IRFH8318TRPBF [INFINEON]
Synchronous MOSFET for high frequency buck converters; 同步MOSFET高频降压转换器
| 型号： | IRFH8318TRPBF |
| 厂家： | 
Infineon |
| 描述： | Synchronous MOSFET for high frequency buck converters |
| 文件： | 总9页 (文件大小：256K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97649C
IRFH8318PbF
HEXFET® Power MOSFET
VDS
Vgs max
30
V
V
± 20
RDS(on) max
(@VGS = 10V)
(@VGS = 4.5V)
3.1
m
Ω
4.6
19
Qg typ
nC
A
PQFN 5X6 mm
ID
50
(@Tc(Bottom) = 25°C)
Applications
• Synchronous MOSFET for high frequency buck converters
FeaturesandBenefits
Features
Benefits
Low Thermal Resistance to PCB (< 1.7°C/W)
Low Profile (<1.2mm)
Enable better thermal dissipation
results in Increased Power Density
⇒
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
Multi-Vendor Compatibility
Easier Manufacturing
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
Environmentally Friendlier
Increased Reliability
Orderable part number
Package Type
Standard Pack
Form
Tape and Reel
Tape and Reel
Note
Quantity
4000
IRFH8318TRPBF
IRFH8318TR2PBF
PQFN 5mm x 6mm
PQFN 5mm x 6mm
400
Absolute Maximum Ratings
Max.
Parameter
Units
VDS
Drain-to-Source Voltage
Gate-to-Source Voltage
30
± 20
27
V
V
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
I
I
I
I
I
I
@ TA = 25°C
D
D
D
D
D
@ TA = 70°C
21
120
76
50
@ TC(Bottom) = 25°C
@ TC(Bottom) = 100°C
@ TC = 25°C
A
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
400
3.6
59
DM
Power Dissipation
P
P
@TA = 25°C
D
D
W
Power Dissipation
@TC(Bottom) = 25°C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
0.029
-55 to + 150
W/°C
°C
T
T
J
STG
Notes through are on page 9
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1
03/30/12
IRFH8318PbF
Static @ TJ = 25°C (unless otherwise specified)
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1.0mA
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
30
–––
–––
–––
3.1
V
ΔΒVDSS/ΔTJ
RDS(on)
––– 0.019
V/°C
V
GS = 10V, ID = 20A
GS = 4.5V, ID = 16A
–––
–––
1.35
–––
–––
–––
–––
–––
81
2.5
3.6
1.8
-6.0
–––
–––
–––
–––
–––
41
Ω
m
V
4.6
VGS(th)
ΔVGS(th)
IDSS
Gate Threshold Voltage
2.35
V
VDS = VGS, ID = 50μA
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– mV/°C
VDS = 24V, VGS = 0V
1
μA
150
V
V
V
V
DS = 24V, VGS = 0V, TJ = 125°C
GS = 20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
nA
GS = -20V
-100
DS = 10V, ID = 20A
gfs
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
VGS = 10V, VDS = 15V, ID = 20A
Qg
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
Qg
Total Gate Charge
19
VDS = 15V
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
5.8
2.3
4.4
6.5
6.7
18
VGS = 4.5V
ID = 20A
nC
VDS = 16V, VGS = 0V
nC
Gate Resistance
1.7
15
Ω
–––
–––
–––
–––
–––
–––
–––
–––
VDD = 15V, VGS = 4.5V
td(on)
tr
td(off)
tf
Turn-On Delay Time
ID = 20A
Rise Time
33
ns
Ω
RG=1.8
Turn-Off Delay Time
18
Fall Time
12
3180
700
270
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
pF
VDS = 10V
Output Capacitance
Reverse Transfer Capacitance
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
160
20
Units
mJ
Single Pulse Avalanche Energy
Avalanche Current
EAS
IAR
A
Diode Characteristics
Conditions
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
MOSFET symbol
D
–––
–––
50
(Body Diode)
Pulsed Source Current
showing the
integral reverse
p-n junction diode.
A
G
ISM
–––
–––
400
S
(Body Diode)
VSD
trr
T = 25°C, I = 20A, V = 0V
J S GS
Diode Forward Voltage
Reverse Recovery Time
–––
–––
–––
–––
16
1.0
24
53
V
T = 25°C, I = 20A, VDD = 15V
ns
J
F
Qrr
ton
Reverse Recovery Charge
Forward Turn-On Time
35
nC di/dt = 380A/μs
Time is dominated by parasitic Inductance
Thermal Resistance
Parameter
Typ.
–––
–––
–––
–––
Max.
