IRFIB5N65A [INFINEON]
Power MOSFET(Vdss=650V, Rds(on)max=0.93ohm, Id=5.1A); 功率MOSFET ( VDSS = 650V , RDS(ON)最大值= 0.93ohm ,ID = 5.1A )型号: | IRFIB5N65A |
厂家: | Infineon |
描述: | Power MOSFET(Vdss=650V, Rds(on)max=0.93ohm, Id=5.1A) |
文件: | 总8页 (文件大小:105K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD-91816B
SMPS MOSFET
IRFIB5N65A
HEXFET® Power MOSFET
Applications
l Switch Mode Power Supply (SMPS)
VDSS
RDS(on) max
ID
650V
0.93Ω
5.1A
l Uninterruptible Power Supply
l High Speed Power Switching
l High Voltage Isolation = 2.5KVRMS
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
G D S
TO-220 Full-Pak
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
D @ TC = 100°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
5.1
I
3.2
21
A
IDM
PD @TC = 25°C
Power Dissipation
60
W
W/°C
V
Linear Derating Factor
0.48
VGS
dv/dt
TJ
Gate-to-Source Voltage
± 30
Peak Diode Recovery dv/dt
Operating Junction and
2.8
V/ns
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typical SMPS Topologies
l Single Transistor Flyback
l Single Transistor Forward
Notes through are on page 8
1
www.irf.com
6/21/00
IRFIB5N65A
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
650 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.67 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 0.93
2.0 ––– 4.0
Ω
VGS = 10V, ID = 3.1.A
VDS = VGS, ID = 250µA
VDS = 650V, VGS = 0V
VDS = 520V, VGS = 0V, TJ = 125°C
VGS = 30V
V
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
µA
nA
IDSS
IGSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
3.9 ––– –––
Conditions
VDS = 50V, ID = 3.1A
ID = 5.2A
gfs
S
Qg
––– ––– 48
––– ––– 12
––– ––– 19
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 400V
VGS = 10V, See Fig. 6 and 13
–––
–––
–––
–––
14 –––
20 –––
34 –––
18 –––
VDD = 325V
ID = 5.2A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 9.1Ω
RD = 62Ω,See Fig. 10
VGS = 0V
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
––– 1417 –––
––– 177 –––
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
VDS = 25V
–––
7.0 –––
pF
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 520V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 520V ꢀ
––– 1912 –––
–––
–––
48 –––
84 –––
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
Max.
325
5.2
6
Units
mJ
EAS
IAR
–––
–––
–––
Avalanche Current
A
EAR
Repetitive Avalanche Energy
mJ
Thermal Resistance
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
–––
Max.
2.1
Units
RθJC
RθJA
–––
65
°C/W
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
IS
Continuous Source Current
MOSFET symbol
5.2
21
––– –––
––– –––
(Body Diode)
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.5
––– 493 739
––– 2.1 3.2
V
TJ = 25°C, IS = 5.2A, VGS = 0V
ns
TJ = 25°C, IF = 5.2A
Qrr
ton
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
www.irf.com
IRFIB5N65A
100
10
1
100
10
1
VGS
15V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
TOP
TOP
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
20µs PULSE WIDTH
T = 150 C
J
20µs PULSE WIDTH
°
4.5V
°
T = 25 C
J
0.1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
10
3.0
5.2A
=
I
D
2.5
2.0
1.5
1.0
0.5
0.0
°
T = 150 C
J
°
T = 25 C
J
1
V
= 100V
DS
20µs PULSE WIDTH
V
= 10V
GS
0.1
4.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
5.0
6.0
7.0 8.0
9.0
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
www.irf.com
3
IRFIB5N65A
20
16
12
8
2000
I = 5.2A
