IRFH7446PBF [INFINEON]
HEXFETPower MOSFET; ?? HEXFET功率MOSFET![IRFH7446PBF](http://pdffile.icpdf.com/pdf1/p00192/img/icpdf/IRFH74_1086326_icpdf.jpg)
型号: | IRFH7446PBF |
厂家: | ![]() |
描述: | HEXFETPower MOSFET |
文件: | 总11页 (文件大小:267K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
![](http://public.icpdf.com/style/img/ads.jpg)
StrongIRFET
IRFH7446PbF
HEXFET® Power MOSFET
Applications
l Brushed Motor drive applications
l BLDC Motor drive applications
l PWM Inverterized topologies
l Battery powered circuits
l Half-bridge and full-bridge topologies
l Synchronous rectifier applications
l Resonant mode power supplies
l OR-ing and redundant power switches
l DC/DC and AC/DC converters
VDSS
RDS(on) typ.
max.
40V
2.5m
3.3m
117A
ID (Silicon Limited)
ID
85A
(Package Limited)
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l RoHS Compliant containing no Lead, no Bromide,
and no Halogen
PQFN 5X6 mm
Base Part Number
Package Type
Standard Pack
Form
Tape and Reel
Tape and Reel
Orderable part number
Quantity
4000
IRFH7446PBF
PQFN 5mm x 6mm
PQFN 5mm x 6mm
IRFH7446TRPBF
IRFH7446TR2PBF
400
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
125
100
75
50
25
0
I
= 50A
D
Limited By Package
T
= 125°C
J
T
= 25°C
J
4
6
8
10
12 14 16
18 20
25
50
T
75
100
125
150
, Case Temperature (°C)
C
V
Gate -to -Source Voltage (V)
GS,
Fig 2. Maximum Drain Current vs. Case Temperature
Fig 1. Typical On-Resistance vs. Gate Voltage
www.irf.com © 2012 International Rectifier
October 23, 2012
1
IRFH7446PbF
Absolute Maximum Ratings
Symbol
Parameter
Max.
117
Units
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
74
A
85
468
78
PD @TC = 25°C
Maximum Power Dissipation
W
0.63
Linear Derating Factor
W/°C
V
± 20
VGS
TJ
Gate-to-Source Voltage
-55 to + 150
Operating Junction and
°C
TSTG
Storage Temperature Range
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy
78
mJ
EAS (tested)
IAR
Single Pulse Avalanche Energy Tested Value
Avalanche Current
153
See Fig. 14, 15, 22a, 22b
A
Repetitive Avalanche Energy
EAR
mJ
Thermal Resistance
Symbol
Parameter
Typ.
–––
–––
–––
–––
Max.
1.6
31
Units
Junction-to-Case
RJC (Bottom)
Junction-to-Case
RJC (Top)
°C/W
Junction-to-Ambient
Junction-to-Ambient
35
R
JA
23
RJA (<10s)
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
40
–––
–––
V
VGS = 0V, ID = 250μA
V(BR)DSS/TJ
RDS(on)
––– 0.032 –––
V/°C Reference to 25°C, ID = 1.0mA
m VGS = 10V, ID = 50A
m VGS = 6.0V, ID = 50A
–––
–––
2.2
2.5
3.8
3.3
–––
3.9
VGS(th)
IDSS
Gate Threshold Voltage
–––
–––
–––
–––
–––
1.5
V
VDS = VGS, ID = 100μA
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
1.0
μA VDS = 40V, VGS = 0V
150
100
-100
–––
V
DS = 40V, VGS = 0V, TJ = 125°C
IGSS
RG
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
nA VGS = 20V
VGS = -20V
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Current is limited to 71A by source bond technology.
Note that current limitations arising from heating of the
ꢀ Pulse width 400μs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS
.
device leads may occur with some lead mounting arrangements.
(Refer to AN-1140)
.
Repetitive rating; pulse width limited by max. junction
temperature.
When mounted on 1 inch square 2 oz copper pad on 1.5 x 1.5 in. board of
FR-4 material.
R is measured at TJ approximately 90°C.
This value determined from sample failure population,
Limited by TJmax, starting TJ = 25°C, L = 0.062mH
RG = 50, IAS = 50A, VGS =10V.
