IRFH7921TRPBF [INFINEON]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,;
| 型号： | IRFH7921TRPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
| 文件： | 总10页 (文件大小：302K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-96209
Preliminary
IRFH7928PbF
Applications
HEXFET® Power MOSFET
l
Synchronous MOSFET for Notebook
Processor Power
VDSS
30V
RDS(on) max
Qg
l
Synchronous Rectifer MOSFET for Isolated
DC-DC Converters in Networking Systems
2.9m @VGS = 10V
40nC
Benefits
S
S
l
l
l
Very low RDS(ON) at 4.5V VGS
Low Gate Charge
Fully Characterized Avalanche Voltage and
Current
D
D
D
D
S
G
l
l
l
l
l
100% Tested for RG
Lead-Free (Qualified up to 260°C Reflow)
RoHS compliant (Halogen Free)
Low Thermal Resistance
PQFN
Large Source Lead for more reliable Soldering
Absolute Maximum Ratings
Parameter
Max.
30
Units
VDS
Drain-to-Source Voltage
V
V
Gate-to-Source Voltage
± 20
26
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
I
@ TA = 25°C
D
D
D
@ TA = 70°C
@ TC = 25°C
21
A
124
208
3.1
DM
Power Dissipation
P
P
@TA = 25°C
@TA = 70°C
D
D
W
Power Dissipation
2.0
Linear Derating Factor
Operating Junction and
0.025
-55 to + 150
W/°C
°C
T
J
T
Storage Temperature Range
STG
Thermal Resistance
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
–––
Max.
1.8
Units
RθJC
RθJA
°C/W
–––
40
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes through ꢀ are on page 10
www.irf.com
1
12/19/08
IRFH7928PbF
PRELIMINARY
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
BVDSS
∆Β
RDS(on)
30
–––
0.02
2.4
–––
V
∆
VDSS/ TJ
Breakdown Voltage Temp. Coefficient –––
––– V/°C Reference to 25°C, ID = 1mA
Static Drain-to-Source On-Resistance
–––
–––
1.35
–––
–––
–––
–––
–––
110
–––
–––
–––
–––
–––
–––
–––
2.9
3.8
VGS = 10V, ID = 26A
Ω
m
3.0
VGS = 4.5V, ID = 21A
VDS = VGS, ID = 100µA
VDS = 24V, VGS = 0V
VGS(th)
Gate Threshold Voltage
1.8
2.35
V
∆
VGS(th)
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
-6.4
–––
–––
–––
–––
–––
40
––– mV/°C
IDSS
1.0
µA
150
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
nA
VGS = 20V
VGS = -20V
-100
gfs
Qg
–––
60
S
VDS = 15V, ID = 21A
Qgs1
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
10.2
4.7
–––
–––
–––
–––
–––
–––
VDS = 15V
Qgs2
Qgd
VGS = 4.5V
ID = 21A
nC
13.5
11.8
18.2
22.5
Qgodr
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
See Fig.17 & 18
Qsw
Qoss
Output Charge
nC VDS = 16V, VGS = 0V
RG
td(on)
tr
Gate Resistance
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
0.57
22.2
31.5
22.3
14.2
Ω
0.7
–––
V
DD = 15V, VGS = 4.5V
–––
–––
–––
ID = 21A
ns
td(off)
tf
Ω
Turn-Off Delay Time
Fall Time
RG=1.8
See Fig.15
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 5657 –––
––– 1005 –––
V
GS = 0V
VDS = 15V
pF
–––
520
–––
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
168
21
Units
mJ
Single Pulse Avalanche Energy
EAS
IAR
Avalanche Current
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
S
IS
Continuous Source Current
MOSFET symbol
–––
–––
3.9
(Body Diode)
Pulsed Source Current
showing the
integral reverse
A
G
ISM
–––
–––
208
(Body Diode)
p-n junction diode.
