0
63
A
40
252
3.6
114
Power Dissipation
PD @TA = 25°C
PD @ TC(Bottom) = 25°C
W
W/°C
°C
Power Dissipation
Linear Derating Factor
0.029
-55 to + 150
TJ
Operating Junction and
Storage Temperature Range
TSTG
Notes through ꢀ are on page 8
www.irf.com
1
03/18/10
IRFH5110PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
100 ––– –––
––– 0.11 ––– V/°C Reference to 25°C, ID = 1.0mA
Conditions
VGS = 0V, ID = 250uA
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
V
V
∆Β
/ T
∆
J
DSS
RDS(on)
VGS(th)
∆VGS(th)
IDSS
––– 10.3 12.4
VGS = 10V, ID = 37A
mΩ
2.0
–––
–––
–––
–––
–––
286
–––
–––
–––
–––
–––
–––
–––
–––
-8.8
–––
–––
–––
4.0
V
V
DS = VGS, ID = 100µA
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– mV/°C
20
µA
V
V
V
V
V
DS = 100V, VGS = 0V
DS = 100V, VGS = 0V, TJ = 125°C
GS = 20V
250
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
nA
––– -100
GS = -20V
gfs
Qg
–––
48
–––
72
S
DS = 25V, ID = 37A
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
8.5
3.3
15
–––
–––
–––
–––
–––
–––
VDS = 50V
VGS = 10V
ID = 37A
nC
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
21
18
14
nC VDS = 16V, VGS = 0V
RG
td(on)
tr
Gate Resistance
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
1.5
7.8
9.6
22
–––
–––
–––
–––
–––
Ω
V
DD = 50V, VGS = 10V
ID = 37A
R =1.3
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
Ω
G
6.4
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 3152 –––
VGS = 0V
VDS = 25V
–––
–––
324
121
–––
–––
pF
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
93
Units
mJ
Single Pulse Avalanche Energy
EAS
IAR
Avalanche Current
37
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
D
S
Continuous Source Current
MOSFET symbol
–––
–––
–––
–––
63
(Body Diode)
Pulsed Source Current
(Body Diode)
showing the
integral reverse
A
G
ISM
252
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
–––
–––
34
1.3
51
V
TJ = 25°C, IS = 37A, VGS = 0V
ns TJ = 25°C, IF = 37A, VDD = 50V
di/dt = 500A/µs
nC
Qrr
ton
237
356
Time is dominated by parasitic Inductance
Thermal Resistance
Parameter
Typ.
–––
–––
–––
–––
Max.
1.1
15
Units
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
RθJC (Bottom)
RθJC (Top)
°C/W
Rθ
35
JA
RθJA (<10s)
22
2
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IRFH5110PbF
1000
100
10
1000
100
10
VGS
15V
10V
7.00V
5.00V
4.50V
4.25V
4.00V
3.75V
VGS
15V
10V
7.00V
5.00V
4.50V
4.25V
4.00V
3.75V
TOP
TOP
BOTTOM
BOTTOM
1
3.75V
60µs
3.75V
0.1
0.01
60µs
PULSE WIDTH
Tj = 150°C
≤
PULSE WIDTH
≤
Tj = 25°C
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
2.5
2.0
1.5
1.0
0.5
I
= 37A
D
V
= 10V
GS
100
T
= 150°C
J
10
1
T
= 25°C
J
V
= 50V
DS
≤60µs PULSE WIDTH
0.1
2.5
3
3.5
4
4.5 5.5 6.5 7
5
6
-60 -40 -20
0
20 40 60 80 100 120140 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance Vs. Temperature
Fig 3. Typical Transfer Characteristics
14
100000
V
= 0V,
= C
f = 1 MHZ
GS
I
= 37A
D
C
C
C
+ C , C
SHORTED
V
V
= 80V
= 50V
iss
gs
gd
ds
DS
DS
12
10
8
= C
rss
oss
gd
= C + C
VDS= 20V
ds
gd
10000
1000
100
C
iss
C
C
6
oss
rss
4
2
0
10
0
10
20
30
40
50
60
70
1
10
, Drain-to-Source Voltage (V)
100
Q , Total Gate Charge (nC)
V
G
DS
Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage
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3
IRFH5110PbF
1000
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R (on)
DS
T
= 150°C
J
100
10
1
100µsec
T
= 25°C
J
1msec
1
10msec
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
GS
0.1
0.1
0.2
0.4
SD
0.6
0.8
1.0
1.2
0.10
1
10
100
1000
V
, Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
65
60
55
50
45
40
35
30
25
20
15
10
5
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
I
= 1.0A
D
ID = 1.0mA
ID = 100µA
I
0
25
50
T
75
100
125
150
-75 -50 -25
0
25 50 75 100 125 150
, Case Temperature (°C)
T
J
, Temperature ( °C )
C
Fig 9. Maximum Drain Current Vs.
Fig 10. Threshold Voltage Vs. Temperature
Case (Bottom) Temperature
10
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
0.01
Notes:
SINGLE PULSE
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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IRFH5110PbF
400
350
300
250
200
150
100
50
40
30
20
10
0
I
D
I
= 37A
D
TOP
4.1A
10.1A
BOTTOM 37A
T
= 125°C
J
T
= 25°C
J
0
2
4
6
8
10 12 14 16 18 20
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
V
Gate -to -Source Voltage (V)
GS,
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
I
AS
20V
Ω
0.01
t
p
Fig 14b. Unclamped Inductive Waveforms
Fig 14a. Unclamped Inductive Test Circuit
RD
VDS
VDS
90%
VGS
D.U.T.
RG
+VDD
-
10%
VGS
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
td(on)
td(off)
tr
tf
Fig 15a. Switching Time Test Circuit
Fig 15b. Switching Time Waveforms
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5
IRFH5110PbF
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 18. Gate Charge Waveform
Fig 17. Gate Charge Test Circuit
6
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IRFH5110PbF
PQFN 5x6 Outline "B" Package Details
For footprint and stencil design recommendations, please refer to application note AN-1154 at
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 5x6 Outline "B" Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
PART NUMBER
XXXX
(“4 or 5 digits”)
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
MARKING CODE
XYWWX
XXXXX
(Per Marking Spec)
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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7
IRFH5110PbF
PQFN 5x6 Outline "B" Tape and Reel
Qualification information†
Industrial††
(per JEDEC JES D47F ††† guidelines )
MS L 1
Qualification level
Moisture Sensitivity Level
RoHS compliant
PQFN 5mm x 6mm
(per JEDEC J-ST D-020D†††
)
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.136mH, RG = 50Ω, IAS = 37A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
R is measured at TJ of approximately 90°C.
θ
ꢀ When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.03/2010
8
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