IRFN054 [INFINEON]
POWER MOSFET N-CHANNEL(BVdss=60V, Rds(on)=0.020ohm, Id=55A*); 功率MOSFET N沟道（ BVDSS = 60V ， RDS（ON） = 0.020ohm ，ID = 55A * ）
| 型号： | IRFN054 |
| 厂家： | 
Infineon |
| 描述： | POWER MOSFET N-CHANNEL(BVdss=60V, Rds(on)=0.020ohm, Id=55A*) |
| 文件： | 总6页 (文件大小：187K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Provisional Data Sheet No. PD-9.1543A
HEXFET® POWER MOSFET
IRFN054
N-CHANNEL
60 Volt, 0.020Ω HEXFET
Product Summary
Part Number
BVDSS
RDS(on)
ID
HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transis-
tors. The efficient geometry achieves very low on-
state resistance combined with high transconductance.
IRFN054
60V
0.020Ω
55A*
Features:
HEXFET transistors also feature all of the well-es-
tablish advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are
well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio
amplifiers, and high energy pulse circuits.
■ Avalanche Energy Rating
■ Dynamic dv/dt Rating
■ Simple Drive Requirements
■ Ease of Paralleling
■ Hermetically Sealed
■ Surface Mount
■ Light-weight
The Surface Mount Device (SMD-1) package repre-
sents another step in the continual evolution of sur-
face mount technology. The SMD-1 will give
designers the extra flexibility they need to increase
circuit board density. International Rectifier has en-
gineered the SMD-1 package to meet the specific
needs of the power market by increasing the size of
the termination pads, thereby enhancing thermal and
electrical performance.
Absolute Maximum Ratings
Parameter
= 10V, T = 25°C Continuous Drain Current
C
IRFN054
55*
Units
I
D
@ V
GS
A
I
@ V
= 10V, T = 100°C Continuous Drain Current
40
D
GS
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
256
DM
@ T = 25°C
P
150
W
W/K ➄
V
D
C
1.2
V
±20
GS
E
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
480
55
mJ
AS
AR
I
A
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
15
mJ
AR
dv/dt
4.5
V/ns
T
-55 to 150
J
oC
g
T
Storage Temperature Range
STG
(for 5 seconds)
2.6 (typical)
Package Mounting Surface Temperature
Weight
300
To Order
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IRFN054 Device
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Index
Next Data Sheet
Parameter
Min. Typ. Max. Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
60
—
—
—
—
V
V
= 0V, I = 1.0 mA
D
DSS
GS
V/°C Reference to 25°C, I = 1.0 mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.68
DSS
J
D
Voltage
➃
= 10V, I = 40A
D
R
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
ForwardTransconductance
Zero Gate Voltage Drain Current
—
—
2.0
20
—
—
—
—
—
—
—
0.020
0.031
4.0
—
25
V
V
DS(on)
GS
GS
Ω
V
S ( )
= 10V, I = 55A
D
V
g
V
V
= V , I = 250µA
GS(th)
fs
DS
DS
GS
D
Ω
> 15V, I
= 40A ➃
DS
I
V
= 0.8 x Max Rating,V = 0V
GS
DSS
DS
µA
—
250
V
= 0.8 x Max Rating
DS
V
= 0V, T = 125°C
J
GS
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
—
—
39
20
34
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.0
100
-100
88
45
105
33
180
100
100
—
V
= 20V
= -20V
GSS
GS
nA
nC
I
V
GS
GSS
Q
Q
Q
V
=10V, I = 55A
GS D
= Max. Rating x 0.5
g
gs
gd
V
DS
see figures 6 and 13
= 30V, I = 55A,
t
V
DD
d(on)
D
t
R
G
= 2.35Ω, VGS = 10V
r
ns
t
d(off)
t
L
see figure 10
f
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
Modified MOSFET
symbol showing the
internal inductances.
D
S
nH
pF
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
L
Internal Source Inductance
—
4.1
—
C
C
C
Input Capacitance
Output Capacitance
ReverseTransfer Capacitance
—
—
—
1660
2000
340
—
—
—
V
= 0V, V
f = 1.0 MHz
see figure 5
= 25V
DS
iss
oss
rss
GS
Source-Drain Diode Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
—
—
—
—
55
256
Modified MOSFET symbol showing the
integral reverse p-n junction rectifier.
S
SM
A
V
t
Q
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
2.5
280
2.2
V
ns
µC
T = 25°C, I = 55A, V
= 0V ➃
j
SD
rr
RR
S
GS
T = 25°C, I = 55A, di/dt ≤ 100A/µs
j
F
V
≤ 50V ➃
DD
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min. Typ. Max. Units
Test Conditions
R
R
Junction-to-Case
—
—
0.83
thJC
Junction-to-PC Board
—
TBD
—
K/W Soldered to a copper clad PC board
thJ-PCB
To Order
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IRFN054 Device
Index
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Fig. 1 — Typical Output Characteristics
TC = 25°C
Fig. 2 — Typical Output Characteristics
TC = 150°C
I
= 64A
D
Fig. 3 — Typical Transfer Characteristics
Fig. 4 — Normalized On-Resistance Vs.Temperature
I
= 55A
D
Fig. 5 — Typical Capacitance Vs. Drain-to-Source
Voltage
Fig. 6 — Typical Gate Charge Vs. Gate-to-Source
Voltage
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IRFN054 Device
Index
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1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T
= 25°C
°
= 150 C
C
T
J
Single Pulse
1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
DS
Fig. 8 — Maximum Safe Operating Area
Fig. 7 — Typical Source-to-Drain Diode Forward
Voltage
70
60
50
40
30
20
10
0
LIMITED BY PACKAGE
25
50
75
100
125
150
T
, CASETEMPERATURE (°C)
C
Fig. 9 — Maximum Drain Current Vs. Case Temperature
Fig. 10b — Switching Time Waveforms
Fig. 10a — Switching Time Test Circuit
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IRFN054 Device
Index
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1
0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
0.01
t
1
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
DM
x
Z
+ T
C
J
thJC
0.1
0.001
0.00001
0.0001
0.001
0.01
1
t , Rectangular Pulse Duration (sec)
1
Fig. 11 — Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration
Fig. 12b — Unclamped Inductive Waveforms
Fig. 12a — Unclamped Inductive Test Circuit
PEAK I = 55A
L
V
= 25V
DD
Fig. 12c — Max. Avalanche Energy vs. Current
Fig. 13a — Gate Charge Test Circuit
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IRFN054 Device
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➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
(see figure 11)
➁ @ V
= 25V, Starting T = 25°C,
J
DD
= [0.5
2
E
L
(I ) [BV
/(BV
-V )]
DSS DD
AS
*
*
*
DSS
L
Peak I = 55A, V
= 10V, 25 ≤ R ≤ 200Ω
L
GS
G
➂ I
SD
≤ 55A, di/dt ≤ 200A/µs,
V
≤ BV
, T ≤ 150°C
DSS J
DD
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➄ K/W = °C/W
W/K = W/°C
Fig. 13b — Basic Gate Charge Waveform
Case Outline and Dimensions — SMD-1
All dimensions in millimeters (inches)
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Data and specifications subject to change without notice.
9/96
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