ISD 50A, di/dt 1123A/μs, VDD V(BR)DSS, TJ 150°C.
starting TJ = 25°C, L= 0.062mH, RG = 50, IAS = 50A, VGS =10V.
www.irf.com © 2012 International Rectifier
October 23, 2012
2
IRFH7446PbF
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Forward Transconductance
159
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
VDS = 10V, ID = 50A
Total Gate Charge
65
98
nC ID = 50A
VDS =20V
Qgs
Qgd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
16
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
23
VGS = 10V
Qsync
td(on)
tr
42
ID = 50A, VDS =0V, VGS = 10V
11
ns VDD = 20V
ID = 30A
Rise Time
37
td(off)
tf
Turn-Off Delay Time
33
RG = 2.7
VGS = 10V
Fall Time
26
Ciss
Coss
Crss
Input Capacitance
3174
479
332
637
656
pF VGS = 0V
Output Capacitance
V
DS = 25V
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
ƒ = 1.0 MHz
C
oss eff. (ER)
VGS = 0V, VDS = 0V to 32V
VGS = 0V, VDS = 0V to 32V
Coss eff. (TR)
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
D
S
IS
Continuous Source Current
–––
–––
85
A
A
V
MOSFET symbol
(Body Diode)
Pulsed Source Current
showing the
integral reverse
G
ISM
–––
–––
468
(Body Diode)
p-n junction diode.
TJ = 25°C, IS = 50A, VGS = 0V
VSD
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
–––
–––
–––
–––
–––
–––
–––
0.9
2.6
16
1.3
–––
–––
–––
–––
–––
–––
dv/dt
trr
V/ns TJ = 150°C, IS = 50A, VDS = 40V
ns TJ = 25°C
TJ = 125°C
VR = 34V,
18
IF = 50A
di/dt = 100A/μs
Qrr
Reverse Recovery Charge
Reverse Recovery Current
5.0
6.9
0.50
nC TJ = 25°C
TJ = 125°C
IRRM
A
TJ = 25°C
3
www.irf.com © 2012 International Rectifier
October 23, 2012
IRFH7446PbF
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
BOTTOM
BOTTOM
4.5V
4.5V
60μs PULSE WIDTH
Tj = 150°C
60μs PULSE WIDTH
Tj = 25°C
1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 3. Typical Output Characteristics
Fig 4. Typical Output Characteristics
1000
100
10
1.8
I
= 50A
D
V
= 10V
GS
1.6
1.4
1.2
1.0
0.8
0.6
T
= 150°C
J
T
= 25°C
J
V
= 10V
DS
60μs PULSE WIDTH
1.0
3
4
5
6
7
8
-60 -40 -20
0
20 40 60 80 100 120140 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 6. Normalized On-Resistance vs. Temperature
Fig 5. Typical Transfer Characteristics
100000
10000
1000
14.0
V
= 0V,
= C
f = 1 MHZ
GS
I = 50A
D
C
C
C
+ C , C
SHORTED
ds
iss
gs
gd
12.0
= C
rss
oss
gd
= C + C
V
V
= 32V
= 20V
DS
DS
ds
gd
10.0
8.0
6.0
4.0
2.0
0.0
C
iss
C
oss
rss
C
100
1
10
, Drain-to-Source Voltage (V)
100
0
10 20 30 40 50 60 70 80 90
V
Q , Total Gate Charge (nC)
G
DS
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
www.irf.com © 2012 International Rectifier
Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage
October 23, 2012
4
IRFH7446PbF
1000
100
10
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 150°C
100μsec
J
1msec
T
= 25°C
J
10msec
DC
1
Tc = 25°C
Tj = 150°C
V
= 0V
GS
Single Pulse
1.0
0.1
0.0
0.4
0.8
1.2
1.6
2.0
0.1
1
10
100
V
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 10. Maximum Safe Operating Area
Fig 9. Typical Source-Drain Diode
Forward Voltage
0.50
50
48
46
44
42
40
Id = 1.0mA
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
-5
0
5
10 15 20 25 30 35 40 45
Drain-to-Source Voltage (V)
-60 -40 -20
0
20 40 60 80 100 120140 160
T , Temperature ( °C )
J
V
DS,
Fig 11. Drain-to-Source Breakdown Voltage
Fig 12. Typical COSS Stored Energy
140
120
100
80
V
V
V
V
V
= 5.0V
GS
= 6.0V
= 7.0V
= 8.0V
=10V
GS
GS
GS
GS
60
40
20
0
0
100
200
300
400
500
I , Drain Current (A)
D
Fig 13. Typical On-Resistance vs. Drain Current
www.irf.com © 2012 International Rectifier
5
October 23, 2012
IRFH7446PbF
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
Tstart =25°C (Single Pulse)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 125°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
80
70
60
50
40
30
20
10
0
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
TOP
BOTTOM 1.0% Duty Cycle
= 50A
Single Pulse
