IRFH5300TR2PBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRFH5300TR2PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总8页 (文件大小：346K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD -97410
IRFH5300PbF
HEXFET® Power MOSFET
VDS
30
V
RDS(on) max
(@VGS = 10V)
Qg (typical)
1.4
m
50
1.3
nC
RG (typical)
ID
100
A
PQFN 5X6 mm
(@Tc(Bottom) = 25°C)
Applications
• OR-ing MOSFET for 12V (typical) Bus in-Rush Current
• Battery Operated DC Motor Inverter MOSFET
Features and Benefits
Features
Benefits
Low RDSon (≤ 1.4mΩ)
Low Thermal Resistance to PCB (≤ 0.5°C/W)
100% Rg tested
Lower Conduction Losses
Enable better thermal dissipation
Increased Reliability
Low Profile (≤ 0.9 mm)
results in Increased Power Density
Industry-Standard Pinout
⇒
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Orderable part number
Package Type
Standard Pack
Note
Form
Tape and Reel
Tape and Reel
Quantity
4000
IRFH5300TRPBF
IRFH5300TR2PBF
PQFN 5mm x 6mm
PQFN 5mm x 6mm
400
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Max.
30
Units
VDS
V
VGS
± 20
40
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
32
100
100
A
400
3.6
Power Dissipation
PD @TA = 25°C
PD @ TC(Bottom) = 25°C
W
Power Dissipation
250
Linear Derating Factor
Operating Junction and
0.029
-55 to + 150
W/°C
°C
TJ
TSTG
Storage Temperature Range
Notes through are on page 8
www.irf.com
1
9/17/09
IRFH5300PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
30 ––– –––
––– 0.02 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
VGS = 0V, ID = 250μA
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
V
V
/ T
J
ΔΒ DSS Δ
RDS(on)
–––
–––
1.35
–––
–––
–––
–––
–––
190
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.1
1.7
1.4
2.1
VGS = 10V, ID = 50A
mΩ
VGS = 4.5V, ID = 50A
VGS(th)
Gate Threshold Voltage
1.8
2.35
V
VDS = VGS, ID = 150μA
V
Δ
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
-6.2
–––
–––
–––
––– mV/°C
GS(th)
IDSS
5.0
μA
VDS = 24V, VGS = 0V
150
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
V
GS = 20V
VGS = -20V
DS = 15V, ID = 50A
nC VGS = 10V, VDS = 15V, ID = 50A
nA
––– -100
gfs
Qg
Qg
–––
120
50
–––
–––
75
S
V
Total Gate Charge
Qgs1
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
12
–––
–––
–––
–––
–––
–––
VDS = 15V
Qgs2
Qgd
6.5
16
VGS = 4.5V
ID = 50A
nC
Qgodr
16
See Fig.17 & 18
Qsw
23
Qoss
RG
30
nC VDS = 16V, VGS = 0V
Gate Resistance
1.3
26
Ω
–––
–––
td(on)
tr
td(off)
tf
Turn-On Delay Time
VDD = 15V, VGS = 4.5V
Rise Time
30
–––
–––
–––
ID = 50A
ns
Turn-Off Delay Time
31
RG=1.8Ω
See Fig.15
VGS = 0V
VDS = 15V
ƒ = 1.0MHz
Fall Time
13
Ciss
Coss
Crss
Input Capacitance
––– 7200 –––
––– 1360 –––
pF
Output Capacitance
Reverse Transfer Capacitance
–––
590
–––
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
–––
–––
Max.
420
50
Units
mJ
EAS
IAR
Avalanche Current
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
S
IS
Continuous Source Current
MOSFET symbol
–––
–––
––– 100
(Body Diode)
Pulsed Source Current
showing the
integral reverse
A
G
ISM
–––
400
(Body Diode)
p-n junction diode.
VSD
trr
Diode Forward Voltage
–––
–––
–––
–––
34
1.0
51
V
TJ = 25°C, IS = 50A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns TJ = 25°C, IF = 50A, VDD = 15V
di/dt = 200A/μs
nC
Qrr
ton
68
100
Time is dominated by parasitic Inductance
Thermal Resistance
Parameter
Typ.
–––
–––
–––
–––
Max.