D
V
C
C
C
= 0V,
f = 1M Hz
G S
iss
= C
+ C
+ C
,
C
S HO RTED
400V
gs
gd
ds
V
V
V
=
DS
DS
DS
= C
= C
rss
oss
gd
ds
= 325V
= 130V
gd
1600
1200
800
400
0
C
is s
C
os s
4
C
rs s
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
0
10
20
30
40
50
1
10
100
1000
Q
, Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
10
100us
1ms
°
T = 150 C
J
1
10ms
°
T = 25 C
J
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
1.0
0.1
0.2
0.1
0.4
0.6
0.8
1.2
10
100
1000
10000
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
www.irf.com
IRFIB5N65A
RD
6.0
5.0
4.0
3.0
2.0
1.0
0.0
VDS
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
T
75
100
125
150
°
, Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
D = 0.50
1
0.20
0.10
0.05
P
DM
0.1
t
1
0.02
0.01
t
2
Notes:
SINGLE PULSE
(THERMAL RESPONSE)
1. Duty factor D =
t / t
1 2
2. Peak T = P
J
x Z
+ T
C
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRFIB5N65A
800
600
400
200
0
1 5V
I
D
TOP
2.3A
3.3A
BOTTOM 5.2A
DRIVER
L
V
G
DS
D.U.T
R
+
V
D D
-
I
A
AS
20V
0.01
t
Ω
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
Vs. Drain Current
Q
G
10 V
8 0 0
Q
Q
GD
GS
7 8 0
7 6 0
7 4 0
7 2 0
7 0 0
V
G
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
A
0
1
2
3
4
5
6
V
GS
I
, Avalanche Current (A)
av
3mA
I
I
D
G
Current Sampling Resistors
Fig 12d. Typical Drain-to-Source Voltage
Vs. Avalanche Current
Fig 13b. Gate Charge Test Circuit
6
www.irf.com
IRFIB5N65A
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
www.irf.com
7
IRFIB5N65A
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
1 0.60 (.4 17 )
1 0.40 (.4 09 )
3 .40 (.13 3)
3 .10 (.12 3)
4.8 0 (.189 )
4.6 0 (.181 )
ø
2.8 0 (.11 0)
2.6 0 (.10 2)
-
A
-
3 .70 (.14 5)
3 .20 (.12 6)
LE A D A S S IG N M E N TS
1
2
3
-
-
-
GA T E
7.1 0 (.28 0)
6.7 0 (.26 3)
D RA IN
S OU R CE
1 6.0 0 (.63 0)
1 5.8 0 (.62 2)
1.1 5 (.04 5)
M IN .
NO TE S :
1
D IM E NS IO N ING & TOL E R AN C IN G
PE R A NS I Y 14.5 M , 1 9 82
1
2
3
2
C ON TR O LL IN G D IM E N S IO N: IN CH .
3.30 (.1 30 )
3.10 (.1 22 )
-
B
-
1 3.7 0 (.54 0)
1 3.5 0 (.53 0)
C
D
A
B
0.48 (.01 9)
0.44 (.01 7)
0.9 0 (.0 35)
3X
0.7 0 (.0 28)
3 X
1 .4 0 (.05 5)
3X
1 .0 5 (.04 2)
2 .85 (.11 2)
2 .65 (.10 4)
0.2 5 (.01 0)
A
M
B
M
M IN IM U M C RE E P AG E
D IS T AN C E BE TW EE N
2 .54 (.1 00 )
2X
A -B -C -D
= 4 .80 (.1 89)
TO-220 Full-Pak Part Marking Information
EXAM PLE
:
TH IS IS AN IRFI840G
W ITH ASSEMBLY
LO T CO DE E401
A
PAR T NU MBER
INTERN ATIO NAL
R EC TIF IER
LO G O
IR FI840G
E 401 9245
ASSEM BL Y
DATE CO DE
(YYW W )
LOT
CO DE
YY
=
YEAR
= W EEK
W W
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. (See fig. 11)
ꢀCoss eff. is a fixed capacitance that gives the same charging time
Starting TJ = 25°C, L = 24mH
as Coss while VDS is rising from 0 to 80% VDSS
RG = 25Ω, IAS = 5.2A. (See Figure 12)
t=60s, f=60Hz
ISD ≤ 5.2A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 6/00
8
www.irf.com
相关型号:
IRFIB7N50A
Power Field-Effect Transistor, 6.6A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
VISHAY
IRFIB7N50A-031
Power Field-Effect Transistor, 6.6A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
VISHAY
IRFIB7N50A-107
Power Field-Effect Transistor, 6.6A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
VISHAY
IRFIB7N50APBF
Power Field-Effect Transistor, 6.6A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, FULL PACK-3
VISHAY
©2020 ICPDF网 联系我们和版权申明