IRFI9Z34N [INFINEON]
HEXFET Power MOSFET (-55V, 0.1ohm, -14A); HEXFET功率MOSFET （ -55V ， 0.1ohm ， -14A ）
| 型号： | IRFI9Z34N |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET (-55V, 0.1ohm, -14A) |
| 文件： | 总8页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 9.1530A
IRFI9Z34N
HEXFET® Power MOSFET
l Advanced Process Technology
l Isolated Package
l High Voltage Isolation = 2.5KVRMS ꢀ
l Sink to Lead Creepage Dist. = 4.8mm
l P-Channel
D
VDSS = -55V
RDS(on) = 0.10Ω
G
l Fully Avalanche Rated
Description
ID = -14A
S
FifthGenerationHEXFETsfromInternationalRectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
TheTO-220Fullpakeliminatestheneedforadditional
insulating hardware in commercial-industrial
applications. Themouldingcompoundusedprovides
ahighisolationcapabilityandalowthermalresistance
between the tab and external heatsink. This isolation
is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to
a heatsink using a single clip or by a single screw
fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
Max.
-14
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
-10
A
- 68
PD @TC = 25°C
Power Dissipation
37
W
W/°C
V
Linear Derating Factor
0.24
± 20
180
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
mJ
-10
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
3.7
mJ
-5.0
V/ns
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
–––
Max.
4.1
65
Units
RθJC
RθJA
°C/W
–––
8/25/97
IRFI9Z34N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
-55 ––– –––
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.05 ––– V/°C Reference to 25°C, ID = -1mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance ––– ––– 0.10
Ω
V
S
VGS = -10V, ID = - 7.8A
VDS = VGS, ID = -250µA
VDS = 25V, ID = -10A
VDS = - 55V, VGS = 0V
VDS = - 44V, VGS = 0V, TJ = 150°C
VGS = 20V
Gate Threshold Voltage
-2.0 ––– -4.0
4.2 ––– –––
Forward Transconductance
––– ––– -25
––– ––– -250
––– ––– 100
––– ––– -100
––– ––– 35
––– ––– 7.9
––– ––– 16
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
Qg
ID = -10A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = - 44V
VGS = -10V, See Fig. 6 and 13
–––
–––
–––
–––
13 –––
55 –––
30 –––
41 –––
VDD = -28V
ID = -10A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 13Ω
RD = 2.6Ω, See Fig. 10
Between lead,
6mm (0.25in.)
D
4.5
7.5
LD
LS
Internal Drain Inductance
Internal Source Inductance
–––
–––
–––
–––
nH
pF
G
from package
and center of die contact
VGS = 0V
S
Ciss
Coss
Crss
Input Capacitance
––– 620 –––
––– 280 –––
––– 140 –––
Output Capacitance
VDS = -25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
-14
––– –––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
––– ––– -68
––– ––– -1.3
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
V
TJ = 25°C, IS = - 7.8A, VGS = 0V
––– 54
82
ns
TJ = 25°C, IF = -10A
Qrr
ton
––– 110 160
nC di/dt = -100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ꢀ t=60s, ƒ=60Hz
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 3.6mH
RG = 25Ω, IAS = -10A. (See Figure 12)
Uses IRF9Z34N data and test conditions
ISD ≤ -10A, di/dt ≤ -290A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
IRFI9Z34N
100
10
1
1 0 0
1 0
1
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
TOP
TOP
BOTT OM - 4. 5V
BOTT OM - 4. 5V
-4.5V
-4.5V
20µs PULSE W IDTH
T=175°C
CJ
20µs PULS E W IDTH
T = 25°C
= C
cJ
A
A
0. 1
1
1 0
1 0 0
0.1
1
10
100
-V
, Drain-to-Source Voltage (V)
-V
, Drain-to-Source Voltage (V)
D S
D S
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1 0 0
1 0
1
2. 0
1. 5
1. 0
0. 5
0. 0
I
= -17A
D
T
= 2 5°C
J
T
= 175°C
J
V
= -2 5V
DS
20µs P ULS E W IDTH
V
= -10V
GS
A
1 0 A
4
5
6
7
8
9
- 6 0 - 4 0 - 2 0
0
2 0
4 0
6 0
8 0 1 0 0 1 2 0 1 4 0 1 6 0 1 8 0
TJ , Junction Tem perature (°C)
-VG S , Ga te-to-So urce Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
IRFI9Z34N
1200
20
16
12
8
V
C
C
C
= 0V,
f = 1M Hz
I
= -10A
D
GS
iss
= C
= C
= C
+ C
+ C
,
C
ds
SHORTE D
gs
gd
d s
gd
rss
oss
V
V
= -44V
= -28V
1000
800
600
400
200
DS
DS
gd
C
C
is s
o ss
rs s
C
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
A
A
1
10
100
0
10
20
30
40
-VD S , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1 0 0
1 0
1
1000
100
10
OPE RATION IN THIS A RE A LIMITE D
BY R
D S(o n)
T
= 175°C
J
1 0µs
T
= 25°C
J
100µs
1m s
TJ = 25°C
T
= 175°C
J
10m s
V
= 0V
G S
Single Pulse
0. 1
A
1
A
0. 2
0. 4
0. 6
0. 8
1. 0
1. 2
1. 4
1. 6
1
10
100
-V
, Drain-to-Source Voltage (V)
-VSD , Source-to-Drain Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
IRFI9Z34N
RD
16
12
8
VDS
VGS
D.U.T.
