IRFI1010N-104PBF [INFINEON]

Power Field-Effect Transistor, 49A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET;
IRFI1010N-104PBF
型号: IRFI1010N-104PBF
厂家: Infineon    Infineon
描述:

Power Field-Effect Transistor, 49A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

局域网 开关 脉冲 晶体管
文件: 总5页 (文件大小:271K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

IRFI1010N-105PBF

49A, 55V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET
INFINEON

IRFI1010N-107

Power Field-Effect Transistor, 49A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
INFINEON

IRFI1010N-107PBF

Power Field-Effect Transistor, 49A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON

IRFI1010N-108

Power Field-Effect Transistor, 49A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
INFINEON

IRFI1010N-109

Power Field-Effect Transistor, 49A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON

IRFI1010N-109PBF

49A, 55V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET
INFINEON

IRFI1010N-110PBF

Power Field-Effect Transistor, 49A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON

IRFI1010N-112

Power Field-Effect Transistor, 49A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
INFINEON

IRFI1010N-112PBF

Power Field-Effect Transistor, 49A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON

IRFI1010NPBF

HEXFET㈢ Power MOSFET
INFINEON

IRFI1310G

Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=22A)
INFINEON

IRFI1310G-002

Power Field-Effect Transistor, 21A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
INFINEON