IRFI744G [INFINEON]
Power MOSFET(Vdss=450V, Rds(on)=0.63ohm, Id=4.9A); 功率MOSFET （ VDSS = 450V ， RDS（ON） = 0.63ohm ，ID = 4.9A ）
| 型号： | IRFI744G |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=450V, Rds(on)=0.63ohm, Id=4.9A) |
| 文件： | 总8页 (文件大小：264K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
相关型号：
IRFI820-002
Power Field-Effect Transistor, 2.1A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRFI820-002PBF
Power Field-Effect Transistor, 2.1A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRFI820-003
Power Field-Effect Transistor, 2.1A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRFI820-004
Power Field-Effect Transistor, 2.1A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
INFINEON
IRFI820-005PBF
Power Field-Effect Transistor, 2.1A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRFI820-006
Power Field-Effect Transistor, 2.1A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
INFINEON
IRFI820-010
Power Field-Effect Transistor, 2.1A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
©2020 ICPDF网 联系我们和版权申明