IRFL024ZPBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET型号: | IRFL024ZPBF |
厂家: | Infineon |
描述: | HEXFET Power MOSFET |
文件: | 总10页 (文件大小:192K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 95250
AUTOMOTIVE MOSFET IRFL024ZPbF
HEXFET® Power MOSFET
Features
D
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Advanced Process Technology
VDSS = 55V
UltraLowOn-Resistance
150°COperatingTemperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
RDS(on) = 57.5mΩ
G
ID = 5.1A
S
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a
150°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating . These
features combine to make this design an extremely
efficientandreliabledeviceforuseinAutomotiveapplica-
tions and a wide variety of other applications.
SOT-223
Absolute Maximum Ratings
Parameter
Max.
Units
Continuous Drain Current, VGS @ 10V (Silicon Limited) ꢀ
Continuous Drain Current, VGS @ 10V ꢀ
Pulsed Drain Current ꢁ
5.1
I
I
I
@ TA = 25°C
@ TA = 70°C
D
4.1
41
A
D
DM
2.8
Power Dissipation ꢀ
P
@TA = 25°C
@TA = 25°C
D
D
1.0
Power Dissipation ꢂ
W
W/°C
V
P
0.02
± 20
Linear Derating Factor ꢀ
Gate-to-Source Voltage
V
GS
EAS (Thermally limited)
13
32
Single Pulse Avalanche Energyꢃ
mJ
EAS (Tested )
Single Pulse Avalanche Energy Tested Value ꢄ
IAR
See Fig.12a, 12b, 15, 16
Avalanche Current
ꢁ
A
EAR
Repetitive Avalanche Energy ꢅ
Operating Junction and
mJ
-55 to + 150
T
T
J
Storage Temperature Range
°C
STG
Thermal Resistance
Parameter
Typ.
–––
Max.
45
Units
RθJA
RθJA
Junction-to-Ambient (PCB mount, steady state) ꢀ
Junction-to-Ambient (PCB mount, steady state) ꢂ
°C/W
–––
120
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1
05/25/04
IRFL024ZPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
55
–––
–––
V
VGS = 0V, ID = 250µA
––– 0.053 –––
––– 46.2 57.5
V/°C Reference to 25°C, ID = 1mA
mΩ
VGS = 10V, ID = 3.1A ꢇ
VGS(th)
2.0
6.2
–––
–––
–––
–––
–––
4.0
–––
20
V
S
VDS = VGS, ID = 250µA
VDS = 25V, ID = 3.1A
gfs
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
µA
VDS = 55V, VGS = 0V
250
200
VDS = 55V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
nA VGS = 20V
VGS = -20V
––– -200
Qg
9.1
1.9
3.9
7.8
21
14
ID = 3.1A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC VDS = 44V
VGS = 10V ꢇ
VDD = 28V
Rise Time
ns
ID = 3.1A
td(off)
tf
Turn-Off Delay Time
30
RG = 53 Ω
VGS = 10V ꢇ
VGS = 0V
Fall Time
23
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
340
68
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
Output Capacitance
39
pF ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
210
55
Output Capacitance
VGS = 0V, VDS = 44V, ƒ = 1.0MHz
Effective Output Capacitance
93
VGS = 0V, VDS = 0V to 44V ꢆ
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
I
Continuous Source Current
(Body Diode)
–––
–––
5.1
MOSFET symbol
S
A
showing the
G
I
Pulsed Source Current
–––
–––
41
integral reverse
SM
S
(Body Diode)
ꢁ
p-n junction diode.
V
t
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
–––
–––
15
1.3
23
15
V
T = 25°C, I = 3.1A, V
= 0V ꢇ
GS
SD
J
S
ns
nC
T = 25°C, I = 3.1A, VDD = 28V
J F
rr
di/dt = 100A/µs ꢇ
Q
t
9.8
rr
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
Notes:
ꢄLimited by TJmax , see Fig.12a, 12b, 15, 16 for typical
repetitive avalanche performance.
ꢀ Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
ꢁ Limited by TJmax, starting TJ = 25°C, L = 2.8mH
ꢅThis value determined from sample failure population.
100% tested to this value in production.
RG = 25Ω, IAS = 3.1A, VGS =10V.
Part not recommended for use above this value.
ꢆWhen mounted on 1 inch square copper board.
ꢇWhen mounted on FR-4 board using minimum
recommended footprint.
ꢂ Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
ꢃ Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to 80%
VDSS
.
