IRFI4228PBF [INFINEON]
Advanced Process Technology; 先进的工艺技术
| 型号： | IRFI4228PBF |
| 厂家： | 
Infineon |
| 描述： | Advanced Process Technology |
| 文件： | 总9页 (文件大小：308K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97228
IRFI4228PbF
PDP SWITCH
Features
Key Parameters
l
Advanced Process Technology
VDS max
150
180
12.2
61
V
V
m:
A
°C
l
Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
Low EPULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
VDS (Avalanche) typ.
RDS(ON) typ. @ 10V
RP max @ TC= 100°C
l
I
TJ max
150
l
l
Low QG for Fast Response
High Repetitive Peak Current Capability for
Reliable Operation
D
D
S
l
Short Fall & Rise Times for Fast Switching
150°C Operating Junction Temperature for
Improved Ruggedness
l
S
D
G
l
Repetitive Avalanche Capability for Robustness
G
and Reliability
TO-220AB Full-Pak
G
D
S
Gate
Drain
Source
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applicationsinPlasmaDisplayPanels. ThisMOSFETutilizesthelatestprocessingtechniquestoachieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 150°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Max.
Parameter
Units
VGS
±30
Gate-to-Source Voltage
V
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current c
34
A
21
130
I
RP @ TC = 100°C
61
Repetitive Peak Current g
Power Dissipation
PD @TC = 25°C
PD @TC = 100°C
46
18
W
Power Dissipation
0.37
Linear Derating Factor
W/°C
°C
TJ
-40 to + 150
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
300
10lbxin (1.1Nxm)
N
Thermal Resistance
Parameter
Junction-to-Case f
Junction-to-Ambient f
Typ.
Max.
2.73
65
Units
RθJC
RθJA
–––
–––
°C/W
Notes through ꢀare on page 8
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1
06/26/06
IRFI4228PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Conditions
VGS = 0V, ID = 250µA
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
150
–––
–––
3.0
–––
190
12.2
–––
-12
–––
V
Reference to 25°C, I = 1mA
∆ΒVDSS/∆TJ
RDS(on)
––– mV/°C
D
VGS = 10V, ID = 20A e
16
mΩ
V
VDS = VGS, ID = 250µA
VGS(th)
5.0
∆VGS(th)/∆TJ
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
64
––– mV/°C
VDS = 150V, VGS = 0V
–––
–––
–––
–––
–––
73
20
1.0
µA
mA
nA
VDS = 150V, VGS = 0V, TJ = 125°C
VGS = 20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
-100
–––
110
–––
–––
VGS = -20V
VDS = 25V, ID = 20A
VDD = 75V, ID = 20A, VGS = 10Ve
gfs
Qg
Qgd
tst
S
–––
–––
100
nC
Gate-to-Drain Charge
20
V
DD = 120V, VGS = 15V, RG= 5.1Ω
L = 220nH, C= 0.3µF, VGS = 15V
DS = 120V, RG= 5.1Ω, TJ = 25°C
Shoot Through Blocking Time
–––
ns
µJ
–––
–––
62
–––
–––
EPULSE
V
Energy per Pulse
L = 220nH, C= 0.3µF, VGS = 15V
110
VDS = 120V, RG= 5.1Ω, TJ = 100°C
VGS = 0V
Ciss
Input Capacitance
––– 4560 –––
V
DS = 25V
Coss
Crss
Output Capacitance
–––
–––
–––
–––
560
110
460
4.5
–––
–––
–––
–––
pF
ƒ = 1.0MHz
Reverse Transfer Capacitance
Effective Output Capacitance
Internal Drain Inductance
VGS = 0V, VDS = 0V to 120V
Coss eff.
LD
D
S
Between lead,
nH 6mm (0.25in.)
from package
G
LS
Internal Source Inductance
–––
7.5
–––
and center of die contact
Avalanche Characteristics
Typ.
–––
–––
180
–––
Max.
170
4.6
Parameter
Units
mJ
mJ
V
EAS
Single Pulse Avalanche Energyd
Repetitive Avalanche Energy c
Repetitive Avalanche Voltageꢀc
Avalanche Currentꢀd
EAR
VDS(Avalanche)
IAS
–––
20
A
Diode Characteristics
Conditions
Parameter
Min. Typ. Max. Units
IS @ TC = 25°C
ISM
MOSFET symbol
Continuous Source Current
–––
–––
34
showing the
(Body Diode)
A
integral reverse
p-n junction diode.