RG
-
+
VDD
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
4
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
0
25
50
75
100
125
150
175
°
T , Case Temperature ( C)
C
90%
V
DS
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
10
D = 0.50
0.20
1
0.10
0.05
0.02
0.01
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
0.1
t
1
t
2
Notes:
1. Duty factor D =
t / t
1
2
2. Peak T = P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRFI9Z34N
500
400
300
200
100
0
L
I
V
D
D S
TOP
-4.2A
-7.2A
BOTTOM -10A
R
D .U .T
AS
G
V
D D
A
I
D R IVER
-20V
0 .0 1
Ω
t
p
15V
Fig 12a. Unclamped Inductive Test Circuit
A
175
25
50
75
100
125
150
I
AS
Starting TJ , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
t
p
V
(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
.2µF
12V
.3µF
-10V
-
V
+
DS
Q
Q
GD
D.U.T.
GS
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
IRFI9Z34N
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T*
-
+
-
-
+
RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
VDD
VGS
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
[
V
=10V ] ***
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
[
[
]
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
]
I
SD
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For P-Channel HEXFETS
IRFI9Z34N
Package Outline
TO-220 Fullpak Outline
Dimensions are shown in millimeters (inches)
10.60 (.41 7)
10.40 (.40 9)
3.40 (.133 )
3.10 (.123 )
4.8 0 (.189)
4.6 0 (.181)
ø
2 .80 (.110)
2 .60 (.102)
- A
-
3.70 (.145)
3.20 (.126)
LE AD A S SIGN M E N T S
1
2
3
-
-
-
GA TE
7 .10 (.280)
6 .70 (.263)
D R AIN
SO U R C E
16 .0 0 (.630)
15 .8 0 (.622)
1.15 (.04 5)
M IN .
N O T ES :
1
D IM EN SION IN G & T O LER A N C IN G
PE R AN S I Y14.5 M , 1982
1
2
3
2
C O N TR OLLIN G D IM EN S ION : IN C H .
3.30 (.130 )
3.10 (.122 )
-
B
-
13 .7 0 (.540)
13 .5 0 (.530)
C
D
A
B
0.48 (.019)
3X
0.44 (.017)
0.9 0 (.035)
3X
0.7 0 (.028)
1.40 (.05 5)
3X
1.05 (.04 2)
2.85 (.112 )
2.65 (.104 )
0.25 (.010 )
A
M
B
M
M IN IM U M C R E EP AG E
D IST A NC E B ET W E EN
2 .54 (.100)
2X
A-B -C -D
= 4.80 (.189 )
Part Marking Information
TO-220 Fullpak
E
X
A
M
P
LE
LOT CODE E401
:
TH
IT
I
H
S
IS
A
S
A
S
E
N
M
I
R
F
I
840G
W
A
PART NUMBER
INTERNATIONAL
RECTIFIER
IRFI840G
LOGO
E401
9 24 5
ASSEMBLY
DATECODE
OT CODE
L
(YYW W )
YY
= YEAR
W W W EEK
=
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
8/97
相关型号：
IRFIB41N15DTRL
Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, FULL PACK-3
INFINEON
IRFIB41N15DTRLPBF
Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, FULL PACK-3
INFINEON
IRFIB41N15DTRR
Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, FULL PACK-3
INFINEON
IRFIB41N15DTRRPBF
Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, FULL PACK-3
INFINEON
©2020 ICPDF网 联系我们和版权申明