IRFIB7N50APBF [INFINEON]
SMPS MOSFET; 开关电源MOSFET
| 型号： | IRFIB7N50APBF |
| 厂家： | 
Infineon |
| 描述： | SMPS MOSFET |
| 文件： | 总8页 (文件大小：194K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94805
SMPS MOSFET
IRFIB7N50APbF
HEXFET® Power MOSFET
Applications
VDSS
500V
Rds(on) max
ID
6.6A
ꢀ Switch Mode Power Supply ( SMPS )
ꢀ Uninterruptable Power Supply
ꢀ High speed power switching
ꢀ High Voltage Isolation = 2.5KVRMSꢀ
ꢀ Lead-Free
0.52Ω
Benefits
ꢀ Low Gate Charge Qg results in Simple
Drive Requirement
ꢀ Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
ꢀ Fully Characterized Capacitance and
Avalanche Voltage and Current
ꢀ Effective Coss specified ( See AN 1001)
G D S
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current ꢁꢃ
6.6
4.2
44
A
PD @TC = 25°C
Power Dissipation
60
W
W/°C
V
Linear Derating Factor
0.48
VGS
dv/dt
TJ
Gate-to-Source Voltage
± 30
Peak Diode Recovery dv/dt ꢄꢃ
Operating Junction and
6.9
V/ns
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Applicable Off Line SMPS Topologies:
ꢀ Two Transistor Forward
ꢀ Half & Full Bridge Convertors
ꢀ Power Factor Correction Boost
Notes ꢁ through ꢂare on page 8
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1
10/31/03
IRFIB7N50APbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
500 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.61 ––– V/°C Reference to 25°C, ID = 1mAꢁ
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 0.52
2.0 ––– 4.0
Ω
V
VGS = 10V, ID = 4.0A ꢂ
VDS = VGS, ID = 250µA
VDS = 500V, VGS = 0V
VDS = 400V, VGS = 0V, TJ = 125°C
VGS = 30V
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
µA
IDSS
IGSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
6.1 ––– –––
Conditions
VDS = 50V, ID = 6.6Aꢃ
ID = 11A
gfs
S
Qg
––– ––– 52
––– ––– 13
––– ––– 18
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 400V
VGS = 10V, See Fig. 6 and 13 ꢅꢃ
–––
–––
–––
–––
14 –––
35 –––
32 –––
28 –––
VDD = 250V
ID = 11A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 9.1Ω
RD = 22Ω,See Fig. 10 ꢅꢃ
VGS = 0V
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
––– 1423 –––
––– 208 –––
Output Capacitance
Reverse Transfer Capacitance
Output Capacitanceꢃ
Output Capacitanceꢃ
Effective Output Capacitance
VDS = 25V
–––
8.1 –––
pF
ƒ = 1.0MHz, See Fig. 5ꢃ
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 400V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 400V ꢆꢃ
––– 2000 –––
–––
–––
55 –––
97 –––
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energyꢇꢃ
Avalanche Currentꢁꢃ
Typ.
Max.
275
11
Units
mJ
A
EAS
IAR
–––
–––
–––
EAR
Repetitive Avalanche Energyꢁ
6.0
mJ
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
2.1
Units
RθJC
RθJA
Junction-to-Ambient
–––
65
°C/W
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
S
IS
Continuous Source Current
MOSFET symbol
6.6
44
––– –––
––– –––
(Body Diode)
showing the
A
G
ISM
Pulsed Source Current
(Body Diode) ꢀꢁ
integral reverse
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.5
––– 510 770
––– 3.4 5.1
V
TJ = 25°C, IS = 11A, VGS = 0V ꢂ
ns
TJ = 25°C, IF = 11A
Qrr
ton
µC di/dt = 100A/µs ꢂꢁ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFIB7N50APbF
100
10
1
100
10
1
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
20µs PULSE WIDTH
J
4.5V
20µs PULSE WIDTH
°
4.5V
°
T = 150 C
T = 25 C
J
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
10
3.0
11A
=
I
D
2.5
2.0
1.5
1.0
0.5
0.0
°
T = 150 C
J
°
T = 25 C
J
1
V
= 100V
DS
20µs PULSE WIDTH
V
=10V
GS
0.1
4.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
5.0
6.0
7.0 8.0
9.0
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRFIB7N50APbF
20
16
12
8
2400
11A
=
I
D
V
C
C
C
= 0V,
f = 1MHz
GS
iss
rss
oss
= C + C
,
C
SHORTED
gs
gd
gd
ds
V
V
V
= 400V
= 250V
= 100V
DS
DS
DS
= C
2000
1600
1200
800
400
0
= C + C
ds
gd
C
C
iss
oss
C
rss
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
0
10
20
30
40
50
1
10
100
1000
Q , Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
10us
°
T = 150 C
J
100us
1ms
1
°
T = 25 C
J
1
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
0.1
0.1
0.0
10
100
1000
10000
0.4
0.8
1.2
1.6
V
, Drain-to-Source Voltage (V)
V
,Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRFIB7N50APbF
RD
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
VDS
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
D = 0.50
1
0.20
0.10
0.05
P
2
DM
0.1
t
1
0.02
0.01
t
2
Notes:
1. Duty factor D =
SINGLE PULSE
(THERMAL RESPONSE)
t / t
1
2. Peak T =P
J
x Z
+ T
C
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFIB7N50APbF
600
500
400
300
200
100
0
15V
I
D
TOP
4.9A
7.0A
BOTTOM 11A
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
Vs. Drain Current
Q
G
10 V
660
Q
Q
GD
GS
V
G
640
620
600
580
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
A
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
V
GS
I
, Avalanche Current (A)
av
3mA
I
I
D
G
Current Sampling Resistors
Fig 12d. Typical Drain-to-Source Voltage
Vs. Avalanche Current
Fig 13b. Gate Charge Test Circuit
6
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IRFIB7N50APbF
Peak Diode Recovery dv/dt Test Circuit
+
ꢀ
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
+
ꢂ
-
ꢁ
-
+
ꢃ
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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7
IRFIB7N50APbF
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
TO-220 Full-Pak Part Marking Information
EXAMPLE: THIS IS AN IRFI840G
WITH ASSEMBLY
LO T CODE 3432
INTERNATIONAL
ASSEMBLED ON WW 24 1999
PART NUMBER
IRFI840G
924K
RECTIFIER
LOGO
IN THE ASSEMBLY LINE "K"
34
32
DATE CODE
YEAR 9 = 1999
WEEK 24
Note: "P" in assembly line
position indicates "Lead-Free"
ASSEMBLY
LOT CODE
LINE K
Notes:
ꢃRepetitive rating; pulse width limited by
ꢁPulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
ꢄCoss eff. is a fixed capacitance that gives the same charging time
ꢂStarting TJ = 25°C, L = 4.5mH
as Coss while VDS is rising from 0 to 80% VDSS
RG = 25Ω, IAS = 11A. (See Figure 12)
ꢅ
Uses IRFB11N50A data and test conditions
ꢀISD ≤ 11A, di/dt ≤140A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
ꢆt=60s,f=60Hz
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/03
8
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