IRFH7545 [INFINEON]
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. ;
| 型号： | IRFH7545 |
| 厂家： | 
Infineon |
| 描述： | The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. |
| 文件： | 总11页 (文件大小：563K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
StrongIRFET™
IRFH7545PbF
HEXFET® Power MOSFET
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
VDSS
60V
RDS(on) typ.
4.3m
5.2m
85A
max
ID
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
PQFN 5 x 6 mm
Base part number
Package Type
Standard Pack
Form
Orderable Part Number
Quantity
IRFH7545PbF
PQFN 5mm x 6mm
Tape and Reel
4000
IRFH7545TRPbF
20
15
10
5
100
80
60
40
20
0
I
= 51A
D
T
T
= 125°C
= 25°C
J
J
0
2
4
6
8
10 12 14 16 18 20
25
50
75
100
125
150
T
, Case Temperature (°C)
V
Gate -to -Source Voltage (V)
C
GS,
Fig 2. Maximum Drain Current vs. Case Temperature
Fig 1. Typical On-Resistance vs. Gate Voltage
1
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IRFH7545PbF
Absolute Maximum Rating
Symbol
Parameter
Max.
85
Units
ID @ TC(Bottom) = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 10V
54
A
IDM
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
340
83
PD @TC = 25°C
W
W/°C
V
0.67
± 20
VGS
Gate-to-Source Voltage
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 150
°C
Avalanche Characteristics
EAS (Thermally limited)
EAS (Thermally limited)
IAR
102
160
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
mJ
See Fig 15, 16, 23a, 23b
EAR
Repetitive Avalanche Energy
Thermal Resistance
Symbol
RJC (Bottom)
RJC (Top)
RJA
Parameter
Junction-to-Case
Typ.
–––
–––
–––
–––
Max.
1.5
22
Units
Junction-to-Case
°C/W
Junction-to-Ambient
Junction-to-Ambient
34
RJA (<10s)
23
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
60
––– –––
V
VGS = 0V, ID = 250µA
–––
49
––– mV/°C Reference to 25°C, ID = 1mA
V(BR)DSS/TJ
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
2.1 –––
––– –––
4.3
6.0
5.2
–––
3.7
1.0
VGS = 10V, ID = 51A
VGS = 6.0V, ID = 26A
VDS = VGS, ID = 100µA
m
V
VGS(th)
IDSS
Gate Threshold Voltage
Drain-to-Source Leakage Current
µA VDS =60 V, VGS = 0V
––– ––– 150
––– ––– 100
––– ––– -100
V
DS =60V,VGS = 0V,TJ =125°C
IGSS
RG
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
nA VGS = 20V
VGS = -20V
–––
2.5
–––
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 78µH, RG = 50, IAS = 51A, VGS =10V.
ISD 51A, di/dt 1212A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS
.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS
.
R is measured at TJ approximately 90°C.
Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 18A, VGS =10V.
When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:
http://www.irf.com/technical-info/appnotes/an-994.pdf
2
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IRFH7545PbF
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Parameter
Forward Transconductance
Total Gate Charge
Min.
140
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
–––
73
–––
110
–––
–––
–––
–––
–––
S
VDS = 10V, ID = 51A
Qg
ID = 51A
Qgs
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg – Qgd)
Turn-On Delay Time
19
VDS = 30V
VGS = 10V
nC
Qgd
22
Qsync
td(on)
tr
51
8.6
26
VDD = 30V
ID = 51A
Rise Time
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
–––
–––
–––
43
16
–––
–––
–––
–––
–––
RG= 2.7
V
GS = 10V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
3890
365
220
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig.7
pF
Effective Output Capacitance
(Energy Related)
Coss eff.(ER)
–––
–––
370
470
–––
–––
VGS = 0V, VDS = 0V to 48V
VGS = 0V, VDS = 0V to 48V
Coss eff.(TR)
Output Capacitance (Time Related)
Diode Characteristics
Symbol
Parameter
Min.
Typ. Max. Units
Conditions
D
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
MOSFET symbol
showing the
integral reverse
p-n junction diode.
IS
–––
–––
85
G
A
S
ISM
–––
–––
–––
–––
340
1.2
VSD
Diode Forward Voltage
V
TJ = 25°C,IS = 51A,VGS = 0V
dv/dt
Peak Diode Recovery dv/dt
–––
–––
–––
–––
–––
8.1
32
34
30
38
––– V/ns TJ = 150°C,IS = 51A,VDS = 60V
–––
–––
–––
–––
TJ = 25°C
VDD = 51V
IF = 51A,
trr
Reverse Recovery Time
ns
TJ = 125°C
TJ = 25°C di/dt = 100A/µs
Qrr
Reverse Recovery Charge
Reverse Recovery Current
nC
A
TJ = 125°C
IRRM
–––
1.7
–––
TJ = 25°C
3
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IRFH7545PbF
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
BOTTOM
BOTTOM
4.5V
4.5V
60µs
Tj = 25°C
PULSE WIDTH
60µs
Tj = 150°C
PULSE WIDTH
1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 4. Typical Output Characteristics
Fig 3. Typical Output Characteristics
2.4
2.0
1.6
1.2
0.8
0.4
1000
100
10
I
= 51A
D
V
= 10V
GS
T
= 150°C
T
= 25°C
J
J
1
V
= 25V
DS
60µs PULSE WIDTH
0.1
-60 -40 -20
T
0
20 40 60 80 100 120 140 160
2
3
4
5
6
7
, Junction Temperature (°C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 6. Normalized On-Resistance vs. Temperature
Fig 5. Typical Transfer Characteristics
100000
10000
1000
14.0
V
C
= 0V,
f = 1 MHZ
GS
I
= 51A
V
= C + C , C SHORTED
D
iss
gs
gd ds
12.0
10.0
8.0
C
= C
rss
gd
= 48V
= 30V
DS
C
= C + C
oss
ds
gd
V
DS
VDS= 12V
C
iss
6.0
C
oss
4.0
C
rss
2.0
100
0.0
0.1
1
10
100
0
20
40
60
80
100
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 8. Typical Gate Charge vs.
