IRFP22N60K [INFINEON]
SMPS MOSFET; 开关电源MOSFET
| 型号： | IRFP22N60K |
| 厂家： | 
Infineon |
| 描述： | SMPS MOSFET |
| 文件： | 总8页 (文件大小：172K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94414A
IRFP22N60K
SMPS MOSFET
HEXFET® Power MOSFET
Applications
VDSS
600V
RDS(on) typ.
ID
22A
l Hard Switching Primary or PFS Switch
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
l Motor Drive
240mΩ
Benefits
l Low Gate Charge Qg results in Simple Drive Requirement
l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
l Fully Characterized Capacitance and Avalanche Voltage and
Current
l Enhanced Body Diode dv/dt Capability
TO-247AC
Absolute Maximum Ratings
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Max.
22
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
14
A
88
370
PD @TC = 25°C
Power Dissipation
W
W/°C
V
Linear Derating Factor
2.9
VGS
dv/dt
TJ
Gate-to-Source Voltage
± 30
Peak Diode Recovery dv/dt
Operating Junction and
18
V/ns
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
300
°C
Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy
Typ.
Max.
380
22
Units
mJ
–––
–––
–––
IAR
Avalanche Current
A
EAR
Repetitive Avalanche Energy
37
mJ
Thermal Resistance
Symbol
Parameter
Junction-to-Case
Typ.
–––
Max.
0.34
–––
40
Units
RθJC
RθCS
RθJA
Case-to-Sink, Flat, Greased Surface
0.24
–––
°C/W
Junction-to-Ambient
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1
8/26/04
IRFP22N60K
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
600 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.30 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 240 280 mΩ VGS = 10V, ID = 13A
VGS(th)
Gate Threshold Voltage
3.0
––– 5.0
V
VDS = VGS, ID = 250µA
DS = 600V, VGS = 0V
––– ––– 50
––– ––– 250
––– ––– 100
––– ––– -100
µA
V
IDSS
Drain-to-Source Leakage Current
µA VDS = 480V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
VGS = 30V
nA
IGSS
V
GS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
gfs
11
––– –––
S
VDS = 50V, ID = 13A
ID = 22A
Qg
––– ––– 150
––– ––– 45
––– ––– 76
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC
VDS = 480V
VGS = 10V
–––
–––
–––
–––
26 –––
99 –––
48 –––
37 –––
VDD = 300V
ID = 22A
ns
pF
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.2 Ω
VGS = 10V
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
––– 3570 –––
––– 350 –––
VGS = 0V
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
VDS = 25V
–––
––– 4710 –––
––– 92 –––
––– 180 –––
36 –––
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 480V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 480V ꢀ
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
D
IS
Continuous Source Current
(Body Diode)
––– ––– 22
MOSFET symbol
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
––– ––– 88
integral reverse
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
––– ––– 1.5
––– 590 890
––– 670 1010
V
TJ = 25°C, IS = 22A, VGS = 0V
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
IF = 22A
ns
Reverse Recovery Time
Reverse Recovery Charge
di/dt = 100A/µs
––– 7.2
––– 8.5
––– 26
11
13
39
µC
A
Qrr
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature.
ꢀ Coss eff. is a fixed capacitance that gives the same charging time
Starting TJ = 25°C, L = 1.5mH, RG = 25Ω,
as Coss while VDS is rising from 0 to 80% VDSS
.
IAS = 22A
Rθ is measured at TJ approximately 90°C
ISD ≤ 22A, di/dt ≤ 540 A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C.
,
2
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IRFP22N60K
100
10
100
10
1
VGS
15V
12V
10V
VGS
15V
TOP
TOP
12V
10V
8.0V
7.0V
6.0V
5.5V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
BOTTOM5.0V
1
5.0V
0.1
5.0V
0.01
0.001
20µs PULSE WIDTH
Tj = 25°C
20µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.0
100.00
22A
=
I
D
T
= 150°C
2.5
2.0
1.5
1.0
0.5
0.0
J
10.00
1.00
0.10
0.01
T
= 25°C
J
V
= 50V
DS
20µs PULSE WIDTH
V
= 10V
GS
-60 -40 -20
0
20
40
60
80 100 120 140 160
5.0
6.0
7.0
8.0
9.0
10.0
°
T , Junction Temperature
( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRFP22N60K
20
16
12
8
100000
V
= 0V,
= C
f = 1 MHZ
+ C C
GS
I = 22A
V
= 480V
D
C
,
DS
iss
gs
gd
ds
SHORTED
VDS= 300V
VDS= 120V
C
= C
rss
gd
10000
1000
100
C
= C + C
oss
ds
gd
Ciss
Coss
Crss
4
0
10
0
40
G
80
120
160
1
10
100
1000
Q
Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100.0
10.0
1.0
1000
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100
10
1
T
= 150°C
J
100µsec
1msec
T
= 25°C
J
Tc = 25°C
10msec
Tj = 150°C
Single Pulse
V
= 0V
GS
0.1
0.1
0.2
0.4
V
0.6
0.8
1.0
1.2
1.4
1
10
100
1000
10000
, Source-toDrain Voltage (V)
V
, Drain-toSource Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRFP22N60K
RD
25
20
15
10
5
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
25
50
T
75
100
125
150
°
( C)
, Case Temperature
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
0.01
t
1
t
2
Notes:
1. Duty factor D =
t
/ t
1
2
2. Peak T
= P
x
Z
+ T
J
DM
thJC
C
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFP22N60K
800
I
D
TOP
9.8A
14A
22A
BOTTOM
15V
600
400
200
0
DRIVER
+
L
V
DS
D.U.T
R
G
V
DD
-
I
A
AS
20V
0.01
Ω
t
p
Fig 12c. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
( C)
Starting T , Junction Temperature
J
Fig 12a. Maximum Avalanche Energy
V
(BR)DSS
Vs. Drain Current
t
p
I
AS
Fig 12d. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.2µF
12V
VGS
.3µF
Q
Q
GD
GS
+
V
DS
D.U.T.
-
V
V
GS
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Basic Gate Charge Waveform
Fig 13a. Gate Charge Test Circuit
6
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IRFP22N60K
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
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7
IRFP22N60K
TO-247AC Package Outline Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
EXAMPLE: THIS IS AN IRFPE30
WIT H AS S E MBLY
PART NUMBER
INTERNAT IONAL
RECTIFIER
LOGO
LOT CODE 5657
IRFPE30
035H
57
ASSEMBLED ON WW35, 2000
IN THE ASSEMBLY LINE "H"
56
DATE CODE
YEAR 0 = 2000
WEEK 35
Note: "P" in assembly line
position indicates "Lead-Free"
AS S E MB L Y
LOT CODE
LINE H
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/04
8
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