2
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IRFL024ZPbF
100
10
1
100
10
1
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
BOTTOM
BOTTOM
4.5V
4.5V
30µs PULSE WIDTH
Tj = 150°C
30µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
12
T
T
= 25°C
J
J
10
8
T
= 150°C
J
= 150°C
10
6
4
T = 25°C
J
2
V
= 25V
DS
30µs PULSE WIDTH
V
= 10V
10
DS
1.0
0
4
5
6
7
8
9
10
0
2
4
6
8
12
I ,Drain-to-Source Current (A)
D
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
vs. Drain Current
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3
IRFL024ZPbF
10000
12.0
10.0
8.0
V
= 0V,
= C
f = 1 MHZ
GS
I
= 3.1A
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
= C
V
V
V
= 44V
= 28V
= 11V
DS
DS
DS
rss
oss
gd
= C + C
ds
gd
1000
100
10
C
C
iss
6.0
oss
4.0
C
rss
2.0
0.0
1
10
100
0
2
4
6
8
10
V
, Drain-to-Source Voltage (V)
Q
Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge vs.
Fig 5. Typical Capacitance vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
1000
100
10
100
10
1
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 150°C
J
100µsec
T
= 25°C
J
1
T
= 25°C
A
1msec
Tj = 150°C
10msec
V
= 0V
Single Pulse
GS
0.1
1
10
100
1000
0.2
0.4
V
0.6
0.8
1.0
1.2
1.4
1.6
V
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRFL024ZPbF
2.0
1.5
1.0
0.5
6
5
4
3
2
1
0
I
= 3.1A
D
V
= 10V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160
25
50
T
75
100
125
150
T
J
, Junction Temperature (°C)
,Ambient Temperature (°C)
A
Fig 10. Normalized On-Resistance
Fig 9. Maximum Drain Current vs.
vs.Temperature
AmbientTemperature
100
10
D = 0.50
0.20
0.10
0.05
1
0.02
0.01
R1
R1
R2
R2
R3
R3
Ri (°C/W) τi (sec)
0.1
0.01
τ
J τJ
τ
τ
SINGLE PULSE
( THERMAL RESPONSE )
Cτ
5.0477
0.000463
τ
1τ1
τ
2 τ2
3τ
19.9479 0.636160
3
20.0169 21.10000
Ci= τi/Ri
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRFL024ZPbF
60
50
40
30
20
10
0
15V
I
D
TOP
0.77A
0.89A
BOTTOM 3.1A
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
2
V0GVS
0.01Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
vs. Drain Current
Q
G
10 V
Q
Q
GD
GS
4.0
3.5
3.0
2.5
2.0
V
G
Charge
Fig 13a. Basic Gate Charge Waveform
I
= 250µA
D
L
VCC
DUT
0
-75 -50 -25
0
25
50
75 100 125 150
1K
T , Temperature ( °C )
J
Fig 14. Threshold Voltage vs. Temperature
Fig 13b. Gate Charge Test Circuit
6
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IRFL024ZPbF
10
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche pulsewidth, tav
1
0.01
∆
assuming
Tj = 25°C due to
avalanche losses
0.05
0.10
0.1
0.01
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
14
12
10
8
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
TOP
BOTTOM 1% Duty Cycle
= 3.1A
Single Pulse
I
D
6
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
4
6. Iav = Allowable avalanche current.
2
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
0
D = Duty cycle in avalanche = tav ·f
25
50
75
100
125
150
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = ∆T/ ZthJC
Fig 16. Maximum Avalanche Energy
Iav = 2∆T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
vs.Temperature
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7
IRFL024ZPbF
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
D.U.T
+
*
=10V
V
GS
ꢀ
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
ꢂ
-
Reverse
Recovery
Current
Body Diode Forward
- ꢁ
Current
+
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
ꢃ
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
8
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IRFL024ZPbF
SOT-223 (TO-261AA) Package Outline
Dimensions are shown in milimeters (inches)
SOT-223 (TO-261AA) Part Marking Information
HEXFET PRODUCT MARKING
THIS IS AN IRFL014
LOT CODE
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
FL014
314P
AXXXX
A = ASSEMBLY SITE
CODE
DATE CODE
(YYWW)
YY = YEAR
WW = WEEK
BOTTOM
TOP
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
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9
IRFL024ZPbF
SOT-223 (TO-261AA) Tape & Reel Information
Dimensions are shown in milimeters (inches)
4.10 (.161)
3.90 (.154)
0.35 (.013)
0.25 (.010)
1.85 (.072)
1.65 (.065)
2.05 (.080)
1.95 (.077)
TR
7.55 (.297)
7.45 (.294)
16.30 (.641)
15.70 (.619)
7.60 (.299)
7.40 (.292)
1.60 (.062)
1.50 (.059)
TYP.
FEED DIRECTION
2.30 (.090)
2.10 (.083)
7.10 (.279)
6.90 (.272)
12.10 (.475)
11.90 (.469)
NOTES :
1. CONTROLLING DIMENSION: MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.
13.20 (.519)
12.80 (.504)
15.40 (.607)
11.90 (.469)
4
330.00
(13.000)
MAX.
50.00 (1.969)
MIN.
18.40 (.724)
MAX.
NOTES :
1. OUTLINE COMFORMS TO EIA-418-1.
2. CONTROLLING DIMENSION: MILLIMETER..
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
14.40 (.566)
12.40 (.488)
4
3
Data and specifications subject to change without notice.
This product has been designed for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 05/04
10
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