IRFP23N50L [INFINEON]
Power MOSFET(Vdss=500V, Rds(on)=0.190ohm, Id=23A); 功率MOSFET （ VDSS = 500V ， RDS（ON） = 0.190ohm ，ID = 23A ）
| 型号： | IRFP23N50L |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=500V, Rds(on)=0.190ohm, Id=23A) |
| 文件： | 总8页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94230
SMPS MOSFET
IRFP23N50L
HEXFET® Power MOSFET
Applications
VDSS
500V
RDS(on) typ. Trr typ. ID
l Switch Mode Power Supply (SMPS)
l UninterruptIble Power Supply
l High Speed Power Switching
l Motor Drive
0.190Ω
170ns
23A
Benefits
l Low Gate Charge Qg results in Simple Drive Requirement
l Improved Gate, Avalanche and Dynamicdv/dt Ruggedness
l Fully Characterized Capacitance and Avalanche Voltage and
Current
l Enhanced Body Diode dv/dt Capability
TO-247AC
Absolute Maximum Ratings
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Max.
23
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
15
A
92
370
PD @TC = 25°C
Power Dissipation
W
W/°C
V
Linear Derating Factor
2.9
VGS
dv/dt
TJ
Gate-to-Source Voltage
± 30
Peak Diode Recovery dv/dt
Operating Junction and
14
V/ns
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
300
°C
Mounting torqe, 6-32 or M3 screw
10 lbf•in (1.1N•m)
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
D
IS
Continuous Source Current
(Body Diode)
––– ––– 23
MOSFET symbol
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
––– ––– 92
integral reverse
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
––– ––– 1.5
––– 170 250
––– 220 330
––– 560 840
V
TJ = 25°C, IS = 14A, VGS = 0V
TJ = 25°C
IF = 23A
di/dt = 100A/µs
ns
Reverse Recovery Time
Reverse Recovery Charge
TJ = 125°C
nC TJ = 25°C
Qrr
––– 980 1500 nC TJ = 125°C
––– 7.6 11
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
A
Typical SMPS Topologies
l
Bridge Converters
l All Zero Voltage Switching
www.irf.com
1
11/28/01
IRFP23N50L
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
500 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.27 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– 0.190 0.235
3.0 ––– 5.0
––– ––– 50
––– –––
Ω
VGS = 10V, ID = 14A
V
VDS = VGS, ID = 250µA
V
DS = 500V, VGS = 0V
VDS = 400V, VGS = 0V, TJ = 125°C
GS = 30V
VGS = -30V
µA
nA
IDSS
IGSS
Drain-to-Source Leakage Current
2
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 100
––– ––– -100
V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
gfs
12 ––– –––
S
VDS = 50V, ID = 14A
ID = 23A
Qg
––– ––– 150
––– ––– 44
––– ––– 72
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 400V
VGS = 10V, See Fig. 6 and 13
–––
–––
–––
–––
26 –––
94 –––
53 –––
45 –––
VDD = 250V
ID = 23A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.0Ω
VGS = 10V,See Fig. 10
VGS = 0V
Ciss
Coss
Crss
Coss
Coss
Input Capacitance
––– 3600 –––
––– 380 –––
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
VDS = 25V
–––
37 –––
pF
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 400V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 400V ꢀ
––– 4800 –––
––– 100 –––
––– 220 –––
Coss eff.
Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy
Typ.
–––
–––
–––
Max.
410
23
Units
mJ
IAR
Avalanche Current
A
EAR
Repetitive Avalanche Energy
37
mJ
Thermal Resistance
Symbol
Parameter
Junction-to-Case
Typ.
–––
Max.