Pulsed Source Current
(Body Diode)ꢀc
–––
–––
130
TJ = 25°C, IS = 20A, VGS = 0V e
TJ = 25°C, IF = 20A, VDD = 50V
di/dt = 100A/µs e
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
74
1.3
110
350
V
ns
nC
Qrr
230
2
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IRFI4228PbF
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
VGS
15V
60µs PULSE WIDTH
Tj = 25°C
≤
TOP
TOP
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
BOTTOM
BOTTOM
5.0V
1
60µs PULSE WIDTH
Tj = 150°C
≤
5.0V
0.1
1
0.1
1
10
100
1000
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1000
100
10
I
= 20A
V
= 25V
D
DS
V
= 10V
≤
60µs PULSE WIDTH
GS
T
= 150°C
J
T
= 25°C
J
1
0.1
3
4
5
6
7
-60 -40 -20
0
20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
120
120
L = 220nH
C = 0.3µF
100°C
L = 220nH
C = Variable
100°C
25°C
90
110
110
100
90
80
70
60
50
40
30
20
100
25°C
80
70
60
50
40
30
20
10
80
90
100
110
120
130
60 65 70 75 80 85 90 95 100 105
V
Drain-to-Source Voltage (V)
I , Peak Drain Current (A)
D
DS,
Fig 6. Typical EPULSE vs. Drain Current
Fig 5. Typical EPULSE vs. Drain-to-Source Voltage
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3
IRFI4228PbF
140
1000
100
10
L = 220nH
120
C = 0.3µF
100
80
60
40
20
0
C = 0.2µF
T
= 150°C
J
T
= 25°C
J
C = 0.1µF
1
V
= 0V
GS
0.1
20
40
60
80
100 120 140 160
0.2
0.4
0.6
0.8
1.0
1.2
V
, Source-to-Drain Voltage (V)
SD
Temperature (°C)
Fig 7. Typical EPULSE vs.Temperature
Fig 8. Typical Source-Drain Diode Forward Voltage
100000
10000
1000
100
12.0
V
= 0V,
= C
f = 1 MHZ
GS
I = 20A
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
V
V
V
= 120V
= 75V
= 30V
= C
DS
DS
DS
10.0
8.0
6.0
4.0
2.0
0.0
rss
oss
gd
= C + C
ds
gd
C
iss
C
oss
C
rss
10
1
10
100
1000
0
10 20 30 40 50 60 70 80
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
G
DS
Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 9. Typical Capacitance vs.Drain-to-Source Voltage
1000
35
30
25
20
15
10
5
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100
100µsec
10msec
10
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0
0
1
10
100
1000
25
50
75
100
125
150
V
, Drain-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
DS
Fig 11. Maximum Drain Current vs. Case Temperature
Fig 12. Maximum Safe Operating Area
4
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IRFI4228PbF
160
140
120
100
80
700
600
500
400
300
200
100
0
I
I
= 20A
D
D
TOP
4.6A
5.4A
BOTTOM 20A
60
40
T
= 125°C
J
20
T
= 25°C
J
0
4
5
6
7
8
9
10
11
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
V
Gate -to -Source Voltage (V)
GS,
Fig 14. Maximum Avalanche Energy vs. Temperature
Fig 13. On-Resistance vs. Gate Voltage
5.0
100
ton= 1µs
Duty cycle = 0.25
4.5
4.0
Half Sine Wave
Square Pulse
80
60
I
= 250µA
D
3.5
3.0
2.5
2.0
40
20
0
25
50
75
100
125
150
-75 -50 -25
0
25 50 75 100 125 150
Case Temperature (°C)
T
, Temperature ( °C )
J
Fig 15. Threshold Voltage vs. Temperature
Fig 16. Typical Repetitive peak Current vs.
Case temperature
10
D = 0.50
1
0.20
0.10
R1
R1
R2
R2
R3
R3
0.05
0.1
Ri (°C/W) τi (sec)
0.3129 0.000381
1.1873 0.219458
1.2311 2.895
τ
JτJ
τ
τ
0.02
0.01
Cτ
τ
1τ1
τ
2 τ2
3τ3
0.01
Ci= τi/Ri
SINGLE PULSE
0.001
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFI4228PbF
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
D.U.T
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• di/dt controlled by RG
RG
+
-
Body Diode
Inductor Current
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for N-Channel HEXFET® Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
GS
0.01Ω
t
p
I
AS
Fig 19b. Unclamped Inductive Waveforms
Fig 19a. Unclamped Inductive Test Circuit
Id
Vds
Vgs
L
VCC
DUT
Vgs(th)
0
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 20a. Gate Charge Test Circuit
Fig 20b. Gate Charge Waveform
6
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IRFI4228PbF
A
RG
C
DRIVER
L
VCC
B
Ipulse
DUT
RG
Fig 21b. tst Test Waveforms
Fig 21a. tst and EPULSE Test Circuit
Fig 21c. EPULSE Test Waveforms
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7
IRFI4228PbF
TO-220AB Full-Pak Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Full-Pak Part Marking Information
TO-220AB Full-Pak packages are not recommended for Surface Mount Application.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.85mH, RG = 25Ω, IAS = 20A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
R is measured at TJ of approximately 90°C.
θ
ꢁ Half sine wave with duty cycle = 0.25, ton=1µsec.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 06/06
8
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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