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
Gate-to-Source Voltage
4
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IRFH7545PbF
1000
100
10
100µsec
1msec
100
10
1
OPERATION IN THIS
AREA LIMITED BY R (on)
T
= 150°C
T
= 25°C
J
J
DS
10msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
DC
V
= 0V
GS
0.1
0.1
0.1
1
10
0.1
0.4
0.7
1.0
1.3
1.6
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 10. Maximum Safe Operating Area
Fig 9. Typical Source-Drain Diode Forward Voltage
0.6
78
Id = 1.0mA
76
74
72
70
68
66
64
0.5
0.4
0.3
0.2
0.1
0.0
0
10
20
30
40
50
60
-60 -40 -20
0
T
20 40 60 80 100 120 140 160
, Temperature ( °C )
V
Drain-to-Source Voltage (V)
J
DS,
Fig 11. Drain-to-Source Breakdown Voltage
Fig 12. Typical Coss Stored Energy
20.0
VGS = 5.5V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS = 10V
15.0
10.0
5.0
0.0
0
50
I
100
150
200
, Drain Current (A)
D
Fig 13. Typical On-Resistance vs. Drain Current
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IRFH7545PbF
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
Tstart =25°C (Single Pulse)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 125°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Avalanche Current vs. Pulse Width
120
100
80
60
40
20
0
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1.Avalanche failures assumption:
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
I
= 51A
D
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
23a, 23b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
25
50
75
100
125
150
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
I
av = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)· av
t
Fig 16. Maximum Avalanche Energy vs. Temperature
6
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IRFH7545PbF
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
12
9
I
= 34A
= 51V
F
V
R
T = 25°C
J
T = 125°C
J
6
ID = 100µA
ID = 250µA
ID = 1.0mA
ID = 1.0A
3
0
-75 -50 -25
T
0
25 50 75 100 125 150
0
200
400
600
800
1000
, Temperature ( °C )
di /dt (A/µs)
J
F
Fig 17. Threshold Voltage vs. Temperature
Fig 18. Typical Recovery Current vs. dif/dt
12
200
I
= 51A
= 51V
I
= 34A
= 51V
F
F
175
150
125
100
75
V
V
R
R
T = 25°C
T = 25°C
J
J
9
6
3
0
T = 125°C
J
T = 125°C
J
50
25
0
200
400
600
800
1000
0
200
400
600
800
1000
di /dt (A/µs)
di /dt (A/µs)
F
F
Fig 19. Typical Recovery Current vs. dif/dt
Fig 20. Typical Stored Charge vs. dif/dt
200
I
= 51A
= 51V
F
175
150
125
100
75
V
R
T = 25°C
J
T = 125°C
J
50
25
0
200
400
600
800
1000
di /dt (A/µs)
F
Fig 21. Typical Stored Charge vs. dif/dt
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IRFH7545PbF
Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
0.01
I
t
p
AS
Fig 23a. Unclamped Inductive Test Circuit
Fig 23b. Unclamped Inductive Waveforms
Fig 24a. Switching Time Test Circuit
Fig 24b. Switching Time Waveforms
Id
Vds
Vgs
VDD
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 25b. Gate Charge Waveform
Fig 25a. Gate Charge Test Circuit
8
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IRFH7545PbF
PQFN 5x6 Outline "E" Package Details
For more information on board mounting, including footprint and stencil recommendation, please refer to application note
AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 5x6 Outline "E" Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
PART NUMBER
XXXX
(“4 or 5 digits”)
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
MARKING CODE
XYWWX
XXXXX
(Per Marking Spec)
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRFH7545PbF
PQFN Tape and Reel
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Qualification Information†
Industrial
Qualification Level
(per JEDEC JESD47F†† guidelines)
MSL1
PQFN 5mm x 6mm
Moisture Sensitivity Level
RoHS Compliant
(per JEDEC J-STD-020D††)
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release.
Revision History
Date
Comments
8/21/2014
Updated data sheet with latest PQFN Tape and Reel on page 10.
Updated EAS (L =1mH) = 160mJ on page 2
Updated note 8 “Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 18A, VGS =10V” on page 2
11/7/2014
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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IMPORTANT NOTICE
The information given in this document shall in no For further information on the product, technology,
event be regarded as a guarantee of conditions or delivery terms and conditions and prices please
characteristics (“Beschaffenheitsgarantie”) .
contact your nearest Infineon Technologies office
(www.infineon.com).
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
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