I
D
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
25
50
75
100
125
150
EAS (AR) = PD (ave)·tav
Starting T , Junction Temperature (°C)
J
Fig 16. Maximum Avalanche Energy vs. Temperature
www.irf.com © 2012 International Rectifier
October 23, 2012
6
IRFH7446PbF
4.5
4.0
3.5
3.0
2.5
2.0
1.5
7
6
5
4
3
2
1
0
I = 30A
F
V
= 34V
R
T = 25°C
J
T = 125°C
J
I
I
I
= 100μA
= 1.0mA
= 1.0A
D
D
D
0
200
400
600
800
1000
-75 -50 -25
0
25 50 75 100 125 150
T , Temperature ( °C )
di /dt (A/μs)
F
J
Fig. 18 - Typical Recovery Current vs. dif/dt
Fig 17. Threshold Voltage vs. Temperature
7
100
I = 50A
F
I = 30A
F
6
5
4
3
2
1
0
V
= 34V
V
= 34V
R
R
80
60
40
20
0
T = 25°C
T = 25°C
J
J
T = 125°C
J
T = 125°C
J
0
200
400
600
800
1000
0
200
400
600
800
1000
di /dt (A/μs)
di /dt (A/μs)
F
F
Fig. 19 - Typical Recovery Current vs. dif/dt
Fig. 20 - Typical Stored Charge vs. dif/dt
100
I = 50A
F
V
= 34V
R
80
60
40
20
0
T = 25°C
J
T = 125°C
J
0
200
400
600
800
1000
di /dt (A/μs)
F
Fig. 21 - Typical Stored Charge vs. dif/dt
www.irf.com © 2012 International Rectifier
7
October 23, 2012
IRFH7446PbF
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
-
*
=10V
V
GS
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Inductor Current
I
SD
Ripple 5%
* VGS = 5V for Logic Level Devices
Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
VGS
0.01
t
p
I
AS
Fig 22b. Unclamped Inductive Waveforms
Fig 22a. Unclamped Inductive Test Circuit
RD
VDS
V
DS
90%
VGS
D.U.T.
RG
+
VDD
-
VGS
10%
Pulse Width µs
Duty Factor
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 23a. Switching Time Test Circuit
Fig 23b. Switching Time Waveforms
Id
Current Regulator
Same Type as D.U.T.
Vds
Vgs
50K
.2F
12V
.3F
+
V
DS
D.U.T.
-
Vgs(th)
V
GS
3mA
I
I
D
G
Qgs1
Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 24a. Gate Charge Test Circuit
www.irf.com © 2012 International Rectifier
Fig 24b. Gate Charge Waveform
October 23, 2012
8
IRFH7446PbF
PQFN 5x6 Outline "E" Package Details
For more information on board mounting, including footprint and stencil recommendation, please refer to
application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 5x6 Outline "E" Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
PART NUMBER
XXXX
XYWWX
XXXXX
(“4 or 5 digits”)
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
MARKING CODE
(Per Marking Spec)
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
9
www.irf.com © 2012 International Rectifier
October 23, 2012
IRFH7446PbF
PQFN 5x6 Outline "E" Tape and Reel
NOTE: Controlling dimensions in mm Std reel quantity is 4000 parts.
REEL DIMENSIONS
STANDARD OPTION (QTY 4000)
TR1 OPTION (QTY 400)
METRIC
MAX
IMPERIAL
METRIC
MAX
178.5
21.5
13.8
2.3
IMPERIAL
MIN
MIN
MAX
7.028
0.846
0.543
0.091
2.598
CODE
MIN
MAX
13.011 177.5
MIN
A
B
C
D
E
F
12.972
0.823
0.504
0.067
3.819
6.988
0.823
0.520
0.075
2.350
329.5 330.5
20.9
12.8
1.7
0.846
0.532
0.091
3.898
20.9
13.2
1.9
21.5
13.5
2.3
97
99
65
66
Ref
13
17.4
14.5
Ref
13
12
G
0.512
0.512
0.571
0.571
14.5
www.irf.com © 2012 International Rectifier
October 23, 2012
10
IRFH7446PbF
Qualification information†
Industrial
Qualification level
(per JEDE C JES D47F guidelines) ††
MS L1
Moisture Sensitivity Level
RoHS compliant
PQFN 5mm x 6mm
(per JE DE C J-S TD-020D††
)
Yes
Qualification standards can be found at International Rectifiers web site: http://www.irf.com/product-info/reliability/
Applicable version of JEDEC standard at the time of product release.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
11
www.irf.com © 2012 International Rectifier
October 23, 2012
相关型号:
![](http://pdffile.icpdf.com/pdf2/p00363/img/page/IRFH7545_2220641_files/IRFH7545_2220641_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00363/img/page/IRFH7545_2220641_files/IRFH7545_2220641_2.jpg)
IRFH7545
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
INFINEON
©2020 ICPDF网 联系我们和版权申明