IRFN3710 [INFINEON]

TRANSISTOR N-CHANNEL(BVdss=100V, Rds(on)=0.028ohm, Id=45A); 晶体管N沟道（ BVDSS = 100V ， RDS（ON） = 0.028ohm ，ID = 45A ）


型号：	IRFN3710
厂家：	Infineon
描述：	TRANSISTOR N-CHANNEL(BVdss=100V, Rds(on)=0.028ohm, Id=45A) 晶体管N沟道（ BVDSS = 100V ， RDS（ON） = 0.028ohm ，ID = 45A ）晶体晶体管
文件：	总4页 (文件大小：91K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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Provisional Data Sheet No. PD-9.1417

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET^®TRANSISTOR

IRFN3710

N-CHANNEL

Product Summary

100 Volt, 0.028Ω, HEXFET

Part Number

BVDSS

RDS(on)

Generation 5 HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

the lowest possible on-resistance per silicon area.

This benefit, combined with the fast switching speed

and ruggedized device design for which HEXFETs

are well known, provides the designer with an ex-

tremely efficient device for use in a wide variety of

applications.

IRFN3710

100V

0.028Ω

45A

Features:

Surface Mount

Small Footprint

Alternative to TO-3 Package

Hermetically Sealed

Avalanche Energy Rating

Dynamic dv/dt Rating

Simple Drive Requirements

Lightweight

The Surface Mount Device 1 (SMD-1) package rep-

resents anothther step in the continual evolution of

surface mount technology. Designed to be a close

replacement for the TO-3 package, the SMD-1 will

give designers the extra flexibility they need to in-

crease circuit board density.International Rectifier has

engineered the SMD-1 package to meet the specific

needs of the power market by increasing the size of

the termination pads, thereby enhancing thermal and

electical performance.

Absolute Maximum Ratings

Parameter

= 10V, T = 25°C Continuous Drain Current

IRFN3710

Units

@ V

= 10V, T = 100°C Continuous Drain Current

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

180

@ T = 25°C

125

W/K ꢀ

1.0

±20

Single Pulse Avalanche Energy

Avalanche Current

690

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

12.5

5.0

dv/dt

V/ns

-55 to 150

^oC

Storage Temperature Range

Package Mounting Surface Temperature

Weight

STG

300 (for 5 sec.)

2.6 (typical)

To Order

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IRFN3710 Device

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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min. Typ. Max. Units

Test Conditions

Drain-to-Source Breakdown Voltage

100

—

= 0V, I = 1.0 mA

DSS

∆BV

/∆T Temp. Coefficient of Breakdown Voltage

—

0.120

—

0.028

V/°C Reference to 25°C, I = 1.0 mA

DSS

Static Drain-to-Source

= 12V, I =28A

GS D

DS(on)

Ω

On-State Resistance

—

2.0

—

0.032

4.0

—

= 12V, I = 45A

GS D

Gate Threshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

= V , I = 250 mA

GS(th)

S (

)

> 15V, I

= 28A

=0.8 x Max Rating,V =0V

DS GS

DSS

µA

—

250

= 0.8 x Max Rating

= 0V, T = 125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

—

100

-100

190

= 20V

GSS

= -20V

—

=10V, I =45 A

GS D

V = Max. Rating x 0.5

Gate-to-Source Charge

Gate-to-Drain (“Miller”) Charge

Turn-On Delay Time

—

d(on)

8.7

—

= 50V, I =45A,

DD D

Rise Time

—

= 4.3Ω

Turn-Off Delay Time

—

d(off)

Fall Time

—

Measured from the

Internal Drain Inductance

—

Modified MOSFET

symbol showing the

internal inductances.

drain lead, 6mm (0.25

in.) from package to

center of die.

Measured from the

source lead, 6mm

(0.25 in.) from package

to source bonding pad.

Internal Source Inductance

—

8.7

—

Input Capacitance

—

3000

640

—

= 0V, V

f = 1.0 MHz

= 25V

iss

Output Capacitance

oss

rss

Reverse Transfer Capacitance

330

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IRFN3710 Device

Source-Drain Diode Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Test Conditions

Continuous Source Current (Body Diode)

—

Modified MOSFET symbol showing the

integral reverse p-n junction rectifier.

Pulse Source Current (Body Diode)

180

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

—

1.3

210

1.7

T = 25°C, I = 45A, V

= 0V

µC

T = 25°C, I = 45A, di/dt ≤ 100A/µs

≤ 50V

Forward Turn-OnTime Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .

S D

Thermal Resistance

Parameter

Min. Typ. Max. Units Test Conditions

Junction-to-Case

—

1.0

—

thJC

K/W ꢀ

Junction-to-PC Board

TBD

Soldered to a copper-clad PC board

thJ-PCB

Repetitive Rating; Pulse width limited by

maximum junction temperature.

≤ 45A, di/dt ≤ 460 A/µs,

≤ BV

, T ≤ 150°C

DSS J

Refer to current HEXFET reliability report.

Suggested RG = 2.35Ω

@ V

= 25V, Starting T = 25°C,

= [0.5

Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

(I ²) [BV

/(BV

-V )]

DSS DD

DSS

ꢀ K/W = °C/W

Peak I = 45A, V

= 10V, 25 ≤ R ≤ 200Ω

W/K = W/°C

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IRFN3710 Device

Case Outline and Dimensions — SMD-1

All dimensions in millimeters (inches)

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371

http://www.irf.com/

Data and specifications subject to change without notice.

4/96

To Order

IRFN3710 [INFINEON]

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