IRFM064UPBF [INFINEON]

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型号：	IRFM064UPBF
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PD - 90875A

IRFM064

60V, N-CHANNEL

POWER MOSFET

THRU-HOLE (TO-254AA)

HEXFET^®MOSFET TECHNOLOGY

Product Summary

Part Number

RDS(on)

IRFM064

0.017 Ω

35A*

HEXFET^®MOSFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors. The

efficient geometry design achieves very low on-state re-

sistance combined with high transconductance. HEXFET

transistors also feature all of the well-established advan-

tages of MOSFETs, such as voltage control, very fast switch-

ing, ease of paralleling and electrical parameter temperature

stability. They are well-suited for applications such as switch-

ing power supplies, motor controls, inverters, choppers,

audio amplifiers, high energy pulse circuits, and virtually

any application where high reliability is required. The

HEXFET transistor’s totally isolated package eliminates the

need for additional isolating material between the device

and the heatsink. This improves thermal efficiency and

reduces drain capacitance.

TO-254AA

Features:

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Electrically Isolated

Dynamic dv/dt Rating

Light-weight

Absolute Maximum Ratings

Parameter

Units

@ V

= 10V, T = 25°C

Continuous Drain Current

35*

= 10V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

380

@ T = 25°C

250

W/°C

Linear Derating Factor

2.0

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

620

—

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

—

V/ns

dv/dt

4.5

-55 to 150

Storage Temperature Range

^oC

STG

300 ( 0.063 in.(1.6mm) from case for 10s)

9.3 (Typical)

Lead Temperature

Weight

*Current is limited by pin diameter

For footnotes refer to the last page

www.irf.com

1/29/02

IRFM064

Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)

Parameter

Min Typ Max Units

Test Conditions

DSS

Drain-to-Source Breakdown Voltage

—

= 0V, I = 1.0mA

V/°C Reference to 25°C, I = 1.0mA

∆BV

/∆T Temperature Coefficient of Breakdown

0.048

DSS

Voltage

Static Drain-to-Source On-State

Resistance

—

0.017

= 10V, I = 35A

GS D

Ω

DS(on)

➀

Gate Threshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

2.0

—

4.0

—

S ( )

= V , I = 250µA

GS(th)

Ω

> 15V, I

= 35A ➀

= 48V ,V =0V

DS GS

DSS

µA

—

250

= 48V,

= 0V, T = 125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

—

6.8

100

-100

240

= 20V

GSS

= -20V

=10V, I = 35A

d(on)

= 30V

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

Rise Time

= 30V, I = 35A,

120

=10V, R = 2.35Ω

GS G

Turn-Off Delay Time

FallTime

d(off)

+ L

Total Inductance

—

Measured from drain lead (6mm/

0.25in. from package) to source lead

(6mm/0.25in. from package)

Input Capacitance

—

7400

3200

540

—

= 0V, V

= 25V

iss

f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

oss

rss

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

Pulse Source Current (Body Diode) ➀

Diode Forward Voltage

—

35*

380

3.0

T = 25°C, I = 35A, V

= 0V ➀

Reverse Recovery Time

Reverse Recovery Charge

220

1.1

µC

T = 25°C, I = 35A, di/dt ≤ 100A/µs

≤ 50V ➀

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .

S D

*Current is limited by pin diameter

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

Junction-to-Case

Case-to-Sink

—

0.21

—

0.5

—

thJC

thJCS

thJA

°C/W

Junction-to-Ambient

Typical socket mount

Note: Corresponding Spice and Saber models are available on the G&S Website.

For footnotes refer to the last page

www.irf.com

IRFM064

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs.Temperature

www.irf.com

IRFM064

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-SourceVoltage

Drain-to-SourceVoltage

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

ForwardVoltage

www.irf.com

IRFM064

R_D

V_DS

V_GS

D.U.T.

R_G

⁺V_DD

10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

90%

10%

Fig 9. Maximum Drain Current Vs.

d(on)

d(off)

CaseTemperature

Fig 10b. Switching Time Waveforms

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com

IRFM064

15V

DRIVER

D S

D.U .T

D D

20V

0.01

Ω

Fig 12a. Unclamped Inductive Test Circuit

(BR)D SS

Fig 12c. Maximum Avalanche Energy

Vs. DrainCurrent

Current Regulator

Fig 12b. Unclamped Inductive Waveforms

Same Type as D.U.T.

50KΩ

.2µF

12V

.3µF

10 V

D.U.T.

3mA

Charge

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

www.irf.com

IRFM064

Footnotes:

➀➀ I

≤ 35A, di/dt ≤ 300A/µs,

➀➀ Repetitive Rating; Pulse width limited by

≤ 60V, T ≤ 125°C

maximum junction temperature.

➀➀➀V

= 25V, starting T = 25°C, L=1.0mH

Peak I = 35A, V

➀➀➀Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

= 10V

Case Outline and Dimensions —TO-254AA

0.12 [.005]

6.60 [.260]

6.32 [.249]

6.60 [.260]

6.32 [.249]

13.84 [.545]

13.59 [.535]

13.84 [.545]

13.59 [.535]

3.78 [.149]

3.53 [.139]

3.78 [.149]

3.53 [.139]

1.27 [.050]

1.02 [.040]

1.27 [.050]

1.02 [.040]

20.32 [.800]

20.07 [.790]

20.32 [.800]

20.07 [.790]

17.40 [.685]

16.89 [.665]

17.40 [.685]

16.89 [.665]

13.84 [.545]

13.59 [.535]

22.73 [.895]

21.21 [.835]

13.84 [.545]

13.59 [.535]

R 1.52 [.060]

4.06 [.160]

3.56 [.140]

17.40 [.685]

16.89 [.665]

0.84 [.033]

MAX.

4.82 [.190]

3.81 [.150]

1.14 [.045]

0.89 [.035]

3.81 [.150]

1.14 [.045]

0.89 [.035]

0.36 [.014]

B A

3.81 [.150]

0.36 [.014]

B A

NOTES:

PIN ASSIGNMENTS

1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].

3. CONTROLLING DIMENSION: INCH.

DRAIN

SOURCE

GATE

4. CONFORMS TO JEDEC OUTLINE TO-254AA.

CAUTION

BERYLLIA WARNING PER MIL-PRF-19500

Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them

which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that

will produce fumes containing beryllium.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 01/02

www.irf.com

IRFM064UPBF [INFINEON]

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