IRFH7923PBF [INFINEON]
HEXFET㈢ Power MOSFET; HEXFET㈢功率MOSFET
| 型号： | IRFH7923PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET㈢ Power MOSFET |
| 文件： | 总9页 (文件大小：216K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96139
IRFH7923PbF
HEXFET® Power MOSFET
Applications
l
HighFrequencyPoint-of-LoadSynchronousBuck
Converter for Applications in Neworking &
Computing Systems
VDSS
30V
RDS(on) max
Qg
8.7m @VGS = 10V
8.7nC
l
Optimized for Control FET Applications
Benefits
S
S
l
l
l
Very low RDS(ON) at 4.5V VGS
Low Gate Charge
Fully Characterized Avalanche Voltage and
D
D
D
D
S
G
Current
l
l
l
l
l
100% Tested for RG
Lead-Free (Qualified up to 260°C Reflow)
RoHS compliant (Halogen Free)
Low Thermal Resistance
PQFN
Large Source Lead for more reliable Soldering
Absolute Maximum Ratings
Parameter
Max.
30
Units
V
VDS
Drain-to-Source Voltage
V
Gate-to-Source Voltage
± 20
15
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
I
@ TA = 25°C
D
D
D
@ TA = 70°C
@ TC = 25°C
12
33
A
120
3.0
1.9
DM
Power Dissipation
P
P
@TA = 25°C
@TA = 70°C
W
D
D
Power Dissipation
Linear Derating Factor
Operating Junction and
0.02
-55 to + 150
W/°C
°C
T
J
T
Storage Temperature Range
STG
Thermal Resistance
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
–––
Max.
8.3
Units
°C/W
RθJC
RθJA
–––
42
Notes through ꢀ are on page 9
www.irf.com
1
3/3/08
IRFH7923PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
30 ––– –––
Conditions
VGS = 0V, ID = 250µA
BVDSS
∆Β
V
∆
V
DSS/ TJ
Breakdown Voltage Temp. Coefficient ––– 0.024 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
1.35
–––
–––
–––
–––
–––
29
6.8
9.3
1.8
-5.8
–––
–––
–––
–––
–––
8.7
1.8
1.1
2.7
3.1
3.8
4.9
8.7
VGS = 10V, ID = 15A
Ω
m
11.9
2.35
VGS = 4.5V, ID = 12A
VDS = VGS, ID = 25µA
VDS = 24V, VGS = 0V
VGS(th)
Gate Threshold Voltage
V
∆
VGS(th)
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– mV/°C
IDSS
1.0
µA
150
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
nA
VGS = 20V
VGS = -20V
-100
gfs
Qg
–––
13
S
VDS = 15V, ID = 12A
–––
–––
–––
–––
–––
–––
–––
Qgs1
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
–––
–––
–––
–––
–––
–––
VDS = 15V
Qgs2
Qgd
VGS = 4.5V
ID = 12A
nC
Qgodr
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
See Fig.17 & 18
Qsw
Qoss
Output Charge
nC VDS = 16V, VGS = 0V
RG
td(on)
tr
Gate Resistance
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
2.0
7.1
8.7
8.6
4.9
Ω
3.0
–––
V
DD = 15V, VGS = 4.5V
–––
–––
–––
ID = 12A
ns
td(off)
tf
Ω
Turn-Off Delay Time
Fall Time
RG=1.8
See Fig.15
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 1095 –––
V
GS = 0V
–––
–––
235
110
–––
–––
VDS = 15V
pF
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
26
12
Units
mJ
Single Pulse Avalanche Energy
EAS
IAR
Avalanche Current
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
IS
Continuous Source Current
MOSFET symbol
–––
–––
3.7
(Body Diode)
Pulsed Source Current
showing the
integral reverse
A
G
ISM
–––
–––
120
S
(Body Diode)
p-n junction diode.