0.5
15
Units
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
RθJC (Bottom)
RθJC (Top)
RθJA
°C/W
35
RθJA (<10s)
21
2
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IRFH5300PbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
BOTTOM
BOTTOM
2.7V
1
2.7V
1
≤ 60μs PULSE WIDTH
≤ 60μs PULSE WIDTH
Tj = 25°C
Tj = 150°C
1
0.1
10
100
0.1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
100
10
2.0
1.5
1.0
0.5
I
= 50A
D
V
= 10V
GS
T
= 150°C
J
T
V
= 25°C
= 15V
J
1
0.1
0.01
DS
≤ 60μs PULSE WIDTH
1.0
2.0
3.0
4.0
5.0
-60 -40 -20
T
0
20 40 60 80 100 120 140 160
V
, Gate-to-Source Voltage (V)
GS
, Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance Vs. Temperature
Fig 3. Typical Transfer Characteristics
100000
10000
1000
14
V
C
= 0V,
f = 1 MHZ
GS
I = 50A
D
= C + C , C SHORTED
iss
gs
gd ds
V
V
= 24V
= 15V
DS
DS
12
10
8
C
C
= C
rss
oss
gd
= C + C
ds
gd
Ciss
6
Coss
Crss
4
2
0
100
0
40
80
120
160
1
10
, Drain-to-Source Voltage (V)
100
Q
Total Gate Charge (nC)
G
V
DS
Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage
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3
IRFH5300PbF
1000
1000
100
10
OPERATION IN THIS AREA LIMITED BY R (on)
DS
100μsec
T
= 150°C
100
10
1
J
1msec
T
= 25°C
J
10msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
1.4
GS
0.1
0.1
0.2
0.4
V
0.6
0.8
1.0
1.2
1.6
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
3.0
2.5
2.0
1.5
1.0
0.5
350
I
I
I
I
= 1.0A
LIMITED BY PACKAGE
300
D
D
D
D
= 1.0mA
= 500μA
= 150μA
250
200
150
100
50
0
25
50
75
100
125
150
175
-75 -50 -25
0
J
25 50 75 100 125 150 175
, Temperature ( °C )
T , Case Temperature (°C)
C
T
Fig 9. Maximum Drain Current Vs.
Fig 10. Threshold Voltage Vs. Temperature
Case (Bottom) Temperature
1
D = 0.50
0.1
0.01
0.20
0.10
0.05
0.02
0.01
Notes:
SINGLE PULSE
( THERMAL RESPONSE )
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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IRFH5300PbF
2000
1600
1200
800
400
0
6
5
4
3
2
1
0
I
I
= 50A
D
D
TOP
15A
21A
BOTTOM 50A
T
= 125°C
J
T
= 25°C
J
2
4
6
8
10 12 14 16 18 20
25
50
75
100
125
150
V
, Gate-to-Source Voltage (V)
GS
Starting T , Junction Temperature (°C)
J
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
I
AS
20V
Ω
0.01
t
p
Fig 14b. Unclamped Inductive Waveforms
Fig 14a. Unclamped Inductive Test Circuit
RD
VDS
VDS
90%
VGS
D.U.T.
RG
+VDD
-
10%
VGS
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
td(on)
td(off)
tr
tf
Fig 15a. Switching Time Test Circuit
Fig 15b. Switching Time Waveforms
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5
IRFH5300PbF
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 18. Gate Charge Waveform
Fig 17. Gate Charge Test Circuit
6
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IRFH5300PbF
PQFN 5x6 Outline "B" Package Details
For footprint and stencil design recommendations, please refer to application note AN-1154 at
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 5x6 Outline "B" Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
PART NUMBER
XXXX
(“4 or 5 digits”)
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
MARKING CODE
XYWWX
XXXXX
(Per Marking Spec)
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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7
IRFH5300PbF
PQFN Tape and Reel
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Qualification information†
Industrial††
(per JEDEC JES D47F ††† guidelines )
Qualification level
MS L 1
Moisture Sensitivity Level
RoHS compliant
PQFN 5mm x 6mm
(per JEDEC J-ST D-020D†††
)
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.337mH, RG = 25Ω, IAS = 50A.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
R is measured at TJ of approximately 90°C.
θ
ꢀ When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Calculated continuous current based on maximum allowable junction temperature. Package is limited to 100A by production test capability
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.9/2009
8
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相关型号：
IRFH5301
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
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