1.7
32
Units
Junction-to-Case
RθJC (Bottom)
RθJC (Top)
RθJA
Junction-to-Case
°C/W
Junction-to-Ambient
Junction-to-Ambient
35
RθJA (<10s)
22
2
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IRFH8318PbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
7.00V
5.00V
4.50V
3.50V
3.00V
2.75V
2.50V
7.00V
5.00V
4.50V
3.50V
3.00V
2.75V
2.50V
BOTTOM
BOTTOM
2.5V
2.5V
1
60μs
Tj = 25°C
PULSE WIDTH
≤
60μs
Tj = 150°C
PULSE WIDTH
≤
0.1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
1.6
1.4
1.2
1.0
0.8
0.6
1000
I
= 20A
D
V
= 10V
GS
100
10
1
T
= 150°C
J
T
= 25°C
V
J
= 15V
DS
≤60μs PULSE WIDTH
0.1
1
2
3
4
5
6
-60 -40 -20
0
20 40 60 80 100 120 140160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
100000
10000
1000
100
14
V
= 0V,
= C
f = 1 MHZ
GS
I = 20A
D
V
V
V
= 24V
= 15V
= 6.0V
C
C
C
+ C , C
SHORTED
ds
DS
DS
DS
iss
gs
gd
12
10
8
= C
rss
oss
gd
= C + C
ds
gd
C
iss
C
oss
6
C
rss
4
2
0
10
0
10
20
30
40
50
60
1
10
100
Q
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
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3
IRFH8318PbF
10000
1000
100
10
1000
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
T
= 150°C
J
100
10
1msec
100μsec
Limited By Source
T
= 25°C
J
10msec
DC
Bonding Technology
1
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
1.2
GS
0.1
1.0
0.1
1
10
100
0.2
0.4
V
0.6
0.8
1.0
1.4
V
, Drain-to-Source Voltage (V)
DS
, Source-to-Drain Voltage (V)
SD
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
2.6
2.4
2.2
2.0
1.8
1.6
120
Limited By Source
Bonding Technology
100
80
60
40
20
0
I
I
I
I
= 50μA
= 250μA
= 1.0mA
= 1.0A
D
D
D
D
1.4
1.2
1.0
0.8
0.6
25
50
75
100
125
150
-75 -50 -25
0
25 50 75 100 125 150
T , Case Temperature (°C)
C
T , Temperature ( °C )
J
Fig 9. Maximum Drain Current vs.
Fig 10. Threshold Voltage vs. Temperature
Case(Bottom)Temperature
10
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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IRFH8318PbF
10
8
700
600
500
400
300
200
100
0
I
= 20A
I
D
D
TOP
5.6A
8.6A
BOTTOM 20A
6
T
= 125°C
J
4
T
= 25°C
5
J
2
0
10
15
20
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
V
Gate -to -Source Voltage (V)
GS,
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
I
AS
20V
Ω
0.01
t
p
Fig 14b. Unclamped Inductive Waveforms
Fig 14a. Unclamped Inductive Test Circuit
RD
VDS
VDS
90%
VGS
D.U.T.
RG
+VDD
-
10%
VGS
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
td(on)
td(off)
tr
tf
Fig 15a. Switching Time Test Circuit
Fig 15b. Switching Time Waveforms
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5
IRFH8318PbF
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 18. Gate Charge Waveform
Fig 17. Gate Charge Test Circuit
6
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IRFH8318PbF
PQFN 5x6 Outline "E" Package Details
For footprint and stencil design recommendations, please refer to application note AN-1154 at
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 5x6 Outline "E" Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
PART NUMBER
XXXX
XYWWX
XXXXX
(“4 or 5 digits”)
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
MARKING CODE
(Per Marking Spec)
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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7
IRFH8318PbF
PQFN 5x6 Outline "E" Tape and Reel
NOTE: Controlling dimensions in mm Std reel quantity is 4000 parts.
REEL DIMENSIONS
STANDARD OPTION (QTY 4000)
TR1 OPTION (QTY 400)
TR2
METRIC
MAX
IMPERIAL
METRIC
MAX
178.5
21.5
13.8
2.3
IMPERIAL
MIN
MIN
MAX
7.028
0.846
0.543
0.091
2.598
CODE
MIN
MAX
13.011 177.5
MIN
A
B
C
D
E
F
12.972
0.823
0.504
0.067
3.819
6.988
0.823
0.520
0.075
2.350
329.5 330.5
20.9
12.8
1.7
0.846
0.532
0.091
3.898
20.9
13.2
1.9
21.5
13.5
2.3
97
99
65
66
Ref
13
17.4
14.5
Ref
13
12
G
0.512
0.512
0.571
0.571
14.5
8
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IRFH8318PbF
Qualification information†
Cons umer††
(per JEDEC JES D47F ††† guidelines )
Qualification level
MS L 1
Moisture Sensitivity Level
RoHS compliant
PQFN 5mm x 6mm
(per JEDEC J-ST D-020D†††
Yes
)
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.78mH, RG = 50Ω, IAS = 20A.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
R is measured at TJ of approximately 90°C.
θ
ꢀ When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Calculated continuous current based on maximum allowable junction temperature.
Current is limited to 50A by source bonding technology.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 101N. Sepulveda Blvd, El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 03/2012
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9
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