IRFL4310TRPBF [INFINEON]
HEXFET® Power MOSFET; HEXFET®功率MOSFET
| 型号： | IRFL4310TRPBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET® Power MOSFET |
| 文件： | 总9页 (文件大小：667K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95144
IRFL4310PbF
HEXFET® Power MOSFET
l Surface Mount
l Dynamic dv/dt Rating
l Fast Switching
D
VDSS = 100V
l Ease of Paralleling
l Advanced Process Technology
l Ultra Low On-Resistance
l Lead-Free
RDS(on) = 0.20Ω
G
ID = 1.6A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremelylow on-resistancepersiliconarea. Thisbenefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
knownfor,providesthedesignerwithanextremelyefficient
andreliabledeviceforuseinawidevarietyofapplications.
The SOT-223 package is designed for surface-mount
usingvaporphase,infrared,orwavesolderingtechniques.
Its unique package design allows for easy automatic pick-
and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application.
S O T -223
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V**
Continuous Drain Current, VGS @ 10V*
Continuous Drain Current, VGS @ 10V*
Pulsed Drain Current
2.2
1.6
A
1.3
13
PD @TA = 25°C
PD @TA = 25°C
Power Dissipation (PCB Mount)**
Power Dissipation (PCB Mount)*
Linear Derating Factor (PCB Mount)*
Gate-to-Source Voltage
2.1
W
W
1.0
8.3
mW/°C
V
VGS
± 20
47
EAS
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
IAR
1.6
EAR
Repetitive Avalanche Energy*
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
0.10
5.0
mJ
V/ns
°C
dv/dt
TJ,TSTG
-55 to + 150
Thermal Resistance
Parameter
Junction-to-Amb. (PCB Mount, steady state)*
Junction-to-Amb. (PCB Mount, steady state)**
Typ.
93
48
Max.
120
60
Units
RθJA
RθJA
°C/W
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
www.irf.com
1
04/22/04
IRFL4310PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-SourceBreakdownVoltage
Min. Typ. Max. Units
100 ––– –––
––– 0.12 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
V
∆V(BR)DSS/∆TJ BreakdownVoltageTemp.Coefficient
––– ––– 0.20
Ω
VGS = 10V, ID = 1.6A
RDS(on)
StaticDrain-to-SourceOn-Resistance
VGS(th)
gfs
Gate Threshold Voltage
2.0
1.5
––– 4.0
––– –––
V
S
VDS = VGS, ID = 250µA
Forward Transconductance
VDS = 50V, ID = 0.80 A
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
VDS = 100V, VGS = 0V
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
VDS = 80V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 20V
VGS = -20V
ID = 1.6A
Qg
–––
–––
–––
–––
–––
–––
17
2.1 3.1
7.8 12
25
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
nC VDS = 80V
VGS = 10V, See Fig. 6 and 13
7.8 –––
18 –––
VDD = 50V
RiseTime
ID = 1.6A
ns
pF
td(off)
tf
Turn-Off Delay Time
Fall Time
34
20
––– 330 –––
–––
RG = 6.2 Ω
–––
–––
RD = 31 Ω, See Fig. 10
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
–––
–––
92 –––
54 –––
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
ContinuousSourceCurrent
(BodyDiode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
IS
––– ––– 0.91
A
showing the
ISM
Pulsed Source Current
(Body Diode)
integralreverse
–––
13
–––
p-njunctiondiode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
––– ––– 1.3
––– 72 110
––– 210 320
V
TJ = 25°C, IS = 1.6A, VGS = 0V
TJ = 25°C, IF = 1.6A
ns
Qrr
nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ 1.6A, di/dt ≤ 340A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
VDD = 25V, starting TJ = 25°C, L = 9.2 mH
RG = 25Ω, IAS = 3.2A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
www.irf.com
IRFL4310PbF
www.irf.com
3
IRFL4310PbF
4
www.irf.com
IRFL4310PbF
www.irf.com
5
IRFL4310PbF
6
www.irf.com
IRFL4310PbF
www.irf.com
7
IRFL4310PbF
SOT-223 (TO-261AA) Package Outline
Dimensions are shown in milimeters (inches)
SOT-223 (TO-261AA) Part Marking Information
HEXFET PRODUCT MARKING
THIS IS AN IRFL014
LOT CODE
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
FL014
314P
AXXXX
A = ASSEMBLY SITE
CODE
DATE CODE
(YYWW)
YY = YEAR
WW = WEEK
BOTTOM
TOP
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
8
www.irf.com
IRFL4310PbF
SOT-223 (TO-261AA) Tape & Reel Information
4.10 (.161)
3.90 (.154)
0.35 (.013)
0.25 (.010)
1.85 (.072)
1.65 (.065)
2.05 (.080)
1.95 (.077)
TR
7.55 (.297)
7.45 (.294)
16.30 (.641)
15.70 (.619)
7.60 (.299)
7.40 (.292)
1.60 (.062)
1.50 (.059)
TYP.
FEED D IR EC T IO N
2.30 (.090)
2.10 (.083)
7.10 (.279)
6.90 (.272)
12.10 (.475)
11.90 (.469)
NO TE S
1. C O NT RO LLIN G D IM E N SIO N : MILLIM E TER .
2. O U TLIN E C O N FO R M S TO E IA-481 EIA -541.
:
&
3. E AC H O 330.00 (13.00) R E EL CO N TA IN S 2,500 D E VIC ES .
13.20 (.519)
12.80 (.504)
15.40 (.607)
11.90 (.469)
4
330.00
(13.000)
M AX.
50.00 (1.969)
MIN .
18.40 (.724)
M AX.
N O TES
:
1. O UT LIN E C O MFO R MS TO EIA-418-1.
2. CO N TR O LLIN G D IM EN SIO N: M ILLIM ETER ..
3. DIM EN SIO N M EAS UR ED
14.40 (.566)
12.40 (.488)
4
@ HU B.
4. IN CLU D ES FLA NG E D ISTO R TIO N
@
O U TER ED G E .
3
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 04/04
www.irf.com
9
相关型号：
IRFL4315TR
Power Field-Effect Transistor, 2.6A I(D), 150V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN
INFINEON
IRFL4315TRPBF
Power Field-Effect Transistor, 2.6A I(D), 150V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE PACKAGE-4
INFINEON
©2020 ICPDF网 联系我们和版权申明