IRFIB41N15DPBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRFIB41N15DPBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总13页 (文件大小：338K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94927A
IRFB41N15DPbF
IRFIB41N15DPbF
IRFS41N15DPbF
IRFSL41N15DPbF
Applications
l HighfrequencyDC-DCconverters
l Lead-Free
HEXFET® Power MOSFET
VDSS RDS(on) max
ID
Benefits
0.045
150V
41A
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRFB41N15D
D2Pak
TO-262
TO-220 FullPak
IRFIB41N15D
IRFS41N15D IRFSL41N15D
Absolute Maximum Ratings
Parameter
Max.
41
Units
A
I
I
I
@ T = 25°C
C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
D
D
@ T = 100°C
C
29
164
3.1
200
48
DM
Power Dissipation, D2Pak
P
P
P
@T = 25°C
A
W
D
D
D
@T = 25°C
C
Power Dissipation, TO-220
Power Dissipation, Fullpak
Linear Derating Factor, TO-220
Linear Derating Factor, Fullpak
Gate-to-Source Voltage
@T = 25°C
C
1.3
W/°C
0.32
± 30
V
V
GS
Peak Diode Recovery dv/dt
Operating Junction and
dv/dt
T
J
2.7
V/ns
-55 to + 175
T
°C
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
STG
300 (1.6mm from case )
1.1(10)
N•m (lbf•in)
Thermal Resistance
Parameter
Typ.
–––
–––
0.50
–––
–––
–––
Max.
0.75
3.14
–––
62
Units
Rθ
°C/W
JC
JC
cs
Junction-to-Case
Junction-to-Case, Fullpak
Rθ
Rθ
Rθ
Rθ
Rθ
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, TO-220
Junction-to-Ambient, D2Pak
JA
JA
JA
40
65
Junction-to-Ambient, Fullpak
Notes through are on page 12
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1
08/10/06
IRFB/IRFIB/IRFS/IRFSL41N15DPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
VGS = 0V, ID = 250µA
Drain-to-Source Breakdown Voltage
150
–––
–––
V
∆
∆
V(BR)DSS/ TJ
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 25A
VDS = VGS, ID = 250µA
VDS = 150V, VGS = 0V
VDS = 120V, VGS = 0V, TJ = 150°C
VGS = 30V
Breakdown Voltage Temp. Coefficient –––
Static Drain-to-Source On-Resistance –––
0.17
––– V/°C
RDS(on)
VGS(th)
IDSS
––– 0.045
Ω
V
Gate Threshold Voltage
3.0
–––
–––
–––
–––
–––
–––
–––
–––
5.5
25
Drain-to-Source Leakage Current
µA
250
100
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
VGS = -30V
––– -100
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 50V, ID = 25A
gfs
18
–––
72
21
35
16
63
25
14
–––
110
31
S
Qg
ID = 25A
–––
–––
–––
–––
–––
–––
–––
Qgs
Qgd
td(on)
tr
VDS = 120V
VGS = 10V
VDD = 75V
ID = 25A
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC
52
–––
–––
–––
–––
td(off)
tf
RG = 2.5Ω
VGS = 10V
VGS = 0V
VDS = 25V
Turn-Off Delay Time
Fall Time
ns
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
––– 2520 –––
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
510
110
–––
–––
pF ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
––– 3090 –––
VGS = 0V, VDS = 120V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 120V
–––
–––
230
250
–––
–––
Avalanche Characteristics
Parameter
Typ.
–––
–––
–––
Max.
470
25
Units
mJ
A
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
EAR
20
mJ
Repetitive Avalanche Energy
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
I
I
Continuous Source Current
–––
–––
41
MOSFET symbol
S
(Body Diode)
A
showing the
G
Pulsed Source Current
–––
–––
164
integral reverse
SM
S
(Body Diode)
p-n junction diode.
