IRFI9630GPBF [INFINEON]
HEXFET㈢ Power MOSFET; HEXFET㈢功率MOSFET型号: | IRFI9630GPBF |
厂家: | Infineon |
描述: | HEXFET㈢ Power MOSFET |
文件: | 总7页 (文件大小:926K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 94851
IRFI9630GPbF
• Lead-Free
www.irf.com
1
11/07/03
IRFI9630GPbF
2
www.irf.com
IRFI9630GPbF
www.irf.com
3
IRFI9630GPbF
4
www.irf.com
IRFI9630GPbF
www.irf.com
5
IRFI9630GPbF
6
www.irf.com
IRFI9630GPbF
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
TO-220 Full-Pak Part Marking Information
E XAMP L E : T H IS IS AN IR F I840G
W IT H AS S E MB L Y
P AR T N U MB E R
DAT E CODE
L OT CODE 3432
IN T E R N AT IONAL
R E CT IF IE R
L OGO
IR F I8 40G
924 K
AS S E MB L E D ON W W 24 1999
IN T H E AS S E MB L Y L IN E "K "
34
32
Note: "P" in assembly line
position indicates "Lead-Free"
YE AR
WE E K 24
L IN E
9 = 1999
AS S E MB L Y
L OT CODE
K
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/03
www.irf.com
7
相关型号:
IRFI9640G-002PBF
Power Field-Effect Transistor, 6.1A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
INFINEON
IRFI9640G-003
Power Field-Effect Transistor, 6.1A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
INFINEON
IRFI9640G-003PBF
Power Field-Effect Transistor, 6.1A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
INFINEON
IRFI9640G-004
Power Field-Effect Transistor, 6.1A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
INFINEON
IRFI9640G-004PBF
Power Field-Effect Transistor, 6.1A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
VISHAY
©2020 ICPDF网 联系我们和版权申明