VSD
trr
Diode Forward Voltage
–––
–––
–––
–––
26
1.0
40
47
V
T = 25°C, I = 21A, V = 0V
J S GS
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T = 25°C, I = 21A, VDD = 15V
J F
Qrr
ton
di/dt = 200A/µs
31
nC
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
www.irf.com
IRFH7928PbF
PRELIMINARY
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
BOTTOM
BOTTOM
2.7V
2.7V
60µs PULSE WIDTH
Tj = 25°C
60µs PULSE WIDTH
≤
≤
Tj = 150°C
10
, Drain-to-Source Voltage (V)
1
1
0.1
1
100
0.1
1
10
100
V
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1.8
1.6
1.4
1.2
1.0
0.8
0.6
1000
I
= 26A
D
V
= 10V
GS
100
10
1
T
= 150°C
J
T
= 25°C
J
V
= 15V
DS
≤
60µs PULSE WIDTH
0.1
-60 -40 -20
0
20 40 60 80 100 120140 160
1
2
3
4
5
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
www.irf.com
3
IRFH7928PbF
PRELIMINARY
100000
14.0
12.0
10.0
8.0
V
= 0V,
= C
f = 1 MHZ
GS
I = 21A
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
= C
V
V
= 24V
= 15V
rss
oss
gd
DS
DS
= C + C
ds
gd
10000
1000
100
C
iss
6.0
C
C
oss
4.0
rss
2.0
0.0
0
20
40
60
80
100
120
1
10
, Drain-to-Source Voltage (V)
100
Q , Total Gate Charge (nC)
V
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100µsec
1msec
T
= 150°C
J
T
= 25°C
J
1
1
10msec
T
= 25°C
A
Tj = 150°C
Single Pulse
V
= 0V
1.0
GS
0.1
0.1
0
1
10
100
0.2
0.4
0.6
0.8
1.2
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
www.irf.com
IRFH7928PbF
PRELIMINARY
2.5
2.0
1.5
1.0
0.5
30
25
20
15
10
5
I
= 100µA
D
0
-75 -50 -25
0
25 50 75 100 125 150
25
50
75
100
125
150
T , Temperature ( °C )
T
, Ambient Temperature (°C)
J
A
Fig 9. Maximum Drain Current Vs.
Fig 10. Threshold Voltage Vs. Temperature
Ambient Temperature
100
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
Ri (°C/W) τi (sec)
R1
R1
R2
R2
R3
R3
R4
R4
2.05103
0.002878
8.128574
0.103812
1.180148
τ
τa
J τJ
τ 14.6835
0.1
τ
τ
1τ1
Ci= τi/Ri
τ
τ
2 τ2
3τ3
4τ4
7.02126
16.1531
0.01
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T
SINGLE PULSE
( THERMAL RESPONSE )
A
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
IRFH7928PbF
PRELIMINARY
10
700
600
500
400
300
200
100
0
I
= 26A
I
D
D
TOP
2.1A
3.2A
8
6
BOTTOM 21A
T
= 125°C
= 25°C
4
2
0
J
T
J
2
4
6
8
10 12 14 16 18 20
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
V
Gate -to -Source Voltage (V)
GS,
Fig 12. On-Resistance vs. Gate Voltage
Fig 13. Maximum Avalanche Energy
vs. Drain Current
RD
VDS
15V
VGS
D.U.T.
RG
DRIVER
+
L
+VDD
V
DS
-
VGS
PulseWidth ≤ 1 µs
DutyFactor≤ 0.1
D.U.T
AS
R
G
V
DD
-
I
A
20V
Ω
0.01
t
p
Fig 15a. Switching Time Test Circuit
Fig 14a. Unclamped Inductive Test Circuit
V
(BR)DSS
VDS
t
p
90%
10%
VGS
td(on)
td(off)
tr
tf
I
AS
Fig 15b. Switching Time Waveforms
Fig 14b. Unclamped Inductive Waveforms
6
www.irf.com
IRFH7928PbF
PRELIMINARY
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
CircuitLayoutConsiderations
• LowStrayInductance
• Ground Plane
• LowLeakageInductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dtcontrolledbyRG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Current Regulator
Id
Vds
Same Type as D.U.T.
Vgs
50KΩ
.2µF
.3µF
12V
+
V
DS
D.U.T.
-
Vgs(th)
Qgs1
V
GS
3mA
I
I
Qgs2
Qgd
Qgodr
G
D
Current Sampling Resistors
Fig 18. Gate Charge Waveform
Fig 17. Gate Charge Test Circuit
www.irf.com
7
IRFH7928PbF
PQFN Package Details
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
www.irf.com
IRFH7928PbF
PQFN Part Marking
PQFN Tape and Reel
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
www.irf.com
9
IRFH7928PbF
Orderable part number
Package Type
PQFN 5mm x 6mm
Standard Pack
Note
Form
Tape and Reel
Quantity
IRFH7928TRPBF
4000
Qualification information†
Cons umer††
(per JEDEC JES D47F ††† guidelines )
MS L 2††††
Qualification level
Moisture Sensitivity Level
RoHS compliant
PQFN 5mm x 6mm
(per JEDEC J-ST D-020D†††
)
Yes
†
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
††
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
††† Applicable version of JEDEC standard at the time of product release.
†††† Higher MSL ratings may be available for the specific package types listed here.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.089mH, RG = 25Ω, IAS = 21A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Rthjc is guaranteed by design
ꢀ When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/2008
10
www.irf.com
相关型号：
IRFH7932TR2PBF
Power Field-Effect Transistor, 25A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
INFINEON
IRFH8201
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
INFINEON
©2020 ICPDF网 联系我们和版权申明