V
t
T = 25°C, I = 25A, V = 0V
J S GS
Diode Forward Voltage
–––
–––
–––
–––
170
1.3
1.3
260
1.9
V
SD
T = 25°C, I = 25A
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns
µC
rr
J
F
Q
t
di/dt = 100A/µs
rr
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
2
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IRFB/IRFIB/IRFS/IRFSL41N15DPbF
1000
1000
100
10
VGS
VGS
15V
TOP
15V
TOP
10V
10V
9.0V
8.0V
7.5V
7.0V
6.5V
9.0V
8.0V
7.5V
7.0V
6.5V
BOTTOM6.0V
BOTTOM6.0V
100
10
1
6.0V
20µs PULSE WIDTH
20µs PULSE WIDTH
6.0V
1
°
T = 25 C
J
°
T = 175 C
J
1
0.1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
3.0
41A
=
I
D
2.5
2.0
1.5
1.0
0.5
0.0
100
10
1
°
T = 175 C
J
°
T = 25 C
J
V
= 25V
DS
20µs PULSE WIDTH
V
=10V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
6
7
8
9
10
11
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
vs. Temperature
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3
IRFB/IRFIB/IRFS/IRFSL41N15DPbF
100000
10000
1000
100
20
16
12
8
I
D
= 25A
V
= 0V,
= C
f = 1 MHZ
+ C
GS
C
C
C
,
C
SHORTED
iss
rss
oss
gs
gd
ds
V
V
V
= 120V
= 75V
= 30V
DS
DS
DS
= C
gd
= C + C
ds
gd
Ciss
Coss
Crss
4
FOR TEST CIRCUIT
SEE FIGURE 13
10
0
0
20
40
60
80 100
120
1
10
100
1000
Q , Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
10
1
°
T = 175 C
10us
J
100us
1ms
°
T = 25 C
J
10ms
°
T = 25 C
C
°
T = 175 C
Single Pulse
J
V
= 0 V
GS
0.1
0.2
1
0.6
1.0
1.4
1.8
1
10
100
1000
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRFB/IRFIB/IRFS/IRFSL41N15DPbF
RD
50
40
30
20
10
0
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
P
2
DM
0.1
0.10
0.05
t
1
t
2
0.02
0.01
Notes:
1. Duty factor D = t / t
SINGLE PULSE
(THERMAL RESPONSE)
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFB/IRFIB/IRFS/IRFSL41N15DPbF
1200
15V
I
D
TOP
10A
21A
1000
BOTTOM 25A
DRIVER
+
L
V
DS
800
600
400
200
0
D.U.T
AS
R
G
V
DD
-
I
A
V
GS
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
°
Starting T , Junction Temperature ( C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
+
VGS
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Current Sampling Resistors
Charge
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRFB/IRFIB/IRFS/IRFSL41N15DPbF
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
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7
IRFB/IRFIB/IRFS/IRFSL41N15DPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
3.78 (.149)
- B -
10.29 (.405)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
3.54 (.139)
1.32 (.052)
1.22 (.048)
- A -
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045)
MIN
HEXFET
IGBTs, CoPACK
1
2
3
1- GATE
1- GATE
2- DRAIN
2- COLLECTOR
3- EMITTER
4- COLLECTOR
3- SOURCE
4- DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
4
TO-220AB Part Marking Information
Note: "P" inassemblyline
position indicates "Lead-Free"
8
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IRFB/IRFIB/IRFS/IRFSL41N15DPbF
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
TO-220 Full-Pak Part Marking Information
Note: "P" in assembly line
position indicates "Lead-Free"
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9
IRFB/IRFIB/IRFS/IRFSL41N15DPbF
D2Pak Package Outline
D2Pak Part Marking Information (Lead-Free)
OR
10
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IRFB/IRFIB/IRFS/IRFSL41N15DPbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
OR
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11
IRFB/IRFIB/IRFS/IRFSL41N15DPbF
D2Pak Tape & Reel Information
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
4.10 (.161)
1.50 (.059)
0.368 (.0145)
0.342 (.0135)
3.90 (.153)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 1.5mH, RG = 25Ω,
IAS = 25A.
ISD ≤ 25A, di/dt ≤ 340A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ꢀ Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
This is only applied to TO-220AB package.
This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
,
TO-220AB & TO-220 FullPak packages are not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 08/2006
12
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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