0.34
–––
40
Units
RθJC
RθCS
RθJA
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.24
–––
°C/W
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. (See Fig. 11)
ꢀCoss eff. is a fixed capacitance that gives the same charging time
Starting TJ = 25°C, L = 1.5mH, RG = 25Ω,
as Coss while VDS is rising from 0 to 80% VDSS
IAS = 23A, dv/dt = 14V/ns (See Figure 12a)
ISD ≤ 23A, di/dt ≤ 430A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
2
www.irf.com
IRFP23N50L
100
10
1
100
10
VGS
15V
10V
VGS
15V
10V
TOP
TOP
8.0V
8.0V
7.0V
6.0V
5.5V
5.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
1
0.1
4.5V
4.5V
0.01
0.001
20µs PULSE WIDTH
Tj = 25°C
20µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.0
1000.00
23A
=
I
D
2.5
2.0
1.5
1.0
0.5
0.0
T
= 25°C
J
100.00
10.00
1.00
T = 150°C
J
V
= 15V
DS
20µs PULSE WIDTH
V
= 10V
GS
-60 -40 -20
0
20
40
60
80 100 120 140 160
1.0
6.0
11.0
16.0
°
T , Junction Temperature
( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
www.irf.com
3
IRFP23N50L
100000
12
10
7
D
I
=
23
V
= 0V,
f = 1 MHZ
GS
C
= C + C
,
C
SHORTED
V
V
V
=
=
=
400V
250V
100V
iss
gs
gd
ds
DS
DS
DS
C
= C
rss
gd
C
= C + C
oss
ds
gd
10000
1000
100
Ciss
5
Coss
Crss
2
10
0
0
24
Q
48
72
96
120
1
10
100
1000
, Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
100.00
10.00
1.00
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T
= 150°C
J
10us
100us
1ms
T
= 25°C
J
°
T = 25 C
C
10ms
V
= 0V
°
T = 150 C
Single Pulse
GS
J
0.10
1
10
100
1000
10000
0.0
0.5
1.0
1.5
2.0
V
, Drain-to-Source Voltage (V)
DS
V
, Source-toDrain Voltage (V)
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
www.irf.com
IRFP23N50L
RD
25
20
15
10
5
VDS
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
25
50
T
75
100
125
150
°
( C)
, Case Temperature
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.1
0.10
0.05
P
DM
t
0.02
0.01
1
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.001
t
2
Notes:
1. Duty factor D =
t / t
1
2
2. Peak T
= P
x Z
+ T
J
DM
thJC
C
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRFP23N50L
750
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
I
D
TOP
10A
15A
23A
600
450
300
150
0
BOTTOM
I
= 250µA
D
-75 -50 -25
0
25
50
75 100 125 150
25
50
75
100
125
150
°
( C)
T , Temperature ( °C )
Starting T , Junction Temperature
J
J
Fig 12a. Maximum Avalanche Energy
Fig 14. Threshold Voltage Vs. Temperature
Vs. Drain Current
1 5V
V
(BR)DSS
t
p
DRIVER
L
V
G
DS
D.U.T
AS
R
+
-
V
D D
I
A
20V
0.01
t
Ω
p
I
AS
Fig 12d. Unclamped Inductive Waveforms
Fig 12c. Unclamped Inductive Test Circuit
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.2µF
12V
VGS
V
.3µF
Q
Q
GD
GS
+
V
DS
D.U.T.
-
V
V
GS
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Basic Gate Charge Waveform
Fig 13a. Gate Charge Test Circuit
6
www.irf.com
IRFP23N50L
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
www.irf.com
7
IRFP23N50L
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
-
D -
3.65 (.143)
3.55 (.140)
5.30 (.209)
4.70 (.185)
15.90 (.626)
15.30 (.602)
0.25 (.010)
D
M
B M
2.50 (.089)
1.50 (.059)
- B
-
- A
-
5.50 (.217)
4
20.30 (.800)
19.70 (.775)
NOTES:
5.50 (.217)
4.50 (.177)
2X
1
DIMENSIONING & TOLERANCING
PER ANSI Y14.5M, 1982.
1
2
3
2
3
CONTROLLING DIMENSION : INCH.
CONFORMS TO JEDEC OUTLINE
TO-247-AC.
- C
-
14.80 (.583)
14.20 (.559)
4.30 (.170)
3.70 (.145)
LEAD ASSIGNMENTS
2.40 (.094)
2.00 (.079)
2X
0.80 (.031)
0.40 (.016)
1.40 (.056)
1.00 (.039)
3X
1 - GATE
3X
2 - DRAIN
3 - SOURCE
4 - DRAIN
2.60 (.102)
2.20 (.087)
0.25 (.010)
C
A
S
M
5.45 (.215)
2X
3.40 (.133)
3.00 (.118)
TO-247AC Part Marking Information
EXAMPLE: THIS IS AN IRFPE30
WIT H AS S E MB L Y
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE 5657
IRFPE30
035H
57
ASSEMBLED ON WW 35, 2000
IN THE ASSEMBLYLINE "H"
56
DATE CODE
YEAR 0 = 2000
WE E K 35
ASSEMBLY
LOT CODE
LINE H
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/01
8
www.irf.com
相关型号：
IRFP23N50LPBF
HEXFET Power MOSFET ( VDSS = 500V , RDS(on)typ. = 0.190ヘ , Trr typ. = 170ns , ID = 23A )
INFINEON
©2020 ICPDF网 联系我们和版权申明