VSD
trr
Diode Forward Voltage
–––
–––
–––
–––
12
1.0
18
17
V
T = 25°C, I = 12A, V = 0V
J S GS
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T = 25°C, I = 12A, VDD = 15V
J F
Qrr
ton
di/dt = 300A/µs
11
nC
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFH7923PbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
BOTTOM
BOTTOM
1
2.3V
1
2.3V
0.1
0.01
60µs PULSE WIDTH
Tj = 150°C
≤
60µs PULSE WIDTH
Tj = 25°C
≤
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
2.0
I
= 15A
D
V
= 10V
GS
100
10
1
1.5
1.0
0.5
T
= 150°C
J
T
= 25°C
J
V
= 15V
DS
≤
60µs PULSE WIDTH
0.1
1
2
3
4
5
6
-60 -40 -20
0
20 40 60 80 100 120140 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
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3
IRFH7923PbF
10000
14.0
12.0
10.0
8.0
V
= 0V,
= C
f = 1 MHZ
GS
I = 12A
D
C
C
C
+ C , C
SHORTED
ds
iss
gs
gd
= C
V
V
= 24V
= 15V
rss
oss
gd
DS
DS
= C + C
ds
gd
C
iss
1000
100
10
C
oss
6.0
C
rss
4.0
2.0
0.0
1
10
, Drain-to-Source Voltage (V)
100
0
5
10
15
20
25
V
Q , Total Gate Charge (nC)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100µsec
1msec
T
= 150°C
J
10msec
T
= 25°C
J
1.00
0.10
1
T
= 25°C
A
Tj = 150°C
Single Pulse
V
= 0V
1.2
GS
0.1
0.2
0.4
V
0.6
0.8
1.0
0
1
10
100
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRFH7923PbF
16
14
12
10
8
2.2
2.0
1.8
1.6
1.4
1.2
1.0
I
= 25µA
D
6
4
2
0
25
50
75
100
125
150
-75 -50 -25
0
25 50 75 100 125 150
T
J
, Junction Temperature (°C)
T , Temperature ( °C )
J
Fig 9. Maximum Drain Current Vs.
Fig 10. Threshold Voltage Vs. Temperature
Ambient Temperature
100
D = 0.50
10
1
0.20
0.10
0.05
0.02
0.01
R1
R1
R2
R2
R3
R3
R4
R4
R5
R5
Ri (°C/W) τi (sec)
2.295027 0.000402
τJ
τa
τJ
τ1
7.222539 0.013524
10.88056 0.33841
11.60807 4.926
9.99673 63.0
0.1
τ
τ
3τ3
τ4
τ5
2τ2
τ1
τ4
τ5
Ci= τiRi
SINGLE PULSE
( THERMAL RESPONSE )
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRFH7923PbF
25
120
100
80
60
40
20
0
I
D
I
= 15A
D
TOP
2.32A
3.30A
20
15
BOTTOM 12.0A
T
= 125°C
J
10
T
= 25°C
J
5
2
4
6
8
10 12 14 16 18 20
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
V
Gate -to -Source Voltage (V)
GS,
Fig 12. On-Resistance vs. Gate Voltage
Fig 13. Maximum Avalanche Energy
vs. Drain Current
RD
VDS
15V
VGS
D.U.T.
RG
DRIVER
+
L
+VDD
V
DS
-
VGS
PulseWidth ≤ 1 µs
DutyFactor≤ 0.1
D.U.T
AS
R
G
V
DD
-
I
A
20V
Ω
0.01
t
p
Fig 15a. Switching Time Test Circuit
Fig 14a. Unclamped Inductive Test Circuit
V
(BR)DSS
VDS
t
p
90%
10%
VGS
td(on)
td(off)
tr
tf
I
AS
Fig 15b. Switching Time Waveforms
Fig 14b. Unclamped Inductive Waveforms
6
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IRFH7923PbF
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
-
*
=10V
V
GS
CircuitLayoutConsiderations
• LowStrayInductance
• Ground Plane
• LowLeakageInductance
Current Transformer
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dtcontrolledbyRG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Current Regulator
Id
Vds
Same Type as D.U.T.
Vgs
50KΩ
.2µF
.3µF
12V
+
V
DS
D.U.T.
-
Vgs(th)
V
GS
3mA
I
I
Qgs1
Qgs2
Qgd
Qgodr
G
D
Current Sampling Resistors
Fig 18. Gate Charge Waveform
Fig 17. Gate Charge Test Circuit
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7
IRFH7923PbF
PQFN Package Details
PQFN Part Marking
INTERNATIONAL
RECTIFIER LOGO
6
DATE CODE
PART NUMBER
XXXX
XYWWX
XXXXX
ASSEMBLY SITE CODE
(Per SCOP 200-002)
MARKING CODE
(Per Marking Spec.)
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode - Min. last 4 digits of EATI #)
(Prod Mode - 4 digits SPN code)
TOP MARKING (LASER)
8
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IRFH7923PbF
PQFN Tape and Reel
NOTES:
(I) Measured from the centerline of the sprocket hole
to the centerline of the pocket
(II) Cumulative tolerance of 10 sprocket holes
is +/- 0.20
(III) Measured from the centerline of the sprocket hole
to the centerline of the pocket
(IV) Other material available
(V) Forming format: Flatbed
(VI) Estimated maximum length = 93 meters / 22B3 reel
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.37mH, RG = 25Ω, IAS = 12A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Rthjc is guaranteed by design
ꢀ When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.03/2008
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9
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