IRFP064VPBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRFP064VPBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总8页 (文件大小：169K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95501
IRFP064VPbF
HEXFET® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Optimized for SMPS Applications
l Lead-Free
D
VDSS = 60V
RDS(on) = 5.5mΩ
G
ID = 130A
S
Description
AdvancedHEXFET® PowerMOSFETsfromInternational
Rectifierutilizeadvancedprocessingtechniquestoachieve
extremelylowon-resistancepersiliconarea. Thisbenefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
knownfor,providesthedesignerwithanextremelyefficient
andreliabledeviceforuseinawidevarietyofapplications.
TheTO-247packageispreferredforcommercial-industrial
applications where higher power levels preclude the use
of TO-220 devices. The TO-247 is similar but superior to
the earlier TO-218 package because of its isolated
mounting hole.
TO-247AC
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
130
95
A
520
250
1.7
PD @TC = 25°C
Power Dissipation
W
W/°C
V
Linear Derating Factor
VGS
IAR
Gate-to-Source Voltage
± 20
130
25
Avalanche Current
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
mJ
V/ns
4.7
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
Units
RθJC
RθCS
RθJA
0.60
–––
40
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.24
–––
°C/W
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1
07/06/04
IRFP064VPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
60 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.067 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 5.5
mΩ VGS = 10V, ID = 78A
2.0
88
––– 4.0
––– –––
V
VDS = VGS, ID = 250µA
VDS = 25V, ID = 78A
VDS = 60V, VGS = 0V
Forward Transconductance
S
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 260
––– ––– 68
––– ––– 94
IDSS
Drain-to-Source Leakage Current
µA
nA
VDS = 48V, VGS = 0V, TJ = 150°C
VGS = 20V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
ID = 130A
Qg
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 48V
VGS = 10V, See Fig. 6 and 13
–––
26 –––
VDD = 30V
––– 200 –––
––– 100 –––
––– 150 –––
ID = 130A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 4.3Ω
VGS = 10V, See Fig. 10
Between lead,
6mm (0.25in.)
from package
D
5.0
LD
LS
Internal Drain Inductance
Internal Source Inductance
–––
–––
–––
–––
nH
G
13
and center of die contact
VGS = 0V
S
Ciss
Coss
Crss
EAS
Input Capacitance
––– 6760 –––
––– 1330 –––
––– 290 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
pF
ƒ = 1.0MHz, See Fig. 5
––– 1880ꢀ310 mJ IAS = 130A, L = 37µH
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
IS
––– –––
––– –––
130
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
520
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– ––– 1.2
––– 94 140
––– 360 540
V
TJ = 25°C, IS = 130A, VGS = 0V
TJ = 25°C, IF = 130A
ns
Qrr
ton
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 400µs; duty cycle ≤ 2%.
ꢀ This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to TJ = 175°C .
Calculated continuous current based on maximum allowable
max. junction temperature. (See fig. 11)
Starting TJ = 25°C, L = 260µH
RG = 25Ω, IAS = 50A. (See Figure 12)
ISD ≤ 130A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
junction temperature. Package limitation current is 90A.
2
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IRFP064VPbF
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
4.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T = 175 C
J
°
T = 25 C
J
1
0.1
1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
3.0
70A
=
I
D
2.5
2.0
1.5
1.0
0.5
0.0
°
T = 175 C
J
100
10
1
°
T = 25 C
J
V
= 50V
DS
20µs PULSE WIDTH
V
=10V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
4.0
5.0
6.0
7.0
8.0 9.0
10.0
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRFP064VPbF
20
16
12
8
12000
I
D
= 130A
V
= 0V,
f = 1 MHZ
GS
V
V
= 48V
= 30V
C
= C + C
,
C
ds
SHORTED
DS
DS
iss
gs
gd
C
= C
10000
8000
6000
4000
2000
0
rss
gd
C
= C + C
oss
ds
gd
Ciss
Coss
4
FOR TEST CIRCUIT
SEE FIGURE 13
Crss
10
0
0
50
100
150
200
250
300
1
100
Q , Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100
10
1
°
T = 175 C
J
100µsec
1msec
°
T = 25 C
J
Tc = 25°C
Tj = 175°C
Single Pulse
10msec
100
V
= 0 V
GS
2.0
0.1
0.0
1
0.4
0.8
1.2
1.6
2.4
1
10
1000
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-toSource Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRFP064VPbF
140
120
100
80
RD
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
60
40
Fig 10a. Switching Time Test Circuit
V
DS
20
90%
0
25
50
75
100
125
150
175
°
T , Case Temperature ( C)
C
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
P
2
DM
t
1
t
2
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
x Z
+ T
thJC C
J
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFP064VPbF
600
450
300
150
0
I
15V
D
TOP
53A
92A
BOTTOM 130A
DRIVER
+
L
V
DS
D.U.T
R
G
V
DD
-
I
A
AS
20V
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
°
Starting T , Junction Temperature ( C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
+
VGS
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Current Sampling Resistors
Charge
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRFP064VPbF
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T*
-
+
-
-
+
RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
VDD
VGS
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
[
=10V
] ***
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
]
[
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
[
]
SD
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For N-channel HEXFET® power MOSFETs
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7
IRFP064VPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
EXAMPLE: THIS IS AN IRFPE30
WIT H AS S E MB L Y
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE 5657
IRFPE30
035H
57
ASS EMBLED ON WW 35, 2000
IN THE ASSEMBLY LINE "H"
56
DAT E CODE
YEAR 0 = 2000
WE E K 35
Note: "P" in assembly line
position indicates "Lead-Free"
ASSEMBLY
LOT CODE
LINE H
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/04
8
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